VK200 COIL Search Results

VK200 COIL Result Highlights (5)

Part	Manufacturer	Description
DFE2016CKA-1R0M=P2	Murata Manufacturing Co Ltd	Fixed IND 1uH 1800mA NONAUTO
LQW18CN55NJ0HD	Murata Manufacturing Co Ltd	Fixed IND 55nH 1500mA POWRTRN
LQW18CNR56J0HD	Murata Manufacturing Co Ltd	Fixed IND 560nH 450mA POWRTRN
DFE322520F-2R2M=P2	Murata Manufacturing Co Ltd	Fixed IND 2.2uH 4400mA NONAUTO
LQW18CN4N9D0HD	Murata Manufacturing Co Ltd	Fixed IND 4.9nH 2600mA POWRTRN

VK200 COIL Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
vk200 Abstract: vk200 coil VK200-19/4B J121 power unit MRF314 Text: Order this document by MRF314/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors MRF314 . . . designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc	Original	MRF314/D MRF314 vk200 vk200 coil VK200-19/4B J121 power unit MRF314	PDF
atc 1117 Abstract: MRF316 VK200 Text: Order this document by MRF316/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF316 . . . designed primarily for wideband large–signal output amplifier stages in the 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc	Original	MRF316/D MRF316 atc 1117 MRF316 VK200	PDF
transistor MRF321 Abstract: JMC5201 redcap erie redcap capacitors vk200 coil erie redcap vk200 1N4001 MRF321 case 244-04 Text: Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc	Original	MRF321/D MRF321 transistor MRF321 JMC5201 redcap erie redcap capacitors vk200 coil erie redcap vk200 1N4001 MRF321 case 244-04	PDF
transistor MRF317 Abstract: atc 1117 case 316-01 RF POWER TRANSISTOR NPN mrf317 8w RF POWER TRANSISTOR NPN vk200 J102 MRF317 1117 atc Text: Order this document by MRF317/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF317 . . . designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc	Original	MRF317/D MRF317 Carrier/120 transistor MRF317 atc 1117 case 316-01 RF POWER TRANSISTOR NPN mrf317 8w RF POWER TRANSISTOR NPN vk200 J102 MRF317 1117 atc	PDF
Johanson Piston Trimmer Abstract: J154 J329 J253 vk200 erie redcap capacitors MRF327 NPN RF Amplifier Text: Order this document by MRF327/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF327 . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc	Original	MRF327/D MRF327 Johanson Piston Trimmer J154 J329 J253 vk200 erie redcap capacitors MRF327 NPN RF Amplifier	PDF
vk200 coil Abstract: MICA 06 MRF316 VK200 MOTOROLA 381 equivalent Text: MOTOROLA Order this document by MRF316/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF316 . . . designed primarily for wideband large–signal output amplifier stages in the 30 – 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc	Original	MRF316/D MRF316 MRF316/D* vk200 coil MICA 06 MRF316 VK200 MOTOROLA 381 equivalent	PDF
VK200-19/4B Abstract: 5Bp power control motorola rf power MRF314 "30 mhz" driver Amplifier motorola rf device data book vk200 coil VK200 J121 power unit Text: MOTOROLA Order this document by MRF314/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors MRF314 . . . designed primarily for wideband large–signal driver and output amplifier stages in the 30 – 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc	Original	MRF314/D MRF314 MRF314/D* VK200-19/4B 5Bp power control motorola rf power MRF314 "30 mhz" driver Amplifier motorola rf device data book vk200 coil VK200 J121 power unit	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband	Original	MRF1535T1 AN215A,	PDF
MRF321 Abstract: 3 w RF POWER TRANSISTOR NPN erie redcap capacitors 1N4001 VK200 transistor MRF321 Text: MOTOROLA Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200 – 500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc	Original	MRF321/D MRF321 MRF321/D* MRF321 3 w RF POWER TRANSISTOR NPN erie redcap capacitors 1N4001 VK200 transistor MRF321	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 6, 1/2005 RF Power Field Effect Transistors MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices	Original	AN215A, MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1	PDF
motorola 5118 uhf Abstract: motorola 5118 wireless Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices	Original	AN215A, MRF1535T1 MRF1535FT1 motorola 5118 uhf motorola 5118 wireless	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF327/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF327 . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc	Original	MRF327/D MRF327 MRF327/D*	PDF
transistor MRF321 Abstract: JMC 1200 Text: MOTOROLA Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200 – 500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts	Original	MRF321/D MRF321 MRF321 MRF321/D* MRF321/D transistor MRF321 JMC 1200	PDF
Johanson Piston Trimmer Abstract: MRF327 erie redcap capacitors VK200 Text: MOTOROLA Order this document by MRF327/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF327 . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc	Original	MRF327/D MRF327 MRF327/D* Johanson Piston Trimmer MRF327 erie redcap capacitors VK200	PDF

