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    V/2N3866 EQUIVALENT Search Results

    V/2N3866 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    V/2N3866 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3866 JANTXV

    Abstract: 2N3866A JAN
    Text: 2N3866 A Compliant NPN Silicon High-Frequency Transistor Qualified per MIL-PRF-19500/398 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This 2N3866(A) silicon VHF-UHF amplifier transistor is military qualified up to the JANS level for high-reliability applications. It is also available in a low profile UB package.


    Original     		PDF 2N3866 MIL-PRF-19500/398 O-205AD T4-LDS-0175, 2N3866 JANTXV 2N3866A JAN

    2N3866 equivalent

    Abstract: 2n3866a
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN SILICON


    Original     		PDF MIL-PRF-19500/398 2N3866 2N3866A 2N3866UB 2N3866AUB T4-LDS-0175 2N3866 equivalent 2n3866a

    Untitled

    Abstract: No abstract text available
    Text: 2N3866 A UB Compliant NPN Silicon High-Frequency Transistor Qualified per MIL-PRF-19500/398 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This 2N3866(A) silicon VHF-UHF amplifier transistor is military qualified up to the JANS level for high-reliability applications. It is also available in a top hat leaded TO-205AD package.


    Original     		PDF 2N3866 MIL-PRF-19500/398 O-205AD T4-LDS-0175-1,

    2N3866 equivalent

    Abstract: 2N3866 2N3866A 2N3866 JANTX 2N3866 JAN 2N3866AUB Transistor 2N3866 2N3866UB 2N3866 JANTXV
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN SILICON


    Original     		PDF MIL-PRF-19500/398 2N3866 2N3866A 2N3866UB 2N3866AUB T4-LDS-0175 2N3866 equivalent 2N3866 2N3866A 2N3866 JANTX 2N3866 JAN 2N3866AUB Transistor 2N3866 2N3866UB 2N3866 JANTXV

    2N3866A JAN

    Abstract: No abstract text available
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 18 September 2011. MIL-PRF-19500/398K 18 June 2011 SUPERSEDING MIL-PRF-19500/398J 26 January 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY,


    Original     		PDF MIL-PRF-19500/398K MIL-PRF-19500/398J 2N3866, 2N3866A, 2N3866UB, 2N3866AUB, 2N3866A JAN

    transistor equivalents for 2n3866

    Abstract: 2N3866 application note 2N3866 RF output Design 2N3866 clare mercury relay 2N3866A mercury clare 851 clare mercury 2N3866 application V/2N3866 equivalent
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 May 2002. INCH-POUND MIL-PRF-19500/398F 23 January 2002 SUPERSEDING MIL-PRF-19500/398E 11 September 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY


    Original     		PDF MIL-PRF-19500/398F MIL-PRF-19500/398E 2N3866, 2N3866A, 2N3866UB, 2N3866AUB, MIL-PRF-19500. transistor equivalents for 2n3866 2N3866 application note 2N3866 RF output Design 2N3866 clare mercury relay 2N3866A mercury clare 851 clare mercury 2N3866 application V/2N3866 equivalent

    2N3866 application note

    Abstract: 2N3866 2N3866 equivalent 2N3866A 2N3866 RF output Design 2N3866A JAN 851 clare relay 2N3866AUB 2N3866UB clare mercury relay
    Text: The documentation and process conversion measures necessary to comply with this document shall be completed by 26 April 2010. INCH-POUND MIL-PRF-19500/398J 26 January 2010 SUPERSEDING MIL-PRF-19500/398H 27 July 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY,


    Original     		PDF MIL-PRF-19500/398J MIL-PRF-19500/398H 2N3866, 2N3866A, 2N3866UB, 2N3866AUB, MIL-PRF-19500. 2N3866 application note 2N3866 2N3866 equivalent 2N3866A 2N3866 RF output Design 2N3866A JAN 851 clare relay 2N3866AUB 2N3866UB clare mercury relay

    sn1016

    Abstract: ATIC-17 2N2369 transistor pulse generator LT1016CN8 RCA 2N3866 dual fet q51 74121 application as pulse generator 2N3866 APPLICATION sn7402 equivalent LT1016
    Text: LT1016 UltraFast Precision 10ns Comparator U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO UltraFastTM 10ns typ Operates Off Single 5V Supply or ±5V Complementary Output to TTL Low Offset Voltage No Minimum Input Slew Rate Requirement No Power Supply Current Spiking


    Original     		PDF LT1016 LT1016 LT1711/LT1712 LT1713/LT1714 LT1715 150MHz LT1719/LT1720/LT1721 sn1016 1016fcs ATIC-17 2N2369 transistor pulse generator LT1016CN8 RCA 2N3866 dual fet q51 74121 application as pulse generator 2N3866 APPLICATION sn7402 equivalent

