npn 60V 600mw
Abstract: NTE2672 voltage 15v,collector current 40mA VEBO-15V
Text: NTE2672 Silicon NPN Transistor High Gain, Low Frequency, General Purpose Amp TO92 Type Package Features: D High DC Current Gain: hFE = 800 to 3200 D Low Collector−Emitter Saturation Voltage: VCE sat = 0.5V Max D High Collector−Base Voltage: VEBO ≥ 15V
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NTE2672
100mA,
npn 60V 600mw
NTE2672
voltage 15v,collector current 40mA
VEBO-15V
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NTE2672
Abstract: VEBO-15V
Text: NTE2672 Silicon NPN Transistor High Gain, Low Frequency, General Purpose Amp Features: D High DC Current Gain: hFE = 800 to 3200 D Low Collector-Emitter Saturation Voltage: VCE sat = 0.5V Max D High Collector-Base Voltage: VEBO ≥ 15V Applications: D Low Frequency, General Purpose Amp
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NTE2672
100mA,
NTE2672
VEBO-15V
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE N series n Features • • • • n Outline Drawing Including Brake Chopper Square RBSOA Low Saturation Voltage Overcurrent Limiting Function ( 4 ~ 5 Times Rated Current ) n Equivalent Circuit n Absolute Maximum Ratings ( Tc=25°C) Items
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D-60528
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igbt 40A 600V
Abstract: CA75
Text: IGBT MODULE N series n Features • • • • n Outline Drawing Including Brake Chopper Square RBSOA Low Saturation Voltage Overcurrent Limiting Function ( 4 ~ 5 Times Rated Current ) n Equivalent Circuit n Absolute Maximum Ratings ( Tc=25°C) Items
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D-60528
igbt 40A 600V
CA75
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igbt 1200V 40A module
Abstract: No abstract text available
Text: IGBT MODULE N series n Features • • • • n Outline Drawing Including Brake Chopper Square RBSOA Low Saturation Voltage Overcurrent Limiting Function ( 4 ~ 5 Times Rated Current ) n Equivalent Circuit n Absolute Maximum Ratings ( Tc=25°C) Items
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D-60528
igbt 1200V 40A module
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SGL40N150
Abstract: No abstract text available
Text: IGBT SGL40N150 General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. SGL40N150 is designed for the Induction Heating applications. • High Speed Switching • Low Saturation Voltage : VCE(sat) = 3.7 V @ IC = 40A
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SGL40N150
SGL40N150
O-264
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SGH80N60UF
Abstract: No abstract text available
Text: IGBT SGH80N60UF Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching
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SGH80N60UF
SGH80N60UF
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smd diode code T7
Abstract: No abstract text available
Text: ITH08F06 ITH08F06 High Speed Powerline N-Channel IGBT DS4988-3.0 May 1999 The ITH08F06 is a very robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage applications such as power supplies and
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ITH08F06
DS4988-3
ITH08F06
smd diode code T7
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induction heater
Abstract: FGL40N150D induction heater for heating
Text: IGBT FGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. FGL40N150D is designed for the Induction Heating applications. • • • • High Speed Switching Low Saturation Voltage : VCE(sat) = 3.5 V @ IC = 40A
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FGL40N150D
FGL40N150D
O-264
induction heater
induction heater for heating
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SGL40N150
Abstract: igbt 40a 600v
Text: SGL40N150 General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The SGL40N150 is designed for induction heating applications. • High speed switching • Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A
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SGL40N150
SGL40N150
O-264
igbt 40a 600v
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fairchild Igbts
Abstract: SGH80N60UF
Text: SGH80N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is
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SGH80N60UF
fairchild Igbts
SGH80N60UF
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induction heater
Abstract: igbt 40A 600V SGL40N150D IGBT 600V 16
Text: IGBT SGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. SGL40N150D is designed for the Induction Heating applications. • • • • High Speed Switching Low Saturation Voltage : VCE(sat) = 3.7 V @ IC = 40A
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SGL40N150D
SGL40N150D
O-264
induction heater
igbt 40A 600V
IGBT 600V 16
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Untitled
Abstract: No abstract text available
Text: 2SD2672 Transistors Low frequency amplifier 2SD2672 External dimensions Unit : mm Application Low frequency amplifier Driver TSMT3 1.0MAX Features 1) A collector current is large. (4A) 2) VCE(sat) 250mV At IC = 2A / IB = 40mA 2.9 0.85 0.4 0.7 1.6 2.8 (3)
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2SD2672
250mV
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Untitled
Abstract: No abstract text available
Text: IGBT SGF80N60UF Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching
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SGF80N60UF
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SGH80N60UF
Abstract: SGH80N60
Text: SGH80N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is
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SGH80N60UF
SGH80N60UF
SGH80N60
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SGF80N60UF
Abstract: No abstract text available
Text: IGBT SGF80N60UF Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching
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SGF80N60UF
SGF80N60UF
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Untitled
Abstract: No abstract text available
Text: 2SD2672 Transistors Low frequency amplifier 2SD2672 zExternal dimensions Unit : mm zApplication Low frequency amplifier Driver TSMT3 1.0MAX zFeatures 1) A collector current is large. (4A) 2) VCE(sat) ≦ 250mV At IC = 2A / IB = 40mA 2.9 0.85 0.4 0.7 1.6
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2SD2672
250mV
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2SD2672
Abstract: No abstract text available
Text: 2SD2672 Transistors Low frequency amplifier 2SD2672 zExternal dimensions Unit : mm zApplication Low frequency amplifier Driver TSMT3 1.0MAX zFeatures 1) A collector current is large. (4A) 2) VCE(sat) ≦ 250mV At IC = 2A / IB = 40mA 2.9 0.85 0.4 0.7 1.6
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2SD2672
250mV
50ipment
2SD2672
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SGH80N60UFD
Abstract: No abstract text available
Text: IGBT SGH80N60UFD Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UFD series provides low conduction and switching losses. UFD seriesis designed for the applications such as motor control and general inverters where High Speed Switching
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SGH80N60UFD
SGH80N60UFD
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SGL40N150D
Abstract: No abstract text available
Text: SGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The SGL40N150D is designed for induction heating applications. • • • • High speed switching Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A
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SGL40N150D
SGL40N150D
O-264
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SGH80N60UFD
Abstract: No abstract text available
Text: SGH80N60UFD Ultrafast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is
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SGH80N60UFD
SGH80N60UFD
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SGH80N60UFD
Abstract: No abstract text available
Text: SGH80N60UFD Ultrafast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is
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SGH80N60UFD
SGH80N60UFD
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Untitled
Abstract: No abstract text available
Text: SGH80N60UFD Ultrafast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is
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SGH80N60UFD
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FGL40N150D
Abstract: No abstract text available
Text: FGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications. • • • • High speed switching Low saturation voltage : VCE(sat) = 3.5 V @ IC = 40A
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FGL40N150D
FGL40N150D
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