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    VACTEC 21 Search Results

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    VTT-C50

    Abstract: Vactec
    Text: .S b E D BDaObO^ OOOllflD .050" NPN Phototransistor Chip 21b HI V C T VTT-C50 E G & 6 VACTEC DESCRIPTION CHIP DIMENSIONS inch mm EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion technology. All chips are nitride passivated to ensure long term


    OCR Scan     		PDF VTT-C50 2S50K) VTT-C50 Vactec

    Untitled

    Abstract: No abstract text available
    Text: SbE D BDBQbO^ ÜÜOllflO 21b H V C T VTT-C50 .050" NPN Phototransistor Chip [ fi ì fi VACT EC DESCRIPTION CHIP DIMENSIONS inch mm EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion technology. All chips are nitride passivated to ensure long term


    OCR Scan     		PDF VTT-C50 T-41-47 2850K)

    VTT3122E

    Abstract: VTT3121E VTT3123E
    Text: 5bE D • 3030^0^ 0001171 .025" NPN Phototransistors 50 3 H V C T VTT31 21 E, 2E, 3E Hermetic Coax Package w/ Emitter Lead E G & G VACTEC T—41—67 PACKAGE DIMENSIONS inch mm CASE 5 COAX HERMETIC (WITH CASE LEAD) CHIP TYPE: 25T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS H


    OCR Scan     		PDF 3Q30bà VTT31 T-41-61 VTE31xx 4001c VTT3121E VTT3122E VTT3123E

    Untitled

    Abstract: No abstract text available
    Text: 5bE D • 3D3DbDR DGOIOTS fibb VTS VTS-1 Process Photodiodes E HVCT 64, G & & VACTEC PRODUCT DESCRIPTION 65 T-41-51 PACKAGE DIMENSIONS inch mm Five cell arrays of large area planar silicon photodiodes primarily intended for use in the photovoltaic mode.


    OCR Scan     		PDF T-41-51 100mW/cm2

    Untitled

    Abstract: No abstract text available
    Text: SbE D • BQBQbO'i 5b2 H V C T VTS VTS-1 Process Photodiodes E G & G VACTEC PRODUCT DESCRIPTION T -41-51 PACKAGE DIMENSIONS inch mm Large area planar silicon photodiodes primarily intended for use in the photovoltaic mode. These devices have low series resistance, moderate


    OCR Scan     		PDF T-41-51 100fc,

    Untitled

    Abstract: No abstract text available
    Text: 5bE ]> 3 D 3 0 b m OOOIQ?1* D31 « V C T VTP4085, 5H, 5S VTP Process Photodiodes E 6 & G VACTEC T-4 1-5 1 PACKAGE DIMENSIONS inch mm CASE 13 CERAMIC CHIP ACTIVE AREA: .032 in2 (21 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode mounted on a two lead ceramic sub­


    OCR Scan     		PDF VTP4085, VTP40I5H VTP4015 VTP4015S 100/jW/cm2,

    Untitled

    Abstract: No abstract text available
    Text: SbE D aDaobDT ooGiiaa so? .060" NPN Phototransistors VTT1031, 32, 33 TO-46 Flat Window Package _ mvct - F -4 1 -G f E G & G VACTEC PACKAGE DIMENSIONS inch mm SO (1 2 .7 ) .1 5 4 (3 .9 1 ) , • No“ - - ‘ .1 7 8 (4 .5 2 ) .215 .205 (0 .5 1 ) C ASE 2


    OCR Scan     		PDF VTT1031, VTT1031 VTT1032 VTT1033 400fc

    VTP8440

    Abstract: VTP8441
    Text: SbE ]> • BOBGbG^ DGOlOfll 271 « V C T V T P 8 4 4 0 , 8441 VTP Process Photodiodes E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 21 P la n a r s ilic o n photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear


    OCR Scan     		PDF VTP8440, T-41-51 1001c, 8x1012 VTP8440 VTP8441

    Untitled

    Abstract: No abstract text available
    Text: SbE D • BQBQbO'i 5b2 H V C T VTS VTS-1 Process Photodiodes E G & G VACTEC PRODUCT DESCRIPTION T -41-51 PACKAGE DIMENSIONS inch mm Large area planar silicon photodiodes primarily intended for use in the photovoltaic mode. These devices have low series resistance, moderate


