VGT300039
Abstract: PT6045 VGT300022 PT6005
Text: V L S I TECHNOLOGY INC 47 E D T3flfl34? n o n a T T a V L S I Tech n o lo gy , in c . 3 VTI T -H Z -d -C R VGT350/VGT353 LIBRARY I.O-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.85-micron channel length, 1.0-micron gate length silicon gate CMOS technology
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T3flfl34?
VGT350/VGT353
85-micron
VGT350/353
VGT300039
PT6045
VGT300022
PT6005
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R/CHN 041 diode
Abstract: No abstract text available
Text: V L S I Te c h n o l o g y in c . VGT300 SERIES 1.0-MICRON GATE ARRAY SERIES FEATURES ^ s • Advanced f.O microij/idrawn silicon gate'technutbgy • Seven array sizes from 30,300 to 246,500 available gates • Continuous Gate architecture for maximum layout efficiency
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VGT300
R/CHN 041 diode
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VLSI Technology
Abstract: kt 714 schematic transistor modul trigger pt6005 vlsi design physical verification VGT300 "VLSI Technology Inc." PT6055 GAH 521 fabrimex
Text: V L S I T ec h n o lo g y , in c . VGT300 SERIES 1.0-MICRON GATE ARRAY SERIES FEATURES s • Advanced f.O microp/fdrawn silicon gate'techrrology • Seven array sizes from 30,300 to 246,500 available gates • Continuous Gate architecture for maximum layout efficiency
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VGT300
VLSI Technology
kt 714
schematic transistor modul trigger
pt6005
vlsi design physical verification
"VLSI Technology Inc."
PT6055
GAH 521
fabrimex
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transistor t6055
Abstract: C6052P T6055 VGT300077 NAND Micron PT6001 KT 829 PC6D00
Text: V L S I TECHNOLOGY INC 1ÍE I 13afl3M7 D0G3SÖ4 S V L S I T echnology , in c . VGT300 SERIES 1.0-MICRON GATE ARRAY SERIES FEATURES DESCRIPTION ADVANCED DESIGN TOOLS • Advanced 1.0 m icron drawn) silicon gate technology The VGT300 Series of high-performance gate arrays is fabricated on an
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13afl3M7
VGT300
transistor t6055
C6052P
T6055
VGT300077
NAND Micron
PT6001
KT 829
PC6D00
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V/VGT200017
Abstract: No abstract text available
Text: VLSI T ec h n o lo g y in c . GATE ARRAY PRODUCTS GATE ARRAY BASES FEATURES DESCRIPTION • High reliability - over 2000 V protection against Electrostatic Discharge ESD VLSI Technology’s VGT Series of high-performance and hlgh-density gate arrays utilize the Company’s
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