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    VCE MAX 100 IC MAX 100MA NPN Search Results

    VCE MAX 100 IC MAX 100MA NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TB67H451AFNG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=3.5 Visit Toshiba Electronic Devices & Storage Corporation
    TB67B001BFTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=25/Iout(A)=3/Square Wave Visit Toshiba Electronic Devices & Storage Corporation
    DCL541A01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: Low / Input disable Visit Toshiba Electronic Devices & Storage Corporation

    VCE MAX 100 IC MAX 100MA NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZTX869

    Abstract: PS 307 5A DSA003778
    Text: ZTX869 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 800 900 mV IC=5A, VCE=1V* NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio


    Original     		PDF ZTX869 100mA, 50MHz 100mA 100ms ZTX869 PS 307 5A DSA003778

    t6753

    Abstract: transistor ic1A FZT653 ic1a ZDT6753 FZT753 DSA003725
    Text: SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6753 ISSUE 1 – JANUARY 1996 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T6753 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 120 -120 V Collector-Emitter Voltage


    Original     		PDF ZDT6753 OT223) T6753 100MHz 500mA, FZT653 -50mA, -500mA, -100mA, t6753 transistor ic1A ic1a ZDT6753 FZT753 DSA003725

    ZTX855

    Abstract: VCB-200V DSA003778
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX855 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 0.88 1 V IC=4A, VCE=5V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio


    Original     		PDF ZTX855 100mA, 50MHz 100mA Am100 100ms ZTX855 VCB-200V DSA003778

    ZTX658

    Abstract: NPN Transistor TO92 5V 200mA DSA003772
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX658 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. Transition Frequency fT TYP. MAX. UNIT 50 Collector-Base Breakdown Voltage Cobo Switching times ton toff


    Original     		PDF ZTX658 20MHz 100mA, -20mA 100ms ZTX658 NPN Transistor TO92 5V 200mA DSA003772

    FMMT497

    Abstract: FMMT597 0401mA DSA003696
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE FMMT497 ISSUE 3 – DECEMBER 1995 TYPICAL CHARACTERISTICS 0.6 0.6 +25 ° C 0.5 1mA 10mA 100mA 1A 0.1 Collector-Base Voltage Collector-Emitter Voltage 10mA 1mA 100mA 1A IC-Collector Current VCE sat v IC V+-=10V 0.9 +100 °C


    Original     		PDF FMMT497 100mA 100mA, 250mA, 100MHz FMMT497 FMMT597 0401mA DSA003696

    base resistance for SOT23

    Abstract: FMMT491 FMMT591 DSA003695
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT491 FMMT491 ISSUE 3 - OCTOBER 1995 ✪ FEATURES * Low equivalent on-resistance; RCE sat 210mΩ at 1A TYPICAL CHARACTERISTICS E C 0.6 0.6 +25 ° C 0.5 0.5 0.4 0.4 0.3 COMPLEMENTARY TYPE PARTMARKING DETAIL -


    Original     		PDF FMMT491 FMMT591 500mA, 100MHz base resistance for SOT23 FMMT491 FMMT591 DSA003695

    T1048

    Abstract: ZDT1048 DSA003723 zetex t1048
    Text: SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT1048 ISSUE 2 - FEBRUARY 1996 C1 B1 C1 E1 C2 B2 C2 E2 SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T1048 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage


    Original     		PDF ZDT1048 OT223) T1048 100mV 100mA 50MHz T1048 ZDT1048 DSA003723 zetex t1048

    Untitled

    Abstract: No abstract text available
    Text: ZTX656 Not Recommended for New Design Please Use ZTX657 NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX656 ZTX657 ISSUE 2 – JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt TYPICAL CHARACTERISTICS 1.8 100 hFE - Normalised Gain %


