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    VMOS TRANSISTOR Search Results

    VMOS TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    VMOS TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BD512 mosfet

    Abstract: itt transistoren Relais ITT halbleiterwerk transistor 2N 3055 ITT Intermetall Leuchtdiode CQY 40 transistor BD 522 schaltregler BD512
    Text: VMOS Transistoren Eigenschaften und Schaltungsbeispiele 6240-09-2 D INTERMETALL Halbleiterwerk der Deutsche ITT Industries GmbH VMOS-Transistoren Eigenschaften und Schaltungsbeispiele Zusammengestellt von folgenden Mitarbeitern der ITT Semiconductors Gruppe


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    BS212

    Abstract: GG01 BS192
    Text: I T T CORP/ I T T CMPNTS 41E D B 4bfi2bñ4 GG01403 b H I T O 'T '- 'll- 'L 'S VMOS TRANSISTORS N-Channel VMOS Transistors Enhancement-Mode MOSFETs featuring high input impedance, high power gain, fast switching times, CMOS compatibility, no second breakdown,


    OCR Scan     		GG01403 BS107 BS108 BS112 BS170 BS189 BS212 GG01 BS192 PDF

    BS192

    Abstract: 10D3 BS170 v-mos din 41870 BS209
    Text: ARR4955 I T T SEMICONDUCTORS 07 DE I 4hû 4TSS 87 D 0 2 3 2 5 D 7-. VMOS TRANSISTORS 0GDE3SS 2 N-Channel VMOS Transistors Enhancement-Mode MOSFETs featuring high input impedance, high power gain, fast switching times, CMOS compatibility, no second breakdown,


    OCR Scan     		ARR4955 -TO-92) BS107 BS108 BS109 BS112 BS170 BS192 BS208 BS209 10D3 BS170 v-mos din 41870 PDF

    BS192

    Abstract: BS212 D 92 M - 03 DIODE D 92 M - 02 DIODE 10D3 2n3904, itt c 92 M - 02 DIODE bs189
    Text: I T T CORP/ I T T CMPNTS 31E D • 4böEböH ÜQQ1 3 Q 7 T ■ VMOS NPN AND PNP TRANSISTORS N-Channel VMOS Transistors Enhancement-Mode MOSFETsfeaturing high input impedance, high power gain, fast switching times, CMOS compatibility, no second breakdown, no thermal runaway.


    OCR Scan     		BS107 BS108 BS112 BS170 BS189 170rox. DO-41 DO-35 BS192 BS212 D 92 M - 03 DIODE D 92 M - 02 DIODE 10D3 2n3904, itt c 92 M - 02 DIODE PDF

    intel 7110

    Abstract: vmos fet intel 8085 INTEL 7254 vmos BPK70 DIODE S4 3a vmos to bubble memories 7254 coil driver
    Text: intei 7254 QUAD VMOS DRIVE TRANSISTORS FOR BUBBLE MEMORIES Designed to Drive X and Y Coils of 7110 Bubble Memories • Operates from V qd Only No Bias Currents Required ■ VMOS FET Technology Fast Turn-on and Turn-off — 30 ns Maximum ■ N-Channel and P-Channel Transistors


    OCR Scan     		14-Pin HP21SA intel 7110 vmos fet intel 8085 INTEL 7254 vmos BPK70 DIODE S4 3a vmos to bubble memories 7254 coil driver PDF

    Siliconix VMOS

    Abstract: vmos vmos fet Siliconix Application Note AN76-3 VN46AF mosfet vn66af VMOS Transistor CD4011 VN66AF
    Text: AN79-4 H Siliconix APPLICATION NOTE Driving VMOS Power FETs Dave Hoffm an January 1979 INTRODUCTION Using VMOS Pow er FETs you can achieve perform ance never before possible—if you drive them properly. This article describes circuits and suggests design m ethods to


    OCR Scan     		AN79-3. AN76-3. Siliconix VMOS vmos vmos fet Siliconix Application Note AN76-3 VN46AF mosfet vn66af VMOS Transistor CD4011 VN66AF PDF

    1461 transistor

    Abstract: 1461 TELEDYNE 1461
    Text: WTELEDYNE COMPONENTS 1461 OPERATIONAL AMPLIFIER — HIGH-SPEED, HIGH-POWER, VMOS-OUTPUT FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ The 1461 is an extremely fast, FET-input, VMOS-output, power operational amplifier. It operates from ±15V to +40V supplies, has output voltages up to ±34V, and output


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    TELEDYNE 1463

    Abstract: 4025 to-3 ti211 vmos VMOS Transistor teledyne 4027
    Text: TELEDYNE SaE D COMPONENTS M- a 'I^ b O S 0 0 ü ti211 s 1463 High Speed High Power VMOS Output Op Amp The 1463 is third in a series of high speed, FET input, VMOS output power op amps. It operates from ±15V to ±40V supplies and has a guaranteed output of ±28V at 1A with ±36V supplies.


