Untitled
Abstract: No abstract text available
Text: General Lighting Automotive C R E A T I V E L I G H T UV 世 界 をもっと 変 え て いく 光 の 未 来 創 造 Display LCD Backlighting Specialty Lighting 2014-2 2014-2 Contents ［ 目 次 ］ 086 ･ ･ ･ ･ ･ ･ ･ ･･････････････････････････････････････････
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Produ5752
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NF2W757GR
Abstract: D4973
Text: General Lighting Automotive C R E A T I V E L I G H T UV 世 界 をもっと 変 え て いく 光 の 未 来 創 造 Display LCD Backlighting Specialty Lighting 2015-1 2015-1 Contents ［ 目 次 ］ 092 ･ ･ ･ ･ ･ ･ ･ ･･････････････････････････････････････････
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Untitled
Abstract: No abstract text available
Text: 10-F006PPA006SB-M682B preliminary datasheet flowPIM0+PFC 2nd 600V/6A Features flowPIM0+PFC 2nd ● Clip in PCB mounting ●Trench Fieldstop IGBT's for low saturation losses ● Latest generation superjunction MOSFET for PFC Target Applications Schematic ● Industrial Drives
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10-F006PPA006SB-M682B
00V/6A
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EN61008
Abstract: SCHNEIDER ELECTRIC 12237 IEC 60947-3 ac-22b Schneider Electric ic Teil11 90133DE 12232
Text: Fehlerstromschutzeinrichtungen Funktion FI-Schutzschalter 16 - 80 A, VDE 0664 Teil 11/EN61008 unverzögert, selektiv s und „si“ superimmunisiert FI-Schutzschalter mit folgenden Funktionen: b Schalten und Trennen von elektrischen Stromkreisen b Schutz von Personen bei direktem und
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11/EN61008
Elektr12266
90133DE
EN61008
SCHNEIDER ELECTRIC 12237
IEC 60947-3 ac-22b
Schneider Electric ic
Teil11
12232
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HCS08 ADC code example assembly
Abstract: HCS08 c code ATD function example HCS08 code example assembly HCS08 c code example HCS08 c code example interrupt VTEMP25 AN3031 microcontroller based temperature sensor HCS08 MC9S08QG8
Text: Freescale Semiconductor Application Note Document Number: AN3031 Rev. 1, 04/2010 Temperature Sensor for the HCS08 Microcontroller Family by: Donnie Garcia MCD Applications, Austin, Texas Rafael Peralez RTAC Americas, Guadalajara, Mexico 1 Introduction This document explains how to use the temperature
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AN3031
HCS08
S08ADCV1)
HCS08 ADC code example assembly
HCS08 c code ATD function example
HCS08 code example assembly
HCS08 c code example
HCS08 c code example interrupt
VTEMP25
AN3031
microcontroller based temperature sensor
MC9S08QG8
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HCS08 code example assembly
Abstract: HCS08 ADC code example assembly HCS08 c code example AN3031 HCS08 c code example interrupt HCS08 c code ATD function example microcontroller based temperature sensor temp sensor project IC Temperature Sensors Silicon temperature sensors
Text: Freescale Semiconductor Application Note Document Number: AN3031 Rev. 0, 09/2006 Temperature Sensor for the HCS08 Microcontroller Family by: Donnie Garcia MCD Applications, Austin, Texas Rafael Peralez RTAC Americas, Guadalajara, Mexico 1 Introduction This document explains how to use the temperature
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AN3031
HCS08
S08ADCV1)
HCS08 code example assembly
HCS08 ADC code example assembly
HCS08 c code example
AN3031
HCS08 c code example interrupt
HCS08 c code ATD function example
microcontroller based temperature sensor
temp sensor project
IC Temperature Sensors
Silicon temperature sensors
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EEPROM ST M95256
Abstract: M95256-DR
Text: M95256-DR M95256 M95256-W M95256-R 256 Kbit serial SPI bus EEPROM with high-speed clock Features • Compatible with SPI bus serial interface positive clock SPI modes : – M95256, M95256-W and M95256-R: standard SPI 256 Kbit EEPROM – M95256-DR: standard SPI 256 Kbit
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M95256-DR
M95256
M95256-W
M95256-R
M95256,
M95256-R:
M95256-DR:
M95256
M95256-W
EEPROM ST M95256
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M95256-W
Abstract: M95256 M95256-R ufdfpn8 SO8w
Text: M95256-DR M95256 M95256-W M95256-R 256 Kbit serial SPI bus EEPROM with high-speed clock Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 256 Kb (32 Kbytes) of EEPROM – Page size: 64 bytes SO8 (MN) 150 mil width
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M95256-DR
M95256
M95256-W
M95256-R
40-year
M95256-R
ufdfpn8
SO8w
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M95256DR
Abstract: M95256 M95256-R M95256-W M95256-DR
