SDH siemens
Abstract: 2N3904 PNP stm siemens S1202 S3037 V23806-A84-C2 V23826-H18-C63 transistor K 603 603 transistor
Text: S3037 WITH 1 X 9 SIEMENS FIBER OPTICS APPLICATION NOTE S3037 WITH 1 X 9 SIEMENS FIBER OPTICS APPLICATION NOTE S3037 INTRODUCTION The AMCC S3037 SONET/SDH transceiver and clock recovery chip is a fully integrated serialization/ deserialization SONET STS-12/STM-4 622.08 Mbps and STS-3/STM-1 (155.52 Mbps) interface device. This
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S3037
S3037
STS-12/STM-4
STS-12/STM-4
SDH siemens
2N3904 PNP
stm siemens
S1202
V23806-A84-C2
V23826-H18-C63
transistor K 603
603 transistor
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STANDARD PIN DETAILS OF 2N3904 NPN TRANSISTOR
Abstract: SDH siemens stm siemens S1201 S1202 S3019 V23806-A84-C2 V23826-H18-C63 transistor 2N3904
Text: Part Number S3019 February 10, 2000 / Revision 1.0 S3019 with 1 x 9 Siemens Fiber Optics and S1202 NILE/S1201 CONGO APPLICATION NOTE Introduction The AMCC S3019 SONET/SDH transceiver and clock recovery chip is a fully integrated serialization/deserialization SONET STS-12/STM-4 622.08 Mbps and STS-3/STM-1 (155.52 Mbps) interface device. This device is
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S3019
S3019
S1202
NILE/S1201
STS-12/STM-4
STS-12/STM-4
STANDARD PIN DETAILS OF 2N3904 NPN TRANSISTOR
SDH siemens
stm siemens
S1201
V23806-A84-C2
V23826-H18-C63
transistor 2N3904
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SIEMENS THYRISTOR
Abstract: TEMPFET SIEMENS THYRISTOR thy pwm thyristor thyristor control ic with current sense Discrete Thyristor Chip siemens thy mosfet controlled thyristor SIEMENS FAST THYRISTOR 6 thyristor driver circuit
Text: Speed TEMPFET HL Application Note Temperature sense concept – Speed Tempfet® Principle of the temperature sense concept of the Speed-TEMPFET family Benno Köppl Introduction The well-known classic TEMPFET products from Siemens are a cost-effective solution for
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Untitled
Abstract: No abstract text available
Text: SIEMENS 2.1 Magneto Resistors Fundamentals Magneto resistors are magnetically influenced resistors of InSb/NiSb material which work according to the Gauss effect. The charge carriers which flow through the semiconductor material experience a sideways action in a traverse magnetic field by
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KPY 43-R
Abstract: No abstract text available
Text: Technische Grundlagen Technical Basics SIEMENS 1 Technische Grundlagen 1 Technical Basics Drucksensoren sind Meßumwandler, welche die physikalische Größe Druck in ein elek trisches Signal umwandeln. Ihr Kernstück ist eine Meßzelle, bestehend aus einem
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4951
Abstract: No abstract text available
Text: SIEMENS Current-Monitoring 1C TLE 4951 Preliminary Data Bipolar IC Features • • • • • • Input currents max 25 nA, protective resistors can be connected in series Effective protection against destruction by excessive voltages such as load dump pulses occuring in cars
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P-DIP-14-1
P-DSO-14-1
4951
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incremental encoders siemens
Abstract: AFL smd Marking AFL smd code gmr sensor Angle Sensor Magneto Resistors FL005 siemens gmr magnetic field sensor siemens AFL MARKING GMR B6 application
Text: SIEMENS Giant Magneto Resistive Position Sensor B6 Preliminary Data This angle sensor is based on the Giant Magneto Besistive GMR technology. It is outstanding for the huge tolerances it offers to the user in assembly. Features • GMR sensor in SMD package
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GPW06rcuit.
