YTFP450
Abstract: SC651
Text: FIELD EFFECT TRANSISTOR YTFP450 SILICON N CHANNEL MOS TYPE tt-MOSH HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER AND HOTOR U nit in mm ORIVE APPLICATIONS, 159M A X . FEATURES: 0Z2±aZ A m • Low Drain-Source ON Resistance :
|
OCR Scan
|
PDF
|
YTFP450
VDS-10V,
00A/ps
YTFP450
SC651
|
YTFP451
Abstract: No abstract text available
Text: TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ir - YTFP451 MOSI INDUSTRIAL APPLICATIONS Unit in am HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 1&9MAX. 0aa±Q8 DRIVE APPLICATIONS. dl FEATURES:
|
OCR Scan
|
PDF
|
YTFP451
500nA
250uA
Ta-25
-55M50
VDS-25V,
ID-16A
VGS-10V
IDR-13A
YTFP451
|
YTF540
Abstract: No abstract text available
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOS h HIGH SPEED. HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR,DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 10 .3 MA X. • FEATURES: •Low Drain-Source ON Resistance : ROS(ON)= 0.07ß (Typ.)
|
OCR Scan
|
PDF
|
10/oe
VGS-10V,
00A//ts
YTF540
|
2sk1885
Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Text: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
|
OCR Scan
|
PDF
|
2SJ272
2SJ273
T0-220ML
2SJ274
2SK1904
2SK1905
60m/80m
2SK1906
2SJ275
2SJ276
2sk1885
2sj270
2SK1871
2SK1883
2sk2164
2SK2227
2SJ26
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA íDISCRETE/OPTOJ T i T D T 7 E S G 9097250 TOSHIBA DISCRETE/OP' tfoâtiïba. 99D 16876 D TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR - DDlbñVb Y T F 6 4 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (TT-hosh Y - s q - ' / } HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
|
OCR Scan
|
PDF
|
100nA
250uA
00A/us
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA D I S C R E T E / O P T O SCH725G DDlT^öa 3 « T O S H 4SE D TOSHIBA FIELD EFFECT TRANSISTOR YTFP450 SILICON N CHANNEL MOS TYPE (tt - MOSI) '-3*. INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR
|
OCR Scan
|
PDF
|
SCH725G
YTFP450
500nA
250uA
VDDi210V
|
Untitled
Abstract: No abstract text available
Text: dF TOSHIBA { D I SC RE TE /OPT O} 9097250 TOSHIBA DISCRETE/OPTO ^ /o ò h ìltt § T D T 7ES0 DülbflTD D TS^-ìj 99D 16870 T O SH IBA SEMICONDUCTOR F IE L D EFFEC T TR A N SISTO R Y T F 6 3 1 S IL IC O N TECHNICAL DATA N C H A N N EL.MOS T Y P E (T T -M O S I)
|
OCR Scan
|
PDF
|
500nA
250uA
00A/us
|
k2749
Abstract: 2SK2749 SC-65
Text: TOSHIBA 2SK2749 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2749 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 15.9 MAX. 03.2 ±0.2
|
OCR Scan
|
PDF
|
2SK2749
k2749
2SK2749
SC-65
|
transistor Sh 550
Abstract: 2SK1721
Text: 2SK1721 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt- M O SII 2 S K 1 7 21 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. TO-220FL DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • • • • Unit in mm 10.3M AX. Low Drain-Source ON Resistance : Rd S(ON) —2.50 (Typ.)
|
OCR Scan
|
PDF
|
2SK1721
O-220FL
961001EAA2'
transistor Sh 550
2SK1721
|
Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER bSE D • MflSSMSE 1^3 ■ INR Bulletin E27108 International S Rectifier IRFK4HC50,IRFK4JC50 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996. Electrically Isolated Base Plate.
|
OCR Scan
|
PDF
|
E27108
IRFK4HC50
IRFK4JC50
E78996.
|
ior e78996
Abstract: E78996 ior
Text: INTERNATIONAL RECTIFIER bSE » WÊ 4055452 DDlbBll T3T • INR Bulletin E27111 International ^ 1 Rectifier IRFK6H250,IRFK6J250 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996.
|
OCR Scan
|
PDF
|
E27111
IRFK6H250
IRFK6J250
E78996.
O-240
ior e78996
E78996 ior
|
APT40M80DN
Abstract: APT801R2DN mos die APT-106 APT5020DN APT5025DN APT601R3DN APT5540DN APT5023 co257
Text: ADVANCTD POUJFR TECHNOLOGY MT E D • QSSV'IQ'l 0000343 SOT APT POWER MOS IV COMMERCIAL AND CUSTOM DIE WAVR T - 2Æ -IS ' INTRODUCTION: The purpose of this APT Note is to describe the Power MOS IV™ Transistor Die available from Advanced Power Technology.
|
OCR Scan
|
PDF
|
APT-105
APT-106
APT-107
APT-108
APT40M80DN
APT801R2DN
mos die
APT-106
APT5020DN
APT5025DN
APT601R3DN
APT5540DN
APT5023
co257
|
MA7805
Abstract: ME214 OC740
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
|
OCR Scan
|
PDF
|
|
IRF 850 mosfet
Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
Text: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.
