DTMF encoder
Abstract: transistors BC 458 DTMF decoder GOERTZEL ALGORITHM SOURCE CODE transistor m 9587 BC 458 transistor BC 458 dtmf principle DTMF Tone Decoder goertzel
Text: DTMF Tone Generation and Detection An Implementation Using the TMS320C54x Application Report 1997 Digital Signal Processing Solutions Printed in U.S.A., June 1997 SPRA096 DTMF Tone Generation and Detection An Implementation Using the TMS320C54x SPRA096 June 1997
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TMS320C54x
SPRA096
0301h
0000h
0001h
0002h
0100h
0101h
DTMF encoder
transistors BC 458
DTMF decoder
GOERTZEL ALGORITHM SOURCE CODE
transistor m 9587
BC 458
transistor BC 458
dtmf principle
DTMF Tone Decoder
goertzel
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GOERTZEL ALGORITHM SOURCE CODE for dtmf in c
Abstract: SPRA096 DTMF encoder mathcad AR51A DTMF Tone Decoder GOERTZEL ALGORITHM SOURCE CODE TR-TSY-000763 82263 D-10
Text: DTMF Tone Generation and Detection An Implementation Using the TMS320C54x Application Report 1997 Digital Signal Processing Solutions Printed in U.S.A., June 1997 SPRA096 DTMF Tone Generation and Detection An Implementation Using the TMS320C54x SPRA096 June 1997
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Original
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TMS320C54x
SPRA096
GOERTZEL ALGORITHM SOURCE CODE for dtmf in c
SPRA096
DTMF encoder
mathcad
AR51A
DTMF Tone Decoder
GOERTZEL ALGORITHM SOURCE CODE
TR-TSY-000763
82263
D-10
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PDF
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DTMF encoder
Abstract: GOERTZEL ALGORITHM SOURCE CODE for dtmf in c DTMF Tone Decoder GOERTZEL ALGORITHM SOURCE CODE CM7291 D-10 TMS320 of DTMF Proximity Detector
Text: DTMF Tone Generation and Detection An Implementation Using the TMS320C54x Application Report 1997 Digital Signal Processing Solutions Printed in U.S.A., June 1997 SPRA096 DTMF Tone Generation and Detection An Implementation Using the TMS320C54x SPRA096 June 1997
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Original
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TMS320C54x
SPRA096
DTMF encoder
GOERTZEL ALGORITHM SOURCE CODE for dtmf in c
DTMF Tone Decoder
GOERTZEL ALGORITHM SOURCE CODE
CM7291
D-10
TMS320
of DTMF Proximity Detector
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MAGNETICA
Abstract: smd diode t8 Schottky electronic ballast for tube light 36 ELECTRONIC BALLAST 4 T8 SCHEMATIC 1N414 diode L6585 1n4007 sod123 1N4007 SOD80C package t8 ballast circuits ELECTRONIC BALLAST 2 LAMP SCHEMATIC
Text: AN3032 Application note STEVAL-ILB007V1, 2 x 58 W/T8 ballast based on the L6585DE suitable for 2 x 36 W/T8 lamp Introduction This application note describes a demonstration board able to drive 2 x 58 W linear T8 fluorescent tubes. The last section of the document describes the changes that need to be
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AN3032
STEVAL-ILB007V1,
L6585DE
MAGNETICA
smd diode t8 Schottky
electronic ballast for tube light 36
ELECTRONIC BALLAST 4 T8 SCHEMATIC
1N414 diode
L6585
1n4007 sod123
1N4007 SOD80C package
t8 ballast circuits
ELECTRONIC BALLAST 2 LAMP SCHEMATIC
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Untitled
Abstract: No abstract text available
Text: 123456 1789AB2CDE7B37FDE8B4D7AEB578B69D8 4B8F8D7 BA123 B4B !7B69D8 " C #$$ 4 B989B3%778 #7&B'& 4D9A 8F8D7 BA123 B4B !7B69D8 " #$$ 4 B" * #$$ 4 " #$$ 4 C77777BD246A4E5
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1789AB2CDE7B37FD
989B3
C77777
246A4E5
A8917B2
B4356B2
7EB70B"
7B7C27
7BA79ED
1B35B123456B
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PDF
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TO3 package RthJC
Abstract: No abstract text available
Text: / = 7 ^ 7# S G S -T H O M S O N [* ^ ô m [iO T « S B U X 4 7 /V 4 7 /V 4 7 FI B U X 4 7 A /V 4 7 A /4 7 A F I HIGH VOLTAGE POWER SWITCH D E S C R IP T IO N The BUX47/A, BUV47/A, BUV47FI/AFI are silicon multiepitaxial mesa NPN transistors mounted res
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BUX47/A,
BUV47/A,
BUV47FI/AFI
O-218
ISOWATT218
BUX47
BUV47
UV47FI
UX47A
UV47A
TO3 package RthJC
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PDF
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6SQ7
Abstract: UD DIODE ld 5172
