2SC3134
Abstract: No abstract text available
Text: 2SA1252 / 2SC3134 Ordering number : EN1048D 2SA1252 / 2SC3134 PNP / NPN Epitaxial Planar Silicon Transistors High VEBO, AF Amp Applications Features • • High VEBO. Wide ASO and high durability against breakdown. Specifications : 2SA1252 Absolute Maximum Ratings at Ta=25°C
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EN1048D
2SA1252
2SC3134
2SA1252
2SC3134
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VEBO-15V
Abstract: 2SC4181A VEBO15V High Vebo MARKING L15
Text: Transistors IC SMD Type NPN Silicon Epitaxia 2SC4181A Features High DC current gain:Hfe=1000 to 3200 Low VCE sat : VCE(sat)=0.07v TYP High VEBO: VEBO=15V 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage
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2SC4181A
-10mA
150mA
VEBO-15V
2SC4181A
VEBO15V
High Vebo
MARKING L15
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Untitled
Abstract: No abstract text available
Text: 2SD2537 Datasheet NPN 1.2A 25V Middle Power Transistor lOutline Parameter Value VCEO IC 25V 1.2A MPT3 Base Collector Emitter 2SD2537 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) High DC Current gain hFE= 820 to 1,800 3) High VEBO VEBO=12V(Min.)
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2SD2537
SC-62)
OT-89>
500mA/10mA)
R1102A
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wt smd
Abstract: vebo Transistors marking WT SMD MARKING 2SC4694 WT SMD MARKING
Text: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistors 2SC4694 Features Adoption of MBIT process. High DC current gain. High VEBO VEBO 25V . High reverse hFE (150 typ). Small ON resistance [Ron=1Ù (IB=5mA)]. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25
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2SC4694
100mA
wt smd
vebo
Transistors marking WT
SMD MARKING
2SC4694
WT SMD MARKING
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistors 2SC4694 Features Adoption of MBIT process. High DC current gain. High VEBO VEBO 25V . High reverse hFE (150 typ). Small ON resistance [Ron=1Ù (IB=5mA)]. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25
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2SC4694
100mA
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2sc3114
Abstract: 2SA1246 high vebo
Text: Ordering number:EN1047B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1246/2SC3114 High-VEBO, AF Amp Applications Features Package Dimensions • High VEBO. · Wide ASO and highly resistant to breakdown. unit:mm 2003A [2SA1246/2SC3114] B:Base C:Collector
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EN1047B
2SA1246/2SC3114
2SA1246/2SC3114]
SC-43
2SA1246
2sc3114
2SA1246
high vebo
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2SC3134
Abstract: 2SA1252 ITR03076 ITR03077
Text: 2SA1252 / 2SC3134 Ordering number : EN1048D SANYO Semiconductors DATA SHEET 2SA1252 / 2SC3134 PNP / NPN Epitaxial Planar Silicon Transistors High VEBO, AF Amp Applications Features • • High VEBO. Wide ASO and high durability against breakdown. Specifications : 2SA1252
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2SA1252
2SC3134
EN1048D
2SA1252
150on
2SC3134
ITR03076
ITR03077
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High Vebo
Abstract: 2SC3134 2SA1252 EN1048B
Text: Ordering number:EN1048B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1252/2SC3134 High VEBO, AF Amp Applications Features Package Dimensions • High VEBO. · Wide ASO and high durability against breakdown. unit:mm 2018A [2SA1252/2SC3134] C : Collector B : Base
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EN1048B
2SA1252/2SC3134
2SA1252/2SC3134]
2SA1252
High Vebo
2SC3134
2SA1252
EN1048B
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2SA1246
Abstract: 2sc3114 ITR03038 ITR03039 ITR03040
Text: Ordering number:ENN1047C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1246/2SC3114 High-VEBO, AF Amp Applications Features Package Dimensions • High VEBO. · Wide ASO and highly resistant to breakdown. unit:mm 2003B [2SA1246/2SC3114] 5.0 4.0 5.0 4.0 0.6
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ENN1047C
2SA1246/2SC3114
2003B
2SA1246/2SC3114]
2SA1246
2SA1246
2sc3114
ITR03038
ITR03039
ITR03040
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VEBO-15V
Abstract: 2SC4390 npn smd 2a
Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4390 Features Adoption of MBIT process. High DC current gain hFE=800 to 3200 . Large current capacity (IC=2A). Low collector-to-emitter saturation voltage (VCE(sat) 0.3V). High VEBO (VEBO 15V).
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2SC4390
500mA
VEBO-15V
2SC4390
npn smd 2a
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transistor marking wt
Abstract: SMD TRANSISTOR MARKING BR smd transistor marking 36 2SC4695 MARKING SMD NPN TRANSISTOR BR high vebo
Text: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4695 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 High VEBO VEBO 25V . 1 0.55 High DC current gain. +0.1 1.3-0.1 +0.1 2.4-0.1 Adoption of FBET process. 2 +0.1 0.95-0.1 +0.1 1.9-0.1
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2SC4695
OT-23
100mA
100mV
transistor marking wt
SMD TRANSISTOR MARKING BR
smd transistor marking 36
2SC4695
MARKING SMD NPN TRANSISTOR BR
high vebo
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VEBO-15V
Abstract: 2SC3651
Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistors 2SC3651 Features High DC current gain High breakdown voltage Low colleotor-to- emitter saturation voltage High VEBO VEBO 15V Very small size making it easy to provide high-density small-sized hybrid IC's.
