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    VCSEL ARRAY, 850NM, 10G Search Results

    VCSEL ARRAY, 850NM, 10G Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    TRS10E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS6E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 6 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS3E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 3 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    VCSEL ARRAY, 850NM, 10G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VCSEL array driver

    Abstract: ARRAY VCSEL
    Text: InnovativeInnov Innovative VCSEL Solutions . Delivered Advanced Optical Components 10 Gbps 850nm VCSEL Array VCSEL Array Die HFE8004-103, HFE8012-103 Key Features: ƒ ƒ ƒ ƒ 850nm cathode common VCSEL array Capable of 10Gbps per channel modulation


    Original     		PDF 850nm HFE8004-103, HFE8012-103 10Gbps HFE80xx-103 1-866-MY-VCSEL 1-866-MY-VCSEL VCSEL array driver ARRAY VCSEL

    VCSEL array common anode

    Abstract: VCSEL die bonding VCSEL array, 850nm HFE8012-103 Finisar 1x12 VCSEL
    Text: DATA SHEET 10GBPS 850NM VCSEL ARRAYS HFE8004-103, HFE8012-103 FEATURES: 850nm cathode common VCSEL array Capable of 10Gbps per channel modulation Fully tested and Burned in with STABILAZETM process 1x4 and 1x12 version The HFE80xx-103 are high-performance 850 nm VCSEL Vertical Cavity SurfaceEmitting Laser array die optimized for high-speed data communications.


    Original     		PDF 10GBPS 850NM HFE8004-103, HFE8012-103 HFE80xx-103 1-866-MY-VCSEL VCSEL array common anode VCSEL die bonding VCSEL array, 850nm HFE8012-103 Finisar 1x12 VCSEL

    Finisar 1x12 VCSEL

    Abstract: VCSEL array common anode VCSEL array, 850nm
    Text: DATA SHEET 10GBPS 850NM VCSEL ARRAYS HFE8004-103, HFE8012-103 FEATURES: 850nm cathode common VCSEL array Capable of 10Gbps per channel modulation Fully tested and Burned in with STABILAZETM process 1x4 and 1x12 version The HFE80xx-103 are high-performance 850 nm VCSEL Vertical Cavity SurfaceEmitting Laser array die optimized for high-speed data communications.


    Original     		PDF 10GBPS 850NM HFE8004-103, HFE8012-103 HFE80xx-103 1-866-MY-VCSEL Finisar 1x12 VCSEL VCSEL array common anode VCSEL array, 850nm

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 10GBPS 850NM VCSEL ARRAYS HFE8004-103, HFE8012-103 FEATURES: 850nm cathode common VCSEL array Capable of 10Gbps per channel modulation Fully tested and Burned in with STABILAZETM process 1x4 and 1x12 version The HFE80xx-103 are high-performance 850 nm VCSEL Vertical Cavity SurfaceEmitting Laser array die optimized for high-speed data communications.


    Original     		PDF 10GBPS 850NM HFE8004-103, HFE8012-103 HFE80xx-103 1-866-MY-VCSEL

    HFE8004-103

    Abstract: VCSEL die bonding VCSEL array common anode VCSEL array, 850nm 10GBPS 850NM HFE8012-103 T-25 laser DFB 1550nm 10mW VCSEL array driver
    Text: DATA SHEET 10GBPS 850NM VCSEL ARRAYS HFE8004-103, HFE8012-103 FEATURES: 850nm cathode common VCSEL array Capable of 10Gbps per channel modulation Fully tested and Burned in with STABILAZETM process 1x4 and 1x12 version The HFE80xx-103 are high-performance 850 nm VCSEL Vertical Cavity SurfaceEmitting Laser array die optimized for high-speed data communications.


    Original     		PDF 10GBPS 850NM HFE8004-103, HFE8012-103 HFE80xx-103 1-866-MY-VCSEL HFE8004-103 VCSEL die bonding VCSEL array common anode VCSEL array, 850nm HFE8012-103 T-25 laser DFB 1550nm 10mW VCSEL array driver

    V850-2093-002

    Abstract: 1310nm fiber optic for 10Gbps VCSEL array driver Finisar 1x12 VCSEL VCSEL array, 850nm 10GBPS 850NM T-25 laser DFB 1550nm 10mW 1310nm VCSEL transceivers
    Text: DATA SHEET 10GBPS 850NM VCSEL ARRAYS V850-2092-002, V850-2093-002 FEATURES: 850nm cathode common VCSEL array Capable of 10Gbps per channel modulation Fully tested and Burned in with STABILAZETM process 1x4 and 1x12 version The V850-209x-002 are high-performance 850 nm VCSEL Vertical Cavity


