QFN24
Abstract: 8 fach N-Kanal FET transistor TE 901 EN10 G003 G008 transistor pfad
Text: iC-MFN 8-FOLD FAIL-SAFE N-FET DRIVER Ausgabe A2, Seite 1/13 EIGENSCHAFTEN ANWENDUNGEN ♦ 8-fach Level-Shifter auf bis zu 40 V Ausgangsspannung ♦ Eingänge kompatibel zu TTL- und CMOS-Pegeln, spannungsfest bis 40 V ♦ Spannungshub der Ausgänge einstellbar auf 5 V, 10 V oder
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QFN24
QFN24
8 fach N-Kanal FET
transistor TE 901
EN10
G003
G008
transistor pfad
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EN10
Abstract: G003 G008 4 bis 20 mA stromquelle
Text: iC-MFP 8-FOLD FAIL-SAFE P-FET DRIVER Ausgabe A2, Seite 1/14 EIGENSCHAFTEN ANWENDUNGEN ♦ 8-fach Level-Shifter auf bis zu 40 V Ausgangsspannung ♦ Eingänge kompatibel zu TTL- und CMOS-Pegeln, spannungsfest bis 40 V ♦ Spannungshub der Ausgänge einstellbar auf 5 V, 10 V oder
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QFN24
QFN24
EN10
G003
G008
4 bis 20 mA stromquelle
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Untitled
Abstract: No abstract text available
Text: Small-signal Discretes • 0.5 - 8 A, ≤ 100 V, single, double configurations incl. BISS load switches; 13 package options • High voltage transistors 150 - 500 V, 0.1 - 2 A incl. low VCEsat; 5 package options • Resistor-equipped transistors 0.1 - 0.6 A, ≤ 50 V; 8 package options
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OT223/SOT89
2N7002*
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Pudenz
Abstract: No abstract text available
Text: ATS-Sicherungseinsätze ATS-fuse-links ATS-Cartouches fusibles für Nennspannungen bis 36 V for rated voltage up to 36 V pour tension nom. jusqu' à 36 V Isolierkörper: 5A Thermoplast 8 A - 25 A Keramik/Steatit Insulating body: 5A Thermoplastic 8 A - 25 A Ceramic/Steatit
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50IN/Irat
AS2001
Pudenz
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2006-1301
Abstract: 10 295 1204 2006435
Text: TOPJOB S Reihenklemmen 6 10 mm2 Serie 2006 0,5 – 6 (10) mm2 ➊ AWG 20 – 8 800 V/8 kV/3 600 V, 50 A U 41 A 600 V, 50 A 2 Klemmenbreite 7,5 mm / 0.295 in L 13 – 15 mm / 0.55 in * U Y 2 K CCA { 1 9 AWG 20 – 8 0,5 – 6 (10) mm2 ➊ 800 V/8 kV/3 600 V, 50 A U
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hubmagnet
Abstract: lk 46 pull type solenoid coils bistabil
Text: Bistabiler Hubmagnet BI 8 Bistable Linear Solenoid BI 8 Stoßende und ziehende Ausführung Bestellformel BI Hubmagnet BI Thrust and pull type 8 –F– 24 V DC 15 % ED Linear solenoid Bauart 8 Design type Anschlussart Coil terminals Litze Standardlänge 10 cm
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of mosfet BUZ 384
Abstract: BUZ MOSFET thyristor capacitive discharge ignition tig welding transistor CF leistungstransistoren BUZ 338 SIEMENS MOSFET BUZ Ignition weld tig SIEMENS THYRISTOR
Text: Technische Angaben Technical Information 1 Übersicht 1 Overview 1.1 SIPMOS-Leistungstransistoren 1.1 SIPMOS Power Transistors Leistungstransistoren im Bereich 50 V . 1000 V und 10 mΩ . 8 Ω Power transistors in the 50 V to 1000 V and 10 mΩ to 8 Ω range
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MIL-STD-883,
MIL-STD-883;
of mosfet BUZ 384
BUZ MOSFET
thyristor capacitive discharge ignition
tig welding
transistor CF
leistungstransistoren
BUZ 338
SIEMENS MOSFET BUZ
Ignition weld tig
SIEMENS THYRISTOR
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20493-21
Abstract: CX20442 CX81300-11 "dib transformer" C944 CX81300 CX81300-13 conexant ITK INDUCTOR R950
Text: CX81300 SmartACF V.92/V.90/V.34/V.32bis Single Chip ACF Modem with CX20493 SmartDAA and Optional CX20442 Voice Codec Data Sheet Doc. No. 102260B August 26, 2003 CX81300 SmartACF Modem Data Sheet Revision Record Revision B A Date 8/26/2003 8/5/2003 Comments
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CX81300