    OCR Scan     		PDF T-41-51 100fc,

    Untitled

    Abstract: No abstract text available
    Text: .060" NPN Phototransistors VTT1131, 3 2 , 33 TO-46 Lensed Package E G & G VACTEC T -4 Î-6 1 PACKAGE D IM EN SIO N S inch mm .206 (5 .2 3 ) •50 ( 12.7 ) 205 ( 5 .21) CASE 3 TO-46 HERMETIC (LENSED) CHIP TYPE: SOT ABSOLUTE M AXIMUM RATINGS fl PRODUCT DESCRIPTION


    OCR Scan     		PDF VTT1131, VTT1131 VTT1132 VTT1133

    Untitled

    Abstract: No abstract text available
    Text: SLE D • 3Q30t.0S QQ 01 0 5E 470 H V C T V TB 8443, 8444 [vTB Process Photodiodes E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 21 PRODUCT DESCRIPTION P la n a r s ilico n photodiode in a recessed ceramic package. Chip is coated with a protective layer of epoxy.


    OCR Scan     		PDF 3Q30t T-41-51 x1012 VTB8444 VTB8443 x1013

    Untitled

    Abstract: No abstract text available
    Text: SbE 3G3üb[n D GGD11GÔ VTS-3 Process Photodiodes E 244 «VCT VTS_ 70, 72, 75 G & G VACTEC PRODUCT DESCRIPTION r-90-oi PACKAGE DIMENSIONS inch mm Large area planar silicon photodiodes primarily intended for use in the photovoltaic mode. These devices have excellent response in the UV


    OCR Scan     		PDF GGD11GÃ r-90-oi 40/jW/cm2,

    Vactec

    Abstract: No abstract text available
    Text: 5b E D • aoaobm ooo im o VTS-1 Process Photodiodes 204 m v c t VTS 1 4, 18 £ 6 & G VACTEC PRODUCT DESCRIPTION PACKAGE DIMENSIONS inch mm Large area planar silicon photodiodes primarily intended for use in the photovoltaic mode. These devices have low series resistance, moderate


    OCR Scan     		PDF 303DbD' T-41-51 Vactec

    photodiode ge

    Abstract: VTP4085
    Text: 5bE a o a O b O 1! D 0 Ü1 G7 4 Ü31 • VCT J> VTP Process Photodiodes V T P4 085 , 5H, 5S E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 13 CERAMIC CHIP ACTIVE AREA: .032 in2 (21 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode mounted on a two lead ceramic sub­


    OCR Scan     		PDF D0D1Q74 VTP4085, T-41-51 vtp40i5 vtp4085s 1001c, photodiode ge VTP4085

    k 2134

    Abstract: Vactec 4202 BD "1050 nm"
    Text: 5 Li E D m BDBDEsQR O G OI O^S ôbb VTS VTS-1 Process Photodiodes E G & G «VCT 64, VACTEC 65 T -4 1 -5 1 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Five cell arrays of large area planar silicon photodiodes primarily intended for use in the photovoltaic mode.


    OCR Scan     		PDF T-41-51 k 2134 Vactec 4202 BD "1050 nm"

    Untitled

    Abstract: No abstract text available
    Text: 5bE D BDBDbQ^ GGQ1G5M IVCT V T B 8 4 4 3 B , 8 4 4 4B VTB Process Photodiodes E 243 Q 8. G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 21F PRODUCT DESCRIPTION P la n a r s ilic o n p h o to d io d e in a recessed ceramic package. The pack­ age incorporates an infrared rejection


    OCR Scan     		PDF VTB8443B TCIs420

    100 VTB 307

    Abstract: VTB 307 VTB8440B VTB8441B VTB8442B
    Text: SbE ]> , ^ 00 010 53 30301 0 307 I VCT VTB8440B. VTB Process Photodiodes T-41-51 E G & G VACTEC PA C K A G E DIMENSIONS inch mm CASE 21F PRO D UCT DESCRIPTION P la n a r s ilic o n p h o to d io d e in a recessed ceramic package. The pack­ age incorporates an infrared rejection


