1461 smd
Abstract: D1207 MSK1461 MSK1461B MSK1461E
Text: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. HIGH SPEED/VOLTAGE OP AMP 1461 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Extremely Fast - 500v/µS Wide Supply Range ±15V to ±45V VMOS Output, No Secondary Breakdown Large Gain-Bandwidth Product
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MIL-PRF-38534
800mA
MSK1461
MSK1461E
MSK1461B
1461 smd
D1207
MSK1461
MSK1461B
MSK1461E
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vmos fet
Abstract: VMOS AUDIO AMPLIFIER vmos audio circuit MSK1461 MSK1461B
Text: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 1461 HIGH SPEED/VOLTAGE OP AMP 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: Extremely Fast - 500v/µS Wide Supply Range ±15V to ±45V VMOS Output, No S.O.A. Restrictions
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MIL-PRF-38534
800mA
MSK1461
MSK1461B
Military-Mil-PRF-38534
vmos fet
VMOS AUDIO AMPLIFIER
vmos audio circuit
MSK1461
MSK1461B
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A19 SMD transistor
Abstract: No abstract text available
Text: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 1461 HIGH SPEED/VOLTAGE OP AMP 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: Extremely Fast - 500v/µS Wide Supply Range ±15V to ±45V VMOS Output, No Secondary Breakdown
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MIL-PRF-38534
500v/Â
800mA
MSK1461
MSK1461E
MSK1461B
A19 SMD transistor
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800w rf power amplifier circuit diagram
Abstract: MRF6VP11KH 1000w power amplifier circuit diagram 200W PUSH-PULL 1000w power AMPLIFIER pcb circuit amplifier circuit diagram class D 1000w 500w FM power amplifier circuit diagram MRFE6VP6300H RF Amplifier 500w 175 mhz 1000w class d circuit diagram schematics
Text: White Paper 50V RF LDMOS An ideal RF Power technology for ISM, broadcast and commercial aerospace applications Freescale Semiconductor www.freescale.com/rfpower I. INTRODUCTION RF LDMOS RF Laterally Diffused MOS , hereafter referred to as LDMOS, is the dominant device technology used in
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1990s.
2010are
50VRFLDMOSWP
800w rf power amplifier circuit diagram
MRF6VP11KH
1000w power amplifier circuit diagram
200W PUSH-PULL
1000w power AMPLIFIER pcb circuit
amplifier circuit diagram class D 1000w
500w FM power amplifier circuit diagram
MRFE6VP6300H
RF Amplifier 500w 175 mhz
1000w class d circuit diagram schematics
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This article
Abstract: vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet
Text: Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of introduction some 15 years ago. Original manufacturers, Siliconix and Acrian have left
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namely988.
AR346.
AN1107.
This article
vmil120ft
acrian RF POWER TRANSISTOR
VMIL20FT
F2012 mosfet
acrian RF MOSFET
AR346
acrian RF MOSFET vmil40ft
VMIL40FT
n-channel enhancement mode vmos power fet
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Untitled
Abstract: No abstract text available
Text: Issued September 2000 232-5323 Data Pack K RS ESD products Data Sheet What is static electricity? Table 2 Component sensitivity Static electricity is a common phenomenon which is present in our everyday lives. Clinging clothes, frizzy hair and the ‘zap’ received when getting out of a car are all examples of
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217-9164
Abstract: No abstract text available
Text: Issued March 1997 232-5323 Data Pack K RS ESD products Data Sheet What is static electricity? Table 2 Component sensitivity Static electricity is a common phenomenon which is present in our everyday lives. Clinging clothes, frizzy hair and the ‘zap’ received when getting out of a car are all examples of
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TELEDYNE 1463
Abstract: VMOS AMPLIFIERS vmos TELEDYNE PHILBRICK OP AMP TELEDYNE PHILBRICK power op amps
Text: 1463 High Speed High Power VMOS Output Op Amp The 1463 is third in a series of high speed, FET input, VMOS output power op amps. It operates from ±15V to ±40V supplies and has a guaranteed output of ±28V at 1A with ±36V supplies. The complementary VMOS output stage eliminates the safe
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250ns
200pA
TELEDYNE 1463
VMOS AMPLIFIERS
vmos
TELEDYNE PHILBRICK OP AMP
TELEDYNE PHILBRICK
power op amps
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TELEDYNE PHILBRICK, OP AMP
Abstract: TELEDYNE PHILBRICK OP AMP TELEDYNE PHILBRICK
Text: 1461 High Speed High Power VMOS Output Op Amp The 1461 is an extremely fast, FET input, VMOS output, power op amp. It operates from ±15V to ±40V supplies and has output voltages up to ±34V and output currents up to ±750mA. Its unique VMOS output stage eliminates the safe operating
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750mA.