incremental encoders siemens
AFL smd Marking
AFL smd code
gmr sensor
Angle Sensor Magneto Resistors
FL005
siemens gmr
magnetic field sensor siemens
AFL MARKING
GMR B6 application
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incremental encoders siemens
Abstract: GMR sensor siemens gmr magnetic field sensor siemens
Text: SIEMENS Giant Magneto Resistive Position Sensor C6 Version 1.0 Preliminary Data This angle sensor is based on the Giant Magneto Resistive GMR technology. It is outstanding for the huge tolerances it offers to the user in assembly. Features • GMR sensor in SMD package
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Untitled
Abstract: No abstract text available
Text: SIEMENS Giant Magneto Resistive Position Sensor B6 Preliminary Data This angle sensor is based on the Giant Magneto Resistive GMR technology. It is outstanding for the huge tolerances it offers to the user in assembly. Features • G M R sensor in SMD package
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8 pin ic A 4506
Abstract: ic a 4506 PSB4506A 4506a-t A 4506 v Q67000-A6019 PSB4506 microphone preamplifier smd code Yj 33 PSB45030
Text: SIEMENS 2.1 Enhanced Speech Circuit ESC P S B 4506; A P S B 4506-T; A-T Bipolar IC Features • Active line impedance generation for minimal signal loss in transmitting mode (real or complex impedance generation) • Only one complex network is necessary to make
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4506-T;
8 pin ic A 4506
ic a 4506
PSB4506A
4506a-t
A 4506 v
Q67000-A6019
PSB4506
microphone preamplifier
smd code Yj 33
PSB45030
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Untitled
Abstract: No abstract text available
Text: SIEMENS Differential Magnetoresistive Sensor FP 201 L 100 Features • Extremely high output voltage • 2 independently biased magnetic circuits • Robust housing • Signal amplitude independent of operating speed • Screw mounting possible 0.55 0.45 a
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GPX06771
Q65210-L101
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P-DIP-20-1
Abstract: TDA 4718 B TDA 4716 C equivalent 20/TDA 4716 C siemens pdip 14
Text: bOE II • 8 5 3 S b0 5 0 0 5 0 00 1 110 « S I E 6 SIEMENS SIEMENS AKTIENCESELLSCHAF T - f c S Current-Monitoring IC - lS t i _E 4951 Preliminary Data Bipolar 1C Features • • • • • • Input currents max 25 nA, protective resistors can be connected in series
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P-DIP-14-1
P-DIP-20-1
TDA 4718 B
TDA 4716 C equivalent
20/TDA 4716 C
siemens pdip 14
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siemens hall ferrite
Abstract: No abstract text available
Text: SIEMENS Magnetics 1.1 Magnetic units and definitions 1.1.1 Magnetic flux <I> The magnetic flux <1> results as a product of electric voltage and time. The S.l. unit of magnetic flux is the Weber Wb or the Volt-second (Vs). If the magnetic flux <J>changes
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Untitled
Abstract: No abstract text available
Text: SIEMENS Non-Contact Magnetically Actuated Potentiometers An always reliable fully automatic exchange of information at the interface between mechanics and electronics is one of the fundamental requirements for successful automation in all fields. In many applications today, mechanical variables such as
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Differential Pressure siemens
Abstract: KPY 10
Text: Technologie der KPY-Familie Technology of the KPY-Family SIEMENS 2 Technologie 2 Technology 2.1 Scheibenherstellung 2.1 W afer Fabrication Die meisten Schritte zur Herstellung von Drucksensoren sind die Prozesse der Silizium-Planartechnologie. Zu diesen kommen
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Untitled
Abstract: No abstract text available
Text: S IE M E N S Universal LCD Driver MEB 0804 M OSIC Type Ordering Code Package Quantity per Order Pieces MEB 0804 Q67100-Y685 MIKROPACK*) 500-2500 Shipment of quantities will be on metal film spools (CMOS!)- These films spools are the property of Siemens and must be returned when empty.