    OCR Scan     		PDF VTB8440B. T-41-51 x1012 8x1013 100 VTB 307 VTB 307 VTB8440B VTB8441B VTB8442B

    Untitled

    Abstract: No abstract text available
    Text: 5bE D m 3G3Gb[n QQOIOTQ 2fl4 H V C T VTS-1 Process Photodiodes 1 4 , _ 18 VTS £ 6 & G VACTEC PRODUCT DESCRIPTION PACKAGE D IM EN SIO N S inch mm Large area planar silicon photodiodes primarily intended for use in the photovoltaic mode. These devices have low series resistance, moderate


    OCR Scan     		PDF 31Typ. 100mW/cm2

    Untitled

    Abstract: No abstract text available
    Text: 5bE D 3 0 3 0 t i G ci □□□1104 VTS-2 Process Photodiodes E 6 & G • VCT VTS 94, 95, 96 T-41-51 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Large area planar silicon photodiodes suitable for use in the photovoltaic mode, but may be used with a small


    OCR Scan     		PDF 303GtiGcà T-41-51 SERIE890 1001c,

    Untitled

    Abstract: No abstract text available
    Text: 5bE D 3 03 0^0 =5 00D1D53 IVCT 307 V T B 8 4 4 0 B , 1B, 2B VTB Process Photodiodes T -4 1 -5 1 E G & G VACTEC PACKAGE DIMENSIONS inch mm CASE 21F PRODUCT DESCRIPTION P la n a r s ilic o n p h o to d io d e in a recessed ceramic package. The pack­ age incorporates an infrared rejection


    OCR Scan     		PDF 00D1D53 VTB8442B VTB8441B VTB8440B

    Untitled

    Abstract: No abstract text available
    Text: IVCT SbE D VTT7122, 23, 25 .025" NPN Phototransistors Molded Lensed Lateral Package T—41—61 £ G & G VACTEC PACKAGE DIMENSIONS inch mm .0 5 5 ( 1 . 40 ) .70 (1 7 .8 ) .0 45 (1 .1 4 ) MINIMUM .0 28 (0 .7 1 ) MAX. Ì .1 80 (4 .5 7) .1 70 (4 .3 2) .100


    OCR Scan     		PDF VTT7122, 400fc VTT7122 VTT7123 VTT7125

    VTB8443B

    Abstract: 8444B VTB8444B
    Text: SbE D B O B Ü b C H G Ü D I O S H 243 • VCT VTB Process Photodiodes VTB8443B, 8444B E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 21F 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION P la n a r s ilic o n p h o to d io d e in a


    OCR Scan     		PDF VTB8443B, 8444B T-41-51 VTB8443B VTB8444B 9x1012 8x1013 VTB8443B 8444B VTB8444B

    31AA

    Abstract: CLD31 VTD32 VTD32AA
    Text: 5bE D 3D30b0^ GOOllSD AMI B V C T VTD32, V T D 3 2 A A VTP Process Photodiodes C L D 3 1 . 3 1 A A L A R G E C H I P I N D U S T R Y EQUIV. E G & G VACTEC T-41-5 1 PACKAGE DIMENSIONS inch (mm) CASE 13 PRODUCT DESCRIPTION CERAMIC CHIP ACTIVE AREA: .033 in2 (21.2 mm2)


    OCR Scan     		PDF 3Q30b VTD32, VTD32AA CLD31. T-41-51 VTD32 1001c, 31AA CLD31 VTD32 VTD32AA

    VTB8440

    Abstract: VTB8441 VTBB442 V 14 K 320
    Text: SbE ]> • BDBDbQ^ 0001051 IVCT S34 VTB Process Photodiodes V T B 8 4 4 0 , 41, 4 2 E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm C A S E 21 8 mm C ER A M IC CHIP ACTIVE AREA: .008 In2 (5.16 mm2) PRODUCT DESCRIPTION P la n a r s ilic o n p h o to d io d e in a


    OCR Scan     		PDF VTB8440, T-41-51 VTB8440 VTB8441 VTBB442 1001c, 7x1013 x1013 VTB8440 VTB8441 VTBB442 V 14 K 320