256KX4
Abstract: V53C104B V53C104 casco battery
Text: JVH VITEUC V53C104B HIGH PERFORMANCE, LO W POW ER 256K X 4 B IT FA S T PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 60/60L 70/70L 80/80L Max. RAS Access Time, tp ^ 60 ns 70 ns 80 ns Max. Column Address Access Time, (tCAA) 30 ns 35 ns 40 ns Min. Fast Page Mode Cyde Time, (tp^)
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V53C104B
60/60L
70/70L
80/80L
V53C104BL
V53C104B-80
V53C104B-1
256KX4
V53C104
casco battery
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yrm 620
Abstract: No abstract text available
Text: ijf r VITEUC V53C104B HIGH PERFORMANCE, LO W POWER 256K X 4 B IT FAST PAGE MODE CMOS DYNAMIC RAM 60/60L 70/70L 80/80L Max RAS Access Time, t„ . _ 1 RAC' 60 ns 70 ns 80 ns Max Column Address Access Time, (*CAA) 30 ns 35 ns 4 0 ns Min Fast Page Mode Cyde Time, (tpç)
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V53C104B
60/60L
V53C104B
70/70L
80/80L
V53C104BL
V53C104B-80
20-pln
yrm 620
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256KX4
Abstract: V53C104B AA44A V53C104
Text: Mu ! *m — iw“ VITEUC V53C104B HIGH PERFORMANCE, LOW POWER 256K X 4 B IT FAST PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 60/60L 70/70L 80/80L Max. RAS Access Time, tp ^ 60 ns 70 ns 80 ns Max. Column Address Access Time, (tCAA) 30 ns 35 ns 40 ns Min. Fast Page Mode Cyde Time, (tpç)
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V53C104B
60/60L
70/70L
80/80L
V53C104BL
200fiA
200jiA
200fiA
V53C104B-80
256KX4
AA44A
V53C104
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V53C104
Abstract: l04b 256KX4 V53C104B tnr dip mil std v53c104b80
Text: JVH VITEUC V53C104B HIGH PERFORMANCE, LO W POW ER 256K X 4 B IT FA S T PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 6 0 /6 0 L 7 0 /7 0 L 8 0 /80L Max. RAS Access Time, t p ^ 60 ns 70 ns 80 ns Max. Column Address Access Time, (tCAA) 30 ns 35 ns 40 ns Min. Fast Page Mode Cyde Time, (tp^)
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V53C104B
60/60L
70/70L
80/80L
V53C104BL
V53C104B-80
V53C104B-1
V53C104
l04b
256KX4
tnr dip mil std
v53c104b80
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