Text: VEB WERK FÜR FERNMELDEWESEN 6SQ7 DUODIODE-TRIODE ~ T Kolbenabm essungen TECHNISCHE DATEN Heizung: H eizspannung 6,3 V H e izstro m 300 mA Betriebswerte für den Triodenteil: An o denspan nung U G itte rv o rs p a n n u n g A n o d e n stro m S te ilh e it
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OCR Scan
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/V/4/26
6SQ7
UD DIODE
ld 5172
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PDF
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service-mitteilungen
Abstract: Ziphona funkschau VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN servicemitteilungen Zittau Scans-048 color antenne Mitteilungen Sonneberg
Text: SERVICE-MITTEILUNGEN VEB IN D U S T R IE V E R T R IE B R U N D F U N K U N D FE R N S E H E N iR jie ri 1r a d i o -teievision 1 SEITE NOVEMBER 19 7 6 11 01-10 Radio-Phono-Kombinationen schienen umgekehrt proportional zur Entwicklung von Bausteinanlagen aus der Mode gekommen zu sein.
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PDF
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TFK 404
Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317
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20nttc*
10N12*
TFK 404
T1S58
BCI83L
Germanium diode OA 182
TFK diode
transistors 2n 945
v744
akai amplifier
tis62
BCI09
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PDF
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Untitled
Abstract: No abstract text available
Text: SG2172/3172 SILICON GENERAL ADVANCED DATA SHEET 3 AMP POWER OP AMP LINEAR IN TEGR ATED C IRCUITS DESCRIPTION FEATURES The SG2172/3172 is a power monolithic operational amplifier capable of operating with loads to 3A with a power supply range to 18V. Thermal
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SG2172/3172
SG2172/3172
SG3172P
O-220
SG2172R
SG3172R
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Untitled
Abstract: No abstract text available
Text: P54/74FCT640T/AT/CT—P54/74FCT643T/AT/CT OCTAL BIDIRECTIONAL TRANSCEIVERS WITH 3-STATE OUTPUTS FEATURES • Function, Pinout and Drive Compatible with the FCT and F Logic Power-off disable feature Matched Rise and Fall times ■ FCT-C speed at 4.4ns max. Com'l
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P54/74FCT640T/AT/CTâ
P54/74FCT643T/AT/CT
FCT640T,
640AT
640CT
643AT
643CT
MIL-STD-883,
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Microchip vk 1103
Abstract: No abstract text available
Text: fiW l e « « . 27LV128 M Ie r o o h Ip 128K 16K X 8 Low Voltage CMOS EPROM FEATURES DESCRIPTION • Wide voltage rang« 3.0V to 5.5V • High speed performance — 200ns Maximum access time at 3.0V • CMOS Technology for low power consumption — 8mA active current at 3.0V
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27LV128
200ns
100fiA
28-pin
32-pin
DS11025A-8
Microchip vk 1103
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SG3172P
Abstract: L165 equivalent L165 op amp lm675 amplifier uln3751 vk 739 lm675 servo motor ULN3751 L165 operational amplifier l165
Text: SG2172/3172 5ILID 3N ADVANCED DATA SHEET GENERAL 3 AMP POWER OP AMP LINEAR INTEG RATED C IR C U ITS DESCRIPTION FEATURES The S G 2 1 72/3172 is a pow e r m o nolithic operational a m plifier capable of operating w ith loads to 3A w ith a pow e r supply range to 18V. Therm al
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OCR Scan
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SG2172/3172
SG2172/3172
O-220
SG2172P
SG3172P
SG2172R
SG3172R
L165 equivalent
L165 op amp
lm675
amplifier uln3751
vk 739
lm675 servo motor
ULN3751
L165
operational amplifier l165
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Untitled
Abstract: No abstract text available
Text: For Im eiiaft M i m e , Coniaci Your Local Salesperson REF101 Precision VOLTAGE REFERENCE FEATURES APPLICATIONS • • • • • • PRECISION CALIBRATED VOLTAGE STANDARD +10.00V OUTPUT HIGH ACCURACY: ±0.005V VERY LOW DRIFT: 1ppm/°C max EXCELLENT STABILITY: 50ppm/1000hrs
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REF101
50ppm/1000hrs
REF101
10kHz
300pF
0D255Ã
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Untitled
Abstract: No abstract text available
Text: TOSHIBA T H M Y 2 5 N 1 1B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY25N11B is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM808BFT DRAMs and an unbuffer on a printed circuit board.