    Original     		PDF 10GBPS 850NM V850-2092-002, V850-2093-002 V850-209x-002 1-866-MY-VCSEL V850-2093-002 1310nm fiber optic for 10Gbps VCSEL array driver Finisar 1x12 VCSEL VCSEL array, 850nm T-25 laser DFB 1550nm 10mW 1310nm VCSEL transceivers

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 10GBPS 850NM VCSEL ARRAYS V850-2092-002, V850-2093-002 FEATURES: 850nm cathode common VCSEL array Capable of 10Gbps per channel modulation Fully tested and Burned in with STABILAZETM process 1x4 and 1x12 version The V850-209x-002 are high-performance 850 nm VCSEL Vertical Cavity


    Original     		PDF 10GBPS 850NM V850-2092-002, V850-2093-002 V850-209x-002 1-866-MY-VCSEL

    VCSEL array, 850nm flip

    Abstract: 1550nm optical detector 10Gbps VCSEL die bonding VCSEL array, 850nm, flip chip laser DFB 1550nm 10mW VCSEL array, 850nm 1550nm laser diode for 10Gbps laser DFB 1550nm 10mW single VCSEL die V850-2106-001
    Text: DATA SHEET 10GBPS 850NM VCSEL ARRAYS V850-2106-001, V850-TBD-001 FEATURES: 850nm isolated cathode and anode VCSEL array Capable of 10Gbps per channel modulation Capable of flip chip mounting The V850-2106-001 and the V850-TBD-001 are high-performance 850 nm


    Original     		PDF 10GBPS 850NM V850-2106-001, V850-TBD-001 V850-2106-001 V850-TBD-001 1-866-MY-VCSEL VCSEL array, 850nm flip 1550nm optical detector 10Gbps VCSEL die bonding VCSEL array, 850nm, flip chip laser DFB 1550nm 10mW VCSEL array, 850nm 1550nm laser diode for 10Gbps laser DFB 1550nm 10mW single VCSEL die

    vcsel array

    Abstract: VCSEL array, 850nm 8B12 Header, 1x4 TSA-8B04-000 TSA-8B12-00
    Text: Preliminary TSA-8B04-000 High Performance 850nm Oxide-Confined VCSEL Array FEATURES: • Capable to run speed of 2.5/3.125 Gbps per channel in Datacom application. • 1x4 VCSEL array. • Symmetrical beam. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS Threshold Current


    Original     		PDF TSA-8B04-000 850nm TSA-8B12-000 vcsel array VCSEL array, 850nm 8B12 Header, 1x4 TSA-8B04-000 TSA-8B12-00

    Untitled

    Abstract: No abstract text available
    Text: InnovativeInnov Innovative VCSEL Solutions . Delivered Advanced Optical Components 4Gbps 850nm VCSEL Arrays VCSEL Array Die HFE8004-102, HFE8012-102 Key Features: • • • • Stabilized and fully tested Designed for drive currents between 3 and 7 mA average


    Original     		PDF 850nm HFE8004-102, HFE8012-102 HFE80xx-102 1-866-MY-VCSEL 1-866-MY-VCSEL

    VCSEL 10g CHIP

    Abstract: VCSEL array HDMI VCSEL array, 850nm vcsel array VCSEL 10g VCSEL die APA7301120000 APA7301040000 1x12 VCSEL VCSEL array, 850nm, 10G
    Text: 850nm 10Gb/s Multimode VCSEL Chip Array Features: • 850nm multimode emission  Low threshold and operation current  High reliability  Low electrical parasitics  Data rates from DC to 10 Gb/s  Backside common cathode and topside anode configuration


    Original     		PDF 850nm 10Gb/s 10Gb/s. APA7301xy0000 VCSEL 10g CHIP VCSEL array HDMI VCSEL array, 850nm vcsel array VCSEL 10g VCSEL die APA7301120000 APA7301040000 1x12 VCSEL VCSEL array, 850nm, 10G

    Untitled

    Abstract: No abstract text available
    Text: 850nm 10Gb/s Multimode Flip Chip VCSEL Array Preliminary Features: • 850nm multimode emission • Low threshold and operation current • High reliability • Low electrical parasitics • Data rates from DC to 10 Gb/s • Flip chip bondable top contact


