Untitled
Abstract: No abstract text available
Text: Satellite Systems Part numbers link to product information Receiver itter Diplexer Switch AGC Amp B LNA BPF L. O. G BPF AGC Amp LNA Demodulator Block Converter Demodulator IF Amp Block Converter D Tunable PLL D L. O. Tunable PLL SMS3926 Series SMS7621-040LF
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SMS3926
SMS7621-040LF
SMS7621-079LF
SMV1142-011LF
SMV1265-011LF
SMV1430-079LF
SMV2019-079LF
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high capacitance varactor 1nF AM
Abstract: varactor 1nF AM LTC1340 LTC1429
Text: u f m LTC 1340 TECHNOLOGY Low Noise, Voltage-Boosted V aractor Driver KOTUfKS DCSCRIPTIOfl • Generates 5V Varactor Drive from a 3V Supply The LTC 1340 is avaractor diode driver designed to generate 5V varactor drive from a single 3V or higher voltage supply.
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LTC1340
LTC1429,
LTC1550
LTC1551
high capacitance varactor 1nF AM
varactor 1nF AM
LTC1429
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MA87729-M01
Abstract: No abstract text available
Text: an A M P com pany Varactor Controlled Oscillator Transceiver 24.150 GHz MA87729-M01 V3.00 Features -1 .0 5 0 M AX. 26.67 ^ BT VARACTOR ~ BIAS • In exp en siv e K -b an d T ia n s c e iv e r +V B IA S ^ r-o* 78) • Can b e EM M od u lated 0.810 MAX.
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MA87729-M01
UG-595/U
MA87729-M01
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Untitled
Abstract: No abstract text available
Text: Tuning Varactor SELECTION GUIDE. 5-3 MODEL NUMBER PAGE MA45228 . MA45234 MA45235 MA45236 MA45237 MA45241 . ittio li • MA45249 MA45250 MA45252 MA45253 MA45254 MA45255 MA45257 MA45258 MA45259 MA45260 MA45261 MA45262 MA45263 MA45264 MA45265
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MA45274
MA45275
MA45276
IA45277
A45278_
MA45279
MA45280
MA45290
MA45291
MA4ST552.
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Untitled
Abstract: No abstract text available
Text: Ordering num ber : ENN6966 Silicon Diffused-Junction Type EC2C01C iSMlYOl VCXO & VHF Band VCO Applications Varactor Diode Features Package Dimensions • High capacitance ratio. C R C l ,( V / C4.0V)=5.0typ unit : mm • Ultrasmall-si/ed packagc(i008), slim package
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ENN6966
EC2C01C
EC2C01C]
ECSP1008-2
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C1648
Abstract: 0.1pf varactor loral pin diodes tank oscillator circuit 5v MC1648
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low-Power Voltage Controlled Oscillator MC12148 The MC12148 requires an external parallel tank circuit consisting of the inductor L and capacitor (C). A varactor diode may be incorporated into the tank circuit to provide a voltage variable input for the oscillator
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MC12148
MC1648.
GC1500
DVH6730
BR1334
C1648
0.1pf varactor
loral pin diodes
tank oscillator circuit 5v
MC1648
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HMC131
Abstract: No abstract text available
Text: HITTITE MICROWAVE CORPORATION GaAs MMIC Buffered C-Band VCO HMC131 JUNE 1996 Features 1 GHz TUNING RANGE SINGLE +5V SUPPLY OPERATION NO EXTERNAL VARACTOR REQUIRED General Description The HMC131 chip is a C-Band VCO with on-chip buffering for improved load iso
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HMC131
HMC131
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ma87811
Abstract: No abstract text available
Text: an A M P com pany Varactor Controlled Oscillator 21.20 - 23.60 GHz MA87811 V3.00 Features • • • • • Low Cost Excellent Tuning Linearity ±0.03% Frequency vs. Temperature Stability Small and Lightweight Modulation and External AFC Control Can be Commonly Applied to Electronic Tuning Bias
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MA87811
ma87811
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1N5718
Abstract: No abstract text available
