74406
Abstract: No abstract text available
Text: 35 /,0,1$5< '$7$ 6+(7 =( ($785(5,&+ =3/86 21(7,0( 352*5$00$%/( 0,&52&21752//(5 )($785(6 3DUW 1XPEHU =( 41/ $[VGU 4#/ $[VGU 5RGGF /*\ *HQHUDO3XUSRVH ± 0LFURFRQWUROOHU &RUH )HDWXUHV $OO ,QVWUXFWLRQV ([HFXWH LQ µV ,QVWUXFWLRQ &\FOH #
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closed caption 708
Abstract: No abstract text available
Text: < +2. < 6GNGXKUKQP %QPVTQNNGT YKVJ 1P 5ETGGP &KURNC[ 2TQFWEV $NQEM &KCITCO GPGTCN &GUETKRVKQP - $[VGU 41/ < %QTG 4#/ #&% 15& 29/ +% +1 2QTVU 1P 5ETGGP &KURNC[ 15& GCVWTGU Displays of up to 10 Rows by 24 Columns with 512 Characters
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Z90255
Z90251
Z90255
closed caption 708
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P46 transistor
Abstract: P44 transistor P47 transistor
Text: <& .1981.6# ' < 162 /+%41%10641.'4 9+6* #&% 2$+44 2TQFWEV $NQEM &KCITCO -G[ GCVWTGU • 32K bytes of OTP EPROM • 256 bytes of executable RAM • 8-bit sigma delta A/D converter with external voltage references (not available in the 28-pin configuration)
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28-pin
40/44-pin
FC56CFCTYÂ
PRIVC89
577UR57Y
89VC79S
T97BHIFIAY
89S7RC698
CHT9FF97TU5F
P46 transistor
P44 transistor
P47 transistor
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Untitled
Abstract: No abstract text available
Text: Angel Debug Protocol Document number: ARM DUI 0052C Issued: Sept 1999 Copyright ARM Ltd. 1997-1999 Open Access Proprietary Notice Copyright © 1997, 1998, 1999 ARM Ltd. ARM and the ARM Powered logo are trademarks of ARM Ltd. Neither the whole nor any part of the information contained in, or the product described in, this document may be adapted or
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0052C
Win32
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Untitled
Abstract: No abstract text available
Text: %#46'<+#0 6*' %#46'<+#0 '/$'&&'& $+6 4+5%&52 241%'5514 2$ 24'.+/+0#4; 241&7%6 $4+' %#46'<+#0 $.1%- &+# 4#/ • Conditional Move instructions to eliminate spurious branches -$ +PUVT %CEJG -$ &CVC %CEJG • 64→32 Funnel shifter $KV 4+5%&52 %QTG
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16-KB
32-bit
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Untitled
Abstract: No abstract text available
Text: %#46'<+#0 6*' %#46'<+#0 '/$'&&'& $+6 &52 241%'5514 2$&52 24'.+/+0#4; 241&7%6 $4+' %#46'<+#0 $.1%- &+# 4#/ • Conditional Move instructions to eliminate spurious branches -$ +PUVT %CEJG -$ &CVC %CEJG • 64→32 Funnel shifter $KV 4+5%&52 %QTG
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strongArm
Abstract: No abstract text available
Text: Angel Debug Protocol Messages Document number: ARM DUI 0053D Issued: Sept 1999 Copyright ARM Ltd 1997-1999 Open Access Proprietary Notice Copyright © 1997, 1998, 1999 ARM Ltd. ARM and the ARM Powered logo are trademarks of ARM Ltd. Neither the whole nor any part of the information contained in, or the product described in, this document may be adapted or
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0053D
strongArm
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73E05
Abstract: 73E-05 abb inverter protection single phase igbt based inverter 200 amps circuit 97E-05
Text: Application Note Paralleling of IGBT modules Paralleling of modules or paralleling of inverters becomes necessary, if a desired inverter rating or output current can not be achieved with a single IGBT module as switch. From an economic point of view paralleling of modules
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0600G650100
73E05
73E-05
abb inverter protection
single phase igbt based inverter 200 amps circuit
97E-05
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mig30j103h
Abstract: No abstract text available
Text: MIG30J103H TOSHIBA TOSHIBA INTELLIGENT GTR MODULE M i fi ^ n SILICON N CHANNEL IGBT 1 1 n ^ h HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Intelligent GTR Module that include IGBT drive circuits, overcurrent, undervoltage lockout, and overtemperature protection.
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MIG30J103H
25/iS
2-99E1A
12-VlNX
14-Vin
X100A)
mig30j103h
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Untitled
Abstract: No abstract text available
Text: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK1875 U nit in mm H IG H FREQ U EN CY A M P LIF IE R A PP LIC A T IO N S . AM H IG H FREQUENCY A M P LIF IE R A PP LIC A T IO N S . 1.25 ±0. 1 A U D IO FREQUENCY A M P LIF IE R A PP LIC A T IO N S .