    Lt1016

    Abstract: sn1016 lt1016 equivalent LT1220
    Text: LT1016 UltraFast Precision 10ns Comparator FEATURES • ■ ■ ■ ■ ■ U ■ DESCRIPTIO UltraFastTM 10ns typ Operates Off Single 5V Supply or ±5V Complementary Output to TTL Low Offset Voltage No Minimum Input Slew Rate Requirement No Power Supply Current Spiking


    Original     		PDF LT1016 T1016 LT1711/LT1712 LT1713/LT1714 LT1715 150MHz LT1719/LT1720/LT1721 sn1016 1016fcs Lt1016 lt1016 equivalent LT1220

    LT1220

    Abstract: No abstract text available
    Text: LT1016 UltraFast Precision 10ns Comparator Features n n n n n n n Description UltraFast 10ns typ Operates Off Single 5V Supply or ±5V Complementary Output to TTL Low Offset Voltage No Minimum Input Slew Rate Requirement No Power Supply Current Spiking


    Original     		PDF LT1016 LT1016, LT1016 100MHz LT1715 150MHz LT1719/LT1720/LT1721 LT1220

    ATIC-17

    Abstract: 74121 application as pulse generator 2N2369 transistor pulse generator RCA 2N3866 2n5160 ATIC17 ATIC-17 c1 Transistor 2N3866 SN7402 datasheet sn7402 equivalent
    Text: LT1016 UltraFast Precision 10ns Comparator U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO UltraFastTM 10ns typ Operates Off Single 5V Supply or ±5V Complementary Output to TTL Low Offset Voltage No Minimum Input Slew Rate Requirement No Power Supply Current Spiking


    Original     		PDF LT1016 LT1016 LT1711/LT1712 LT1713/LT1714 LT1715 150MHz LT1719/LT1720/LT1721 1016fc ATIC-17 74121 application as pulse generator 2N2369 transistor pulse generator RCA 2N3866 2n5160 ATIC17 ATIC-17 c1 Transistor 2N3866 SN7402 datasheet sn7402 equivalent

    pe-6197

    Abstract: 74C04 op amp transistor current booster circuit MJE305 linear an18 12BH7A 1000v to 2000v vac inverter circuit 2n5160 SCR c106 PIN CONFIGURATION 2N3866
    Text: Application Note 18 March 1986 Power Gain Stages for Monolithic Amplifiers Jim Williams Most monolithic amplifiers cannot supply more than a few hundred milliwatts of output power. Standard IC processing techniques set device supply levels at 36V, limiting available output swing. Additionally, supplying currents beyond


    Original     		PDF an18f AN18-16 pe-6197 74C04 op amp transistor current booster circuit MJE305 linear an18 12BH7A 1000v to 2000v vac inverter circuit 2n5160 SCR c106 PIN CONFIGURATION 2N3866

    ultronix 105A

    Abstract: LT1001 118MF LM129 LT1001AM LT1001C LT1002 74C9 Transistor 2N3866 2N3866 equivalent
    Text: LT1001 Precision Operational Amplifier DESCRIPTION U FEATURES • ■ ■ ■ ■ ■ ■ The LT 1001 significantly advances the state-of-theart of precision operational amplifiers. In the design, processing, and testing of the device, particular attention has been paid to the optimization of the entire


    Original     		PDF LT1001 LT1001C, LT1001AM LT1001C 152mm) 254mm) ultronix 105A LT1001 118MF LM129 LT1001AM LT1001C LT1002 74C9 Transistor 2N3866 2N3866 equivalent

    LT1001

    Abstract: OFM-1A OPTO MOS SWITCH OFM 2N5160 118MF ROSEMOUNT LT301A LM329 2N5160 equivalent 74c906 2N4393
    Text: LT1001 Precision Operational Amplifier DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ The LT 1001 significantly advances the state-of-theart of precision operational amplifiers. In the design, processing, and testing of the device, particular attention has been paid to the optimization of the entire


    Original     		PDF LT1001 LT1001C, LT1001AM LT1001C 152mm) 254mm) 1001fb LT1001 OFM-1A OPTO MOS SWITCH OFM 2N5160 118MF ROSEMOUNT LT301A LM329 2N5160 equivalent 74c906 2N4393

    rosemount 118mf

    Abstract: OPTO MOS SWITCH OFM 2N5160 equivalent LT1001 KELVIN-VARLEY DIVIDER ultronix 105A 2n5160 OFM-1A 2N5160 ss LT301A
    Text: LT1001 Precision Operational Amplifier DESCRIPTION U FEATURES • ■ ■ ■ ■ ■ ■ The LT 1001 significantly advances the state-of-theart of precision operational amplifiers. In the design, processing, and testing of the device, particular attention has been paid to the optimization of the entire


    Original     		PDF LT1001 LT1001C, LT1001AM LT1001C 152mm) 254mm) rosemount 118mf OPTO MOS SWITCH OFM 2N5160 equivalent LT1001 KELVIN-VARLEY DIVIDER ultronix 105A 2n5160 OFM-1A 2N5160 ss LT301A

    ta66

    Abstract: uA733 an47fa Ferronics 21-110J 2n2369 avalanche lt1150 Tektronix P6056 linear technology an47 AN-4745 NE592
    Text: Application Note 47 August 1991 High Speed Amplifier Techniques A Designer’s Companion for Wideband Circuitry Jim Williams PREFACE This publication represents the largest LTC commitment to an application note to date. No other application note absorbed as much effort, took so long or cost so much.


