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    VCSEL FLIP CHIP Search Results

    VCSEL FLIP CHIP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    VCSEL FLIP CHIP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VCSEL array, 850nm flip

    Abstract: 1550nm optical detector 10Gbps VCSEL die bonding VCSEL array, 850nm, flip chip laser DFB 1550nm 10mW VCSEL array, 850nm 1550nm laser diode for 10Gbps laser DFB 1550nm 10mW single VCSEL die V850-2106-001
    Text: DATA SHEET 10GBPS 850NM VCSEL ARRAYS V850-2106-001, V850-TBD-001 FEATURES: 850nm isolated cathode and anode VCSEL array Capable of 10Gbps per channel modulation Capable of flip chip mounting The V850-2106-001 and the V850-TBD-001 are high-performance 850 nm


    Original     		PDF 10GBPS 850NM V850-2106-001, V850-TBD-001 V850-2106-001 V850-TBD-001 1-866-MY-VCSEL VCSEL array, 850nm flip 1550nm optical detector 10Gbps VCSEL die bonding VCSEL array, 850nm, flip chip laser DFB 1550nm 10mW VCSEL array, 850nm 1550nm laser diode for 10Gbps laser DFB 1550nm 10mW single VCSEL die

    VCSEL array, 850nm flip

    Abstract: ULM Photonics Monolithic-VCSEL-array VCSEL array, 850nm, flip chip VCSEL array, 850nm vcsel array ULM Photonics GmbH
    Text: V3 Monolithic VCSEL array to FLIP CHIP for highly parallel data transport • Layout for direct flip-chip bonding and substrate removal • Custom-designed array layout • Lowest power consumption • Lowest threshold current Threshold voltage UTH V 1.5 1.8


    Original     		PDF 850nm VCSEL array, 850nm flip ULM Photonics Monolithic-VCSEL-array VCSEL array, 850nm, flip chip VCSEL array, 850nm vcsel array ULM Photonics GmbH

    Untitled

    Abstract: No abstract text available
    Text: 850nm 10Gb/s Multimode Flip Chip VCSEL Array Preliminary Features: • 850nm multimode emission • Low threshold and operation current • High reliability • Low electrical parasitics • Data rates from DC to 10 Gb/s • Flip chip bondable top contact


    Original     		PDF 850nm 10Gb/s 850nm APA4201xy0000

    ULM Photonics

    Abstract: VCSEL array ULM Photonics GmbH
    Text: Monolithic VCSEL array for highly parallel data transport • Layout for direct flip-chip bonding and substrate removal • Custom-designed array layout • Lowest power consumption • Lowest threshold current Threshold voltage UTH V 1.5 1.8 2.0 ELECTRO-OPTICAL-CHARACTERISTICS, CHIP FLIP-CHIP MOUNTED


    Original     		PDF 850nm ULM Photonics VCSEL array ULM Photonics GmbH

    VCSEL array, 850nm flip

    Abstract: APA4301120001 Oclaro vcsel array VCSEL 10g CHIP VCSEL array, 850nm VCSEL array, 850nm, flip chip VCSEL 10G VCSEL 10g CHIP flip VCSEL flip
    Text: 850nm 10Gb/s Multimode Dual Top Contact VCSEL Array Preliminary Features: • 850nm multimode emission  Low threshold and operation current  High reliability  Low electrical parasitics  Data rates from DC to 10 Gb/s  Flip chip bondable dual top contact


    Original     		PDF 850nm 10Gb/s APA4301xy0001 VCSEL array, 850nm flip APA4301120001 Oclaro vcsel array VCSEL 10g CHIP VCSEL array, 850nm VCSEL array, 850nm, flip chip VCSEL 10G VCSEL 10g CHIP flip VCSEL flip

    R/ULM850-05-TT-C0101D

    Abstract: No abstract text available
    Text: 5 Gbps VCSEL 850 nm 1x1/1x4/12 chip    For flip chip stud bump and wire bond Unsealed 85% r.H./85°C certified 1, 4, or 12 channel array configuration INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT Preliminary ELECTRO-OPTICAL CHARACTERISTICS


    Original     		PDF 1x1/1x4/12 ULM850-05-TT-C0101D ULM850-05-TT-C0104D ULM850-05-TT-C0112D 235x335x150 985x335x150 2985x335x150 R/ULM850-05-TT-C0101D

    SM 850nm laser vcsel

    Abstract: No abstract text available
    Text: Laser Diodes Single-mode & polarizationstable VCSEL 850 nm, TO46, 2.0 mW • Single-mode • Ideal circular gaussian beam • Stable Polarization • Built-in ESD protection structure PRELIMINARY ELECTRO-OPTICAL CHARACTERISTICS T=20°C unless otherwise stated


