1461 smd
Abstract: D1207 MSK1461 MSK1461B MSK1461E
Text: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. HIGH SPEED/VOLTAGE OP AMP 1461 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Extremely Fast - 500v/µS Wide Supply Range ±15V to ±45V VMOS Output, No Secondary Breakdown Large Gain-Bandwidth Product
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MIL-PRF-38534
800mA
MSK1461
MSK1461E
MSK1461B
1461 smd
D1207
MSK1461
MSK1461B
MSK1461E
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vmos fet
Abstract: VMOS AUDIO AMPLIFIER vmos audio circuit MSK1461 MSK1461B
Text: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 1461 HIGH SPEED/VOLTAGE OP AMP 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: Extremely Fast - 500v/µS Wide Supply Range ±15V to ±45V VMOS Output, No S.O.A. Restrictions
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MIL-PRF-38534
800mA
MSK1461
MSK1461B
Military-Mil-PRF-38534
vmos fet
VMOS AUDIO AMPLIFIER
vmos audio circuit
MSK1461
MSK1461B
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A19 SMD transistor
Abstract: No abstract text available
Text: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 1461 HIGH SPEED/VOLTAGE OP AMP 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: Extremely Fast - 500v/µS Wide Supply Range ±15V to ±45V VMOS Output, No Secondary Breakdown
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MIL-PRF-38534
500v/Â
800mA
MSK1461
MSK1461E
MSK1461B
A19 SMD transistor
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cm500ha-34a
Abstract: vmos CM100DY-34A CM400DY-34A series connection igbt cm200dy-34a IGBT cross CM100DU-34KA CM200DU-34KA CM300DY-34A
Text: NEW 1700V A-SERIES IGBT MODULES WITHS CSTBT AND IMPROVED FWDi By Nicholas Clark1, John Donlon1, Shinichi Iura2 1 Powerex Inc., Youngwood, PA, USA 2) Power Device Works, Mitsubishi Electric Corp., Fukuoka, Japan Abstract: This paper presents a new series of 1700V IGBT Insulated Gate Bipolar Transistor) modules using
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BD512 mosfet
Abstract: itt transistoren Relais ITT halbleiterwerk transistor 2N 3055 ITT Intermetall Leuchtdiode CQY 40 transistor BD 522 schaltregler BD512
Text: VMOS Transistoren Eigenschaften und Schaltungsbeispiele 6240-09-2 D INTERMETALL Halbleiterwerk der Deutsche ITT Industries GmbH VMOS-Transistoren Eigenschaften und Schaltungsbeispiele Zusammengestellt von folgenden Mitarbeitern der ITT Semiconductors Gruppe
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BS212
Abstract: GG01 BS192
Text: I T T CORP/ I T T CMPNTS 41E D B 4bfi2bñ4 GG01403 b H I T O 'T '- 'll- 'L 'S VMOS TRANSISTORS N-Channel VMOS Transistors Enhancement-Mode MOSFETs featuring high input impedance, high power gain, fast switching times, CMOS compatibility, no second breakdown,
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GG01403
BS107
BS108
BS112
BS170
BS189
BS212
GG01
BS192
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BS192
Abstract: 10D3 BS170 v-mos din 41870 BS209
Text: ARR4955 I T T SEMICONDUCTORS 07 DE I 4hû 4TSS 87 D 0 2 3 2 5 D 7-. VMOS TRANSISTORS 0GDE3SS 2 N-Channel VMOS Transistors Enhancement-Mode MOSFETs featuring high input impedance, high power gain, fast switching times, CMOS compatibility, no second breakdown,
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ARR4955
-TO-92)
BS107
BS108
BS109
BS112
BS170
BS192
BS208
BS209
10D3
BS170 v-mos
din 41870
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BS192
Abstract: BS212 D 92 M - 03 DIODE D 92 M - 02 DIODE 10D3 2n3904, itt c 92 M - 02 DIODE bs189
Text: I T T CORP/ I T T CMPNTS 31E D • 4böEböH ÜQQ1 3 Q 7 T ■ VMOS NPN AND PNP TRANSISTORS N-Channel VMOS Transistors Enhancement-Mode MOSFETsfeaturing high input impedance, high power gain, fast switching times, CMOS compatibility, no second breakdown, no thermal runaway.
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BS107
BS108
BS112
BS170
BS189
170rox.