    Original     		PDF LTAN47 AN47-129 AN47-130 AN47-131 AN47-132 an47fa ta66 uA733 Ferronics 21-110J 2n2369 avalanche lt1150 Tektronix P6056 linear technology an47 AN-4745 NE592

    ta143

    Abstract: Ferronics 21-110J AN47-127 AN47 AN-4745 AN47-48 an47fa AN47-93 Tektronix P6056 TELEDYNE PHILBRICK logarithmic
    Text: Application Note 47 August 1991 High Speed Amplifier Techniques A Designer’s Companion for Wideband Circuitry Jim Williams PREFACE This publication represents the largest LTC commitment to an application note to date. No other application note absorbed as much effort, took so long or cost so much.


    Original     		PDF gLTAN47 AN47-129 AN47-130 AN47-131 AN47-132 an47fa ta143 Ferronics 21-110J AN47-127 AN47 AN-4745 AN47-48 AN47-93 Tektronix P6056 TELEDYNE PHILBRICK logarithmic

    2N3866 MOTOROLA

    Abstract: s-parameter 2N3866A 2n3866a Motorola 2N3866 motorola 2N3866
    Text: MOTOROLA SC XSTRS/R F b3b?254 0QT4032 MOTOROLA b •MOTt T - 3 3 -¿>5 ■ SEMICONDUCTOR 2N38G6 2N3866A TECHNICAL DATA The RF Line 1.0 W - 400 M Hz HIGH FREQ UEN C Y TRANSISTOR NPN SILICON HIGH FREQ UEN C Y TRANSISTOR N P N S IL IC O N . . designed for am plifier and oscillator applications in m ilitary and


    OCR Scan     		PDF 0QT4032 2N38G6 2N3866A 15V0C T-33-05 2N3866, b3b7254 2N3866 MOTOROLA s-parameter 2N3866A 2n3866a Motorola 2N3866 motorola 2N3866

    2N3866 MOTOROLA

    Abstract: s-parameter 2N3866 motorola 2N3866 2N3866 2n3866a Motorola 2n3866 211 2N3866 equivalent data 2n3866 sm 190 e3055
    Text: MOTOROLA SEM ICO NDUCTOR 2N3866 2N3866A TECHNICAL DATA The RF Line 1.0 W - 400 MHz H IG H FREQUENCY TRANSISTOR NPN SILICO N HIGH FREQ UENCY TRANSISTOR NPN SILIC O N . . . designed for a m plifier and oscillator applications in m ilita ry and industrial equipment. Suitable for use as o utp ut, driver or pre-driver


    OCR Scan     		PDF 2N3866 2N3866A 2N3866, 2N3866 MOTOROLA s-parameter 2N3866 motorola 2N3866 2n3866a Motorola 2n3866 211 2N3866 equivalent data 2n3866 sm 190 e3055

    rca 2n3375

    Abstract: 2N3553 equivalent RCA TO60 TRANSISTORS 40281 40280 RCA RF POWER TRANSISTOR CD2152 2N2876 RCA Transistors rca power transistor
    Text: RF Power Transistors Featuring “overlay” Construction For HF-VHF-UHF Microwave Applications M olded-Silicone Hermetic Hermetic Hermetic Plastic Package Ceramic-Metal Ceramic-Metal Strip-L. Package Coaxial Package Small Ceramic-Metal Coaxial Package (Large)


    OCR Scan     		PDF 000-Series 2N1492 RCA-CA3000 RFT-700E/2L 1076R5 rca 2n3375 2N3553 equivalent RCA TO60 TRANSISTORS 40281 40280 RCA RF POWER TRANSISTOR CD2152 2N2876 RCA Transistors rca power transistor

    BC140 equivalent

    Abstract: 2N4427 equivalent 2n4036 equivalent 2N2270 equivalent 2N3866 equivalent 2N929 2N930 BAW63 BAW63A BFS36
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B .S . number* Page Type


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BC140 equivalent 2N4427 equivalent 2n4036 equivalent 2N2270 equivalent 2N3866 equivalent

    2N4427 equivalent

    Abstract: ZT Ferranti 2N2369 equivalent 2N2708 BZX88-C4V3 diode BAW67 f025 ic marking z7 J 2N2369 marking G5
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A 2N4427 equivalent ZT Ferranti 2N2369 equivalent 2N2708 BZX88-C4V3 diode BAW67 f025 ic marking z7 J 2N2369 marking G5

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


    OCR Scan     		PDF PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239

    1N5411

    Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
    Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal


    OCR Scan     		PDF CON-46 O-104 14-Lead 16-Lead 12-Lead 16-Lead O-220AB 1N5411 npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756