115dB
TELEDYNE PHILBRICK, OP AMP
TELEDYNE PHILBRICK OP AMP
TELEDYNE PHILBRICK
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BD512 mosfet
Abstract: itt transistoren Relais ITT halbleiterwerk transistor 2N 3055 ITT Intermetall Leuchtdiode CQY 40 transistor BD 522 schaltregler BD512
Text: VMOS Transistoren Eigenschaften und Schaltungsbeispiele 6240-09-2 D INTERMETALL Halbleiterwerk der Deutsche ITT Industries GmbH VMOS-Transistoren Eigenschaften und Schaltungsbeispiele Zusammengestellt von folgenden Mitarbeitern der ITT Semiconductors Gruppe
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Siliconix VMOS
Abstract: vmos vmos fet Siliconix Application Note AN76-3 VN46AF mosfet vn66af VMOS Transistor CD4011 VN66AF
Text: AN79-4 H Siliconix APPLICATION NOTE Driving VMOS Power FETs Dave Hoffm an January 1979 INTRODUCTION Using VMOS Pow er FETs you can achieve perform ance never before possible—if you drive them properly. This article describes circuits and suggests design m ethods to
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AN79-3.
AN76-3.
Siliconix VMOS
vmos
vmos fet
Siliconix Application Note
AN76-3
VN46AF
mosfet vn66af
VMOS Transistor
CD4011
VN66AF
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1461 transistor
Abstract: 1461 TELEDYNE 1461
Text: WTELEDYNE COMPONENTS 1461 OPERATIONAL AMPLIFIER — HIGH-SPEED, HIGH-POWER, VMOS-OUTPUT FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ The 1461 is an extremely fast, FET-input, VMOS-output, power operational amplifier. It operates from ±15V to +40V supplies, has output voltages up to ±34V, and output
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intel 7110
Abstract: vmos fet intel 8085 INTEL 7254 vmos BPK70 DIODE S4 3a vmos to bubble memories 7254 coil driver
Text: intei 7254 QUAD VMOS DRIVE TRANSISTORS FOR BUBBLE MEMORIES Designed to Drive X and Y Coils of 7110 Bubble Memories • Operates from V qd Only No Bias Currents Required ■ VMOS FET Technology Fast Turn-on and Turn-off — 30 ns Maximum ■ N-Channel and P-Channel Transistors
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14-Pin
HP21SA
intel 7110
vmos fet
intel 8085
INTEL 7254
vmos
BPK70
DIODE S4 3a
vmos to
bubble memories
7254 coil driver
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TELEDYNE PHILBRICK 4022
Abstract: TELEDYNE 1461 TELEDYNE PHILBRICK OP AMP vmos TELEDYNE PHILBRICK V to F
Text: TELEDY NE COMPONENTS 5ÖE D ÔTlTbOa ÜOÜbSQÖ 5 1461 • r -' 7 ? - 2 2 High Speed High Power VMOS Output Op Amp The 1461 is an extremely fast, FET input, VMOS output, power op amp. It operates from ±15V to ±40V supplies and has output voltages up to ±34V and output currents up to ±750mA.
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750mA.
