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    VC-12 SWITCH FABRIC Search Results

    VC-12 SWITCH FABRIC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    DG301AAA Rochester Electronics DG301AAA - CMOS Analog Switch Visit Rochester Electronics Buy
    ICL7660SMTV Rochester Electronics LLC Switched Capacitor Converter, 0.02A, 17.5kHz Switching Freq-Max, CMOS, MBCY8, PACKAGE-8 Visit Rochester Electronics LLC Buy

    VC-12 SWITCH FABRIC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EPD controller

    Abstract: diode marking code HP2 MB86681 PA10 PA12 PA15 PA16 PA18 SQFP208 LZ 173 relay
    Text: Datasheet December 1997 Version 1.1 MB86681 ATM Switch Element SRE-L FML/NPD/SRE-L/DS/1223 The FUJITSU MB86681 is a Self-Routing switch Element (SRE-L) for use in ATM switch fabrics. It is ideally suited to applications in a variety of customer premises equipment such


    Original     		PDF MB86681 FML/NPD/SRE-L/DS/1223 MB86681 SQFP208 D-63303 FML/NPD/SRE-L/DS/1223 EPD controller diode marking code HP2 PA10 PA12 PA15 PA16 PA18 SQFP208 LZ 173 relay

    Untitled

    Abstract: No abstract text available
    Text: GaAs Broadband DPDT Diversity Switch Features This part delivers isolation greater than 33 dB and insertion loss less than 1.2 dB across the band. Designed for high power, this DPDT switch maintains high linearity up to 6 GHz. The MASWSS0094 is fabricated using a 0.5 micron


    Original     		PDF MASWSS0094 MASWSS0094

    capacitor 30 pf

    Abstract: No abstract text available
    Text: GaAs Broadband DPDT Diversity Switch Features This part delivers isolation greater than 33 dB and insertion loss less than 1.2 dB across the band. Designed for high power, this DPDT switch maintains high linearity up to 6 GHz. The MASWSS0094 is fabricated using a 0.5 micron


    Original     		PDF MASWSS0094 MASWSS0094 capacitor 30 pf

    Antenna Diversity insertion loss

    Abstract: No abstract text available
    Text: GaAs Broadband DPDT Diversity Switch Features This part delivers isolation greater than 33 dB and insertion loss less than 1.2 dB across the band. Designed for high power, this DPDT switch maintains high linearity up to 6 GHz. The MASWSS0094 is fabricated using a 0.5 micron


    Original     		PDF MASWSS0094 MASWSS0094 11b/g Antenna Diversity insertion loss

    CRC-32

    Abstract: MPC750 RFC2684
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. AAL-5 Fabric Port SAR to Gigabit Ethernet Switch Application Guide C-WARE SOFTWARE TOOLSET, VERSION 2.4 CSTAA5F2G-UG/D Rev 04 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Features MASWSS0039 The MASWSS0039 is fabricated using a 0.5 micron gate length GaAs PHEMT process. The process features full passivation for performance and reliability. Absolute Maximum Ratings 1 Parameter Absolute Maximum Max Input Power 3V Control +32 dBm


    Original     		PDF MASWSS0039 12-lead MASWSS0039 12lead MASWSS0039-TR MASWSS0039-SMB

    OC 39

    Abstract: No abstract text available
    Text: The MASWSS0040 is fabricated using a 0.5 micron gate length GaAs pHEMT process. The process features full passivation for performance and reliability. Ordering Information Part Number MASWSS0040TR Package 7 inch, 1000 piece reel 1 MASWSS0040TR-3000 13 inch, 3000 piece reel


    Original     		PDF MASWSS0040 12-lead MASWSS0040 OC 39

    MASWSS0020

    Abstract: MASWSS0020SMB MASWSS0020TR
    Text: GaAs SP4T 2.5V High Power Switch DC - 3 GHz Preliminary Features GND V4 PIN 1 RF4 V1 RF1 Description 39 pF GND 39 pF The MASWSS0020 is fabricated using a 0.5 micron gate length GaAs PHEMT process. The process features full passivation for performance and reliability.