    OCR Scan     		ti211 250ns TELEDYNE 1463 4025 to-3 vmos VMOS Transistor teledyne 4027 PDF

    TELEDYNE 1461

    Abstract: TELEDYNE+1461
    Text: TELEDYNE C O M PO N EN T S 3bE D • â^l?tOE DGG?fe.2b b « T S C * T * 7 0v- 0 ‘ 7 - \ C WTELEDYNE COMPONENTS 1461 OPERATIONAL AMPLIFIER — HIGH-SPEED, HIGH-POWER, VMOS-OUTPUT FEATURES GENERAL DESCRIPTION ■ ■ ■ ■ ■ ■ ■ The 1461 is an extremely fast, FET-input, VMOS-output, power operational amplifier. It operates from +15V to


    OCR Scan     		1461X1 01--Lf fiS17bOB DD07b3B TELEDYNE 1461 TELEDYNE+1461 PDF

    VMOS Transistor

    Abstract: BS170 v-mos AH47 BS170
    Text: BS170 Enhancement Mode N-Channel VMOS Transistor Features: High input impedance High speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown 4 CD •si' — •HA rr ♦ r^‘ i m ax.Q 5$ Plastic case « JEDEC TO-92


    OCR Scan     		BS170 100/xA, VMOS Transistor BS170 v-mos AH47 BS170 PDF

    transistor BD522

    Abstract: transistor BD 522 BD522 vmos bd522 vmos VMOS Transistor
    Text: BD522 Enhancement Mode N-Channel Power VMOS Transistor for applications needing high input impedance and fast switching times. TT un Features: High input impedance High speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway


    OCR Scan     		BD522 O-202 dB/50 transistor BD522 transistor BD 522 BD522 vmos bd522 vmos VMOS Transistor PDF

    VMOS Transistor

    Abstract: BS250
    Text: BS250 Enhancement Mode P-Channel VMOS Transistor Features: High input impedance High speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown m ax.Q 5# Plastic case ~ JEDEC TO-92 TO-18 compatible


    OCR Scan     		BS250 VMOS Transistor BS250 PDF

    intel 8085

    Abstract: intel 7110 Bubble Memory 8086 8086 8088 vmos vmos to 7230 7904 BPK70
    Text: inteT BPK70 1 MBIT BUBBLE STORAGE SUB-SYSTEM One 7250 Coil Pre-Driver Contains Components for Production of 1 MBit Bubble Storage Sub-System Two 7254 Quad VMOS Drive Transistors • One 7230 Current Pulse Generator One 7110 1 MBit Bubble Memory One 7242 Dual Formatter/Sense


    OCR Scan     		BPK70 2x7254 BPK70-0 BPK70-1 BPK70-2 intel 8085 intel 7110 Bubble Memory 8086 8086 8088 vmos vmos to 7230 7904 BPK70 PDF

    VN66AK

    Abstract: VMOS Transistor VN88AF Siliconix VMOS VN66AF equivalent VN46AF equivalent VN46AF VN98AK VMOS VN88AF SILICONIX
    Text: AN77-2 s Silico n ix APPLICATION NOTE Don’t Trade Off Analog Switch Specs. V M O S -A Solution to High Speed, High Current, Low Resistance Analog Switches Walt Heinzer INTRODUCTION F or analog switches, Vertical MOS VMOS transistors give you a nearly ideal com bination o f characteristics—w ithout


    OCR Scan     		VN66AK VN66AK. VMOS Transistor VN88AF Siliconix VMOS VN66AF equivalent VN46AF equivalent VN46AF VN98AK VMOS VN88AF SILICONIX PDF

    vmos fet

    Abstract: VMOS AUDIO AMPLIFIER vmos audio circuit MSK1461 MSK1461B
    Text: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 1461 HIGH SPEED/VOLTAGE OP AMP 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: Extremely Fast - 500v/µS Wide Supply Range ±15V to ±45V VMOS Output, No S.O.A. Restrictions


    Original     		MIL-PRF-38534 800mA MSK1461 MSK1461B Military-Mil-PRF-38534 vmos fet VMOS AUDIO AMPLIFIER vmos audio circuit MSK1461 MSK1461B PDF

    A19 SMD transistor

    Abstract: No abstract text available
    Text: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 1461 HIGH SPEED/VOLTAGE OP AMP 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: Extremely Fast - 500v/µS Wide Supply Range ±15V to ±45V VMOS Output, No Secondary Breakdown


    Original     		MIL-PRF-38534 500v/Â 800mA MSK1461 MSK1461E MSK1461B A19 SMD transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: KENNEDY H S M.S. KENNEDY CORP. CORP b3E D • S1343D0 D0002D2 HIGH SPEED/VOLTAGE OP AMP SS2 ■ MSK 1461 (315) 699-9201 8170 Thompson Road • Cicero, N.Y. 13039 FEATURES: • • • • • • Extremely Fast Wide Supply Range ±15V to ±45V VMOS Output, No S.O.A. Restrictions