    Original     		PDF ZTX656 ZTX657 ZTX657 IC/10 100ms

    ZTX657

    Abstract: ZTX656 DSA003772
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX656 ZTX657 ISSUE 2 – JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt TYPICAL CHARACTERISTICS 1.8 100 hFE - Normalised Gain % 1.6 VCE(sat) - (Volts) 1.4 1.2 IC/IB=10


    Original     		PDF ZTX656 ZTX657 100mA, ZTX657 ZTX656 DSA003772

    FMMT495

    Abstract: DSA003696
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR FMMT495 ISSUE 3 - NOVEMBER 1995 PARTMARKING DETAIL – FMMT495 ✪ 495 TYPICAL CHARACTERISTICS 0.4 B 0.4 +25 ° C I+/I*=10 0.3 0.3 ABSOLUTE MAXIMUM RATINGS. -55 ° C +25 ° C +100 ° C I+/I*=10


    Original     		PDF FMMT495 100mA 100ms 250mA, 500mA, 100MHz FMMT495 DSA003696

    ZTX853

    Abstract: DSA003778
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX853 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 830 950 V IC=4A, VCE=2V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio


    Original     		PDF ZTX853 100mA, 50MHz 100mA 100ms ZTX853 DSA003778

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT494 ISSUE 3 - NOVEMBER 1995 PARTMARKING DETAIL – TYPICAL CHARACTERISTICS FMMT494 ✪ 494 E C 0.4 0.4 I+/I*=10 +25 ° C 0.3 B 0.3 0.2 0.1 0.1 280 10mA 100mA 1A 10A 1mA 10mA 100mA 1A IC-Collector Current


    Original     		PDF FMMT494 100mA 100ms 250mA, 500mA,

    100mA-1A

    Abstract: FMMT591A npn 41A FMMT491A DSA003696 1A-10A
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT491A FMMT491A ISSUE 3 – OCTOBER 1995 FEATURES * Very Low Equivalent Resistance, RCE sat 195mΩ at 1A TYPICAL CHARACTERISTICS 0.5 0.5 +25°C 0.4 -55° C +25° C +100° C 0.3 I+/I*=10 I+/I*=50 I+/I*=100


    Original     		PDF FMMT491A 100mA 100ms 100us FMMT591A 500mA, 100MHz 100mA-1A FMMT591A npn 41A FMMT491A DSA003696 1A-10A

    FZT757

    Abstract: 200V 100MA NPN t6757 FZT657
    Text: Obsolete. Nearest alternative is ZDT6753 SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6757 ZDT6757 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS at Tamb = 25°C . NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T6757


    Original     		PDF ZDT6753 ZDT6757 T6757 OT223) -10mA, -160V, -200V, -100mA, -10mA* FZT757 200V 100MA NPN t6757 FZT657

    FMMT494

    Abstract: DSA003696
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT494 ISSUE 3 - NOVEMBER 1995 PARTMARKING DETAIL – TYPICAL CHARACTERISTICS FMMT494 ✪ 494 E C 0.4 0.4 I+/I*=10 +25 ° C B 0.3 0.3 0.2 0.1 0.1 280 10mA 100mA 1A 10A 1mA 10mA 100mA 1A IC-Collector Current


    Original     		PDF FMMT494 100mA 50age 100ms 250mA, FMMT494 DSA003696

    FMMT618

    Abstract: No abstract text available
    Text: SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISSUE 3 - NOVEMBER 1995 FEATURES * 625mW POWER DISSIPATION * * * * * IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Voltage E.g. 8mV Typ.


