Untitled
Abstract: No abstract text available
Text: FGA90N33AT tm 330V, 90A PDP Trench IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.1V @ IC = 20A • High input impedance Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
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FGA90N33AT
FGA90N33AT
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SGH20N60RUFD
Abstract: No abstract text available
Text: CO-PAK IGBT SGH20N60RUFD FEATURES TO-3P * Short Circuit rated 10µs @TC=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ IC=20A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) C APPLICATIONS * AC & DC Motor controls
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SGH20N60RUFD
25duct
SGH20N60RUFD
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SGH40N60UFD
Abstract: No abstract text available
Text: N-CHANNEL IGBT SGH40N60UFD FEATURES TO-3P * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V (@ Ic=20A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 42nS (typ.) APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls
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SGH40N60UFD
SGH40N60UFD
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200v dc motor igbt
Abstract: SGF40N60UFD
Text: CO-PAK IGBT SGF40N60UFD FEATURES TO-3PF * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V (@ Ic=20A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 42nS (typ.) APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls
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SGF40N60UFD
200v dc motor igbt
SGF40N60UFD
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SGL20N60RUFD
Abstract: No abstract text available
Text: CO-PAK IGBT SGL20N60RUFD FEATURES TO-264 * Short Circuit rated 10uS @Tc=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ Ic=20A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50nS (Typ) C APPLICATIONS * AC & DC Motor controls
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SGL20N60RUFD
O-264
SGL20N60RUFD
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DC Motor control IGBT FUJI ELECTRIC
Abstract: 1MBH20D-060 fuji electric fuji igbt fuji servo drive fuji igbt 300v 20a igbt 600v 20a igbt catalog FUJI
Text: 1MBH20D-060 Molded IGBT 600V / 20A Molded Package Features ・Small molded package ・Low power loss ・Soft switching with low switching surge and noise ・High reliability, high ruggedness RBSOA, SCSOA etc. ・Comprehensive line-up Applications ・Inverter for Motor drive
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1MBH20D-060
Ic110
DC Motor control IGBT FUJI ELECTRIC
1MBH20D-060
fuji electric
fuji igbt
fuji servo drive
fuji igbt 300v 20a
igbt 600v 20a
igbt catalog FUJI
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PM52AUBW060
Abstract: PM52AUB mitsubishi air conditioner active filter module 300V 1mF PM52A Mitsubishi IPM 20A
Text: MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR <Active <Active Filter Filter Intelligent Intelligent Power Power Module> Module> PM52AUBW060 PM52AUBW060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM52AUBW060 OUTLINE AND RATING • A/F IPM Input Current Rating Ii: 100% load: 20A rms
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PM52AUBW060
PM52AUBW060
PM52AUB
mitsubishi air conditioner
active filter module
300V 1mF
PM52A
Mitsubishi IPM 20A
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Mitsubishi IPM 20A
Abstract: Mitsubishi IPM module ELECTROLYTIC capacitor, 1000 uF 300V PM52AUBW060 PM52AUB PM52A PWM DRIVE control 100V 20A
Text: MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR <Active <Active Filter Filter Intelligent Intelligent Power Power Module> Module> PM52AUBW060 PM52AUBW060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM52AUBW060 OUTLINE AND RATING • A/F IPM Input Current Rating Ii: 100% load: 20A rms
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PM52AUBW060
Mitsubishi IPM 20A
Mitsubishi IPM module
ELECTROLYTIC capacitor, 1000 uF 300V
PM52AUBW060
PM52AUB
PM52A
PWM DRIVE control 100V 20A
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Untitled
Abstract: No abstract text available
Text: PD - 94739A IRG4PH40UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter parameter distribution and higher efficiency than
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4739A
IRG4PH40UD2
O-247AC
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IRF 3250
Abstract: swiching transistor td 1410 transistor IRF 630 ir igbt 1200V 10A P channel 600v 20a IGBT 1000V 20A transistor irf 100v 200A C-150 IRG4PH40UD2
Text: PD - 94739A IRG4PH40UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter parameter distribution and higher efficiency than
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4739A
IRG4PH40UD2
O-247AC
IRF 3250
swiching transistor
td 1410
transistor IRF 630
ir igbt 1200V 10A
P channel 600v 20a IGBT
1000V 20A transistor
irf 100v 200A
C-150
IRG4PH40UD2
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IRF 3250
Abstract: TD 1410 IC IGBT 1000V .200A application note P channel 600v 20a IGBT 035H C-150 IRFPE30 ultrafast swiching transistor IRG4PH40UD2PBF
Text: PD - 95570 IRG4PH40UD2PbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter
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IRG4PH40UD2PbF
