B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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S-41135
Abstract: No abstract text available
Text: Tape Information Vishay Siliconix TO-252 DPAK REVERSE LEAD (T4 METHOD) See Note 1 See Note 4 7.5 " 0.1 See Note 4 16 typ Section A−A Direction of Flow Marking On Heatsink Upward Package Orientation NOTES: 1. 10 sprocket hole pitch cumulative tolerance "0.2.
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O-252
S-41135--Rev.
19-Jul-04
90-2369-x
16-Ju1-04
S-41135
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Untitled
Abstract: No abstract text available
Text: Tape Information Vishay Siliconix TO-251 DPAK SHORT LEAD (T4 METHOD) See Note 1 See Note 4 7.5 " 0.1 See Note 4 16 typ Marking On Plastic Upward Direction of Flow Section A−A Package Orientation NOTES: 1. 10 sprocket hole pitch cumulative tolerance "0.2.
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O-251
S-41135--Rev.
19-Jul-04
90-2369-x
16-Jul-04
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SI5435BDC
Abstract: Si5435BDC-T1
Text: Si5435BDC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.045 @ VGS = −10 V −5.9 0.080 @ VGS = −4.5 V −4.4 D TrenchFETr Power MOSFETS 1206-8 ChipFETr S 1 D D G D D D D G S Marking Code
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Si5435BDC
Si5435BDC-T1--E3
18-Jul-08
Si5435BDC-T1
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Si5435BDC-T1
Abstract: SI5435BDC
Text: Si5435BDC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.045 @ VGS = −10 V −5.9 0.080 @ VGS = −4.5 V −4.4 D TrenchFETr Power MOSFETS 1206-8 ChipFETr S 1 D D G D D D D G S Marking Code
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Si5435BDC
Si5435BDC-T1--E3
08-Apr-05
Si5435BDC-T1
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2369
Abstract: marking T4
Text: Tape Information Vishay Siliconix TO-252 DPAK (T4 METHOD) See Note 1 See Note 4 7.5 " 0.1 See Note 4 16 typ Section A−A Direction of Flow Marking On Plastic Upward Package Orientation NOTES: 1. 10 sprocket hole pitch cumulative tolerance "0.2. 2. Camber not to exceed 1 mm in 100 mm.
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O-252
S-41135--Rev.
19-Jul-04
90-2369-x
16-Ju1-04
2369
marking T4
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Untitled
Abstract: No abstract text available
Text: Si5933DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −3.6 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 S1 S2 1206-8 ChipFETr 1 S1 D1 G1 G1 D1 G2 S2 D2 Marking Code
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Si5933DC
Si5933DC-T1
Si5933DC-T1--E3
S-40932--Rev.
17-May-04
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PDF
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SI5435BDC
Abstract: No abstract text available
Text: Si5435BDC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.045 @ VGS = −10 V −5.9 0.080 @ VGS = −4.5 V −4.4 D TrenchFETr Power MOSFETS 1206-8 ChipFETr S 1 D D G D D D D G S Marking Code
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Si5435BDC
Si5435BDC-T1--E3
S-41887--Rev.
18-Oct-04
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PDF
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250KL
Abstract: 40244 BS250KL TP0610KL TO-92-18RM S402 0610K
Text: TP0610KL/BS250KL Vishay Siliconix New Product P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) 6 @ VGS = −10 V −60 60 10 @ VGS = −4.5 V ID (A) 1 2 D 3 “S” TP 0610KL xxyy Device Marking Front View G 2
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TP0610KL/BS250KL
0610KL
TP0610KL-TR1
O-92-18RM
O-226AA
08-Apr-05
250KL
40244
BS250KL
TP0610KL
TO-92-18RM
S402
0610K
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250KL
Abstract: 40244
Text: TP0610KL/BS250KL Vishay Siliconix New Product P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) 6 @ VGS = −10 V −60 60 10 @ VGS = −4.5 V ID (A) 1 2 D 3 “S” TP 0610KL xxyy Device Marking Front View G 2
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TP0610KL/BS250KL
0610KL
TP0610KL-TR1
O-92-18RM
O-226AA
18-Jul-08
250KL
40244
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40244
Abstract: 250KL bs250kL BS250KL-TR1 BS250KLTR1
Text: TP0610KL/BS250KL Vishay Siliconix New Product P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) 6 @ VGS = −10 V −60 60 10 @ VGS = −4.5 V ID (A) 1 2 D 3 “S” TP 0610KL xxyy Device Marking Front View G 2
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TP0610KL/BS250KL
0610KL
TP0610KL-TR1
O-92-18RM
O-226AA
S-40244--Rev.
