2SD1585
Abstract: 2SB1094 K 4080
Text: SavantIC Semiconductor Product Specification 2SD1585 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·VCEO 60V;VEBO 7V;IC DC 3.0A ·Complement to type 2SB1094 APPLICATIONS ·For use in audio frequency power amplifier and general purpose applications
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2SD1585
O-220Fa
2SB1094
O-220Fa)
2SD1585
2SB1094
K 4080
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mje13003
Abstract: UTCMJE13003 transistor mje13003 MJE13003 transistor
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-126 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO
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MJE13003
O-126
QW-R204-004
mje13003
UTCMJE13003
transistor mje13003
MJE13003 transistor
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transistor mje13003
Abstract: mje13003 MJE13003 transistor UTCMJE13003 QW-R203-017 equivalent mje13003 transistor Ic 1A datasheet NPN NPN Transistor 1.5A 700V
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO
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MJE13003
O-220
QW-R203-017
transistor mje13003
mje13003
MJE13003 transistor
UTCMJE13003
equivalent mje13003
transistor Ic 1A datasheet NPN
NPN Transistor 1.5A 700V
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR BDX14A • Hermetic Metal TO66 Package. • Ideal for General Purpose Low Frequency Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VCER VCEX VEBO
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BDX14A
O-213AA)
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QW-R203-019
Abstract: MJE13007
Text: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO
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MJE13007
O-220
QW-R203-019
100ms
MJE13007
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2SB1094
Abstract: 2SD1585 vebo7v
Text: Product Specification www.jmnic.com 2SD1585 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・VCEO≥60V;VEBO≥7V;IC DC ≤3.0A ・Complement to type 2SB1094 APPLICATIONS ・For use in audio frequency power amplifier and general purpose applications
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2SD1585
O-220Fa
VCEO60V
2SB1094
O-220Fa)
2SB1094
2SD1585
vebo7v
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PT 10000
Abstract: No abstract text available
Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220F 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO
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MJE13005
O-220F
QW-R219-001
PT 10000
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR BDX14A • Hermetic Metal TO66 Package. • Ideal for General Purpose Low Frequency Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VCER VCEX VEBO
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BDX14A
O-213AA)
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Untitled
Abstract: No abstract text available
Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220F 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO
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MJE13005
O-220F
Co000
QW-R219-001
100ms
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MJE13005
Abstract: mje-13005 QW-R203-018 PT 10000
Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO
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MJE13005
O-220
QW-R203-018
100ms
MJE13005
mje-13005
PT 10000
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equivalent mje13005
Abstract: MJE13005 ib11
Text: MJE13005 NPN SILICON TRANSISTOR ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT o ABSOLUTE MAXIMUM RATINGS TA=25 C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO V Collector-Emitter Voltage VCEO VEBO 700 400 9 4 75 Emitter-Base Voltage
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MJE13005
equivalent mje13005
MJE13005
ib11
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transistor MJe13007
Abstract: mje13007 equivalent MJE13007 transistormje13007
Text: NPN SILICON TRANSISTOR MJE13007 ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT ABSOLUTE MAXIMUM RATINGS TA=25oC CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO V Collector-Emitter Voltage VCEO VEBO 700 400 9 8 80 Emitter-Base Voltage Collector Current
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MJE13007
transistor MJe13007
mje13007 equivalent
MJE13007
transistormje13007
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2SB0939
Abstract: 2SB0939A 2SB939 2SB939A 2SD1262 2SD1262A
Text: Power Transistors 2SB0939, 2SB0939A 2SB939, 2SB939A Silicon PNP epitaxial planar type Darlington For midium-speed power switching Complementary to 2SD1262 and 2SD1262A –60 VEBO –7 V Peak collector current ICP –12 A Collector current IC –8 A dissipation