    Original     		PDF

    ULM850-L2-PL-S0101U

    Abstract: ULM850-PM-TN-S46FZP ULM850-VP-PL-S46XOP 894nm ULM850-PM-TN-S46XZP SM 850nm laser vcsel ulm tdlas vcsel SMD MAP 3959 ulm vcsel reference
    Text: Single Mode VCSEL 850nm,TO46,0.5mW Ideal circular gaussian beam Built-in ESD protection structure High reliability, 10 years @ 85°C INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT ELECTRO-OPTICAL CHARACTERISTICS T=20°C unless otherw ise stated


    Original     		PDF 850nm 850nm-long-life-sm-vcsel ULM850-L2-PL-S0101U ULM850-PM-TN-S46FZP ULM850-VP-PL-S46XOP 894nm ULM850-PM-TN-S46XZP SM 850nm laser vcsel ulm tdlas vcsel SMD MAP 3959 ulm vcsel reference

    PIN photodiode responsivity 1550nm 1.1

    Abstract: Photodiode 1550nm bandwidth 1310nm Receivers LX3051 441-GHz 1550nm photodiode 5 Ghz diode 0 dB 1550nm IR 2E09 sensitivity dB photodiode pin 1550nm InGaAs Photodiode 1550nm
    Text: LX3051 3.125 Gbps I N T E G R A T E D P R O D U C T S Coplanar InGaAs/InP PIN Photo Diode PRELIMINARY DATA SHEET KEY FEATURES DESCRIPTION gurations including traditional wirebond or flip chip assembly This device is ideal for manufacturers of optical receivers,


    Original     		PDF LX3051 1550nm) 43GHz 95GHz 56GHz 41GHz 83GHz PIN photodiode responsivity 1550nm 1.1 Photodiode 1550nm bandwidth 1310nm Receivers 441-GHz 1550nm photodiode 5 Ghz diode 0 dB 1550nm IR 2E09 sensitivity dB photodiode pin 1550nm InGaAs Photodiode 1550nm

    1550nm photodiode 1.6 Ghz

    Abstract: 1550nm photodiode 5 Ghz LX3055 InGaAs Photodiode 1550nm
    Text: LX3055 TM Coplanar InGaAs/InP PIN Photo Diode P RODUCTION D ATA S HEET Microsemi’s InGaAs/InP PIN Photo Diode chips are ideal for high bandwidth 1310nm and 1550nm optical networking applications. The device series offers high responsivity, low dark current, and


    Original     		PDF LX3055 1310nm 1550nm LX3055 1550nm photodiode 1.6 Ghz 1550nm photodiode 5 Ghz InGaAs Photodiode 1550nm

    Microsemi LX3055

    Abstract: photo diode 10 Gbps LX3055 1550nm photodiode 1.6 Ghz VCSEL 1550 nm 1 Gbps 1550nm VCSEL InGaAs Photodiode 1550nm PHOTO diode
    Text: LX3055 TM Coplanar InGaAs/InP PIN Photo Diode P RODUCTION D ATA S HEET Microsemi’s InGaAs/InP PIN Photo Diode chips are ideal for high bandwidth 1310nm and 1550nm optical networking applications. The device series offer high responsivity, low dark current, and


    Original     		PDF LX3055 1310nm 1550nm LX3055 Microsemi LX3055 photo diode 10 Gbps 1550nm photodiode 1.6 Ghz VCSEL 1550 nm 1 Gbps 1550nm VCSEL InGaAs Photodiode 1550nm PHOTO diode

    LX3051

    Abstract: 1550nm catv receiver Photodiode 1550nm bandwidth photodiode responsivity 1550nm 2 sensitivity dB photodiode pin 1550nm 3Gbps InGaAs Photodiode 1550nm vcsel 1310
    Text: LX3051 3.125 Gbps I N T E G R A T E D P R O D U C T S Coplanar InGaAs/InP PIN Photo Diode PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION gurations including traditional wirebond or flip chip assembly This device is ideal for manufacturers of optical receivers,


    Original     		PDF LX3051 LX3051 1550nm catv receiver Photodiode 1550nm bandwidth photodiode responsivity 1550nm 2 sensitivity dB photodiode pin 1550nm 3Gbps InGaAs Photodiode 1550nm vcsel 1310

    1550nm catv receiver

    Abstract: LX3050 LX3052 VCSEL array, 1550
    Text: LX3050/52 12.5Gbps I N T E G R A T E D P R O D U C T S Coplanar InGaAs/InP PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION custom assembly configurations including traditional wirebond or flip chip assembly This device is ideal for manufacturers of optical receivers,