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2SK1875
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mst 702 lf
Abstract: BUK995-60A
Text: Philips Com ponents Data sheet Preliminary specif ication status date of issue March 1991 90 BUK995-60A PowerMOS transistor Logic Level SensorFET SbE ]> P H I L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power
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OT263
BUK995-60A
711QfiEb
004M7LS
BUK995-60A
mst 702 lf
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Untitled
Abstract: No abstract text available
Text: The OET series provides a selection of ultra high efficiency, high density triple output isolated DC-DC converters, with up to 25W of output power. OET units offer either +3.3V, or +5V as a main output, and ±12V auxiliary outputs. Remote shutdown is provided, and input pi
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2SK244
Abstract: 49842 2SK2441 25K24
Text: Ordering number: EN 4984A 2SK2441 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features •Low ON resistance. ■Ultrahigh-speed switching. • 2.5V drive. A bsolute M axim um R atings at Ta = 25°C Drain-to-Source Voltage V dss Gate-to-Source Voltage
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EN4984A
2SK2441
1000mm2
2SK244
49842
25K24
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74F3040
Abstract: No abstract text available
Text: Philip« Semiconductors-Signctics Document No. 853-0023 ECN No. 98639 Date of issue January 29, 1990 Status Product FAST 74F3040 30£2 Une Driver Dual 4-Input NAND 30Q Line Driver FAST Products TYPE TYPICAL PROPAGATION DELAY TYPICAL SUPPLY CURRENT TOTAL
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74F3040
74F3040
160mA
16-Pin
N74F3040N
N74F3040D
500ns
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LT 7247
Abstract: MIG30J103HB gtr driver TLP559 oti0
Text: TOSHIBA MIG30J103HB TOSHIBA INTEGENT GTR MODULE SILICON N CHANNEL IGBT MIG30J1 03HB HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Intelligent GTR Module th a t include IGBT drive circuits, overcurrent, undervoltage lockout, and overtemperature protection.
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MIG30J103HB
MIG30J1
2-99E1A
961001EAA2
LT 7247
MIG30J103HB
gtr driver
TLP559
oti0
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MIG30J103HB
Abstract: TLP559
Text: TOSHIBA M IG 3 0 J1 0 3 H B TOSHIBA INTEGENT POWER MODULE SILICON N CHANNEL IGBT MIG30J1 03HB HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Intelligent Power Module that include IGBT drive circuits, overcurrent, undervoltage lockout, and
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MIG30J103HB
MIG30J1
2-99E1A
961001EAA2
MIG30J103HB
TLP559
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P54/74PCT521
Abstract: No abstract text available
Text: P54/74FCT521 /A/B/C P54/74PCT521 /A/B/C ULTRA-HIGH SPEED CMOS 8-BIT IDENTITY COMPARATORS FEATURES • Function, Pinout, and Drive Compatible with the FCT and F Logic ■ Outputs Meet Levels Required for CMOS Static RAM Low Power Standby Mode ■ FCT-C speed at 4.5ns max. (Com'l)
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P54/74FCT521
P54/74PCT521
1819TU09
MIL-STD-883,
AE18194
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upd3574d
Abstract: CMOS-5 NEC
Text: INEC •i —'.I* .—ir*- D ATASH EET . . -»-V-' . MOS INTEGRATED CIRCU IT I b b i r o n d e vice ¿ ¿ P D 3 5 H 7 4 2 592-BIT CCD LINEAR IMAGE SENSOR The jjPD3SH74 it a 2 592-bit linear image sensor consisting of charge coupled devices CCDs , which convert light to voltage.
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592-BIT
jjPD3SH74
296-bit
uPD3574D
PD74HCU04C
P074HCU04C
35H74
b427525
CMOS-5 NEC
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MIG30J103H
Abstract: TLP559 TLP559 motor drive
Text: T O SH IB A MIG30J103H TOSHIBA INTELLIGENT PO W ER MODULE SILICON N CHANNEL IGBT MIG30J103H HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Intelligent Power Module th a t include IGBT drive circuits, overcurrent, undervoltage lockout, and
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MIG30J103H
2-99E1A
14-vlnz
961001EAA2
MIG30J103H
TLP559
TLP559 motor drive
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SCR 40 RIA 120
Abstract: No abstract text available
Text: International H>HRectifier s e r ie s b 2s r ia / b 25H2s SCR Power Modules 25A Features • ■ ■ ■ ■ ■ ■ ■ G lass passivated junctions for greater reliability Electrically isolated base plate 3 5 0 0 V RMS A vailable up to 1200 V RRM, V DRM
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25H2s
SCR 40 RIA 120
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Photocoupler Q 817
Abstract: 817 photocoupler PC 814 photocoupler mig20j103h
Text: T O S H IB A M IG 20 J10 3H MIG20J1 03H TO SH IBA INTELLIGENT GTR M O D U L E SILICON N C H A N N EL IGBT HIGH POW ER SW ITCHING APPLICATIONS M O T O R C ONTRO L APPLICATIONS • Intelligent GTR Module th at include IGBT drive circuits, overcurrent, undervoltage lockout, and
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MIG20J1
2-99E1A
Photocoupler Q 817
817 photocoupler
PC 814 photocoupler
mig20j103h
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0J103H
Abstract: No abstract text available
Text: TOSHIBA M IG 3 0J103 H TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL IGBT MI G30J 1 03H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • Intelligent Power Module that include IGBT drive circuits, overcurrent, undervoltage lockout, and
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0J103
2-99E1A
0J103H
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OM6214SS
Abstract: OM6215SS OM6216SS OM6217SS
Text: OM6214SS OM6216SS OM6215SS OM6217SS TWO POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE 100V Thru 500V, Dual High Current, N-Channel MOSFETs FEATURES • Two Isolated MOSFETs In A Hermetic Metal Package • Fast Switching, Low Drive Current • Ease of Paralleling For Added Power
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OM6214SS
OM6216SS
OM6215SS
OM6217SS
MIL-S-19500,
D001DÃ
OM6217SS
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EN3530
Abstract: VPA18 transistor c 2060
Text: [Ordering number: EN3530 FBET Hybrid IC SA0YO F VPA18 No. 3530 Video Pack, Video Output Amplifier for Ultrahigh-resolution CRT Displays i - OVERVIEW - / / PINOUT The VPA18 is a composite, single-channel, video output amplifier 1C for ultrahigh-resolution monochrome or
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EN3530
VPA18
VPA18
EN3530
transistor c 2060
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