16-Feb-04
40244
250KL
bs250kL
BS250KL-TR1
BS250KLTR1
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Si2303DS
Abstract: A3 MARKING CODE
Text: Si2303DS Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.240 @ VGS = –10 V –1.7 0.460 @ VGS = –4.5 V –1.3 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (A3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2303DS
O-236
OT-23)
S-49557--Rev.
27-Apr-98
A3 MARKING CODE
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Untitled
Abstract: No abstract text available
Text: Si2303DS Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.240 @ VGS = –10 V –1.7 0.460 @ VGS = –4.5 V –1.3 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (A3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2303DS
O-236
OT-23)
08-Apr-05
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Si5404BDC
Abstract: No abstract text available
Text: Si5404BDC New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 7.5 0.039 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET Qg (Typ) 63 6.3 1206-8 ChipFETr D 1 D D D D G D D G S Marking Code
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Si5404BDC
Si5404BDC-T1--E3
08-Apr-05
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PDF
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Si5404BDC
Abstract: No abstract text available
Text: Si5404BDC New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 7.5 0.039 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET Qg (Typ) 63 6.3 1206-8 ChipFETr D 1 D D D D G D D G S Marking Code
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Si5404BDC
Si5404BDC-T1--E3
18-Jul-08
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PDF
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marking code vishay SILICONIX sot-23
Abstract: No abstract text available
Text: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (Ω) ID (A) 0.060 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2302ADS
O-236
OT-23)
Si2302ADS-T1
Si2302DS
08-Apr-05
marking code vishay SILICONIX sot-23
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Si1304DL
Abstract: Si1304DL-T1
Text: Si1304DL Vishay Siliconix N-Channel 25-V D-S MOSFET PRODUCT SUMMARY VDS (V) 25 rDS(on) (W) ID (A) 0.350 @ VGS = 4.5 V 0.75 0.450 @ VGS = 2.5 V 0.66 Qg (Typ) 13 1.3 SOT-323 SC-70 (3-LEADS) G 1 3 S D KB XX YY Marking Code Lot Traceability and Date Code 2 Part # Code
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Si1304DL
OT-323
SC-70
Si1304DL-T1
08-Apr-05
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A96V
Abstract: SI2328DS-T1-E3 Si2328DS
Text: Si2328DS Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 D 100% Rg Tested TO-236 (SOT-23) G 1 3 S D 2 Top View Si2328DS (D8)* *Marking Code Ordering Information: Si2328DS-T1 Si2328DS-T1—E3 (Lead (Pb)-Free)
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Si2328DS
O-236
OT-23)
Si2328DS-T1
Si2328DS-T1--E3
08-Apr-05
A96V
SI2328DS-T1-E3
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Si5402BDC
Abstract: No abstract text available
Text: Si5402BDC New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 6.7 0.042 @ VGS = 4.5 V 6.1 D 1206-8 ChipFETr 1 D D D D D D G G S Marking Code AD XXX Lot Traceability
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Si5402BDC
Si5402BDC-T1--E3
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: Tape Information Vishay Siliconix TO-251 DPAK SHORT LEAD (T1 METHOD) T 4.0 G J See Note 1 See Note 4 E R D See Note 4 16.0 B A 12.0 See Note 1 A M Marking On Plastic Upward K Section A-A Direction of Flow Package Orientation NOTES: 1. 10 sprocket hole pitch cumulative tolerance 0.2.
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O-251
S-41165--Rev.
02-Aug-04
01-Sep-04
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Si1304DL
Abstract: Si1304DL-T1
Text: Si1304DL Vishay Siliconix N-Channel 25-V D-S MOSFET PRODUCT SUMMARY VDS (V) 25 rDS(on) (W) ID (A) 0.350 @ VGS = 4.5 V 0.75 0.450 @ VGS = 2.5 V 0.66 Qg (Typ) 13 1.3 SOT-323 SC-70 (3-LEADS) G 1 3 S D KB XX YY Marking Code Lot Traceability and Date Code 2 Part # Code
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Si1304DL
OT-323
SC-70
Si1304DL-T1
18-Jul-08
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PDF
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Si5404BDC-T1-E3
Abstract: SI5404BDC
Text: Si5404BDC New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 7.5 0.039 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET Qg (Typ) 63 6.3 1206-8 ChipFETr D 1 D D D D G D D G S Marking Code
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Si5404BDC
Si5404BDC-T1--E3
S-41826--Rev.
11-Oct-04
Si5404BDC-T1-E3
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PDF
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1206-8
Abstract: Si5402BDC
Text: Si5402BDC New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 6.7 0.042 @ VGS = 4.5 V 6.1 D 1206-8 ChipFETr 1 D D D D D D G G S Marking Code AD XXX Lot Traceability
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Si5402BDC
Si5402BDC-T1--E3
08-Apr-05
1206-8
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