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    UTC HIGH VOLTAGE SWITCHING TRANSISTOR Search Results

    UTC HIGH VOLTAGE SWITCHING TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    UTC HIGH VOLTAGE SWITCHING TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBTA92 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 1 FEATURES * High Collector-Emitter voltage: VCEO=-300V UTC MMBTA92


    Original     		PDF MMBTA92 MMBTA92 -300V MMBTA92) 625mW OT-23 MPSA93 MPSA92

    2SA1627

    Abstract: pnp transistor 600V 2sa162
    Text: UTC 2SA1627 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627 is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. *High-speed switching


    Original     		PDF 2SA1627 2SA1627 O-126 QW-R204-010 pnp transistor 600V 2sa162

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SA1627 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627 is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. *High-speed switching


    Original     		PDF 2SA1627 2SA1627 O-126 QW-R204-010

    transistor b1

    Abstract: hlb124 NPN Transistor 600V 1S1000 utchlb124
    Text: UTC HLB124 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC HLB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. 1 FEATURES * High Speed Switching * Low Saturation Voltage


    Original     		PDF HLB124 HLB124 O-220 HLB124L QW-R203-029 transistor b1 NPN Transistor 600V 1S1000 utchlb124

    2SA1627A

    Abstract: 600v pnp
    Text: UTC 2SA1627A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. 1 *High-speed switching


    Original     		PDF 2SA1627A 2SA1627A O-126C QW-R217-004 600v pnp

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SA1627A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. 1 *High-speed switching


    Original     		PDF 2SA1627A 2SA1627A O-126C QW-R217-004

    Untitled

    Abstract: No abstract text available
    Text: UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES 1 * High Collector-Emitter voltage:


    Original     		PDF MPSA92 MPSA92/93 -300V MPSA92) -200V MPSA93) 625mW MPSA92 MPSA93

    MPSA92

    Abstract: MPS-A92
    Text: UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 1 FEATURES * High Collector-Emitter voltage:


    Original     		PDF MPSA92 MPSA92/93 -300V MPSA92) -200V MPSA93) 625mW OT-89 MPSA92 MPSA93 MPS-A92

    MPSA92

    Abstract: No abstract text available
    Text: UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 1 FEATURES * High Collector-Emitter voltage:


    Original     		PDF MPSA92 MPSA92/93 -300V MPSA92) -200V MPSA93) 625mW OT-89 MPSA93

    mpsa92 transistor

    Abstract: Transistor MPSA92
    Text: UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES 1 * High Collector-Emitter voltage:


    Original     		PDF MPSA92 MPSA92/93 -300V MPSA92) -200V MPSA93) 625mW MPSA92 MPSA93 mpsa92 transistor Transistor MPSA92

    MPSA92

    Abstract: No abstract text available
    Text: UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES 1 * High Collector-Emitter voltage:


    Original     		PDF MPSA92 MPSA92/93 -300V MPSA92) -200V MPSA93) 625mW MPSA93

    SOT-23 2D

    Abstract: sot 23 2D pnp transistor 300v sot23 MMBTA92 MPSA92 MPSA93
    Text: UTC MMBTA92 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 2 1 FEATURES * High Collector-Emitter voltage: VCEO=-300V


    Original     		PDF MMBTA92 MMBTA92 -300V 350mW OT-23 MPSA93 MPSA92 625mW 100MHz QW-R206-005 SOT-23 2D sot 23 2D pnp transistor 300v sot23 MPSA92 MPSA93

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBTA92 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 2 1 FEATURES * High Collector-Emitter voltage: VCEO=-300V


    Original     		PDF MMBTA92 MMBTA92 -300V 350mW OT-23 -30sing QW-R206-005

    MPSA93

    Abstract: PZTA92 PZTA93
    Text: UTC PZTA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC PZTA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 2 1 3 FEATURES * High Collector-Emitter voltage:


    Original     		PDF PZTA92 PZTA92/93 -300V PZTA92) -200V PZTA93) 1000mW OT-223 PZTA92 PZTA93 MPSA93 PZTA93

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD1804 NPN EPITAXIAL PLANAR SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS APPLICATIONS The UTC 2SD1804 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications. 1 FEATURES *Low collector-to-emitter saturation voltage


    Original     		PDF 2SD1804 O-252 QW-R209-006

    utc 2sd1804

    Abstract: No abstract text available
    Text: UTC 2SD1804 NPN EPITAXIAL PLANAR SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS APPLICATIONS The UTC 2SD1804 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications. 1 FEATURES *Low collector-to-emitter saturation voltage


    Original     		PDF 2SD1804 O-252 100ms QW-R209-006 utc 2sd1804

    PZTA92

    Abstract: PZTA93 AL 102 pnp transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD PZTA92/93 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ DESCRIPTION The UTC PZTA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. „ FEATURES * Collector-emitter voltage: VCEO=-300V UTC PZTA92


    Original     		PDF PZTA92/93 PZTA92/93 -300V PZTA92) -200V PZTA93) PZTA42/43 PZTA92L PZTA93L PZTA92G PZTA92 PZTA93 AL 102 pnp transistor

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD PZTA92/93 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR  DESCRIPTION The UTC PZTA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier.  FEATURES * Collector-emitter voltage: VCEO=-300V UTC PZTA92


    Original     		PDF PZTA92/93 PZTA92/93 -300V PZTA92) -200V PZTA93) PZTA42/43 PZTA92G-AA3-R PZTA93G-AA3-R OT-223

    HLB122L

    Abstract: HLB122
    Text: UTC HLB122 NPN EPITAXIAL SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC HLB122 is a medium power transistor designed for use in switching applications. FEATURES 1 * High breakdown voltage * Low collector saturation voltage


    Original     		PDF HLB122 HLB122 O-251 HLB122L QW-R213-014 HLB122L

    HLB121

    Abstract: No abstract text available
    Text: UTC HLB121 NPN EPITAXIAL SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC HLB121 is a medium power transistor designed for use in switching applications. FEATURES 1 * High breakdown voltage * Low collector saturation voltage


    Original     		PDF HLB121 HLB121 O-251 HLB121L QW-R213-015

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT5551 DUAL TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  DESCRIPTION The UTC MMDT5551 is a high voltage fast-switching dual NPN transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.


    Original     		PDF MMDT5551 MMDT5551 MMDT5551G-AL6-R OT-363 QW-R218-022

    High Voltage Switching Transistor

    Abstract: MMDT5551
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT5551 Preliminary DUAL TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ DESCRIPTION The UTC MMDT5551 is a high voltage fast-switching dual NPN transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.


    Original     		PDF MMDT5551 MMDT5551 MMDT5551L-AL6-R MMDT5551G-AL6-R OT-363 QW-R218-022 High Voltage Switching Transistor

    equivalent of 5401 transistor

    Abstract: 5401 transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT5401 Preliminary DUAL TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ DESCRIPTION The UTC 5401 is a high voltage fast-switching dual PNP transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.


    Original     		PDF MMDT5401 -150V MMDT5401L-AL6-R MMDT5401G-AL6-R OT-363 QW-R218-021 equivalent of 5401 transistor 5401 transistor

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT5401 Preliminary DUAL TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  DESCRIPTION The UTC MMDT5401 is a high voltage fast-switching dual PNP transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.


    Original     		PDF MMDT5401 MMDT5401 -150V MMDT5401G-AL6-R OT-363 QW-R218-021