32bis
CX20493
CX20442
102260B
CX81300
20493-21
CX81300-11
"dib transformer"
C944
CX81300-13
conexant
ITK INDUCTOR
R950
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LED superhell
Abstract: 1.15108.251 foto transistor IEC 695.2-1
Text: Taster 1 Seite Allgemeine Angaben 1- 2 Baureihe 8 mm Baureihe 8 mm, Leuchtdrucktaster, 42 V/250 mA Baureihe 8 mm, Signalleuchten 1- 3 1- 4 1- 6 LUMOTAST FK LUMOTAST FK, Leuchtdrucktaster, 42 V/100 mA LUMOTAST FK, Signalleuchten 1- 9 1 - 12 1 - 16 LUMOTAST 25
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CM110562
Abstract: CM110561 siemens mid-96
Text: 8 179 8179p01 s TX-I/O Triac module Used for − Thermic and motor-driven actuators AC 24 V TXM1.8T − AC 24 V-controlled devices • 8 triac outputs (AC 24 V), configured individually for: – Permanent contact – Three-point positioning output with internal stroke model
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8179p01
8179z17
CM2N8179en
8172M01
CM110562
CM110561
siemens mid-96
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earth terminal block
Abstract: No abstract text available
Text: 1 0,5 – 10 16 mm2 ➊ AWG 20 – 6 800 V/8 kV/3 600 V, 65 A U 57 A 600 V, 65 A 2 Klemmenbreite 10 mm / 0.394 in L 17 – 19 mm / 0.71 in * U2 AWG 20 – 6 0,5 – 10 (16) mm2 ➊ 800 V/8 kV/3 600 V, 65 A U 57 A 600 V, 65 A 2 Klemmenbreite 10 mm / 0.394 in
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Untitled
Abstract: No abstract text available
Text: Atmel 8-bit AVR Microcontroller with 2/4/8K Bytes In-System Programmable Flash ATtiny25/V / ATtiny45/V / ATtiny85/V Features • High Performance, Low Power AVR 8-Bit Microcontroller • Advanced RISC Architecture • • • • • • • • – 120 Powerful Instructions – Most Single Clock Cycle Execution
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ATtiny25/V
ATtiny45/V
ATtiny85/V
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Untitled
Abstract: No abstract text available
Text: Atmel 8-bit AVR Microcontroller with 2/4/8K Bytes In-System Programmable Flash ATtiny25/V / ATtiny45/V / ATtiny85/V Features • High Performance, Low Power AVR 8-Bit Microcontroller • Advanced RISC Architecture • • • • • • • • – 120 Powerful Instructions – Most Single Clock Cycle Execution
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ATtiny25/V
ATtiny45/V
ATtiny85/V
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xoc1
Abstract: No abstract text available
Text: Atmel 8-bit AVR Microcontroller with 2/4/8K Bytes In-System Programmable Flash ATtiny25/V / ATtiny45/V / ATtiny85/V Features • High Performance, Low Power AVR 8-Bit Microcontroller • Advanced RISC Architecture • • • • • • • • – 120 Powerful Instructions – Most Single Clock Cycle Execution
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ATtiny25/V
ATtiny45/V
ATtiny85/V
xoc1
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Untitled
Abstract: No abstract text available
Text: 6 8-Level Terminal Blocks for Matrix Patching Front-entry 2x 0 .0 8 - 1.5 m m 2 2 5 0 V / 4 k V /3 O 10 A 2 x A W G 2 8 - 16 3 0 0 V , 10 A TO 3 0 0 V , 10 A S 2 x 0 .0 8 - 1.5 m m 2 2 5 0 V /4 k V /3 O 10 A 2 x A W G 2 8 - 16 3 0 0 V , 10 A TO 3 0 0 V , 10 A S
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of mosfet BUZ 384
Abstract: simple SL 100 NPN Transistor leistungstransistoren ANALOG DEVICES bar code on the lable test transistors Siemens Dioden fgs npn
Text: SIEMENS Technische Angaben Technical Information 1 Übersicht 1 Overview 1.1 SIPMOS-Leistungstransistoren 1.1 SIPMOS Power Transistors Leistungstransistoren im Bereich 5 0 V . 1000 V und 10 m fi . 8 Q Power transistors in the 50 V to 1000 V and 10 mQ to 8 Q range
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SIL00001
SIL00002
MILSTD-883,
of mosfet BUZ 384
simple SL 100 NPN Transistor
leistungstransistoren
ANALOG DEVICES bar code on the lable
test transistors