Text: M95256-DR M95256 M95256-W M95256-R 256 Kbit serial SPI bus EEPROM with high-speed clock Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 256 Kb (32 Kbytes) of EEPROM – Page size: 64 bytes SO8 (MN) 150 mil width
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M95256-DR
M95256
M95256-W
M95256-R
40-year
M95256DR
M95256-R
M95256-DR
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Untitled
Abstract: No abstract text available
Text: M95256-DR M95256 M95256-W M95256-R 256 Kbit serial SPI bus EEPROM with high-speed clock Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 256 Kb (32 Kbytes) of EEPROM – Page size: 64 bytes ■ Additional Write lockable Page (Identification
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M95256-DR
M95256
M95256-W
M95256-R
40-year
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MLP8 package
Abstract: M95256-W M95256 M95256-R AI12304
Text: M95256-DR M95256 M95256-W M95256-R 256 Kbit serial SPI bus EEPROM with high-speed clock Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 256 Kb (32 Kbytes) of EEPROM – Page size: 64 bytes SO8 (MN) 150 mil width
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M95256-DR
M95256
M95256-W
M95256-R
40-year
MLP8 package
M95256-R
AI12304
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W2012CAF
Abstract: W2012A w2012aaf W2012 W2012C
Text: Data Sheet December 1995 i = ^ A TgT = Microelectronics W2012A/W2012C 1.9 GHz Quadrature Modulator Features Description • Supply range: 2012A: 2.7 V to 5.5 V 2012C: 2.7 V to 3.3 V The W2012 is a monolithic integrated circuit that provides indirect, quadrature modulation of an RF
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W2012A/W2012C
2012C:
PHS/RCR-28)
W2012
DS95-219WRF
DS95-059WRF)
W2012CAF
W2012A
w2012aaf
W2012C
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ATTW2012
Abstract: W2012 W2012A W2012C
Text: Data Sheet December 1995 f^ A T C T Microelectronics W2012A/W2012C 1.9 GHz Quadrature Modulator Features Description • Supply range: 2012A: 2.7 V to 5.5 V 2012C: 2.7 V to 3.3 V The W2012 Is a monolithic integrated circuit that provides indirect, quadrature modulation of an RF
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W2012A/W2012C
2012C:
PHS/RCR-28)
W2012
ATTW2012
14-Pin
050-TYP
W2012A
W2012C
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LT 7220
Abstract: No abstract text available
Text: L l/l N ? T . 2 £ $/£;&*>* V in N C -A M P -v — ? -taij CUL 9 4 V - 0 ; H H * =? ^ U i 4 M . ? ? h : ? 7 >• : - ^ ^ 3 I - 3 ^ 1 i i . J b . c o — D 'J -fe -7" ^ ;7 /lf t s e e p r ic L DATE CODE x >* => s n *^7 : ^ 1 . NUMBER 'n * J 5 \ V-^ j “ fr>
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block diagram for automatic room power control
Abstract: 34B DBM ATTW2012 W2012
Text: Data Sheet ATnT April 1995 ^ ^ ^ M ic ro e le c tro n ic s W2012 1.9 GHz Quadrature Modulator Features • W ide supply range: 2.7 Description V to 5.5 V ■ 2 GHz operation ■ More than -2 0 dBm output into 50 i i load single-ended ■ Internal 90° phase shifter is accurate over an IF
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ApriM995
W2012
PHP/RCR-28)
W2012
ATTW2012
14-Pin
DD1773S
block diagram for automatic room power control
34B DBM
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Untitled
Abstract: No abstract text available
Text: bSE D • OfllbflDQ DD41S4fi S3b ■ ANA ANALOG Dual Precision JFETHigh Speed DEVICES_ Operational Amplifier 0P“249 AN AL OG D E V I C E S INC_ 1.1 Scope. This specification covers the detail requirement for a dual precision JFET input operational amplifier. It
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DD41S4fi
OP-249AJ/883
OP-249AZ/883
OP-249ARC/883
MIL-M-38510)
OP-249
MIL-STD-883
O-18V
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1227C
Abstract: STK4332 STK4332 circuit transistor power 5w AMPLIFIER 5W
Text: Ordering number: EN 1227C Thick Film Hybrid IC STK4332 SA 0YO I AF Power Amplifier 5W + 5W min,THD = 1.0% •'X 'v, 'X 'X , 4 fC l r;% - Package Dimensions jf s lit =<% ''''/ -/ life unit: mm M Features * Small and slim package with 25.5 mm height. * Capable of guaranteeing substrate temperature 125°C,
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1227C
STK4332
1227C
STK4332
STK4332 circuit
transistor power 5w
AMPLIFIER 5W
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aj 312
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. COPYRIGHT LOC ALL RIGHTS RESERVED. DIST R E V IS IO N S 6 AJ LTR B ,675 17,1 ,535 13,6 DESCRIPTION DATE DWN BM KW 02SEP05 REVISED PER E C O - 0 5 - 0 0 7 6 8 7 1, DESIGNED FOR USE WITH .085 SEMI-RIGID CABLE.
