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    VI-73 DIODE POWER Search Results

    VI-73 DIODE POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    VI-73 DIODE POWER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CD05TDDxxxx-Series DC-DC POWER MODULE 5~6W SINGLE & DUAL OUTPUTS 4:1 Input Range I/O Isolation Input Pi Filter Short Circuit Protection SINGLE OUTPUT MODELS Part Number Input Voltage Output Wattage Output Voltage Output Current Efficiency minimum CD05TDD03S4


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    PDF CD05TDDxxxx-Series CD05TDD03S4 1500mA CD05TDD05S4 1000mA CD05TDD12S4 12VDC 500mA CD05TDD15S4 15VDC

    sod343

    Abstract: diode V6 96 Lambda Semiconductors D400 transistor BAR63 BAR63-03W BAR80 BCR400 BCR400W D400
    Text: Application Note No. 025 Discrete & RF Semiconductors 1400-1600 MHz PIN-Diode Transmit-Receive Switch This application note describes a non-mechanical transmit-receive switch for the PDC 1500 mobile telephone system. Advantages: • • • • • • no power consumption in receive state


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    PDF 1600MHz: sod343 diode V6 96 Lambda Semiconductors D400 transistor BAR63 BAR63-03W BAR80 BCR400 BCR400W D400

    73b51

    Abstract: 5962-9311501MXA 7447B SCAN18245TSSC C1996 SCAN18245T SCAN18245TFMQB SCAN18245TSSCX A2279 DIODE B36 smd
    Text: SCAN18245T Non-Inverting Transceiver with TRI-STATE Outputs General Description Features The SCAN18245T is a high speed low-power bidirectional line driver featuring separate data inputs organized into dual 9-bit bytes with byte-oriented output enable and direction


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    PDF SCAN18245T SCAN18245T 73b51 5962-9311501MXA 7447B SCAN18245TSSC C1996 SCAN18245TFMQB SCAN18245TSSCX A2279 DIODE B36 smd

    D400 transistor

    Abstract: sod343 transistor D400 microwave antenna 1500 MHz Schaffer transistors D400 AN025 D400R TR400
    Text: Application Note No. 025 Discrete & RF Semiconductors 1400-1600 MHz PIN-Diode Transmit-Receive Switch This application note describes a non-mechanical transmit-receive switch for the PDC 1500 mobile telephone system. Advantages: • • • • • • no power consumption in receive state


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    PDF 1600MHz: D400 transistor sod343 transistor D400 microwave antenna 1500 MHz Schaffer transistors D400 AN025 D400R TR400

    FNP850-12

    Abstract: HZZ02002SW HZZ01222-G HZZ02002G resistor in psu
    Text: FNR-5-12G AC-DC Power Shelf Preliminary Data Sheet 4250 Watts, 12VDC Features • Standard configurations are RoHS compliant for all six substances • Wide-input voltage range of 85-264 VAC • Simple installation and operation • Auto-select power limits 1


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    PDF FNR-5-12G 12VDC HZZ02002G HZZ02002SW FNP850-12 HZZ01222-G resistor in psu

    LAW005A

    Abstract: LAW005B LAW005BK LAW005C LAW005CL LAW005F
    Text: Data Sheet June 2001 LAW005-Series Power Modules; dc-dc Converters: 36 Vdc to 75 Vdc Input; 5 W Features The LAW005-Series Power Modules use advanced, surfacemount technology and deliver high-quality, compact, dc-dc conversion at an economical price. • Small footprint: 32 mm x 20 mm 1.25 in. x 0.8 in.


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    PDF LAW005-Series IEC60950) ADS01-044EPS DS99-137EPS DS95-176EPS) LAW005A LAW005B LAW005BK LAW005C LAW005CL LAW005F

    LAW005F

    Abstract: LAW005CL LAW005A LAW005B LAW005BK LAW005C
    Text: Data Sheet April 2008 LAW005-Series Power Modules; dc-dc Converters: 36 Vdc to 75 Vdc Input; 5 W Features n Small footprint: 32 mm x 20 mm 1.25 in. x 0.8 in. n Low profile: 10.7 mm (0.42 in.) n Wide input voltage range: 36 Vdc to 75 Vdc n Input-to-output isolation: 1500 Vdc


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    PDF LAW005-Series ADS01-045EPS ADS01-044EPS) LAW005F LAW005CL LAW005A LAW005B LAW005BK LAW005C

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet April 2008 LAW005-Series Power Modules; dc-dc Converters: 36 Vdc to 75 Vdc Input; 5 W Features n Small footprint: 32 mm x 20 mm 1.25 in. x 0.8 in. n Low profile: 10.7 mm (0.42 in.) n Wide input voltage range: 36 Vdc to 75 Vdc n Input-to-output isolation: 1500 Vdc


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    PDF LAW005-Series ADS01-045EPS ADS01-044EPS)