    Original     		PDF 850nm 10Gb/s 850nm APA4201xy0000

    VCSEL array, 850nm flip

    Abstract: APA4301120001 Oclaro vcsel array VCSEL 10g CHIP VCSEL array, 850nm VCSEL array, 850nm, flip chip VCSEL 10G VCSEL 10g CHIP flip VCSEL flip
    Text: 850nm 10Gb/s Multimode Dual Top Contact VCSEL Array Preliminary Features: • 850nm multimode emission  Low threshold and operation current  High reliability  Low electrical parasitics  Data rates from DC to 10 Gb/s  Flip chip bondable dual top contact


    Original     		PDF 850nm 10Gb/s APA4301xy0001 VCSEL array, 850nm flip APA4301120001 Oclaro vcsel array VCSEL 10g CHIP VCSEL array, 850nm VCSEL array, 850nm, flip chip VCSEL 10G VCSEL 10g CHIP flip VCSEL flip

    VCSEL die bonding

    Abstract: No abstract text available
    Text: InnovativeInnov Innovative VCSEL Solutions . Delivered Advanced Optical Components 2.5Gbps 850nm PIN PIN Arrays HFD8104-101, HFD8112-101 Key Features: • • • • High Bandwidth Large Active Area Low Capacitance 4 and 12 channel arrays The HFD81xx-101 is a high performance GaAs PIN detector array die ideal for use in manufacturing transceivers for parallel optical


    Original     		PDF 850nm HFD8104-101, HFD8112-101 HFD81xx-101 700-870nm 1-866-MY-VCSEL 1-866-MY-VCSEL VCSEL die bonding

    850NM

    Abstract: HFD8104-103 HFD8112-103 10GBPS 1550nm laser diode for 10Gbps PIN photodiode responsivity 1550nm 10Gbps GaAs array, 850nm diode array die VCSEL die TO56 package DIMENSION
    Text: DATA SHEET 10GBPS 850NM PIN PIN ARRAYS HFD81XX-103 FEATURES: High Bandwidth Large Active Area Low Capacitance 4 and 12 channel arrays The HFD81xx-103 are high performance GaAs PIN detector die arrays ideal for use in manufacturing transceivers for parallel optical interconnects. The arrays


    Original     		PDF 10GBPS 850NM HFD81XX-103 HFD81xx-103 700-870nm HFE80xx-103 1-866-MY-VCSEL HFD8104-103 HFD8112-103 1550nm laser diode for 10Gbps PIN photodiode responsivity 1550nm 10Gbps GaAs array, 850nm diode array die VCSEL die TO56 package DIMENSION

    S/LED 850nm

    Abstract: No abstract text available
    Text: DATA SHEET 10GBPS 850NM PIN PIN ARRAYS HFD81XX-103 FEATURES: High Bandwidth Large Active Area Low Capacitance 4 and 12 channel arrays The HFD81xx-103 are high performance GaAs PIN detector die arrays ideal for use in manufacturing transceivers for parallel optical interconnects. The arrays


    Original     		PDF 10GBPS 850NM HFD81XX-103 HFD81xx-103 700-870nm HFE80xx-103 1-866-MY-VCSEL S/LED 850nm

    850nm VCSEL application

    Abstract: vcsel array VCSEL array common anode HFE8004-101 HFE8012-101 T-25 VCSEL array, 850nm 1-866-MY-VCSEL VCSEL die bonding
    Text: InnovativeInnov Innovative VCSEL Solutions . Delivered Advanced Optical Components 2.5Gbps 850nm VCSEL VCSEL Arrays HFE8004-101, HFE8012-101 Key Features: • • • • • • Stabilized Fully tested Designed for drive currents between 3 and 12 mA average


    Original     		PDF 850nm HFE8004-101, HFE8012-101 HFE80xx-101 1-866-MY-VCSEL 1-866-MY-VCSEL 850nm VCSEL application vcsel array VCSEL array common anode HFE8004-101 HFE8012-101 T-25 VCSEL array, 850nm VCSEL die bonding

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 5GBPS 850NM VCSEL ARRAYS V850-2092-001, V850-2093-001 FEATURES: Stabilized and fully tested Designed for drive currents between 3 and 7 mA average Optimized for low dependence of electrical properties over temperature High speed ≥ 6 GHz The V850-209x-001 are high-performance 850 nm VCSEL Vertical Cavity