115dB
100/iF
TELEDYNE PHILBRICK 4022
TELEDYNE 1461
TELEDYNE PHILBRICK OP AMP
vmos
TELEDYNE PHILBRICK V to F
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TELEDYNE 1461
Abstract: TELEDYNE+1461
Text: TELEDYNE C O M PO N EN T S 3bE D • â^l?tOE DGG?fe.2b b « T S C * T * 7 0v- 0 ‘ 7 - \ C WTELEDYNE COMPONENTS 1461 OPERATIONAL AMPLIFIER — HIGH-SPEED, HIGH-POWER, VMOS-OUTPUT FEATURES GENERAL DESCRIPTION ■ ■ ■ ■ ■ ■ ■ The 1461 is an extremely fast, FET-input, VMOS-output, power operational amplifier. It operates from +15V to
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1461X1
01--Lf
fiS17bOB
DD07b3B
TELEDYNE 1461
TELEDYNE+1461
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sk1461
Abstract: sk 100 transistor
Text: M í f t H,GH SPoEpEampOLTAGE 1 4 6 1 M .S . K E N N E D Y C O R P 315 699-9201 8170 Thompson Road •Cicero, N.Y. 13039 FEATURES: Extremely Fast Wide Supply Range ±15V to ±45V VMOS Output, No S.O.A. Restrictions Large Galn-Bandwldth Product FET Input
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1461B
MII-H-38534
sk1461
sk 100 transistor
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Untitled
Abstract: No abstract text available
Text: KENNEDY H S M.S. KENNEDY CORP. CORP b3E D • S1343D0 D0002D2 HIGH SPEED/VOLTAGE OP AMP SS2 ■ MSK 1461 (315) 699-9201 8170 Thompson Road • Cicero, N.Y. 13039 FEATURES: • • • • • • Extremely Fast Wide Supply Range ±15V to ±45V VMOS Output, No S.O.A. Restrictions
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S1343D0
D0002D2
1461B
Mil-H-38534
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RCA 740
Abstract: B-23 C123 E223 Bc 188 I5B2 3 track magnetic head card reader TCA 3189 DP-005-2-00 "tape file"
Text: Virtual Memory Operating System VMOS System Management Reference Manual May 1972 DP-005-2-00 Series 70 Publications Building 214-1 Cinnammson, N J . 08 077 JL. IMBi nrSPER^Y RAND • ■ |UN!VAC mI SERIES 70 The inform ation contained herein is subject to change w ithout notice. Revisions may be
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DP-005-2-00
08CI77
DP-005-2-00)
RCA 740
B-23
C123
E223
Bc 188
I5B2
3 track magnetic head card reader
TCA 3189
"tape file"
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n-channel enhancement mode vmos power fet
Abstract: DV1201K
Text: M/A-con p h i as in c be |sb4aaos DDoamo N-CHANNEL ENHANCEMENT-MODE RF POWER FETs DV1201K i * W~ d 7 ^ j/; i î M/A-COM PHI, INC" The DV1201K is a VMOS N-channel enhancement mode RF power FET in a TO-39 package. This 1W device is ideal for low level amplifier or oscillator applications
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DV1201K
DV1201K
n-channel enhancement mode vmos power fet
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Untitled
Abstract: No abstract text available
Text: ISO 9001 CERTIFIED BY DESC HIGH SPEED/VOLTAGE OP 1461 AMP M.S. KENNEDY CORP. 8170 Thompson Road C icero, N.Y. 13039 315 MIL-PRF-38534 FEATURES: • E xtre m e ly • W id e Fast • VMOS O u tp u t, • La rge G a in -B a n d w id th • FET S u p p ly -
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MIL-PRF-38534
800mA
MSK1461
il-PRF-38534
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ARCO
Abstract: No abstract text available
Text: H I INC 5 6 4 2 2 1S_M ZA^CDIL ÖS DE I 85D Sb4EEGS 00454 D DDGQ4SM N-CHANNEL ENHANCEMENT-MODE RF POw E r FETs M DV2860T, DV2860U fa C Q * M/A-COM PHI, INC. The DV2860 is a VMOS N-channel enhancement mode RF power FET. This 60W device is ideal for high power final amplifier applications, push-pull or single end
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DV2860T,
DV2860U
DV2860
7-100pF)
ARCO
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siliconix fet
Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility
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J-23548
K24123
i39-40i
NZ3766
53-C-03
siliconix fet
Transistor E112 FET N-Channel
JFET TRANSISTOR REPLACEMENT GUIDE j201
E112 jfet
jfet bfw10 terminals
JFET BFW10 SPECIFICATIONS
4856a mosfet
Transistor E112 FET
FETs in Balanced Mixers Ed Oxner
equivalent components FET BFW10
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HE97211
Abstract: TI710
Text: HITACHI R/tOmCHROSVfATEO IMAGISMO DEVICE HE 07211 MOS IMAGING DEVICE 2/3 Inch, 320 H x 244 (V) Picture element This data sheet is a revised edition o f catalog No, CE-E532. HITACHI HE97211 Is two-dimensional MOS type imaging device for TV cameras. The device comprises a photodiode
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44Tti2Ql
ODQSBB11!
T-41-55
HE97211
27/um
27/xm
TI710
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TELEDYNE PHILBRICK 1464
Abstract: c 1464 power transistor
Text: 2 ÖE D iTELEDYNE COMPONENTS • öWbQE QÜGbEl 4 ü m 1464 -7 9 -/Ö High Speed Power MOSFET Driver Amplifier The 1464 is a high speed, FET input, transconductance ampli fier, designed to drive an external power MOSFET output stage. The use of an external output stage makes the 1464 extremely
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200pA
000/umhos
100dB.
100mA)
00V//us
26MHz
103dB
125mA
110ns
560mA)
TELEDYNE PHILBRICK 1464
c 1464 power transistor
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