    Original     		PDF FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 625mW FMMT617 FMMT717 FMMT718 FMMT618

    ZTX696B

    Abstract: transistor 3247 DSA003773 ZTX696
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX696B ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER Transition Frequency SYMBOL fT Input Capacitance Output Capacitance Switching Times Cibo Cobo ton toff MIN. 70 TYP. MAX. 200 6 80 4400 UNIT


    Original     		PDF ZTX696B 50MHz 100mA, 100mA 100ms ZTX696B transistor 3247 DSA003773 ZTX696

    Darlington pair IC

    Abstract: marking cb b54 marking MPT3 MARKING DF ad marking diagram
    Text: Transistors For Medium Power Amplification Part No. Package SST3 SMT3 SSTA56 MMSTA56 BV cbO BVceO BVebo Min. Min. M in. 80V I I 80V , 4V Ic b o @Vcb . ^ @IC & VCE VUE 8aÖ Mm. Max. Max. Max. , 100nA 80V , . 100 10mA 1V 100 100mA 1V & VM (Sat Max. 0.25V


    OCR Scan     		PDF SSTA56 MMSTA56 100nA 100mA 500mA 100mA 50MHz MMSTA64 Darlington pair IC marking cb b54 marking MPT3 MARKING DF ad marking diagram

    2M5087

    Abstract: 2M4401 2N3904 A31 NPS3704 2N3904 A38 NPN CBO 40V CEO 25V EBO 5V FN2222 2N3904 die TO92 30v 800ma 500ma 40v pnp
    Text: U.S. European Type Series TO-92 •Package style and dimensions : mm T O -9 2 JEDEC Standards Numbers) A.B± 0.2 3.7 ± 0.2 NPN Transistors Electrical characteristics of each Part No. can be looked up from the data of DIE No.


    OCR Scan     		PDF 100nA 200mA 2N2925 2N3711 MPS3711 2N3860 2N5088 160MHz 100mA 2M5087 2M4401 2N3904 A31 NPS3704 2N3904 A38 NPN CBO 40V CEO 25V EBO 5V FN2222 2N3904 die TO92 30v 800ma 500ma 40v pnp

    NPN CBO 40V CEO 25V EBO 5V

    Abstract: MMST8598
    Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SMT SST1130 MMST1130 BV cbo BVceo Min. Min. 30V 25V Vce (sat) BV ebo '“ ° @VCB . hff. @lc & Vce Min. Max. Min. Max. Max.


    OCR Scan     		PDF OT-23) 200mA SC-59/Japanese SST1130 MMST1130 SST5088 MMST5088 100nA 50MHz NPN CBO 40V CEO 25V EBO 5V MMST8598

    Untitled

    Abstract: No abstract text available
    Text: U.S. European Type Series TO-92 •P ackage style and dimensions Unit : mm T O -9 2 (JEDEC Standards Numbers) 4.6±0.2 3.7±0.2 NPN Transistors Electrical characteristics of each Part No. can be looked up from the data of DIE No. ■G eneral purpose small signal amplifiers


    OCR Scan     		PDF 2N2925 100nA 2N3711 MPS3711 MPS-A65 100nA 100mA 100MHz

    MPS-004

    Abstract: MPS004 2N4125 EBC 2n3704
    Text: T ransistors TO-92 JEDEC Standards Numbers #NPN Transistors General purpose small signal amplifiers Part No. Package BVcbo Min. BVceo Min. BVebo Min. iCBO Max. @VCB Min. Max. @lc & Vce V ce (sat) Max. 4 Vbe (sat) Max. @lc Cob Max. Min. 10pF 180MHz fr @ Ic


    OCR Scan     		PDF 2N2925 2N3711 MPS3711 2N3860 100nA 180MHz 200mA MPS-A63 MPS-004 MPS004 2N4125 EBC 2n3704

    sot23 marking code 8pf

    Abstract: marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5
    Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SST1130 SMT MMST1130 BVcbo BVceo BV ebo @VC8 ui Min. Min. Min. Max. Min. Max. 30V 25V 5V 50nA 20V 120 360 60 ^ ^ce 2mA 1V


    OCR Scan     		PDF OT-23) SC-59/Japanese SST1130 MMST1130 200mA SST5088 MMST5088 100nA SST5089 sot23 marking code 8pf marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5

    GES5819

    Abstract: GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPSA55
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device bv ceo Type @ 10mA- V Min. VCE(sat) 1F E Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30


    OCR Scan     		PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20S6535 100mA) MPSA20 MPSA55