IRC 265
Abstract: DP63950 DP83950BVQB DP83950BVQB-MPC MNDP83950B-VQB T101 T102 T103 T104 T105
Text: MICROCIRCUIT DATA SHEET Original Creation Date: 10/24/94 Last Update Date: 02/24/99 Last Major Revision Date: 10/24/94 MNDP83950B-VQB REV 0B0 REPEATER INTERFACE CONTROLLER General Description The "RIC" may be used to implement an IEEE 802.3 multiport repeater unit including the
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MNDP83950B-VQB
VUL160ARB
28x28x3
160LD
M0003282
MNDP83950B-VQB,
IRC 265
DP63950
DP83950BVQB
DP83950BVQB-MPC
T101
T102
T103
T104
T105
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Untitled
Abstract: No abstract text available
Text: DLI 2.5 LD PNP DLI 2.5 LD NPN DLA 2.5 DLA 2.5D DLD 2.5 PE Multiple Level Sensor Multiple Level Sensor Multiple Level Sensor & Ground Multiple Level Sensor & Ground Dual Level & Ground 1595950000 1565970000 1578550000 1578560000 1578530000 1578540000 1578570000
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wiring VDG 13 relay
Abstract: Battery Managements wiring VDG 14 relay CI 3060 elsys 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
Text: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738
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MC33121/D
MC33121
MC33121
refere20
MC33121/D*
wiring VDG 13 relay
Battery Managements
wiring VDG 14 relay
CI 3060 elsys
1N4002
1N6282
1N6287
MC33121FN
MC33121P
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wiring VDG 13 relay
Abstract: MC33120 TIP 22 transistor MC33120P Battery Managements 20k301 darlington circuit tip 42 HB205 1N6290A MC33120FN
Text: Order this data sheet by MC33120/D MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC The MC33120 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber line. Interface
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MC33120/D
MC33120
MC33120
wiring VDG 13 relay
TIP 22 transistor
MC33120P
Battery Managements
20k301
darlington circuit tip 42
HB205
1N6290A
MC33120FN
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wiring VDG 13 relay
Abstract: Battery Managements long range gold detector circuit diagram PIN CONFIGURATION IC RT 3060 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
Text: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738
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MC33121/D
MC33121
MC33121
refere12
wiring VDG 13 relay
Battery Managements
long range gold detector circuit diagram
PIN CONFIGURATION IC RT 3060
1N4002
1N6282
1N6287
MC33121FN
MC33121P
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vqb 201
Abstract: VQB201 VQB 28 E vqb 27 vqb 200 FUNKAMATEUR-Bauelementeinformation VQB200 Funkamateur ma702 vqb 200 d
Text: FUNKAMATEUR-Bauelementeinformation VQB 200 VQB 201 Einstellige Lichtschachtbauelemente grünstrahlend, Zeichenhöhe 12,7 mm, 16 Segmente und Dezimalpunkt, mit Diodenchips auf GaP-Basis Hersteller: VEB Werk für Fernsehelektronik Berlin TGL 42170 Kurzcharakteristik
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2n4125 transistor
Abstract: 2N4125
Text: TOSHIBA 2N4125 Transistor Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - Iqbo ~ -50nA Max. @ Vqb _ -20V - l(£go ~ -50nA (Max.) @ V^g = -3V • Low Saturation Voltage - VCE(sat) = -0.4V (Max.) @ lc = -50mA, lB = -5mA
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2N4125
-50nA
-50mA,
2N4123
2n4125 transistor
2N4125
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cb 10 b 60 kd
Abstract: 2N4126
Text: TOSHIBA 2N4126 Transistor Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - Iqbo -50nA Max. @ Vqb _ -20V - I^bo = -50nA (Max.) @ V^g = -3V • Low Saturation Voltage - VQE(satj = -0.4V (Max.) @ lc = -50mA, lB = -5mA
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2N4126
-50nA
-50mA,
2N4124
cb 10 b 60 kd
2N4126
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VQB 28 E
Abstract: vqb 27 VQB28 Siebensegmentanzeige VQb 28 VQB 18 VQB16 vqb 27 f VQB27 VQB18
Text: FUNKAMATEUR-Bauelementeinformation Einstellige Lichtschachtbauelemente rot- bzw. grünstrahlend, Ziffernhöhe 19,6 mm, mit Diodenchips auf GaA/As- bzw. GaP-Basis VQB16/17/18 VQB 26/27/28 T G L 55111 Hersteller: V E B W erk für Fernsehelektronik Berlin Kurzcharakteristik
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VQB16/17/18
VQB 28 E
vqb 27
VQB28
Siebensegmentanzeige
VQb 28
VQB 18
VQB16
vqb 27 f
VQB27
VQB18
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2n5551 transistor
Abstract: No abstract text available
Text: TOSHIBA 2N5551 Transistor Unit in mm Silicon NPN Epitaxial Type For General Purpose Switching and Amplifier Applications 0 45 Features • High Collector Breakdown Voltage jtT 0.35MAX. IB 0 45 I " Vcbo = 180V, VCE0 = 160V • Low Leakage Current I - Iqbo ~ 50nA Max. @ Vqb = 120V
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2N5551
35MAX.