Siemens Dioden
fgs npn
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Untitled
Abstract: No abstract text available
Text: S1E SEMIKRON Conditions ' VcES V cgr lc SEMIKRON Values . 101 D i . 121 D 1000 1000 R ge = 20 k£2 Tease = 2 5 /8 0 °C Tease = 2 5 /8 0 °C ICM V g es Ptot Tj, Tstg I I 1200 1200 ±20 AC, 1 min humidity climate D IN 4 0 04 0 D IN I EC 6 8 T.1 Units V V
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03533
Abstract: 353320-9
Text: T H 1S DRAWING IS f c COPYRIG HT UN PU51ISH EO. | BY AMP rac— R ELEASED FOR PU BLIC AT IO N BIST R E V 1S 1O N S INCORPORATED. ALL RIG H T S R ESER VED . LTR 1 A , DESCRIPTION A F J 0 0 -1 06 8 -9 8 R E V IS E D 4 - V e c 'w WN , , A V CW L . 1.2 It- 'i/////to
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PU51ISH
03533
353320-9
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI MICROCOMPUTERS 3886 Group SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER DESCRIPTION • A-D c o n v e rte r. 10-bit X 8 channels T he 3886 group is the 8-bit m icrocom puter based on the 740 fam • D-A c o n v e rte r. 8-bit X 2 channels
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10-bit
16-bit
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Untitled
Abstract: No abstract text available
Text: bliE D b 2 4 * ìfia s M MITSUBISHI LSIs D O i n S O b25 •P1IT1 5 M 5 1 0 0 8 F P , V P , R V - 1 5 V L , - 1 5 V L L 1048576- BIT 131072-WORD BY 8 - BIT CMOS STATIC RAM MITSUBISHI ( MEMORY/ASIC) DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M 5M 51008FP. VP. R V -15V L L are a 1 0 4 8 5 7 6 -b it CMOS
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131072-WORD
51008FP.
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CL-MD2614
Abstract: 16C550 ISA CARD RS232 MD26 pcmcia for RS232 TIA-578 MD1724 CL-MD1414ECP CL-MD9624AT 16C450 TIA578
Text: 213b.t>3^ DOOhblfi MTl • CIR CL-MD1414ECP CIRRUS LOGIC A dvance Product Bulletin FEATURES ■ Data modem modes — CCITT: V.32 bis, V.32, V.23, V.22 bis, V.22, and V.21 — Bell®: 212A and 103 — Speeds: 14400,12000, 9600, 7 2 0 0 ,4 8 0 0 ,2 4 0 0 ,1 2 0 0 ,
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CL-MD1414ECP
EIA/TIA-578
42/MNPÂ
MNL-MD9624ECT,
16C450/16C550-compatible
RS232
CL-MD1414ECT
400-bps
16C450A/16C550-compatible
CL-MD2614
16C550 ISA CARD RS232
MD26
pcmcia for RS232
TIA-578
MD1724
CL-MD1414ECP
CL-MD9624AT
16C450
TIA578
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NP-100
Abstract: No abstract text available
Text: + * - v p y 'j- n SHINDENGEN ELECTRIC IIFfi 32E » y— 1 ; Type No. V orm It [V ] [A ] 40 -8 70 V drm *# # ! 0000027 1 BiSHEJ d l/dt I tsm d V /dt Pt [1C] [A ] 40 40 [/'S] [ A / /'S ] [kV/^S] [W ] io x 1000 50 1.5 2 * Itsm dV /dt [V ] [A ] [/-S ] [kV/^S]
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10X200
NP10014'
NP100
NP-100
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2SD1407
Abstract: 2SB977 2SB1017 2SD1347 2SB966 2SB967 2SB968 2SB970 2SB973 2SB974
Text: - 70 - n Ta=25V.*EPteTc=25V m £ *± £ VcBO Vceo (V) (V) Ic(DC) <A> Pc Pc* (HO m iCBO (max) (ub) VcB (V) m (min) w & (max) 14 V'CE (V) (Ta=25°C) ic/I E (A) [*EP[ätypH3 (max) (V) (V) Ic (A) Ib Ca ) 2SB966 BIS LF PA -120 -120 -8 80 -50 -120 60 320 -5 -1
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2SB966
2SB967
2SB968
2SB970
2SB973
2SB974
2SB1011
2SD1376K
O-126)
2SB1012K
2SD1407
2SB977
2SB1017
2SD1347
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otomax
Abstract: No abstract text available
Text: DC ELECTRICAL SPECIFICATIONS SECTION 8. H4CPIUS DC ELECTRICAL CHARACTERISTICS Table 8-1 Preliminary Electrical Considerations for H4CPIus Series Arrays ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDD=3V/3.3V±0.3V VDD=5V±10% -0.5 to 4.6 -0.5 to 6.0 V V VDD
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b3b7251
otomax
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