Untitled
Abstract: No abstract text available
Text: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2 W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This
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SZM-3066Z
SZM-3066Z
DS131017
SZM3066ZSR
SZM3066Z
SZM3066ZPCK-EVB1
SZM3066ZSQ
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Untitled
Abstract: No abstract text available
Text: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER RoHS Compliant and Pb-Free Product Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This
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SZM-3066Z
SZM-3066Z
EDS-104608
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vpc3-c
Abstract: vpc3 c SZM-3066Z c2a marking recommended land pattern for 0402 cap
Text: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This
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SZM-3066Z
SZM-3066Z
EDS-104608
vpc3-c
vpc3 c
c2a marking
recommended land pattern for 0402 cap
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VPC3 C
Abstract: vpc3
Text: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This
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SZM-3066Z
SZM-3066Z
DS110620
SZM3066ZSQ
SZM3066ZSR
SZM3066ZPCK-EVB1
VPC3 C
vpc3
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vpc3 c
Abstract: vpc3-c MCH182C SZM-3066Z vpc3 s
Text: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2 W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This
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SZM-3066Z
SZM-3066Z
o3066Z
SZM3066Z
SZM3166ZPCK-EVB1
DS100622
vpc3 c
vpc3-c
MCH182C
vpc3 s
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vpc3
Abstract: No abstract text available
Text: Preliminary Product Description Sirenza Microdevices’ SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs
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SZM-3066Z
EDS-104608
SZM-3066Z"
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vpc3 c
Abstract: RF transistor gain 20dB vpc3
Text: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This
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SZM-3066Z
SZM-3066Z
ItDS110620
DS110620
SZM3066ZSQ
SZM3066ZSR
SZM3066Z
vpc3 c
RF transistor gain 20dB
vpc3
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vpc3 s
Abstract: SZA-5044Z vpc3 c 5044z 10358 OFDM SZA5044 SZA-5044 54Mb SIRENZA SZA-5044Z
Text: SZA-5044 SZA-5044Z Product Description Sirenza Microdevices’ SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and
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SZA-5044
SZA-5044Z
SZA-5044
EDS-103585
SZA-5044"
SZA-5044Z"
vpc3 s
SZA-5044Z
vpc3 c
5044z
10358
OFDM
SZA5044
54Mb
SIRENZA SZA-5044Z
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SZA-5044 APPLICATION NOTE
Abstract: SZA-5044 recommended land pattern for 0402 cap EDS-103585 10358 SZA-5044Z
Text: SZA-5044 Z SZA-5044(Z) 4.9GHz to 5.9GHz 5V Power Amplifier 4.9GHz to 5.9GHz 5V POWER AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor
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SZA-5044"
SZA-5044Z"
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recommended land pattern for 0402 cap
10358
SZA-5044Z
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STA-6033Z
Abstract: LX5506 STA-6033 transistor on 4959 vpc3 c 47K100
Text: STA-6033 STA-6033Z Product Description Sirenza Microdevices’ STA-6033 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated
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STA-6033Z
STA-6033
STA-6033Z
STA6033
EDS-103643
LX5506
transistor on 4959
vpc3 c
47K100
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vpc3 s
Abstract: transistor on 4959 OFDM VPC3 C ofdm circuitry SZA5044 SZA-5044 SZA-5044Z sza5044z ON 4959
Text: SZA-5044 SZA-5044Z Product Description Sirenza Microdevices’ SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and
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SZA-5044"
SZA-5044Z"
vpc3 s
transistor on 4959
OFDM
VPC3 C
ofdm circuitry
SZA5044
SZA-5044Z
sza5044z
ON 4959
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transistor on 4959
Abstract: No abstract text available
Text: Preliminary Product Description Sirenza Microdevices’ STA-6033 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.
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EDS-103643
STA-6033"
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Power AMP P1dB 35dBm
Abstract: No abstract text available
Text: ADVANCED INFORMATION Product Description Sirenza Microdevices’ SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs
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SZM-3166Z
EDS-105462
SZM-3166Z"
Power AMP P1dB 35dBm
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description Sirenza Microdevices’ STA-6033 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.
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AN-064
Abstract: STA-6033 LX5506 vpc3 b
Text: Preliminary Product Description Sirenza Microdevices’ STA-6033 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.
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STA-6033
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EDS-103643
AN-064
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description Sirenza Microdevices’ SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs
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vpc3 s
Abstract: vpc3 c SZM-3066Z dk39
Text: Preliminary Product Description Sirenza Microdevices’ SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs
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SZM-3066Z"
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description Sirenza Microdevices’ SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.
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SZA-5044
Abstract: ON 4959
Text: SZA-5044 SZA-5044Z Product Description Sirenza Microdevices’ SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and
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SZA5044
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VPC3 C
Abstract: RFSP5021 ofdm amplifier
Text: Advanced RFSP5021 5.15-5.85 GHz U-NII Power Amplifier Product Description Applications The RFSP5021 power amplifier is a highperformance GaAs HBT IC designed for use in transmit applications in the 5.15-5.85 GHz frequency band. With a P1dB of 25 dBm, the device is ideal as a final stage for wireless LAN
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DRFS-P5021-DSH
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ofdm amplifier
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vpc3 b
Abstract: ofdm amplifier vpc3 c RFSP5022
Text: Advanced RFSP5022 5.15-5.85 GHz U-NII Power Amplifier Product Description Applications • • • The RFSP5022 power amplifier is a highperformance GaAs HBT IC designed for use in transmit applications in the 5.15-5.85 GHz frequency band. With a P1dB of 25 dBm, the
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ofdm amplifier
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vpc3 c
Abstract: ofdm amplifier OFDM RFSP5034
Text: Advanced RFSP5034 5.15-5.85 GHz U-NII Power Amplifier Product Description Applications The RFSP5034 power amplifier is a highperformance GaAs HBT IC designed for use in transmit applications in the 5.15-5.85 GHz frequency band. With a P1dB of 26.5 dBm, the
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RFSP5034
DRFS-P5034-DSH
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ofdm amplifier
OFDM
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3.5GHz BJT
Abstract: cpe wimax
Text: SZM-3166Z SZM-3166Z 3.3GHz to 3.6GHz 2W Power Amplifier 3.3GHz to 3.6GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT
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SZM-3166Z"
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SZM3166ZSQ
SZM3166ZSR
SZM3166Z
SZM3166ZPCK-EVB1
3.5GHz BJT
cpe wimax
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description Sirenza Microdevices’ STA-6033 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.
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