2n5551 transistor
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NPN MATCHED PAIRS
Abstract: NPN pnp MATCHED PAIRS 5121 M DI4044 DI-2060
Text: HIGH GAIN - SMALL SIGNAL - NPN - MATCHED PAIRS mV Max. •>FEl/l<FE2 Diff. @ lc“ 10 /iA I e“ 0 V ebo Volts Min. @ I e*“ 1 0 / xA lc=0 @ 60 7 Dl 4100 4879 5.0 0.85 to 1.0 55 55 7 By Dl 4045 4880 5.0 0.8 to 1.0 45 45 7 0.1 @ Vqb = 30 Its Dl 4045-1 10.0
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DI-2060
100/xA
Ie-10/xA
100pA
Ie-10/Ã
500mA
NPN MATCHED PAIRS
NPN pnp MATCHED PAIRS
5121 M
DI4044
DI-2060
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Untitled
Abstract: No abstract text available
Text: fai' • »E I 83t8L05 000 153 1 q I SOLITRON DEVICES INC : S D F W O , S D F R 3 .I Ij S D R Ä I Ä S D R a ß ^ S D F S a iH ,5 'D R a iS " N-CHANNÊL ENHANCEMENT-MODE D-MOS FET SWITCHES FEATURES APPLICATIONS ■ High Input to Output isolation— 120dB typical
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83t8L05
120dB
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VQB 24 E
Abstract: VQB 28 E VQb 28 0485400000 vqb 15
Text: D LI 2 .5 LD P N P D L I 2 .5 LD N P N D L A 2 .5 D LA 2 .5 D D L D 2 .5 PE j ß o-#o 0 — 4, o-H ZH Multiple Level Sensor C_> o— •—o k" o -*Q — ' °¿ r° T_r Multiple Level Sensor -,_ r C -j Multiple Level Sensor & Ground C_J T_r Multiple Level Sensor
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diode 1n4007
Abstract: VQB 28 E vqb 15 0485400000 Diode -1N4007 diode,1N4007 diode 1N4007 terminal Diode 1N4007 vh
Text: Feed Through Terminals DLD 2.5 DLI 2.5 Triple Level M ultiple Level Sensor The DLI and DLD terminal blocks are particularly w ell-suited for use with three-wire proximity sensors. A typical application would use a single DLD feed through block to bring pow er to the
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Wh6900000
diode 1n4007
VQB 28 E
vqb 15
0485400000
Diode -1N4007
diode,1N4007
diode 1N4007 terminal
Diode 1N4007 vh
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diode 1n4007
Abstract: diode,1N4007 diode 1N4007 terminal Diode -1N4007 DLD 2.5 Diode Marking 1N4007 1317660000 of 1n4007
Text: Feed Through Terminals DLD 2.5 DLI 2.5 Triple Level M ultiple Level Sensor The DLI and DLD terminal blocks are particularly well-suited for use with three-wire proximity sensors. A typical application would use a single DLD feed through block to bring power to the
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CT1012
Abstract: Sd80-02 TIC 107
Text: SD5000, SD5001, SD5002 Universal Semiconductor N -C hannel E nhancem ent Mode Quad D-Mos F E T A nalog S w itch A rra y s O rdering Inform ation Description 20V , 500 10V, 500 15V, 50 0 16-Pin Plastic DIP 16-Pin Cerdip Gold-Backed Chips in Waffle Pack SD5000N
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SD5000,
SD5001,
SD5002
16-Pin
SD5000N
SD5000J
SD5000CHP
SD5001N
SD5001J
CT1012
Sd80-02
TIC 107
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Untitled
Abstract: No abstract text available
Text: WTELEDYNE COMPONENTS SD211A SD215A N-CHANNEL ENHANCEMENT-MODE DMOS FET SWITCHES FEATURES ABSOLUTE MAXIMUM RATINGS • ■ ■ ■ ■ Parameter V ds V sd Vdb Vsb V gs High Input to Output Isolation— 120dB typical Low feedthrough and feedback transients Low inter-electrode Capacitances