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2SB0939,
2SB0939A
2SB939,
2SB939A)
2SD1262
2SD1262A
2SB0939
2SB0939
2SB0939A
2SB939
2SB939A
2SD1262A
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Untitled
Abstract: No abstract text available
Text: SILICON NPN TRANSISTOR BDY54 • High Power • Hermetic TO-3 Metal Package • Ideally suited for Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC IB PD TJ
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BDY54
O-204AA)
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Untitled
Abstract: No abstract text available
Text: 2SC4908 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor VCEO 800 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A hFE IC Symbol Conditions Ratings Unit VCB=800V 100max µA VEB=7V 100max µA IC=10mA 800min V VCE=4V, IC=0.7A 10 to 30 10.1±0.2
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2SC4908
100max
800min
40typ
O220F)
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2SC4908
Abstract: FM20
Text: 2SC4908 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor VCEO 800 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A hFE IC Symbol Conditions 2SC4908 Unit VCB=800V 100max µA VEB=7V 100max µA IC=10mA 800min V VCE=4V, IC=0.7A 10 to 30 10.1±0.2
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2SC4908
100max
800min
40typ
O220F)
2SC4908
FM20
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2SB939
Abstract: 2SB939A 2SD1262 2SD1262A DSA003711
Text: Power Transistors 2SB939, 2SB939A Silicon PNP epitaxial planar type Darlington For midium-speed power switching Complementary to 2SD1262 and 2SD1262A –60 VEBO –7 V Peak collector current ICP –12 A Collector current IC –8 A dissipation Ta=25°C 45 PC
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2SB939,
2SB939A
2SD1262
2SD1262A
2SB939
2SB939
2SB939A
2SD1262A
DSA003711
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2SA1971
Abstract: No abstract text available
Text: Transistors SMD Type Silicon PNP Triple Diffused Type 2SA1971 Features High voltage: VCE = -400 V Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -400 V Collector-emitter voltage VCEO -400 V Emitter-base voltage VEBO
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2SA1971
-10mA,
-100mA
-20mA
-100mA
-10mA
-50mA
2SA1971
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2SC4518
Abstract: 2SC4518A FM20
Text: 2SC4518/4518A Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose Conditions V ICBO VCB=800V 100max µA VCEO 550 V IEBO VEBO 7 V V(BR)CEO 5(Pulse10) A hFE
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2SC4518/4518A
100max
O220F)
2SC4518
2SC4518A
550min
Pulse10)
50typ
2SC4518A
FM20
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KSC5039
Abstract: NPN Transistor TO220 vcc 150V
Text: KSC5039 NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATION TO-220 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic VCBO Symbol 800 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current DC
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KSC5039
O-220
KSC5039
NPN Transistor TO220 vcc 150V
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TO220 HEATSINK DATASHEET
Abstract: 2SC5239 ATV3 transistor 800V 1A
Text: 2SC5239 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Ratings Unit ICBO VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 VEBO IC Symbol 10.2±0.2
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2SC5239
MT-25
100max
550min
300mA
TO220 HEATSINK DATASHEET
2SC5239
ATV3
transistor 800V 1A
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Untitled
Abstract: No abstract text available
Text: Transistors SMD Type Product specification 2SA1971 Features High voltage: VCE = -400 V Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -400 V Collector-emitter voltage VCEO -400 V Emitter-base voltage VEBO -7 V Collector current
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2SA1971
-400VBO
-10mA,
-100mA
-20mA
-100mA
-10mA
-50mA
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Untitled
Abstract: No abstract text available
Text: SILICON NPN TRANSISTOR BDY54 • High Power • Hermetic TO-3 Metal Package • Ideally suited for Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC IB PD TJ
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BDY54
O-204AA)
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Untitled
Abstract: No abstract text available
Text: Transistor 2SC5018 Silicon NPN triple diffusion planer type For high breakdown voltage high-speed switching Unit: mm 6.9±0.1 4.0 • Features High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.65 max. 14.5±0.5 ● 1.0 ● (0.5) (1.0)
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2SC5018
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