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    F2683

    Abstract: No abstract text available
    Text: That HEWLETT mi/LMPACKARD 2-16 GHz General Purpose Gallium Arsenide FET Technical Data A TF-26836 F e a tu r e s D escrip tio n • High Output Power: 18.0 dBm Typical Pj dB at 12 GHz The ATF-26836 is a high perfor­ mance gallium arsenide Schottkybarrier-gate field effect transistor


    OCR Scan     		PDF TF-26836 ATF-26836 5965-8704E 44475A4 DD1771Ö F2683

    Untitled

    Abstract: No abstract text available
    Text: fX J !« H EW L E T T wLt M PA CK A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0786 Features Description • C ascadable 50 Q Gain B lock The MSA-0786 is a high perfor­ m ance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a low cost,


    OCR Scan     		PDF MSA-0786 MSA-0786

    Untitled

    Abstract: No abstract text available
    Text: What mLUM HEW LETT PACKARD Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41486 Features • Low N oise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High A ssociated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz


    OCR Scan     		PDF AT-41486 vailable111 AT41486 5965-8928E 5968-2031E

    Untitled

    Abstract: No abstract text available
    Text: W hnì HEW LETT m L'fià P A C K A R D 2 -1 6 GHz Low N oise Gallium Arsenide FET Technical Data ATF-13336 Features D escription • Low N oise Figure: 1.4 dB Typical at 12 GHz The ATF-13336 is a high perfor­ mance gallium arsenide Schottkybarrier-gate field effect transistor


    OCR Scan     		PDF ATF-13336 ATF-13336 44475A4 0D17baS

    P 1060 atf

    Abstract: No abstract text available
    Text: W hat H E W L E T T * mLliM P A C K A R D 0 .5 -6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-21186 F e atu re s D escription • Low N oise Figure: 0.5 dBTyp. @ 2 GHz • High Output Pow er: 19 dBmTyp. PldB @ 2 GHz • High MSG: 13.5 dBTyp. @ 2 GHz


    OCR Scan     		PDF ATF-21186 ATF-21186 mic162 Rn/50 ATF-21186-TR1 ATF-21186-STR P 1060 atf

    ATF-13736

    Abstract: No abstract text available
    Text: Whpl H E W L E T T müHM PA C K A R D 2 -1 6 GHz Low N oise Gallium Arsenide FET Technical Data ATF-13736 Features D escription • Low N oise Figure: 1.8 dB Typical at 12 GHz The ATF-13736 is a high perfor­ m ance gallium arsenide Schottkybarrier-gate field effect transistor


    OCR Scan     		PDF ATF-13736 ATF-13736 5965-8722E

    Untitled

    Abstract: No abstract text available
    Text: W TM H E W L E T T WL'Em P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0486 Features D escription • Cascadable 50 Q Gain Block The MSA-0486 is a high perfor­ mance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a low cost,


    OCR Scan     		PDF MSA-0486 MSA-0486 vailabl60 44475AM 5965-9578E

    Untitled

    Abstract: No abstract text available
    Text: T hal H E W L E T T mHiiM PA C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0986 F eatures D escription • Broadband, Minimum Ripple Cascadable 50 Q Gain Block The MSA-0986 is a high perfor­ m ance silicon bipolar M onolithic M icrowave Integrated Circuit


    OCR Scan     		PDF MSA-0986 MSA-0986 vailable11 5965-9552E

    AT42086-BLK

    Abstract: No abstract text available
    Text: What H E W L E T T * mLliM P A C K A R D Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42086 Features • High Output Power: 20.5 dBm Typical PldB at 2.0 GHz • High Gain at 1 dB Compression: 13.5dBTypicaIGldBat2.0 GHz • Low N oise Figure:


    OCR Scan     		PDF AT-42086 AT-42086 Rn/50 AT42086-BLK

    Untitled

    Abstract: No abstract text available
    Text: What H E W L E T T * mLliM PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Technical Data AT-41486 Features • Low N oise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High A ssociated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz


    OCR Scan     		PDF AT-41486 AT-41486 Rn/50

    Untitled

    Abstract: No abstract text available
    Text: What H E W L E T T * mLliM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0986 Features Description • Broadband, Minimum Ripple Cascadable 50 Q. Gain Block The MSA-0986 is a high perfor­ mance silicon bipolar Monolithic Microwave Integrated Circuit


    OCR Scan     		PDF MSA-0986 MSA-0986

    ST Z0 103 MA

    Abstract: No abstract text available
    Text: What HEW LETT* mLliM PACKARD 2-1 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 F e atu res • High Output Pow er: 18.0 dBm Typical Pi ¿s at 12 GHz • High Gain: 9.0 dB TypicalGssat 12 GHz • Low C ost P lastic Package • Tape-and-Reel Packaging


    OCR Scan     		PDF ATF-26884 ATF-26884 ST Z0 103 MA

    41411

    Abstract: transistor 41 74t transistor 45 f 122
    Text: Thal h e w le tt mL'fiÆ PACKARD « Surface M ount Low N oise Silicon Bipolar Transistor Chip Technical Data AT-41411 Features • Low N oise Figure: 1.4 dB Typical at 1.0 GHz 1.8 dB Typical at 2.0 GHz • High A ssociated Gain: 18.0 dB Typical at 1.0 GHz


    OCR Scan     		PDF AT-41411 AT-41411 OT-143 Rn/50 0017b2fl 41411 transistor 41 74t transistor 45 f 122

    chip die npn transistor

    Abstract: marking 4110 sot
    Text: What H E W L E T T * mLliM PACKARD Surface Mount Low N oise Silicon Bipolar Transistor Chip Technical Data AT-41411 Features • Low N oise Figure: 1.4 dB Typical at 1.0 GHz 1.8 dB Typical at 2.0 GHz • High A ssociated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz


    OCR Scan     		PDF AT-41411 sAT-41411 AT-41411 OT-143 techni411 Rn/50 chip die npn transistor marking 4110 sot

    Untitled

    Abstract: No abstract text available
    Text: What HEWLETT* mLliM PACKARD 2-1 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 F e atu res D escription • High Output Pow er: 18.0 dBm Typical Pi ¿s at 12 GHz The ATF-26836 is a high perfor­ mance gallium arsenide Schottkybarrier-gate field effect transistor


    OCR Scan     		PDF ATF-26836 ATF-26836 sy-25

    sot303

    Abstract: No abstract text available
    Text: Wfiït mitÍM HP AECWKLAERTDT Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • Amplifier Tested 900 MHz Performance: 1.3 dB NF,


    OCR Scan     		PDF AT-32063 OT-363 vailable111 OT-363 5665-1234E sot303

    Untitled

    Abstract: No abstract text available
    Text: Who HEW LAR ETDT mL'fiIM PACK Low Current, High Perform ance NPN Silicon Bipolar Transistor Technical Data AT-32063 F eatures Description • High Perform ance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains tw o high


    OCR Scan     		PDF AT-32063 OT-363 AT-32063 OT-363 5965-1234E 5965-8921E 4447SA4

    Untitled

    Abstract: No abstract text available
    Text: f T C f HEW LETT K“KM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0486 Features Description • C ascadable 50 Q Gain B lock The MSA-0486 is a high perfor­ mance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a low cost,


    OCR Scan     		PDF MSA-0486 MSA-0486

    MSA0986-BLK

    Abstract: No abstract text available
    Text: r /RiH E W L E T T m LiLm P a c k a r d Cascadable Silicon Bipolar MMIC A m plifier Technical Data MSA-0986 Features Description • B roadband, Minimum Ripple Cascadable 50 Q Gain Block T he MSA-0986 is a high p e rfo r­ m ance silicon b ip o la r M onolithic


    OCR Scan     		PDF MSA-0986 MSA-0986 MSA0986-BLK