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2SC3651
100mA
100mA
VEBO-15V
2SC3651
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smd marking ks
Abstract: 2SA1813 VEBO-15V
Text: Transistors IC SMD Type PNP Epitaxial Planar Silicon Transistors 2SA1813 Features Very small-sized package. Adoption of FBET process. High DC current gain hFE=500 to 1200 . Low collector-to-emitter saturation voltage 0.3V). (VCE(sat) High VEBO (VEBO 15V).
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2SA1813
-10mA
-50mA
smd marking ks
2SA1813
VEBO-15V
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2SA1252
Abstract: 2SC3134 ITR03076 ITR03077 ITR03078
Text: Ordering number:ENN1048C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1252/2SC3134 High VEBO, AF Amp Applications Features Package Dimensions • High VEBO. · Wide ASO and high durability against breakdown. unit:mm 2018B 0.4 0.16 0 to 0.1 1 : Base 2 : Emitter
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ENN1048C
2SA1252/2SC3134
2018B
2SA1252/2SC3134]
2SA1252
2SA1252
2SC3134
ITR03076
ITR03077
ITR03078
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SA1813 Features Very small-sized package. Adoption of FBET process. High DC current gain hFE=500 to 1200 . Low collector-to-emitter saturation voltage (VCE(sat) 0.3V). High VEBO (VEBO 15V). 1 Emitter 2 Base 3 Collector
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2SA1813
-10mA
-50mA
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Untitled
Abstract: No abstract text available
Text: Product specification 2SA1434 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Adoption of FBET process. 0.4 3 VCE(sat 0.5V). 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 15V). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 High VEBO (VEBO 0.55 Low collector-to-emitter saturation voltage
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2SA1434
OT-23
-10mA
-50mA
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2SA1952
Abstract: 2SC5103 High speed switching Transistor
Text: 2SC5103 Transistors High speed switching transistor 60V, 5A 2SC5103 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO IC Collector current Collector power dissipation
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2SC5103
100ms
30MHz
SC-63
2SA1952.
2SA1952
2SC5103
High speed switching Transistor
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Untitled
Abstract: No abstract text available
Text: NPN SILICON SWITCHING TRANSISTOR 2N5785N1 • Hermetic SMD0.5 Metal package. • Ideally Suited for Linear Amplifier and Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC
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2N5785N1
O-276AA)
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2SC5103
Abstract: 2SA1952 2SA19
Text: 2SC5103 Transistors High speed switching transistor 60V, 5A 2SC5103 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO IC Collector current Collector power dissipation
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2SC5103
100ms
2SC5103
2SA1952
2SA19
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EN3486
Abstract: 2SC4695 vebo 25
Text: Ordering num ber: EN3486 SAWO No.3486 _ 2SC4695 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp, Muting Applications i Features • Adoption of FBET process - High DC current gain • High VEbo VEbo ^ 25V • High reverse h^E (150 typ)
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EN3486
2SC4695
2SC4695-applied
EN3486
2SC4695
vebo 25
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2sc3114
Abstract: 2SA1246 2sa124
Text: Ordering num ber:EN 1047B 2SA1246/2SC3114 NO.1047B PNP/ NPN Epitaxial Planar Silicon Transistors High-VEBO> AF Amp Applications Features • High VEBO • Wide ASO and highly resistant to breakdown { : 2SA1246 Absolute Maximum Ratings/Ta = 25°C Collector to base voltage
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1047B
l047B
2SA1246/2SC3114
2SA1246
2sc3114
2SA1246
2sa124
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2N6421
Abstract: No abstract text available
Text: Back to Bipolar Power Transistors 2N6421 MAXIMUM RATINGS - Absolute-M aximum Values: VcBO_. Vceo sus . Vebo.
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2N6421
O-213AA
O-661
2N6421
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2SC4536
Abstract: 2SC454 2SC4568 T74100
Text: h:7 « S ±S ’ . S § m • 2 S C 4 5 3 6 : -7-i 5 afäimmVIWiHSo MiimvmtcMMv m i n * «Ä B l! Vceo (V 15 CATV"? Vebo (V) 3 Ic(mA) 250 Pt (W>* 2 T j (°C) 150 * « u s w 0 2 S C 4 5 3 7 S SL d i S : VHF/UHF ß v f i g i f t a M SHF Vceo (V) 11 Vebo (V)
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2SC4536
105dB//V,
190MHz,
105dB
200MHz
900MHz
2SC4569
2SC4536
2SC454
2SC4568
T74100
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Untitled
Abstract: No abstract text available
Text: “BIG IDEAS IN BIG POWER ” • PowerTecn 150 AMPERE TRANSISTOR PT-2523 PT-2524 FEATURES PT-2524 PT-2523 . 450V 400V . . 500V 450V . . V Ctx • • ■ ■ Vebo . 8V lc . 100A
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PT-2523
PT-2524
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