    Original     		PDF 16-lead MASWSS0020 MASWSS0020 MASWSS0020TR MASWSS0020SMB MASWSS0020SMB MASWSS0020TR

    DSLAM configuration AWS

    Abstract: rx bc nbk TSC 13003 pcr 465 ATML 18751 circuit BKC International mpc82 bsdl nd1 marking code acm 33221
    Text: MC92520 ATM Cell Processor User’s Manual MC92520UM/D Rev. 0, 12/2000 DigitalDNA and Mfax are trademarks of Motorola, Inc. Information in this document is provided solely to enable system and software implementers to use Motorola microprocessors. There are no express or implied copyright licenses granted hereunder to design or fabricate Motorola integrated circuits or integrated


    Original     		PDF MC92520 MC92520UM/D DSLAM configuration AWS rx bc nbk TSC 13003 pcr 465 ATML 18751 circuit BKC International mpc82 bsdl nd1 marking code acm 33221

    resonant full bridge schematic dsp

    Abstract: No abstract text available
    Text: UC2875ĆEP PHASE SHIFT RESONANT CONTROLLER ą ą SGLS233 − FEBRUARY 2004 D Controlled Baseline D D D D D D D D D D D D D D D − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −25°C to 110°C Enhanced Diminishing Manufacturing


    Original     		PDF UC2875EP SGLS233 resonant full bridge schematic dsp

    resonant full bridge schematic dsp

    Abstract: No abstract text available
    Text: UC2875ĆEP PHASE SHIFT RESONANT CONTROLLER ą ą SGLS233A − FEBRUARY 2004 − REVISED DECEMBER 2008 D Controlled Baseline D D D D D D D D D D D D D D D − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −25°C to 110°C


    Original     		PDF UC2875EP SGLS233A resonant full bridge schematic dsp

    self resonant driver

    Abstract: UC2875 UC2875SDWREP RESONANT CONTROLLER resonant full bridge schematic dsp
    Text: UC2875ĆEP PHASE SHIFT RESONANT CONTROLLER ą ą SGLS233 − FEBRUARY 2004 D Controlled Baseline D D D D D D D D D D D D D D D − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −25°C to 110°C Enhanced Diminishing Manufacturing


    Original     		PDF UC2875EP SGLS233 self resonant driver UC2875 UC2875SDWREP RESONANT CONTROLLER resonant full bridge schematic dsp

    Untitled

    Abstract: No abstract text available
    Text: <p Preliminary Datasheet FUJITSU S e p te m b e r 1996 V ersion 0.8 MB86681 ATM Switch Element SRE-L FM L/NPD/SRE-L/DS/1223 The FUJITSU MB86681 is a Self-Routing switch Element (SRE-L) for use in ATM switch fabrics. It is ideally suited to applications in a variety of customer premises equipment such


    OCR Scan     		PDF MB86681 L/NPD/SRE-L/DS/1223 MB86681

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC7S66F/FU Bilateral Switch The TC7S66 is a high speed C2MOS Bilateral Switch fabricated with sili­ con gate C2MOS technology. It consists of a high speed switch capable of controlling either digital or analog signals while maintaining the C2MOS low power dissipation.


    OCR Scan     		PDF TC7S66F/FU TC7S66

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC7W 66F/FU Dual Bilateral Switch The TC7W66 is a high speed C2MOS Dual Bilateral Switch fabricated with silicon gate C2MOS technology. It consists of four independent high speed switches capable of con­ trolling either digital or analog signals while maintaining the C2MOS low


    OCR Scan     		PDF 66F/FU TC7W66 2757R

    pen drive amplifier circuit diagrams

    Abstract: optical sensor switch pir sensor light dark sensor 4908A SLR-932A LV9005M MFP24S OTV92194TH PULSE MODE CURRENT SOURCE IC transistor npn for 12 v
    Text: Ordering number : EN 4908A BiCMOS LSI LV9005M Optical Sensor Switch IC Overview The LV9005M is an optical sensor switch IC that is fabricated in a medium breakdown voltage BiCMOS process. The LV9005M circuit structure includes a highgain optical sensor amplifier, a comparator, an oscillator