Text: VARACTOR SELECTO R GUIDE Series Capacitance 1-IOOpf > 100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 >100 Leakage Current low Cost Comments <10nA < 1 .0M* Replaces MV830-MV840 DO-7 G lass CV830CV840 X C V1006-16CV1106-16 X X CV1620CV1650 X X X X
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100pf
CV830-CV840
MV830-MV84G
CV1006-16-CV1106-16
FV1006-16,
FV1106-16
CV1620-CV1650
MV1620-MV1650
CV1652-CV1666
MV1652-MV1666
1N5718
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CV1664
Abstract: DO-14 diode VA51 VA521
Text: VARACTOR SELECTO R GUIDE Series Capacitance 1-IOOpf >100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 >100 Leakage Current low Cost Comments <10nA <1.0M* Replaces M V830-M V840 DO-7 G lass CV830CV840 X CV1006-16CV1106-16 X X CV1620CV1650 X X X X X
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100pf
CV830-CV840
MV830-MV84G
CV1006-16-CV1106-16
FV1006-16,
FV1106-16
CV1620-CV1650
MV1620-MV1650
CV1652-CV1666
MV1652-MV1666
CV1664
DO-14 diode
VA51
VA521
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vto8200
Abstract: hp 8200 diode VTO-8090
Text: What H E W L E T T * mLliM PA C K A R D Varactor-Tuned O scillators Technical Data VTO-8OOO Series Features • 600 MHz to 10.5 GHz Coverage • Fast Tuning • +7 t o +13 dBm Output Power • ± 1.5 dB Output Flatness • Hermetic Thin-film Construction Description
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TF-801
TF-802
vto8200
hp 8200 diode
VTO-8090
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WR90
Abstract: transistor A 935 varactor diode 24V CL8300 Gunn Oscillator WR90 cl8630 radar gunn diode gunn effect 935 schottky diode Gunn Diode
Text: Microwave solid state tuning varactor diodes book 1 part 8 a c 11 h Ty p e No. Description q o £ M in. Capacitance R atio CT 0V C T 60V Capacitance at V r 4 V m in . m ax. <pF BXY53 BXY54 BXY6S Silico n planar epitaxial tuning devices SOD-31 N 4 .0 6 .5
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BXY54
SOO-31
CXY23A
CXY23B
CXY23C
CXY23D
OD-31
CL7500
WG16/WR90
CL7520
WR90
transistor A 935
varactor diode 24V
CL8300
Gunn Oscillator WR90
cl8630
radar gunn diode
gunn effect
935 schottky diode
Gunn Diode
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magnum microwave
Abstract: No abstract text available
Text: 4ÔE T> fi AG NU n MICROWAVE CORP S75273D 0 0 00 1 5 3 b • HNC HV87T-1 VCO 2 .0 VOLTAGE CONTROLLED OSCILLATOR HYPERA3RJPT VARACTOR INTEGRAL BUFFER AMPLIFIER to 4 .0 ELECTRICAL S P E C IFIC A TIO N S :^ • ' +20- Frequency 2.0 to 4.0 GHz Power Output at 25*C 50 ohm load
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S75273D
HV87T-1
HV67T-1
magnum microwave
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LTC1340
Abstract: LTC1429
Text: u i LTC134Q m TECHNOLOGY Low N oise, V o lta g e -B o o ste d V a ra c to r Driver F€flTUR€S D€SCRIPTIOf • G ene rate s 5V Varactor Drive from a 3 V Supply ■ Wide Supply Voltage Range: 2.7V to 6V ■ Req uires O n ly Three Extern al Com ponents
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LTC134Q
500kHz
152mm)
254mm)
LTC1261,
LTC1429,
LTC1550,
LTC1551
1340f
LTC1340
LTC1429
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SP1648
Abstract: SP1648DP DSP1648 plessey 241 B7BB P3400A oscillator plessey
Text: PLESSEY SE MICON DUC TORS TS DE 1 72EDS13 QQQt.7bl 1 | ~ 7220513 P L E S S E Y S E M I C O ND U C T OR S PLESSEY 95D 06761 D T'SO-/s S e m ic o n d u c to rs . SP1648 ECL OSCILLATOR The SP1648 is an em itter-coupled oscillator, constructed on a single m onolithic silicon chip. O utput levels are
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72EDS13
SP1648
SP1648
SP1648,
100MHz
SP1648.
SP1648DP
DSP1648
plessey 241
B7BB
P3400A
oscillator plessey
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Untitled
Abstract: No abstract text available
Text: GEC PLESSEY SEMICONDS 43E D • 3 7 b ö S S S GGlS'ihl H B P L S B GEC P L E S S E Y I S E M I C O N D U C T O R ~ S ~ ~ f. 3028-1.0 SP1648 ECL OSCILLATOR The SP1648 is an em itter-coupled oscillator, constructed on a single m onolithic silicon chip. O utput levels are
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SP1648
SP1648
SP1648,
100MHz
SP1648.
