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Abstract: No abstract text available
Text: Product Group: Vishay Optoelectronics, Sensors / December 2014 Author: Andreas Puetz Tel: Andreas.Puetz@vishay.com E-mail: +49-7131-67-2662 New VEMD5010X01 and VEMD5110X01 Silicon PIN Photodiodes Deliver 7.5 mm2 Sensitive Area in Low-Profile Packages Product Benefits:
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VEMD5010X01
VEMD5110X01
AEC-Q101
VEMD5010X01)
VEMD5110X01)
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VFIR
Abstract: PIN photodiode 850nm PIN photodiode chip 850nm photodiode Fiber-optic fiber-optic photodiode for 850nm Fiber-optic PIN photodiode A/W 850nm SD150-14-006 VCSEL die bonding PIN photodiode chip 850nm
Text: SD150-14-006 16/32Mbps Si PIN Photodiode Chip The SD150-14-006 chip is a silicon pin photodiode that has been specifically developed for the price-sensitive OEM optical communication applications, including IrDA-compatible transceivers, fiber-optic LAN, VCSEL-based IR links, and instrumentation. Designed to be fully depleted at
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SD150-14-006
16/32Mbps
SD150-14-006
16Mbps
32Mbps
VFIR
PIN photodiode 850nm
PIN photodiode chip
850nm photodiode Fiber-optic
fiber-optic photodiode for 850nm
Fiber-optic PIN photodiode A/W 850nm
VCSEL die bonding
PIN photodiode chip 850nm
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near IR sensors with daylight filter
Abstract: No abstract text available
Text: Product Group: Vishay Optoelectronics, Sensors / September 2014 Author: Joerg Wedermann Tel: +49 7131 67 3027 E-mail: joerg.wedermann@vishay.com New VEMD6010X01 and VEMD6110X01 Silicon PIN Photodiodes The News: Vishay Intertechnology Automotive-Grade PIN Photodiodes in 1206
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VEMD6010X01
VEMD6110X01
VEMD6110X01
VEMD6010X01)
VEMD6110X01)
near IR sensors with daylight filter
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VTB8440B
Abstract: VTB8440 VTB8441B VTB process photodiodes VTB8441
Text: VTB Process Photodiodes VTB8440B, 8441B PACKAGE DIMENSIONS inch mm CASE 21F 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in recessed ceramic package. The package incorporates an infrared
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VTB8440B,
8441B
VTB8440B
VTB8440B
VTB8440
VTB8441B
VTB process photodiodes
VTB8441
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InGaAs Photodiode 1550nm
Abstract: Photodiode, 1550nm photodiode responsivity 1550nm 2 1310nm photodiode for 10Gbps 1310nm photodiode 1620nm
Text: FCI-InGaAs-25C 10Gbps InGaAs Photodiode APPLICATIONS FEATURES  High  High Speed Optical Communications  OC-192  Optical Networking  Optical Measurement Speed, 10 Gbps Data Rates Dark Current  Front Illuminated  High Responsivity, Typ. 0.95A/W
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FCI-InGaAs-25C
10Gbps
OC-192
1550nm
FCI-InGaAs-25C
100pA
1100nm
100mV/div
InGaAs Photodiode 1550nm
Photodiode, 1550nm
photodiode responsivity 1550nm 2
1310nm photodiode for 10Gbps
1310nm photodiode
1620nm
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R7600-M64
Abstract: S10362-11-100C circuit diagram of a laser lighter
Text: NEWS 02 2008 SOLID STATE PRODUCTS PAGE 9 New Si PIN photodiodes S10783 and S10784 SOLID STATE PRODUCTS Red LED for POF Data Communications PAGE 10 ELECTRON TUBE PRODUCTS 75W Xenon Lamp Series PAGE 28 SYSTEMS PRODUCTS Cooled CCD Camera ORCA-R2 PAGE 38 Highlights
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S10783
S10784
P2211
DE128228814
R7600-M64
S10362-11-100C
circuit diagram of a laser lighter
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GEO06314
Abstract: Q62702-P936
Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode With Very Short Switching Time SFH 216 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • Kurze Schaltzeit typ. 5 ns • Hermetisch dichte Metallbauform (TO-18)
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Q62702-P936
GEO06314
GEO06314
Q62702-P936
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GEOY6314
Abstract: Fotodiode tci 571 Q62702-P936
Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode With Very Short Switching Time SFH 216 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • Kurze Schaltzeit typ. 5 ns • Hermetisch dichte Metallbauform (TO-18)
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Q62702-P936
GEOY6314
GEOY6314
Fotodiode
tci 571
Q62702-P936
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foto sensor
Abstract: foto transistor tci 411 Q62702-P936 SFH216
Text: SFH 216 SFH 216 feo06314 Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features ● Speziell geeignet für Anwendungen im
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feo06314
foto sensor
foto transistor
tci 411
Q62702-P936
SFH216
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ZTX384
Abstract: BPW41D ultrasonic 4046 pll zpd200 low noise ir photodiode amplifier INTRODUCTION OF AUTOMATIC ROOM LIGHT CONTROL Design and construction Wave FM radio transmitter BPW41 IR DATA BPW41 circuit application 4046 self bias amplifier
Text: Application Note 3 Issue 2 November 1995 Infra-Red Remote Control and Data Transmission An Introduction to Photodiodes - Load Circuits and Applications David Bradbury Introduction The use of short range remote control and data transmission systems in both
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BPW41D
ZTX384
ultrasonic 4046 pll
zpd200
low noise ir photodiode amplifier
INTRODUCTION OF AUTOMATIC ROOM LIGHT CONTROL
Design and construction Wave FM radio transmitter
BPW41 IR DATA
BPW41 circuit application
4046 self bias amplifier
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CQY78
Abstract: CQY77 CQY78 IV CQY77A DIN5033 BPW33 germanium photodiode PIN phototransistor 600 nm solar cell transistor infrared photodiode germanium
Text: General IR and Photodetector Information Appnote 37 1. Detectors Radiation-sensitive Components Charge Carrier Generation in a Photodiode Figure 1 shows the basic design of a planar silicon photo-diode with an abrupt pn transition. Due to the differing carrier concentrations, a field region free of mobile carriers, the space charge
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BPW33)
CQY78
CQY77
CQY78 IV
CQY77A
DIN5033
BPW33
germanium photodiode PIN
phototransistor 600 nm
solar cell transistor infrared
photodiode germanium
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quad photodiode
Abstract: OP5925 OPR5911 very high area ir photodiode OPR5925 photodiode encoder
Text: Surface Mount Quad Photodiode OPR5911, OPR5925 Features: • • • • Surface mountable Closely matched responsivity High temperature operation Separate cathode connections OPR5925 Description: Each OPR5911 and OP5925 device is a four-element photodiode that is enclosed in a compact polyamide chip
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OPR5911,
OPR5925
OPR5925)
OPR5911
OP5925
characteristi30
OPR5911
quad photodiode
very high area ir photodiode
OPR5925
photodiode encoder
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Fotodiode
Abstract: GEOY6314 Q62702-P936
Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode With Very Short Switching Time SFH 216 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • Kurze Schaltzeit typ. 5 ns • Hermetisch dichte Metallbauform (TO-18)
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Q62702-P936
Fotodiode
GEOY6314
Q62702-P936
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2SC869
Abstract: No abstract text available
Text: MITSUBISHI SILICON AVALANCHE PHOTODIODES blE D • lflITS PD1XX5 SERIES ^ 4 ^ 0 2 ^ DDIMTGT 535 MITSUBISHI DISCRETE SC FOR OPTICAL COMMUNICATION AND RADAR SYSTEMS TYPE NAME FEATURES DESCRIPTION • High speed response (pulse rise tim e 750ps) PD1XX5 is a silicon avalanche photodiode (Si-APD)
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750ps)
400MHz)
2SC869
2SC869
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH 232 GERMANIUM PIN PHOTODIODE Package Dimensions in Inches mm Anode .570(14.5) .492(12.5) 149(3.8) .138(3.5) -X - •J57(4.0j .149 (3.8) *006 (.15) Max. ~ T 0.189(4.80) 0.179(4.55) 0.100 (2.54), _L .018 (0.45) .220(5.6) .208 (5.3) .086 (2.2) ~079 (2.0) /
