BCR162
Abstract: No abstract text available
Text: BCR162 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR162 WUs Pin Configuration 1=B 2=E Package 3=C SOT23
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BCR162
VPS05161
EHA07183
Nov-29-2001
BCR162
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BFN16
Abstract: BFN17 BFN18 BFN19
Text: BFN16, BFN18 NPN Silicon High-Voltage Transistors 1 Suitable for video output stages in TV sets and 2 switching power supplies 3 High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN17, BFN19 PNP 2 VPS05162 Type
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BFN16,
BFN18
BFN17,
BFN19
VPS05162
BFN16
Aug-29-2001
BFN16
BFN17
BFN18
BFN19
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BCR583
Abstract: No abstract text available
Text: BCR583 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR583 XMs Pin Configuration 1=B 2=E Package 3=C SOT23
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BCR583
VPS05161
EHA07183
Dec-13-2001
BCR583
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BCR569
Abstract: No abstract text available
Text: BCR569 PNP Silizium Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1 = 4.7k 2 C 3 1 R1 1 2 B E VPS05161 EHA07180 Type Marking BCR569 XLs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings
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BCR569
VPS05161
EHA07180
Dec-13-2001
BCR569
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BCR183
Abstract: No abstract text available
Text: BCR183 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR183 WMs Pin Configuration 1=B 2=E Package 3=C SOT23
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BCR183
VPS05161
EHA07183
Dec-13-2001
BCR183
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BFG194
Abstract: VPS05163
Text: BFG 194 PNP Silicon RF Transistor For low distortion broadband amplifiers in 4 antenna and telecommunication systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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VPS05163
BFG194
OT-223
Oct-27-1999
BFG194
VPS05163
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BCP29
Abstract: BCP49 VPS05163
Text: BCP29, BCP49 NPN Silicon Darlington Transistors For general AF applications 4 High collector current High current gain Complementary types: BCP28/48 PNP 3 2 C(2,4) 1 B(1) VPS05163 E(3) EHA00009 Type Marking Pin Configuration Package BCP29 BCP 29
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BCP29,
BCP49
BCP28/48
VPS05163
EHA00009
BCP29
OT223
BCP29
BCP49
VPS05163
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BCR553
Abstract: No abstract text available
Text: BCR553 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=2.2k, R2=2.2k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR553 XBs Pin Configuration 1=B 2=E Package 3=C SOT23
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BCR553
VPS05161
EHA07183
Jul-23-2001
BCR553
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BCR521
Abstract: No abstract text available
Text: BCR521 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=1k, R2=1k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR521 XVs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings
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BCR521
VPS05161
EHA07184
Jun-29-2001
BCR521
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bat18 a2
Abstract: top marking c2 sot23 BAT18 BAT18-05 A2 SOT23 AUS SOT23 c2 sot23 BAT18-04 top marking 3c sot23 BAT18-04 sot23
Text: BAT18.BAT18-05 Silicon RF Switching Diode 3 Low-loss VHF / UHF switch above 10 MHz PIN diode with low forward resistance 2 1 BAT18 BAT18-05 BAT18-04 3 3 1 3 1 2 1 2 EHA07005 EHA07002 VPS05161 EHA07004 Type Marking Pin Configuration Package BAT18 A2s
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BAT18.
