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    Untitled

    Abstract: No abstract text available
    Text: V30M120CxM3, VI30M120CxM3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V30M120CxM3, VI30M120CxM3 O-220AB O-262AA 22-B106 AEC-Q101 V30M120C VI30M120C 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: V30M120CxM3, VI30M120CxM3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V30M120CxM3, VI30M120CxM3 O-220AB O-262AA 22-B106 AEC-Q101 V30M120C VI30M120C 2002/95/EC. 2002/95/EC