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33L33L
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Untitled
Abstract: No abstract text available
Text: bGE D • ÛEBStiGS DD4h725 24b « S I E G 7 SIEMENS AKTIENGESELLSCHAF SIEMENS SFH 232 GERMANIUM PIN PHOTODIODE Package Dimensions in Inches mm Cathode 570(14 5) 492(12 5) 149 (3 8} 138 (3 5) _ u N»_ 0 100 (2541 1 157 (4 0j .149 (3 8) Max /¡fisi I 0 189(4
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DD4h725
004b72b
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Untitled
Abstract: No abstract text available
Text: bDE D • flEBSbOS D04b727 DIT « S I E G SIEMENS AKT IENGESELLSCHAF SIEMENS SFH 233 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings * Anode Marking: Projection at Package Bottom Operating and Storage Temperature Range T0P, T3Te Reverse Voltage (VR) Power Dissipation (PTO t )
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D04b727
1100ction
A23SbDS
0G4b72Ã
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APY12
Abstract: APY 12 Siemens photodiode visible light Germanium power K/HOP-1045
Text: SFH 231 SIEMENS GERMANIUM PIN PHOTODIODE Package Dimensions in Inches mm FEATURES Maximum Ratings * Anode Marking: Projection at Package Bottom • Usage: Visible Light and Near Infrared Range * High Spectral Sensitivity ■ High Reliability * Very Short Switching Time
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1300nm,
100nA)
APY12
APY 12
Siemens photodiode visible light
Germanium power
K/HOP-1045
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH 233 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings • Anode Marking: Projection at Package Bottom Operating and Storage Temperature Range T0P, Ts tg -4 0 “ to +80°C Reverse Voltage (VR) . 10 V
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0007fci40
--SFH233
aZ3b32b
0007fc
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germanium photodiode PIN
Abstract: pin photodiode 1550 sensitivity photodiode PIN 1300 sensitivity pin Photodiode 1300 nm Germanium power t2856
Text: SIEMENS SFH 232 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings * Anode Marking: Tab at Package Bottom Operating and Storage Temperature Range T0P, Tstg .-40" to +80“C Reverse Voltage (VR) .15V
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FID08T13TX
Abstract: 08T13TX photodiode 850nm PIN photodiode 10 nm
Text: FID 08T13TX SILICON UN PHOTOnOK DESCRIPTION The FID08T13TX is a Si-PIN photodiode designed for use in optical local area network LAN system and optical data link system at 0.8jum wavelength region. A photodiode chip having 1000/xm 1mm diameter of photosensitive
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08T13TX
FID08T13TX
300MHz,
374T75b
FD08T13TX
08T13TX
photodiode 850nm
PIN photodiode 10 nm
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SFH 325 equivalent
Abstract: t2856 SFH100 IRf 334
Text: SIEMENS SFH 100 SILICON PHOTODIODE HIGH BLUE SENSITIVITY Package Dimensions in Inches mm .523 (13.3) -.020 (.5) .I -12B (3.25) T j » <3.05) I. f m _031 (.8) .028 (.7) .008(20) U r Radiant sensitive area 334 X 098 (8 5 x 2 .5 ) UN FEATURES Maximum Ratings
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SILICON AVALANCHE PHOTODIODES blE ]> • PD1XX2 SERIES bSHRflST 0014705 TiT » M I T S MITSUBISHI DISCRETE SC FOR OPTICAL COMMUNICATION AND RADAR SYSTEMS TYPE NAME DESCRIPTION FEATURES PD1XX2 is a silicon avalanche photodiode (Si-APD) • High speed response (pulse rise tim e 150ps)
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150ps)
800GHz)
AD1000)
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photodiodes mitsubishi
Abstract: No abstract text available
Text: blE ]> • GD1 4 7 2 5 MITSUBISHI DISCRETE 7 flfl IMITS MITSUBISHI InGaAs PHOTODIODES PD8XX2 SERIES SC FOR OPTICAL COMMUNICATION TYPE NAME DESCRIPTION PD8XX2 is an FEATURES InGaAs avalanche • High quantum efficiency photodiode suitable fo r receiving the light having a wavelength
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1600nm.
photodiodes mitsubishi
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