BAT18-05
BAT18
BAT18-04
EHA07005
EHA07002
VPS05161
EHA07004
bat18 a2
top marking c2 sot23
BAT18
BAT18-05
A2 SOT23
AUS SOT23
c2 sot23
BAT18-04
top marking 3c sot23
BAT18-04 sot23
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BCR569
Abstract: No abstract text available
Text: BCR569 PNP Silizium Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1 = 4.7k 2 C 3 1 VPS05161 R1 1 2 B E EHA07180 Type Marking BCR569 XLs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings
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BCR569
VPS05161
EHA07180
Jul-23-2001
BCR569
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BCR133
Abstract: No abstract text available
Text: BCR133 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR133 WCs Pin Configuration 1=B 2=E Package 3=C SOT23
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BCR133
VPS05161
EHA07184
Jul-13-2001
BCR133
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VPS05163
Abstract: BAT70-05
Text: BAT70-05 Silicon Schottky Diode 4 Parallel connection for maximum I F per package 3 Low forward voltage drop 2 For power supply 1 For clamping and protection VPS05163 2, 4 1 3 EHA00005 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BAT70-05
VPS05163
EHA00005
OT223
50/60Hz,
Jun-22-2001
100ms,
VPS05163
BAT70-05
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BCR198
Abstract: No abstract text available
Text: BCR198 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=47k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR198 WRs Pin Configuration 1=B 2=E Package 3=C SOT23
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BCR198
VPS05161
EHA07183
Jul-20-2001
BCR198
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a6s marking
Abstract: A6s sot23 transistor A6S BAS16 bas16ta
Text: BAS16 3 Silicon Switching Diode For high-speed switching applications 2 1 1 VPS05161 3 EHA07002 Type BAS16 Marking A6s Pin Configuration 1=A 2 n.c. 3=C Package SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage- VRM 85
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BAS16
VPS05161
EHA07002
EHB00023
Aug-29-2001
EHB00024
a6s marking
A6s sot23
transistor A6S
BAS16
bas16ta
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BCR146
Abstract: No abstract text available
Text: BCR146 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=47k, R2=22k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR146 WLs Pin Configuration 1=B 2=E Package 3=C SOT23
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BCR146
VPS05161
EHA07184
Jul-13-2001
BCR146
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BCR153
Abstract: No abstract text available
Text: BCR153 PNP Silicon Digital Transistor Preliminary data 3 Switching circuit, inverter, interface circuit, driver circuit Built in resistor R 1=2.2k, R2=2.2k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR153 WBs Pin Configuration 1=B 2=E Package
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BCR153
VPS05161
EHA07183
Jul-09-2001
BCR153
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BSS119
Abstract: E6327 Q67000-S007 infineon bss119 ID013
Text: BSS119 Rev. 1.0 SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.17 A SOT23 3 Drain pin 3 Gate pin1 2 Source pin 2 1 VPS05161 Type Package Ordering Code
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BSS119
VPS05161
Q67000-S007
E6327:
BSS119
E6327
Q67000-S007
infineon bss119
ID013
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marking 93A
Abstract: BFR93A transistor marking R2s
Text: BFR 93A NPN Silicon RF Transistor 3 For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR 93A R2s Pin Configuration
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VPS05161
OT-23
900MHz
Oct-13-1999
marking 93A
BFR93A
transistor marking R2s
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s3s sot23
Abstract: BBY51
Text: BBY51 Silicon Tuning Diode 3 High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation For VCO's in mobile communications equipment 2 1 Type Marking BBY51 S3s Pin Configuration 1 = A1 2 = A2 VPS05161 Package 3 = C1/2 SOT23 Maximum Ratings
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BBY51
VPS05161
Aug-08-2001
EHD07128
s3s sot23
BBY51
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BAS16TA
Abstract: marking a6s BAS16 A6S SOT23
Text: BAS16 3 Silicon Switching Diode For high-speed switching applications 2 1 1 VPS05161 3 EHA07002 Type BAS16 Marking A6s Pin Configuration 1=A 2 n.c. 3=C Package SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR Peak reverse voltage- VRM Forward current
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BAS16
VPS05161
EHA07002
EHB00023
Mar-11-2002
EHB00024
BAS16TA
marking a6s
BAS16
A6S SOT23
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marking BCV
Abstract: bcv 49
Text: BCV 29, BCV 49 NPN Silicon Darlington Transistors 1 • For general AF applications 2 • High collector current 3 • High current gain • Complementary types: BCV 28, BCV 48 PNP 2 VPS05162 Type Marking Pin Configuration Package BCV 29 EF 1=B 2=C 3=E 4=C
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VPS05162
OT-89
EHP00322
EHP00323
EHP00324
EHP00325
Sep-30-1999
marking BCV
bcv 49
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Untitled
Abstract: No abstract text available
Text: BCR 119 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in resistor R 1=4.7k 2 C 3 1 VPS05161 R1 1 2 B E EHA07264 Type Marking BCR 119 WKs Pin Configuration 1=B 2=E Package 3=C SOT-23 Maximum Ratings
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VPS05161
EHA07264
OT-23
Oct-19-1999
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Untitled
Abstract: No abstract text available
Text: BAR 66 Silicon PIN Diode Array 3 Surge protection device Two PIN diodes, series configuration Designed for surge overvoltage clamping in antiparallel connection 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAR 66 PMs Pin Configuration 1 = A1 2 = C2 Package
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VPS05161
EHA07005
OT-23
Feb-03-2000
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