O-247AC
IRF 3250
TD 1410 IC
IGBT 1000V .200A application note
P channel 600v 20a IGBT
035H
C-150
IRFPE30
ultrafast swiching transistor
IRG4PH40UD2PBF
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irf 3250
Abstract: ULTRAFAST 10A 600V TD 1410 IC 035H C-150 IRFPE30 IRG4PH40UD2 IGBT 100V 200A td 1410
Text: PD - 94739 IRG4PH40UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter
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IRG4PH40UD2
O-247AC
irf 3250
ULTRAFAST 10A 600V
TD 1410 IC
035H
C-150
IRFPE30
IRG4PH40UD2
IGBT 100V 200A
td 1410
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irgb20b60pd1
Abstract: 8ETH06 IRFP250 ICE 280 265 smps
Text: PD - 94613A IRGB20B60PD1 SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies Equivalent MOSFET Parameters RCE on typ. = 158mΩ
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4613A
IRGB20B60PD1
O-220AB
irgb20b60pd1
8ETH06
IRFP250
ICE 280 265 smps
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irfp250 DRIVER
Abstract: irgb20b60pd1 8ETH06 IRFP250 IRGB20B60PD
Text: PD - 94613A IRGB20B60PD1 SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies Equivalent MOSFET Parameters RCE on typ. = 158mΩ
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4613A
IRGB20B60PD1
O-220AB
irfp250 DRIVER
irgb20b60pd1
8ETH06
IRFP250
IRGB20B60PD
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035H
Abstract: IRFPE30 8ETH06 IRFP250 MOSFET 40A 600V mosfet 40a 200v IRGP20B60PDPBF
Text: PD - 95558 SMPS IGBT IRGP20B60PDPbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies Lead-Free Equivalent MOSFET Parameters
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IRGP20B60PDPbF
IRFPE30
O-247AC
035H
IRFPE30
8ETH06
IRFP250
MOSFET 40A 600V
mosfet 40a 200v
IRGP20B60PDPBF
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P channel 600v 20a IGBT
Abstract: irfp250 DRIVER 600v 20a IGBT driver 400v 20A ultra fast recovery diode IGBT SMPS 00IC datasheet irfp250 mosfet fet 600V 20A IGBT tail time IR igbt gate driver ic
Text: PD - 95558 SMPS IGBT IRGP20B60PDPbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies Lead-Free Equivalent MOSFET Parameters
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IRGP20B60PDPbF
IRFPE30
O-247AC
P channel 600v 20a IGBT
irfp250 DRIVER
600v 20a IGBT driver
400v 20A ultra fast recovery diode
IGBT SMPS
00IC
datasheet irfp250 mosfet
fet 600V 20A
IGBT tail time
IR igbt gate driver ic
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irgb20b60pd1
Abstract: 8ETH06 IRFP250
Text: PD - 94613 IRGB20B60PD1 SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.05V @ VGE = 15V IC = 13.0A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies
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IRGB20B60PD1
O-220AB
irgb20b60pd1
8ETH06
IRFP250
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Untitled
Abstract: No abstract text available
Text: PD - 94613A IRGB20B60PD1 SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies Equivalent MOSFET Parameters RCE on typ. = 158mΩ
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4613A
IRGB20B60PD1
O-220AB
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FGPF70N30T
Abstract: igbt 200v 20a transistor* igbt 70A 300 V FGPF70N30TTU
Text: FGPF70N30T 300V, 70A PDP IGBT tm Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
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FGPF70N30T
O-220F
FGPF70N30T
igbt 200v 20a
transistor* igbt 70A 300 V
FGPF70N30TTU
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IGBT 40A
Abstract: igbt 300V 70A FGA70N30T FGA70N30TTU
Text: FGA70N30T 300V, 70A PDP IGBT tm Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
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FGA70N30T
FGA70N30T
IGBT 40A
igbt 300V 70A
FGA70N30TTU
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Untitled
Abstract: No abstract text available
Text: PD - 94626 IRGP20B60PD SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.05V @ VGE = 15V IC = 13.0A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies
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IRGP20B60PD
O-247AC
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irgb20
Abstract: 8ETH06 IRFP250
Text: SMPS IGBT PD - 95615 IRGB20B60PD1PbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies Lead-Free Equivalent MOSFET Parameters
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IRGB20B60PD1PbF
O-220AB
irgb20
8ETH06
IRFP250
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Untitled
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD2271 TENTATIVE DATA Unit in mm MOTOR DRIVE.APPLICATIONS. HIGH CURRENT SWITCHING APPLICATIONS. 10±0.3 ¿ 3.2Í 0.2 • High DC Current Gain : hpE=500 (Min.) (Vce=2V, Iq =5A) ■ High Breakdown Voltage : V q e o (SUS)=200V (Min.)
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2SD2271
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN 2488 2SC3664 i NPN Triple Diffused Planar Darlington Silicon Transistor i 400V/20A Driver Applications SANYO Applications . Induction cookers . High-voltage, high-power switching Features . Fast speed adoption of MBIT process . High breakdown voltage (VCBO=800V)
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2SC3664
00V/20A
T03PB
3257TA,
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