    Untitled

    Abstract: No abstract text available
    Text: Yuan Dean Scientific CO.,LTD GA007 SERIES 7Watt, Single & Dual Output ,AC/DC Power Module Converter FEATURES: G A 007 - S 03 ●Universal Input 90~264VAC ●High Efficiency Up To 82% ●Protection: Short Circuit /Overload/Over Voltage ●Fully Encapsulated Plastic Case


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    PDF GA007 264VAC GA007-S03 GA007-S05 GA007-S12 GA007-S15 GA007-S24 GA007-S48 GA007-D05 GA007-Dilter

    DIODE W44

    Abstract: No abstract text available
    Text: Yuan Dean Scientific CO.,LTD GA010 SERIES 10Watt, Single & Dual Output ,AC/DC Power Module Converter FEATURES: G A 010 - S 03 ●Universal Input 90~264VAC ●High Efficiency Up To 82% ●Protection: Short Circuit /Overload/Over Voltage ●Fully Encapsulated Plastic Case


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    PDF GA010 10Watt, 264VAC GA010-S03 GA010-S05 GA010-S12 GA010-S15 GA010-S24 GA010-S48 DIODE W44

    BUZ73

    Abstract: SD2822 7a2 diode diode 935 lg LG 932
    Text: SIEMENS BUZ 73 BUZ 73 A SIPMOS Power MOS Transistors VDS = 200 V /q = 7 .0 /5 .5 A ^os on ~ 0 .4 /0 .6 Q • N channel • Enhancem ent mode • A valanche-proof • Package: TO -220 A B 1) TVpe Ordering code BUZ 73 C 6 7 0 7 8 -S 1 31 7-A2 BUZ 7 3 A C 6 70 78-S 1 31 7-A 3


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    PDF 15tfic BUZ73 SD2822 7a2 diode diode 935 lg LG 932

    2Sk398

    Abstract: 2SJ112
    Text: HITACHI/-COPTOELECTRONICS} l^ r e r S Y O b "73 DËJ 4 ^ 2 0 5 73C 1 0 0 38 H I T ÆU f f T / O H I U h L h C I H O N 1 T J S T 001D03Ö 0 D 2SK398— S IL IC O N N -C H A N N E L M O S FET HIGH SPEED POWER SWITCHING. HIGH FREQUENCY POWER AMPLIFIER C o m p le m e n ta ry p a ir w ith 2SJ112


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    PDF 001D03Ö 2SK398-- 2SJ112 2SK398: 2Sk398 2SJ112

    2SJ102

    Abstract: 2sk346 hitachi 2SK345 2SK346 hitachi 2sk346
    Text: HITACHI/{0PT0ELECTR0NICS> 7pVgW20 5 H i I ÄUHI 73 OPTOELECTRONICS / DE~j44TbEDS -y3 C 10017 . DOIGOI? T ’—39~a f D 2SK345,2SK346-SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING. LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ101, 2SJ102


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    PDF j44TbEDS 7pVgW20 2SK345 2SK346SILICON 2SJ101, 2SJ102 ------------------2SK345, 2SK346 2SJ102 2sk346 hitachi 2SK346 hitachi 2sk346

    COSMO,3041

    Abstract: A076 ic EN60747-5-2 KMOC3041
    Text: cosmo KMOC3Q41 High Reliability Photocoupler UL 1577 File NO.E169586 VDE EN60747-5-2 / EN60950 / EN60065 (File No.40009235) For 115/240 Vac (rms) Application: Outside Dimension:llnit (mm) 1. Solenoid/Valve Controls. 2. Lighting Controls. cosmo 3041 3. Static Power Switches.


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    PDF KMOC3041 E169586) EN60747-5-2 EN60950 EN60065 COSMO,3041 A076 ic KMOC3041

    2SK513

    Abstract: 10091 FET 2SK513 Hitachi Scans-001
    Text: -4 4 9 B 2 U S 'HI IAUH1 / UP i U h L h C I R U N 1O S 7 73C 1 00 89 2SK513 0 7 ~ -3 f-/ / 3>E J LiMcìtiEDS O D I O O S 11! S S ILIC O N N -C H A N N E L M O S FET HIGH SPEED POWER SWITCHING • FEATURES ' • High Breakdow n Voltage. • • High Speed Sw itching.


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    PDF -2SK513 2SK513 10091 FET 2SK513 Hitachi Scans-001

    LCX08

    Abstract: LCX-08 74LCX08
    Text: fZ T ^7 # S C S -T H O M S O N I^D g^(o I[Li(gfi iDei 74LC X 08 LOW VOLTAGE CMOS QUAD 2 INPUT AND GATE WITH 5V TOLERANT INPUTS PRELIMINARY DATA . 5V TOLERANT INPUTS . HIGHSPEED. tpo = 5.5 ns (MAX.) at Vcc = 3V . POWER-DOWN PROTECTION ON INPUTS AND OUTPUTS


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    PDF 74LCX08M 74LCX08T 10MHz 74LCX08 500i2 LCX08 LCX-08 74LCX08

    Untitled

    Abstract: No abstract text available
    Text: n ix Y S VUM 33-05 Power MOSFET Stage for Boost Converters I d 25 V Ds s R DS on Module for Power Factor Correction V RRM (Diode) V DSS V V 600 500 5 Type • VUM 33-05N v DSS VDGR VGS TVJ = 25°C to 150°C TVJ = 25°C to 150°C; RGS = 10 kfì Continuous


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    PDF 33-05N

    x1rv

    Abstract: SGSP151 SGSP252 sgsp251 P252 C SGSP351 FT04c
    Text: S G S-THOMSON 07E D | 712^237 001703 1 3 73C 17 3 28 o 7 7 3 *1 -0 7 S A L V N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.