    OCR Scan     		PDF LV9005M LV9005M pen drive amplifier circuit diagrams optical sensor switch pir sensor light dark sensor 4908A SLR-932A MFP24S OTV92194TH PULSE MODE CURRENT SOURCE IC transistor npn for 12 v

    ca 1207

    Abstract: No abstract text available
    Text: Product Flyer August 1996 MB86681 Version 2.0 ATM Switch Element SRE-L FML/NPD/SRE-L/FL/1207 The Fujitsu MB86681 is a Self-Routing switch Element (SRE-L) for use in ATM switch fabrics. The device is organized a s a 4 x 4 s w itc h with separate input and output ports running up to 320M bps for matrix expan­


    OCR Scan     		PDF MB86681 FML/NPD/SRE-L/FL/1207 MB86681 32x32 64x64 10Gbps) L/NPD/SRE-L/FL/12 ca 1207

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA LOGIC/MEMORY IME D I ^ 7 5 4 0 TC74HC4066P/F- 0010555 T | '-SI-11 TC74HC4066P/F QUAD BILATERAL SWITCH The TC74HC4066 is a high speed CMOS QUAD BILATERAL SWITCH fabricated w i t h silicon g a t e C^MOS technology. It consists of four independent high speed switches capable of controlling either


    OCR Scan     		PDF TC74HC4066P/F-------- -SI-11 TC74HC4066P/F TC74HC4066

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC7W66F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7W66F, TC7W66FU UNDER DEVELOPMENT DUAL BILATERAL SWITCH The TC7W66 is a high speed CMOS DUAL BILATERAL SWITCH fabricated with silicon gate CMOS technology. It consists of four independent high speed switches


    OCR Scan     		PDF TC7W66F/FU TC7W66F, TC7W66FU TC7W66 600ft,

    Untitled

    Abstract: No abstract text available
    Text: 19-0180; Rev 0; 9/93 V M ^ X IV M Precision, Quad, SPST Analog S w itches The MAX361/MAX362 are fabricated with Maxim’s new improved 44V silicon-gate process. Design improve­ m en ts g u a ra n te e e x tre m e ly low c h a rg e injection 10pC , low power consumption (35nW), and electro­


    OCR Scan     		PDF MAX361/MAX362 361/M

    Untitled

    Abstract: No abstract text available
    Text: S EM IC O N D U C T O R KIC7W66FK TECHNI CAL DATA SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT D UAL B ILA TER A L SW ITCH The K IC 7W 66FK is a high speed C 2M O S D U A L BILA TER A L SW ITC H fabricated w ith silicon gate C 2M OS technology. It consists o f four independent high speed sw itches capable o f


    OCR Scan     		PDF KIC7W66FK KIC7W66FK

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC7S66F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7S66F, TC7S66FU BILATERAL SWITCH The TC7S66 is a high Speed C2MOS BILATERAL SWITCH fabricated with silicon gate C^MOS technology. It consists of a high speed switch capable of controlling


    OCR Scan     		PDF TC7S66F/FU TC7S66F, TC7S66FU TC7S66 SSOP5-P-0-65A

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TC7S66F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7S66F, TC7S66FU BILATERAL SWITCH The TC7S66 is a high Speed C2MOS BILATERAL SWITCH fabricated with silicon gate C2MOS technology. It consists of a high speed switch capable of controlling


    OCR Scan     		PDF TC7S66F/FU TC7S66F, TC7S66FU TC7S66

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC7W53F/FU/FK TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7W53F, TC7W53FU, TC7W53FK 2-CHANNEL MULTIPLEXER / DEMULTIPLEXER The TC7W53 is a high speed CMOS ANALOG MULTIPLEXER/DEMULTIPLEXER fabricated with silicon gate CMOS technology.


    OCR Scan     		PDF TC7W53F/FU/FK TC7W53F, TC7W53FU, TC7W53FK TC7W53