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Q67100-Y685
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smd transistor 43B
Abstract: mdn 3bt hst 3bt 1 E3040 BTS410H smd zener diode code AST BTS412B BTS 132 SMD STT 3 SIEMENS 410D
Text: SIEMENS BTS410H PROFET • High-side switch • Short-circuit protection • Overtemperature protection • Overload protection • Load dump protection1 • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Reverse battery protection 1)
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BTS410H
T0220AB/5
30pAtyp,
10jis
30yAtyp
23SbOS
C67078-S5305-A17
E3040
smd transistor 43B
mdn 3bt
hst 3bt 1
E3040
BTS410H
smd zener diode code AST
BTS412B
BTS 132 SMD
STT 3 SIEMENS
410D
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smd transistor s71
Abstract: BTS410F e3040 410D C67078-S5305-A5 power transistor GPT051S6 s71 smd zener diode BTS41OF C67078-S5303-A21
Text: SIEMENS BTS410F PROFET • High-side switch • Short-circuit protection • Overtemperature protection • Overload protection • Load dump protection1 • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Reverse battery protection 1)
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T0220AB/5
235b05
0G547QÃ
C67078-S5305-A5
E3040
C67078-S5305-A9
E3043
C67078-S5305-A14
gpt05547
E3062
smd transistor s71
BTS410F
e3040
410D
C67078-S5305-A5
power transistor
GPT051S6
s71 smd zener diode
BTS41OF
C67078-S5303-A21
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g0547
Abstract: 410D 410E 410H BTS412B BTS412B circuit
Text: SIEMENS BTS 412B PRÜFET • • • • • High-side switch Short-circuit protection Overtemperature protection Overload protection Load dump protection1 • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Reverse battery protection ')
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T0220AB/5
30jiAtyp
fl235bG5
DDS4754
BTS412B
C67078-S5300-A9
E3040
C67078-S5300-A10
E3043
g0547
410D
410E
410H
BTS412B circuit
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PROFET BTS 410E
Abstract: BTS412B ScansUX7 410D 410E 410F 410H bts 412b
Text: SIEMENS BTS 412B PROFET • High-side switch • Short-circuit protection • Overtemperature protection • Overload protection • Load dump protection1 • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Reverse battery protection v
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T0220AB/5
BTS412B
C67078-S5300-A9
E3040
C67078-S5300-A10
E3043
C67078-S5300-A16
CPT05547
E3062
PROFET BTS 410E
ScansUX7
410D
410E
410F
410H
bts 412b
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Untitled
Abstract: No abstract text available
Text: SIEMENS BTS 412B PROFET • • • • • High-side switch Short-circuit protection Overtemperature protection Overload protection Load dump protection’ • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Reverse battery protection 1)
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T0220AB/5
BTS412B
E3043
C67078-S5300-A9
C67078-S5300-A16
E3040
E3062
C67078-S5300-A10
C67078-S5300-A15
E3062A
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BTS 302
Abstract: siemens LAL 2.25 BTS410G BTS302 ZENER A24 e3040 410H DIODE smd Wj 20/BTS 302
Text: SIEMENS BTS 41 OG PROFET • High-side switch • Short-circuit protection • Overtemperature protection • Overload protection • Load dump protection1 • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Reverse battery protection ’ /
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BTS410G
T0220AB/5
6235bOS
fl23Sfc
0GSH720
C67078-S5305-A6
E3040
BTS 302
siemens LAL 2.25
BTS410G
BTS302
ZENER A24
e3040
410H
DIODE smd Wj
20/BTS 302
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smd diode u1j
Abstract: BTS410E diode U1J ON semiconductor 935 738 U1J 412 U1J e3040 smd transistor GY 740 Diode SMD U1J 410D 410E
Text: SIEMENS BTS 410 E PROFET • High-side switch • Short-circuit protection • Overtemperature protection • Overload protection • Load dump protection1 • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Reverse battery protection
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BTS410E
O220AB/5
C67078-S5305-A4
E3040
C67078-S5305-A8
E3043
C67078-S5305-A12
GPT05S47
E3062
C67078-S5305-A28
smd diode u1j
BTS410E
diode U1J ON semiconductor 935
738 U1J
412 U1J
e3040
smd transistor GY 740
Diode SMD U1J
410D
410E
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4605-3
Abstract: No abstract text available
Text: SIEMENS Control IC for Switched-Mode Power Supplies using MOS-Transistor TDA 4605-3 Bipolar 1C Features • • • • • • • • • Fold-back characteristics provides overload protection for external components Burst operation under secondary short-circuit condition
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Q6700005-3
UED00496
4605-3
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