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    PDF SGSPI51/P152 SGSP251/P252 SGSP351/P352 OT-82 O-220 SGSP151 SGSP251 SGSP351 SGSP152 SGSP252 x1rv P252 C FT04c

    thyristor aeg

    Abstract: aeg powerblock tt aeg powerblock tt 32 n thyristor AEG t 10 n 600 aeg thyristor aeg powerblock td aeg tt 18 n 1200 aeg tt 46 n 1200 AEG DD 65 N 1200 K AEG DD 31 n 1200
    Text: A E G CORP 17E D • GOa'iMSb 000=1313 4 Powerblocks für netzgeführte Stromrichter Power modules for line commutated converters Modules surmoulés pour applications secteur é zté -o l I - - « r- a 3 TT.N - Vollgesteuerte Kompaktbaustelne/Fully controlled power modules/Modules surmoulés à 2 thyristors


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    PDF DT18N 75VDRM 00V/ns thyristor aeg aeg powerblock tt aeg powerblock tt 32 n thyristor AEG t 10 n 600 aeg thyristor aeg powerblock td aeg tt 18 n 1200 aeg tt 46 n 1200 AEG DD 65 N 1200 K AEG DD 31 n 1200

    C25P03QL

    Abstract: C25P02QL bt1512
    Text: SCHOTTKY BARRIER DIODE C25P02QL C25P03QL 2 7 .7 A /2 0 ~ 3 0 V S.3{.209 4.7U85I FEATURES » Similar to TO-247AC {TO-3P) Case ° Dual Diodes - Cathode Common ° Extremely Low Forward Voltage Drop ° Low Power Loss, High Efficiency 2.2C087UJ 3.2 .126)080031) MAX


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    PDF C25P02QL C25P03QL O-247AC 100kHz 00020BM C25P03QL bt1512

    AD96685

    Abstract: AD96687 T735 T-73-5 AD96687P
    Text: A N AL OG DE VI CE S INC ANALOG DEVICES 51E D • GfllbflGG GÜBb^bfl OS^ ■ ANA -r 73-53 Ultrafast Comparators AD96685/AD96687 □ FEATURES Fast: 2.5ns Propagation Delay Low Power: 118mW per Comparator Packages: DIP, TCMOO, SOIC, PLCC Power Supplies: +5V, -5 .2 V


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    PDF AD96685/AD96687 118mW O-100, MIL-STD-883 AD96685 AD96687 AD96685/87 AD96685/AD96687â T735 T-73-5 AD96687P

    2SJ102

    Abstract: K346 K3465 2SK345 2SJ101 2SK346 K346 fet
    Text: H IT A C H I ! /-co PT O E L E C T R O N I C S } 7 3 D — -^ W 2 T T 5 ^ m rra U H I / OP'IO LLhCTRUNlUü; e 73C J ^ H L E D S m 10017 a D 2SK345,2SK346 S ILIC O N N -C H A N N E L M O S FET HIGH SPEED POWER SW ITCHING. LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ101, 2SJ102


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    PDF 2SJ101, 2SJ102 2SK345 2SK346 44Tfc DQ1D011 -2SK345, 2SK346 2SJ102 K346 K3465 2SJ101 K346 fet

    sgsp257

    Abstract: GSP-35 P2-58 P357 SGSP258
    Text: S G S-THOnSON 07E J> | 7cìacìS37 0017074 0 I ^ -V. , 73e 173 71 D SGSP257/P258^ r tf I h .SGSP^ 7 /P 3 5 8 J N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field


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    PDF SGSP257/P258^ 0V/60V OT-82 SGSP257 SGSP357 SGSP258 SGSP358 257/P SGSP357/P358 D--09 GSP-35 P2-58 P357

    Untitled

    Abstract: No abstract text available
    Text: SA MSUNG SE MI C O N D U C T OR INC OE KS54AHCT -f/J KS74AHCT l u d I | 7 ^ 4 1 4 5 0005^32 ñ | Triplé 3-Input NAND Gates FEATURES DESCRIPTION • Function, pin-out, speed end drive compatibility with 54/74ALS logic family • Low power consumption characteristic of CMOS


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    PDF KS54AHCT KS74AHCT 54/74ALS KS74AHCT: 300-mil 7Tb414S 90-XO 14-Pin