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02SEP05
31MAR2000
aj 312
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aj 312
Abstract: No abstract text available
Text: TH IS DRAWING IS U N P U B LIS H E D . RELEASED BY TYCO ELECTRONICS CORPORATION. COPYRIGHT FOR PUBLICATION A L L RIGHTS LOC RESERVED. R E V IS IO N S D IST 6 AJ LTR B ,675 17,1 ,535 13,6 DESC RIPTIO N DATE DWN BM KW 02SEP05 REVISED PER E C O - 0 5 - 0 0 7 6 8 7
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02SEP05
C17300±
aj 312
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI -CDGTL L O G I C ! TI D e J bEM^flaV Q G 1 S 2 7 4 b "|~ MITSUBISHI ASTTLs & « l'" * ' í W 1 M 74AS1832P 1 -T -V 3 -/S s'*"*5*”' HEX 2-INPUT OR DRIVER 6249827 MITSUBISHI <DG T L LOGI C DESCRIPTION T h e M 7 4 A S 1 8 3 2 P is a sem iconductor integrated circuit
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74AS1832P
DD1S171
24P4D
24-PIN
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klg relay
Abstract: DIODE B-10 monoflop BEL 640 transistor 6040B 081-0200 long deLAY ic timer relay U6040B ki-31
Text: MME D I ÔTSQQTb 001073Ö M • ALGG TELEFUNKEN ELECTRONIC U 640 B • U 6040 B TIMER CIRCUIT FOR RELAY CONTROL " P 5 1 - 1 'i Technology: Bipolar Features: • Voltage stabilization • Relay output with integrated Z-diode limitation • Digital time sequence across
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T-51-19
001074b
klg relay
DIODE B-10
monoflop
BEL 640 transistor
6040B
081-0200
long deLAY ic timer relay
U6040B
ki-31
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ki31
Abstract: U640B ki-31 60408 relay 6v U6040B K187 6v 5 pin relay monoflop
Text: M4E D I ÛTEÜCHb TELEFUNKEN ELECTRONIC 001G73Ö 4 • ALGG U 640 B • U 6040 B TIMER CIRCUIT FOR RELAY CONTROL " P S I - I 0! Te ch n o lo g y : Bipolar F eatu res: • Voltage stabilization • Relay output with integrated Z-diode limitation Digital time sequence across
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001G73Ã
-T-51-n
T-51-19
47liF
QYX83
001074b
ki31
U640B
ki-31
60408
relay 6v
U6040B
K187
6v 5 pin relay
monoflop
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Untitled
Abstract: No abstract text available
Text: □ ANALOG DEVICES Dual Precision JFET High Speed Operational Amplifier OP-249 1.1 Scope. This specification covers the detail requirement for a dual precision JFET input operational amplifier. It is highly recommended that this data sheet be used as a baseline for new military or aerospace specifica
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OP-249
OP-249AJ/883
OP-249AZ/883
OP-249ARC/883
MIL-M-38510)
20-Contact
20-Position
OP-249/883
MIL-STD-883
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Untitled
Abstract: No abstract text available
Text: CHAPTER 12 INSTRUCTIONS Table 12-1 Operand Type Identifier reg,reg' reg8 regi 6 mem mem 8 mem 16 mem32 dmem imm imm3 inun4 imm8 imml6 acc sreg src-table src-block dst-block near-proc far-proc near-label short-label far-label Description 8 - or 16-bit general-purpose register
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mem32
16-bit
32-bit
256-byte
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