DO-41
DO-35
BS192
BS212
D 92 M - 03 DIODE
D 92 M - 02 DIODE
10D3
2n3904, itt
c 92 M - 02 DIODE
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intel 7110
Abstract: vmos fet intel 8085 INTEL 7254 vmos BPK70 DIODE S4 3a vmos to bubble memories 7254 coil driver
Text: intei 7254 QUAD VMOS DRIVE TRANSISTORS FOR BUBBLE MEMORIES Designed to Drive X and Y Coils of 7110 Bubble Memories • Operates from V qd Only No Bias Currents Required ■ VMOS FET Technology Fast Turn-on and Turn-off — 30 ns Maximum ■ N-Channel and P-Channel Transistors
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14-Pin
HP21SA
intel 7110
vmos fet
intel 8085
INTEL 7254
vmos
BPK70
DIODE S4 3a
vmos to
bubble memories
7254 coil driver
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Siliconix VMOS
Abstract: vmos vmos fet Siliconix Application Note AN76-3 VN46AF mosfet vn66af VMOS Transistor CD4011 VN66AF
Text: AN79-4 H Siliconix APPLICATION NOTE Driving VMOS Power FETs Dave Hoffm an January 1979 INTRODUCTION Using VMOS Pow er FETs you can achieve perform ance never before possible—if you drive them properly. This article describes circuits and suggests design m ethods to
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AN79-3.
AN76-3.
Siliconix VMOS
vmos
vmos fet
Siliconix Application Note
AN76-3
VN46AF
mosfet vn66af
VMOS Transistor
CD4011
VN66AF
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1461 transistor
Abstract: 1461 TELEDYNE 1461
Text: WTELEDYNE COMPONENTS 1461 OPERATIONAL AMPLIFIER — HIGH-SPEED, HIGH-POWER, VMOS-OUTPUT FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ The 1461 is an extremely fast, FET-input, VMOS-output, power operational amplifier. It operates from ±15V to +40V supplies, has output voltages up to ±34V, and output
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TELEDYNE 1463
Abstract: 4025 to-3 ti211 vmos VMOS Transistor teledyne 4027
Text: TELEDYNE SaE D COMPONENTS M- a 'I^ b O S 0 0 ü ti211 s 1463 High Speed High Power VMOS Output Op Amp The 1463 is third in a series of high speed, FET input, VMOS output power op amps. It operates from ±15V to ±40V supplies and has a guaranteed output of ±28V at 1A with ±36V supplies.
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ti211
250ns
TELEDYNE 1463
4025 to-3
vmos
VMOS Transistor
teledyne 4027
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TELEDYNE 1461
Abstract: TELEDYNE+1461
Text: TELEDYNE C O M PO N EN T S 3bE D • â^l?tOE DGG?fe.2b b « T S C * T * 7 0v- 0 ‘ 7 - \ C WTELEDYNE COMPONENTS 1461 OPERATIONAL AMPLIFIER — HIGH-SPEED, HIGH-POWER, VMOS-OUTPUT FEATURES GENERAL DESCRIPTION ■ ■ ■ ■ ■ ■ ■ The 1461 is an extremely fast, FET-input, VMOS-output, power operational amplifier. It operates from +15V to
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1461X1
01--Lf
fiS17bOB
DD07b3B
TELEDYNE 1461
TELEDYNE+1461
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VMOS Transistor
Abstract: BS170 v-mos AH47 BS170
Text: BS170 Enhancement Mode N-Channel VMOS Transistor Features: High input impedance High speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown 4 CD •si' — •HA rr ♦ r^‘ i m ax.Q 5$ Plastic case « JEDEC TO-92
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BS170
100/xA,
VMOS Transistor
BS170 v-mos
AH47
BS170
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VMOS Transistor
Abstract: BS250
Text: BS250 Enhancement Mode P-Channel VMOS Transistor Features: High input impedance High speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown m ax.Q 5# Plastic case ~ JEDEC TO-92 TO-18 compatible
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BS250
VMOS Transistor
BS250
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intel 8085
Abstract: intel 7110 Bubble Memory 8086 8086 8088 vmos vmos to 7230 7904 BPK70
Text: inteT BPK70 1 MBIT BUBBLE STORAGE SUB-SYSTEM One 7250 Coil Pre-Driver Contains Components for Production of 1 MBit Bubble Storage Sub-System Two 7254 Quad VMOS Drive Transistors • One 7230 Current Pulse Generator One 7110 1 MBit Bubble Memory One 7242 Dual Formatter/Sense
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BPK70
2x7254
BPK70-0
BPK70-1
BPK70-2
intel 8085
intel 7110
Bubble Memory
8086
8086 8088
vmos
vmos to
7230
7904
BPK70
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VN66AK
Abstract: VMOS Transistor VN88AF Siliconix VMOS VN66AF equivalent VN46AF equivalent VN46AF VN98AK VMOS VN88AF SILICONIX
Text: AN77-2 s Silico n ix APPLICATION NOTE Don’t Trade Off Analog Switch Specs. V M O S -A Solution to High Speed, High Current, Low Resistance Analog Switches Walt Heinzer INTRODUCTION F or analog switches, Vertical MOS VMOS transistors give you a nearly ideal com bination o f characteristics—w ithout
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VN66AK
VN66AK.