|
OCR Scan
|
PDF
|
SC-63
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
T0-220MF
lsDwATT220>
IRF 850 mosfet
Mini size of Discrete semiconductor elements
2SJ335
cp 035 sanyo
CP 022 ND
fa214
8ROM
2SK2637
marking 85m ok
2SJ382
|
|
|
ask2082
Abstract: 2SK2082-01 2sk2082
Text: J. S P E C I F I C A T I O N DEVICE NAME : TYPE NAME : Power M OSFET 2 S K 2 0 8 2- 0 1 SPEC. No. Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVEO Fuji Electric CcxJLtcL DRAWN CHECKED o z o Ï o //1 Y 0257-R-004a
|
OCR Scan
|
PDF
|
2SK2082-01
0257-R-004a
0257-R-003a
80//s
VGS-10V
0257-R-C
ask2082
2SK2082-01
2sk2082
|
2-10P1B
Abstract: 2SK2544
Text: TOSHIBA 2SK2544 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2544 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGURATOR APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm I* . • • • • Low Drain-Sorce ON Resistance : Rd S(ON)“ 0.9O (Typ.)
|
OCR Scan
|
PDF
|
2SK2544
2-10P1B
2SK2544
|
Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M A R C H 94_ FEATURES * 100 V olt VDS * RDS on>= 1 -5 0 * Spice m odel available ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VALUE UNIT V VDS 100 Continuous Drain Current a tT amtj=25°C
|
OCR Scan
|
PDF
|
0Q1Q354
001G35S
|
sm 41056
Abstract: 32N25E TIC 136 Transistor 25C312
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTW32N25E TMOS E-FET ' Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole M otorola Preferred Device TMOS POWER FET 32 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate
|
OCR Scan
|
PDF
|
|
14MQ
Abstract: IRFK4H150 IRFK4J150
Text: Bulletin E27104 International IxsrIR a tifie r 1RFK4H150,IRFK4J150 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996. Electrically isolated Base Plate. Easy Assembly into Eauipment
|
OCR Scan
|
PDF
|
E27104
IRFK4H150
IRFK4J150
E78996.
T0-240
14MQ
|
APC UPS es 500 CIRCUIT DIAGRAM
Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.
|
OCR Scan
|
PDF
|
ADE-408
50502C
APC UPS es 500 CIRCUIT DIAGRAM
sk 100 gale 065 tf
2SK1058 MOSFET APPLICATION NOTES
APC UPS CIRCUIT DIAGRAM es 725
General Instrument data book
2SK2264
ESI 252 impedance meter
transistor bf 175
PF0144
2SK212
|
14N50
Abstract: STW14N50 sd 431 transistor dq45c SGS-THOMSON 435 14N50F
Text: 7 ^ 2 3 7 Ü Ü M S 'iS l b ö T « S Ü T H Gl SGS-THOMSON i^OTi «S STH14N50/FI STW14N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH 14N50 S TH 14N50FI STW 14N50 . . • . ■ ■ V dss RDS on Id 500 V 500 V 500 V < 0.45 £2 < 0.45 £2 < 0.45 n
|
OCR Scan
|
PDF
|
14N50
14N50FI
14N50
STH14N50/FI
STW14N50
VGS-10V
STW14N50
sd 431 transistor
dq45c
SGS-THOMSON 435
14N50F
|
Untitled
Abstract: No abstract text available
Text: SAfiYO New Product Low On-Resistance Power MOSFETs Low on-resistance Power MOSFETs {J-MOS VDSS:12V/20V/30V Series S a n y o P o w e r MOSFETs TJ-MOS S e r i e s j m e e t t h e m a r k e t n e e d s o f l o w e r v o l t a g e d r i v e a n d m i n i a t u r i z e d s u r f a c e
|
OCR Scan
|
PDF
|
2V/20V/30V
l/420
MT950216TR
|
n 407 diode
Abstract: No abstract text available
Text: PRODUCT N-CHANNEL ENHANCEMENT MOS FET 1000V. 11 A , 1. 15 n SD F 1 I N 100 GAF c EATURE5 • RUGGED PACKAGE • H I - R E L CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS • LOW IR LOSSES • LOW THERMAL RESISTANCE
|
OCR Scan
|
PDF
|
IF-11A
di/dt-100A/
n 407 diode
|
LD50A
Abstract: No abstract text available
Text: i TOSHIBA FIELD EFFECT TRANSISTOR YTTM^A SILICON N CHANNEL MOS TYPE ir - YTFP152 MOSI HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in nm CHOPPER REGULATOR, DC_DC CONVERTER AND MOTOR 1&0MAX. 0Z.2ÍÜ2 V. DRIVE APPLICATION.
|
OCR Scan
|
PDF
|
YTFP152
0-06OE
250UA
Ta-25
250uA,
250uA
ID-20A
VGS-10V
ID-20A
LD50A
|