    Original     		PDF LX3050/52 LX3050 LX3052, 50ohm LX3050 1550nm catv receiver LX3052 VCSEL array, 1550

    vcsel receiver

    Abstract: MXP7002 IR 2E09 850nm 300 nA photo Diode
    Text: MXP7002 I N T E G R A T E D P R O D U C T S 3.125 Gbps GaAs PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION either bond wire or flip chip configurations. This device is ideal for manufacturers of optical receivers, transponders, optical transmission


    Original     		PDF MXP7002 850nm MXP7002 High-893-2570 vcsel receiver IR 2E09 850nm 300 nA photo Diode

    InGaAs Photodiode 1550nm

    Abstract: 1310 vcsel
    Text: Obsolete Product – not recommended for new design LX3055 TM Coplanar InGaAs/InP PIN Photo Diode P RODUCTION D ATA S HEET custom assembly configurations including traditional wirebond or flip chip assembly This device is ideal for manufacturers of optical receivers,


    Original     		PDF LX3055 1310nm 1550nm LX3055 InGaAs Photodiode 1550nm 1310 vcsel

    MXP7002

    Abstract: IR 2E09
    Text: MXP7002 I N T E G R A T E D P R O D U C T S 3.125 Gbps GaAs PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION either bond wire or flip chip configurations. This device is ideal for manufacturers of optical receivers, transponders, optical transmission


    Original     		PDF MXP7002 850nm MXP7002 High893-2570 IR 2E09

    VCSEL array, 850nm flip

    Abstract: MXP7001 GaAs array, 850nm
    Text: MXP7001 I N T E G R A T E D P R O D U C T S 10 Gbps GaAs PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION either bond wire or flip chip configurations. This device is ideal for manufacturers of optical receivers, transponders, optical transmission


    Original     		PDF MXP7001 VCSEL array, 850nm flip MXP7001 GaAs array, 850nm

    VCSEL array, 850nm flip

    Abstract: MXP7001
    Text: MXP7001 I N T E G R A T E D P R O D U C T S 10 Gbps GaAs PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION either bond wire or flip chip configurations. This device is ideal for manufacturers of optical receivers, transponders, optical transmission


    Original     		PDF MXP7001 850nm VCSEL array, 850nm flip MXP7001

    Untitled

    Abstract: No abstract text available
    Text: LX3051 3.125 Gbps TM Coplanar InGaAs/InP PIN Photo Diode PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION gurations including traditional wirebond or flip chip assembly This device is ideal for manufacturers of optical receivers, transceivers, transponders, optical


    Original     		PDF LX3051

    InGaAs array 1550nm

    Abstract: No abstract text available
    Text: LX3050/52 12.5Gbps Coplanar InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRELIMINARY DATASHEET KEY FEATURES DESCRIPTION The device series offers impedance matched coplanar waveguide structure for high performance and sensitivity. The LX305X series of coplanar


    Original     		PDF LX3050/52 1310nm 1550nm LX305X diode1861 LX3050/2 InGaAs array 1550nm

    diode 0 dB 1550nm

    Abstract: LX3050 LX3052 photo diode array amplifier 1310 vcsel photo diode array InGaAs AW32 VCSEL flip InGaAs array 1550nm
    Text: LX3050/52 12.5Gbps Coplanar InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRELIMINARY DATASHEET KEY FEATURES DESCRIPTION The device series offers impedance matched coplanar waveguide structure for high performance and sensitivity. The LX305X series of coplanar


    Original     		PDF LX3050/52 LX305X L14-898-8121, LX3050/2 diode 0 dB 1550nm LX3050 LX3052 photo diode array amplifier 1310 vcsel photo diode array InGaAs AW32 VCSEL flip InGaAs array 1550nm

    Untitled

    Abstract: No abstract text available
    Text: LX3050/52 12.5Gbps Coplanar InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRELIMINARY DATASHEET KEY FEATURES DESCRIPTION The device series offers impedance matched coplanar waveguide structure for high performance and sensitivity. The LX305X series of coplanar


    Original     		PDF LX3050/52 LX305X LX3050/2

    InGaAs Photodiode 1550nm

    Abstract: photodiode sensitivity 1550nm 2
    Text: LX3051 3.125 Gbps Coplanar InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRELIMINARY DATA SHEET KEY FEATURES DESCRIPTION The device series offers impedance matched coplanar waveguide structure for high performance and sensitivity. The LX3051 3 Gbps coplanar


    Original     		PDF LX3051 1310nm 1550nm InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2

    1430nm

    Abstract: 1550NM InGaAs array 1550nm
    Text: LX3050/52 12.5Gbps Coplanar InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRELIMINARY DATASHEET KEY FEATURES DESCRIPTION The device series offers impedance matched coplanar waveguide structure for high performance and sensitivity. The LX305X series of coplanar


    Original     		PDF LX3050/52 1310nm 1550nm LX305X diode1861 LX3050/2 1430nm InGaAs array 1550nm