VMOS Transistor
VN88AF
Siliconix VMOS
VN66AF equivalent
VN46AF equivalent
VN46AF
VN98AK
VMOS
VN88AF SILICONIX
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Untitled
Abstract: No abstract text available
Text: KENNEDY H S M.S. KENNEDY CORP. CORP b3E D • S1343D0 D0002D2 HIGH SPEED/VOLTAGE OP AMP SS2 ■ MSK 1461 (315) 699-9201 8170 Thompson Road • Cicero, N.Y. 13039 FEATURES: • • • • • • Extremely Fast Wide Supply Range ±15V to ±45V VMOS Output, No S.O.A. Restrictions
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S1343D0
D0002D2
1461B
Mil-H-38534
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sk1461
Abstract: sk 100 transistor
Text: M í f t H,GH SPoEpEampOLTAGE 1 4 6 1 M .S . K E N N E D Y C O R P 315 699-9201 8170 Thompson Road •Cicero, N.Y. 13039 FEATURES: Extremely Fast Wide Supply Range ±15V to ±45V VMOS Output, No S.O.A. Restrictions Large Galn-Bandwldth Product FET Input
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1461B
MII-H-38534
sk1461
sk 100 transistor
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TELEDYNE PHILBRICK
Abstract: TELEDYNE PHILBRICK 15v, 50 mA power supply Philbrick T1460 TELEDYNE PHILBRICK 1460 teledyne 1460 teledyne video
Text: TELEDYNE COMPONENTS 2ÖE D IH 0T17tiGH ÜQQbBüS T • 1460 High Power VMOS Output Operational Amplifier The 1460 heralds a new era in high power, wideband opera tional amplifiers. Originally designed for ATE signal amplifica tion and pin driving, the 1460 surpasses its competition in speed
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0T17tiGH
00V///sec
150mA
55MHz
50MHz
32MHz
17MHz
10MHz
25MHz
TELEDYNE PHILBRICK
TELEDYNE PHILBRICK 15v, 50 mA power supply
Philbrick
T1460
TELEDYNE PHILBRICK 1460
teledyne 1460
teledyne video
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TELEDYNE PHILBRICK
Abstract: No abstract text available
Text: 1460 High Power VMOS Output Operational Amplifier The 1460 heralds a new era in high power, wideband opera tional amplifiers. Originally designed for ATE signal am plifica tion and pin driving, the 1460 surpasses its com petition in speed and output capabilities with a 1GHz gain-bandwidth product, a
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00V///sec
150mA
supe275°
25MHz
32MHz
36MHz
37MHz
45MHz
50MHz
50V//iS
TELEDYNE PHILBRICK
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n-channel enhancement mode vmos power fet
Abstract: DV1201K
Text: M/A-con p h i as in c be |sb4aaos DDoamo N-CHANNEL ENHANCEMENT-MODE RF POWER FETs DV1201K i * W~ d 7 ^ j/; i î M/A-COM PHI, INC" The DV1201K is a VMOS N-channel enhancement mode RF power FET in a TO-39 package. This 1W device is ideal for low level amplifier or oscillator applications
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DV1201K
DV1201K
n-channel enhancement mode vmos power fet
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ARCO
Abstract: No abstract text available
Text: H I INC 5 6 4 2 2 1S_M ZA^CDIL ÖS DE I 85D Sb4EEGS 00454 D DDGQ4SM N-CHANNEL ENHANCEMENT-MODE RF POw E r FETs M DV2860T, DV2860U fa C Q * M/A-COM PHI, INC. The DV2860 is a VMOS N-channel enhancement mode RF power FET. This 60W device is ideal for high power final amplifier applications, push-pull or single end
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DV2860T,
DV2860U
DV2860
7-100pF)
ARCO
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VMOS Transistor
Abstract: block diagram of intel 8255 chip vmos intel 8085 bubble memory BPK70 INTEL 7250
Text: ¡y G M Ä liW in te l 7250 COIL PRE-DRIVER FOR BUBBLE MEMORIES • Very Low Power Only One Power Supply Required, + 12V ■ Power Fail Reset for Maximum Protection of Bubble Memory CMOS Technology ■ TTL Compatible Inputs Standard 16-Piri Dual In-Line Package
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16-Piri
16-LEAD
VMOS Transistor
block diagram of intel 8255 chip
vmos
intel 8085
bubble memory
BPK70
INTEL 7250
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