FERROXCUBE VK200 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband	Original	MRF1535T1/D MRF1535T1 MRF1535T1/D FERROXCUBE VK200	PDF
mrf3163 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF316/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor MRF316 . . . designed primarily for wideband large–signal output amplifier stages in the 30 – 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc	Original	MRF316/D MRF316 MRF316/D mrf3163	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband	Original	MRF1535T1/D MRF1535T1	PDF
L5N1 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband	Original	MRF1535T1/D MRF1535T1 L5N1	PDF
transistor MRF317 Abstract: MRF317 mrf317 datasheet RF POWER TRANSISTOR NPN mrf317 J102 VK200 mrf317" "100 6W" motorola rf Power Transistor mrf317 Text: MOTOROLA Order this document by MRF317/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF317 . . . designed primarily for wideband large–signal output amplifier stages in 30 – 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc	Original	MRF317/D MRF317 Carrier/120 MRF317/D* transistor MRF317 MRF317 mrf317 datasheet RF POWER TRANSISTOR NPN mrf317 J102 VK200 mrf317" "100 6W" motorola rf Power Transistor mrf317	PDF
motorola rf Power Transistor mrf317 Abstract: hfc4 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed primarily for wideband large-signal output amplifier stages in 30 -2 0 0 MHz frequency range. • • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W	OCR Scan	Carrier/120 MBF317 motorola rf Power Transistor mrf317 hfc4	PDF
Transistor TP 2307 Abstract: motorola rf Power Transistor mrf317 F317 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F317 The RF Line NPN Silicon RF P o w er Transistor . . . designed prim arily for w ideband large-signal output am plifier stages in 3 0 -2 0 0 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W	OCR Scan	Carrier/120 MRF317 Transistor TP 2307 motorola rf Power Transistor mrf317 F317	PDF
transistor MRF317 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed primarily for wideband large-signal outpul amplifier stages in 3 0 -2 0 0 MHz frequency range. • • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W	OCR Scan	Carrier/120 MRF317 transistor MRF317	PDF
mrf317" Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . designed primarily for wideband large-signal output amplifier stages in 30-200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W Minimum Gain = 9.0 dB	OCR Scan	Carrier/120 MRF317 mrf317"	PDF
MRF317 Abstract: transistor MRF317 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed prim arily for w ideband large-signal output am plifier stages in 3 0 -2 0 0 MHz frequency range. • • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W	OCR Scan	Carrier/120 MRF317 transistor MRF317	PDF

VK200 COIL Search Results

VK200 COIL Result Highlights (5)

VK200 COIL Datasheets Context Search

vk200

atc 1117

transistor MRF321

transistor MRF317

Johanson Piston Trimmer

vk200 coil

VK200-19/4B

Untitled

MRF321

Untitled

motorola 5118 uhf

Untitled

transistor MRF321

Johanson Piston Trimmer

FERROXCUBE VK200

mrf3163

Untitled

L5N1

transistor MRF317

motorola rf Power Transistor mrf317

Transistor TP 2307

transistor MRF317

mrf317"

MRF317