    Original     		PDF 850NM V850-2092-001, V850-2093-001 V850-209x-001 1-866-MY-VCSEL

    850NM

    Abstract: T-25 bias generator optic single mode 1550nm VCSEL array, 850nm VCSEL die bonding V850-2093-001 V850-2092-001
    Text: DATA SHEET 5GBPS 850NM VCSEL ARRAYS V850-2092-001, V850-2093-001 FEATURES: Stabilized and fully tested Designed for drive currents between 3 and 7 mA average Optimized for low dependence of electrical properties over temperature High speed ≥ 6 GHz The V850-209x-001 are high-performance 850 nm VCSEL Vertical Cavity


    Original     		PDF 850NM V850-2092-001, V850-2093-001 V850-209x-001 1-866-MY-VCSEL T-25 bias generator optic single mode 1550nm VCSEL array, 850nm VCSEL die bonding V850-2093-001 V850-2092-001

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 850NM PIN PIN DIODE ARRAYS HFD81XX-102 FEATURES: High Bandwidth Large Active Area Low Capacitance 4 and 12 channel arrays The HFD8104-102 and HFD8112-102 are high performance GaAs PIN detector arrays ideal for use in manufacturing transceivers for parallel optical


    Original     		PDF 850NM HFD81XX-102 HFD8104-102 HFD8112-102 700-870nm HFE80xx-102 1-866-MY-VCSEL

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 4GBPS 850NM VCSEL ARRAYS HFE8004-102, HFE8012-102 FEATURES: Stabilized and fully tested Designed for drive currents between 3 and 7 mA average Optimized for low dependence of electrical properties over temperature High speed ≥ 6 GHz The HFE80xx-102 are high-performance 850 nm VCSEL Vertical Cavity SurfaceEmitting Laser die arrays optimized for high-speed data communications.


    Original     		PDF 850NM HFE8004-102, HFE8012-102 HFE80xx-102 1-866-MY-VCSEL

    850NM

    Abstract: HFE8004-102 HFE8012-102 T-25 laser DFB low beam divergence 1550nm 10mW bias generator optic single mode 1550nm laser DFB 1550nm 10mW single 1310nm VCSEL transceivers VCSEL die bonding
    Text: DATA SHEET 4GBPS 850NM VCSEL ARRAYS HFE8004-102, HFE8012-102 FEATURES: Stabilized and fully tested Designed for drive currents between 3 and 7 mA average Optimized for low dependence of electrical properties over temperature High speed ≥ 6 GHz The HFE80xx-102 are high-performance 850 nm VCSEL Vertical Cavity SurfaceEmitting Laser die arrays optimized for high-speed data communications.


    Original     		PDF 850NM HFE8004-102, HFE8012-102 HFE80xx-102 1-866-MY-VCSEL HFE8004-102 HFE8012-102 T-25 laser DFB low beam divergence 1550nm 10mW bias generator optic single mode 1550nm laser DFB 1550nm 10mW single 1310nm VCSEL transceivers VCSEL die bonding

    VCSEL array common anode

    Abstract: No abstract text available
    Text: DATA SHEET 4GBPS 850NM VCSEL ARRAYS HFE8004-102, HFE8012-102 FEATURES: Stabilized and fully tested Designed for drive currents between 3 and 7 mA average Optimized for low dependence of electrical properties over temperature High speed ≥ 6 GHz The HFE80xx-102 are high-performance 850 nm VCSEL Vertical Cavity SurfaceEmitting Laser die arrays optimized for high-speed data communications.


    Original     		PDF 850NM HFE8004-102, HFE8012-102 HFE80xx-102 1-866-MY-VCSEL VCSEL array common anode

    850NM

    Abstract: HFD8104-102 HFD8112-102 1310nm VCSEL transceivers VCSEL array, 850nm for fiber VCSEL die bonding
    Text: DATA SHEET 850NM PIN PIN DIODE ARRAYS HFD81XX-102 FEATURES: High Bandwidth Large Active Area Low Capacitance 4 and 12 channel arrays The HFD8104-102 and HFD8112-102 are high performance GaAs PIN detector arrays ideal for use in manufacturing transceivers for parallel optical


    Original     		PDF 850NM HFD81XX-102 HFD8104-102 HFD8112-102 700-870nm HFE80xx-102 1-866-MY-VCSEL 1310nm VCSEL transceivers VCSEL array, 850nm for fiber VCSEL die bonding