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1B70f75f80
THMY25N11B
432-word
64-bit
TC59SM808BFT
64-bit
THMY25N11B)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY25E11B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY25E11B is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM808BFT DRAMs and an unbuffer on a printed circuit board.
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THMY25E11B70f75f80
THMY25E11B
432-word
72-bit
TC59SM808BFT
72-bit
THMY25E11B)
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Untitled
Abstract: No abstract text available
Text: TO SH IBA THMY12E11B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY12E11B is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 5 TC59SM816BFT DRAMs and an unbuffer on a printed circuit board.
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THMY12E11B70f75f80
THMY12E11B
216-word
72-bit
TC59SM816BFT
64-BIT
72-bit
THMY12E11B)
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SH IBA THMY12N11B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY12N11B is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM816BFT DRAMs and an unbuffer on a printed circuit board.
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THMY12N11B70f75f80
THMY12N11B
216-word
64-bit
TC59SM816BFT
64-bit
THMY12N11B)
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PDF
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THMY6440A1AEG10
Abstract: M8A010 D036
Text: T O S H IB A TH M Y 6440A 1A EG -10,-12A,-12 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 4,194,304 W O R D S x 64 BITS SY N CH RO N O U S D R A M M O D U LE DESCRIPTION The THMY6440A1AEG is a 4,194,304 words by 64 bits Synchronous DRAM module which assembled
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THMY6440A1AEG
TC59S1608AFT
312mW
257mW
981mW
THMY6440A1AEG-10
THMY6440A1AEG
54MIN.
THMY6440A1AEG10
M8A010
D036
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TC59SM808BFT
Abstract: THMY25E11B70 49BH
Text: T O S H IB A THMY25E11B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY25E11B is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM808BFT DRAMs and an unbuffer on a printed circuit board.
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THMY25E11B70
432-WORD
72-BIT
THMY25E11B
TC59SM808BFT
72-bit
49BH
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PDF
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S9157
Abstract: No abstract text available
Text: TOSH IBA THMY7232G1EG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS D RAM MODULE DESCRIPTION The THMY7232G1EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM708FT DRAMs and an unbuffer on a printed circuit board.
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THMY7232G1EG-80
432-WORD
72-BIT
THMY7232G1EG
TC59SM708FT
72-bit
pimimnmiiiimimniiiriTTniimTi84Q
S9157
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THMY25N11C70
Abstract: 45 M 7.5 B
Text: T O S H IB A TH M Y25N 11C70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY25N11C is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM808CFT DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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THMY25N11C70
432-WORD
64-BIT
THMY25N11C
TC59SM808CFT
64-bit
45 M 7.5 B
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TC59SM808BFT
Abstract: THMY25E11B70
Text: T O S H IB A THMY25E11B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY25E11B is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM808BFT DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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THMY25E11B70
432-WORD
72-BIT
THMY25E11B
TC59SM808BFT
72-bit
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45 M 7.5 B
Abstract: TC59SM808BFT THMY25N11B70
Text: TO SH IBA THMY25N11B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY25N11B is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM808BFT DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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THMY25N11B70
432-WORD
64-BIT
THMY25N11B
TC59SM808BFT
64-bit
45 M 7.5 B
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