T-50-15
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MC1648 equivalent
Abstract: AN-532a an532a motorola application notes MC1648 MC1648 internal schematic tag c2 680 800 "Varactor Diode" symbol of varactor diode and equivalent circuit MC1600
Text: L O G IC D I A G R A M S continued 2 OSCILLATOR I—MULTIVIBRATOR M C I 6 48 E m itte r C o u p le d O s c illa to r M C 1658 V o Itage-Co litr o I led M u ltiv ib ra to r C xi CX2 V c c = Pins 1, 14 V EE = Pins 7, 8 V CC1 - 1 V CC2 " a ' n 5 V ee = |J'n 6
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MC1651
MC1650)
MC1651)
MC1648
10MHz
MC1648 equivalent
AN-532a
an532a
motorola application notes
MC1648
MC1648 internal schematic
tag c2 680 800
"Varactor Diode"
symbol of varactor diode and equivalent circuit
MC1600
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1200 ohm RESISTOR
Abstract: CT075 1648l C1648
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA V oltage Controlled O scillator M C1648 Consider MC12148 for New Designs The MC1648 requires an external parallel tank circuit consisting of the inductor L and capacitor (C). For Maximum Performance Q|_ a 100 at Frequency of Operation.
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MC12148
MC1648
0-35p
10MHz
470pF
24-200pF
i-10k
1200 ohm RESISTOR
CT075
1648l
C1648
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Untitled
Abstract: No abstract text available
Text: S i GEC PLESSEY S I M I O IS I l ( T O ADVANCE INFORMATION U S D.S. 3514 2.3 SP5058 2.6GHz 3-WIRE BUS SYNTHESISER (Supersedes December 1992 Edition DS3514 1.2) The SP5058 is a single chip frequency synthesiser designed fortuning systems up to 2.6GHz requiring high loop
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SP5058
DS3514
SP5058
37bflS22
002G7b0
SP5022,
00207bl
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MC 151 transistor
Abstract: varactor diode AM
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Power Voltage Controlled Oscillator Buffer The MC12149 is intended for applications requiring high frequency signal generation up to 1300MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using
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MC12149
1300MHz.
C12149
MC12202
10dB/
10MHz
200ms
BR1334
MC12149
MC 151 transistor
varactor diode AM
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transistor qz
Abstract: construction of varactor diode
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Power Voltage Controlled Oscillator Buffer The M C 12147 is intended for applications requiring high frequency signal generation up to 1300MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using
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MC12147
1300MHz.
C12147
MC12202
1200M
10dB/
909MHz
200ms
BR1334
transistor qz
construction of varactor diode
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LA1132
Abstract: varactor diode time switch varator diode varactor diode IF AMP RADIO la1130 varactor diode AM pin diode cross reference LA1135 LA1150 rf fet cross reference
Text: SA N Y O S E M I C O N D U C T O R LA 11 3 0 CORP 7t. ” 0001Ô35 1 DE ¿>,r CIRCUIT DRAWING NO.SP01 monolithic linear 1C AM TUNER SYSTEM FOR CAR RADIO Functions • RF amp. ■ D etector ■ ■ M ixer Norm al A G C " ■ Features ■ Single end packaging makes space useful.
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50ISI
LA1150)
3060B
LA1150N)
LA1150
LA1150N.
LA1t50:
LA1150N:
LA1132
varactor diode time switch
varator diode
varactor diode
IF AMP RADIO la1130
varactor diode AM
pin diode cross reference
LA1135
rf fet cross reference
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C 1648 V oltage C ontrolled O scillato r Consider MC12148 for New Designs The MC1648 requires an external parallel tank circuit consisting of the inductor L and capacitor (C). For Maximum Performance Q l £ 100 at
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MC12148
MC1648
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varactor diode
Abstract: varactor diode AM FET differential amplifier circuit Am tuning DIODE LA1132 pin diode cross reference varactor diode time switch LA1150
Text: SA N Y O S E M I C O N D U C T O R LA 11 3 0 CORP 7t. ” 0001Ô35 1 DE ¿>,r CIRCUIT DRAWING NO.SP01 monolithic linear 1C AM TUNER SYSTEM FOR CAR RADIO Functions • RF amp. ■ D etector ■ ■ M ixer Norm al A G C " ■ Features ■ Single end packaging makes space useful.
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wide25dB/i
50ISI
LA1150)
3060B
LA1150N)
LA1150
LA1150N.
LA1t50:
LA1150N:
varactor diode
varactor diode AM
FET differential amplifier circuit
Am tuning DIODE
LA1132
pin diode cross reference
varactor diode time switch
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