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SD211A
SD215A
120dB
SD215A
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diode AE 84A
Abstract: BOW84C TRANSISTOR Bdw84d BDW 65 C BOW84
Text: BDW84, BDW84A, BDW84B, BOW84C, BDW84D PNP SILICON POWER DARLINGTONS Copyright 1987, Power Innovations Limited, UK • A U G U ST 1978 • R E V IS E D M A R C H 1997 Designed for Complementary Use with BDW83, BDW83A, BDW83B, BDW83C and BDW83D • 150 W at 25°C Case Temperature
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BDW84,
BDW84A,
BDW84B,
BOW84C,
BDW84D
BDW83,
BDW83A,
BDW83B,
BDW83C
BDW83D
diode AE 84A
BOW84C
TRANSISTOR Bdw84d
BDW 65 C
BOW84
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bvoe
Abstract: TSC* 7 VQB 28 E
Text: TELEDYNE COMPONENTS 3bE D ITSC 3^171,02 QGG7Ô14 7 WTELEDYNE COMPONENTS SD5400 SD5401 SD5402 QUAD DMOS FET ANALOG SWITCH ARRAYS FEATURES APPLICATIONS • ■ ■ ■ ■ ■ Low Interelectrode Capacitances — Analog Input.3.5 pF Typ
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SD5400
SD5401
SD5402
107dB@
SD5400.
SD5401
4-250C
bvoe
TSC* 7
VQB 28 E
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Untitled
Abstract: No abstract text available
Text: SIEMENS SMBTA 42 NPN Silicon Transistor for High Voltages • High breakdown voltage • Low collector-em itter saturation voltage • C om plem entary types: SM BTA 92 PNP Type Marking Ordering Code Pin Configuration SM BTA 42 s1D Q 68000-A6482 1 =B 2=E
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68000-A6482
OT-23
Jan-22-1999
P00839
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G119BL
Abstract: No abstract text available
Text: V I I -j Q I «7 f r Siliconix incorporated Monolithic 6-Channel Enhancement-type MOSFET Switch FEATURES BENEFITS APPLICATIONS • • • Differential Input Analog Signal Switching • Multiplexing • Designed to Operate with D125, D129 and D139 Integrated MOSFET for
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LL250
Abstract: No abstract text available
Text: Feed Through Terminals VLI 1.5 V LI 1.5 PE M A K 2 .5 jm t W r ip s Ä 0 — — —0 o -o — °~^r -O Multiple Level Sensor Multiple Level Sensor & Ground Triple Level & Ground Terminal Block Selection Data Available Options Dimensions
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0520000000End
LL250
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Untitled
Abstract: No abstract text available
Text: SIEMENS PZTA 92 PNP Silicon High Voltage Transistor • High breakdown voltage • Low collector-em itter saturation voltage • C om plem entary type: PZTA 42 NPN Type Marking Ordering Code PZTA 92 PZTA 92 Q 62702-Z2037 Pin Configuration 1 =B 2=C Package
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62702-Z2037
OT-223
Jan-22-1999
100MHz
EHP00734
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Untitled
Abstract: No abstract text available
Text: SIEMENS PZTA 42 NPN Silicon High Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: PZTA 92 PNP Type Marking Ordering Code Pin Configuration PZTA 42 PZTA 42 Q62702-Z2035 1=B 2=C Package 3=E
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Q62702-Z2035
OT-223
Jan-21-1999
100MHz
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