    OCR Scan     		S1343D0 D0002D2 1461B Mil-H-38534 PDF

    sk1461

    Abstract: sk 100 transistor
    Text: M í f t H,GH SPoEpEampOLTAGE 1 4 6 1 M .S . K E N N E D Y C O R P 315 699-9201 8170 Thompson Road •Cicero, N.Y. 13039 FEATURES: Extremely Fast Wide Supply Range ±15V to ±45V VMOS Output, No S.O.A. Restrictions Large Galn-Bandwldth Product FET Input


    OCR Scan     		1461B MII-H-38534 sk1461 sk 100 transistor PDF

    TELEDYNE PHILBRICK

    Abstract: TELEDYNE PHILBRICK 15v, 50 mA power supply Philbrick T1460 TELEDYNE PHILBRICK 1460 teledyne 1460 teledyne video
    Text: TELEDYNE COMPONENTS 2ÖE D IH 0T17tiGH ÜQQbBüS T • 1460 High Power VMOS Output Operational Amplifier The 1460 heralds a new era in high power, wideband opera­ tional amplifiers. Originally designed for ATE signal amplifica­ tion and pin driving, the 1460 surpasses its competition in speed


    OCR Scan     		0T17tiGH 00V///sec 150mA 55MHz 50MHz 32MHz 17MHz 10MHz 25MHz TELEDYNE PHILBRICK TELEDYNE PHILBRICK 15v, 50 mA power supply Philbrick T1460 TELEDYNE PHILBRICK 1460 teledyne 1460 teledyne video PDF

    TELEDYNE PHILBRICK

    Abstract: No abstract text available
    Text: 1460 High Power VMOS Output Operational Amplifier The 1460 heralds a new era in high power, wideband opera­ tional amplifiers. Originally designed for ATE signal am plifica­ tion and pin driving, the 1460 surpasses its com petition in speed and output capabilities with a 1GHz gain-bandwidth product, a


    OCR Scan     		00V///sec 150mA supe275° 25MHz 32MHz 36MHz 37MHz 45MHz 50MHz 50V//iS TELEDYNE PHILBRICK PDF

    n-channel enhancement mode vmos power fet

    Abstract: DV1201K
    Text: M/A-con p h i as in c be |sb4aaos DDoamo N-CHANNEL ENHANCEMENT-MODE RF POWER FETs DV1201K i * W~ d 7 ^ j/; i î M/A-COM PHI, INC" The DV1201K is a VMOS N-channel enhancement mode RF power FET in a TO-39 package. This 1W device is ideal for low level amplifier or oscillator applications


    OCR Scan     		DV1201K DV1201K n-channel enhancement mode vmos power fet PDF

    ARCO

    Abstract: No abstract text available
    Text: H I INC 5 6 4 2 2 1S_M ZA^CDIL ÖS DE I 85D Sb4EEGS 00454 D DDGQ4SM N-CHANNEL ENHANCEMENT-MODE RF POw E r FETs M DV2860T, DV2860U fa C Q * M/A-COM PHI, INC. The DV2860 is a VMOS N-channel enhancement mode RF power FET. This 60W device is ideal for high power final amplifier applications, push-pull or single end­


    OCR Scan     		DV2860T, DV2860U DV2860 7-100pF) ARCO PDF

    cm500ha-34a

    Abstract: vmos CM100DY-34A CM400DY-34A series connection igbt cm200dy-34a IGBT cross CM100DU-34KA CM200DU-34KA CM300DY-34A
    Text: NEW 1700V A-SERIES IGBT MODULES WITHS CSTBT AND IMPROVED FWDi By Nicholas Clark1, John Donlon1, Shinichi Iura2 1 Powerex Inc., Youngwood, PA, USA 2) Power Device Works, Mitsubishi Electric Corp., Fukuoka, Japan Abstract: This paper presents a new series of 1700V IGBT Insulated Gate Bipolar Transistor) modules using


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    VMOS Transistor

    Abstract: block diagram of intel 8255 chip vmos intel 8085 bubble memory BPK70 INTEL 7250
    Text: ¡y G M Ä liW in te l 7250 COIL PRE-DRIVER FOR BUBBLE MEMORIES • Very Low Power Only One Power Supply Required, + 12V ■ Power Fail Reset for Maximum Protection of Bubble Memory CMOS Technology ■ TTL Compatible Inputs Standard 16-Piri Dual In-Line Package


    OCR Scan     		16-Piri 16-LEAD VMOS Transistor block diagram of intel 8255 chip vmos intel 8085 bubble memory BPK70 INTEL 7250 PDF