Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1SS355 DIODE SWITCHING DIODE DESCRIPTION The UTC 1SS355 is a switching diode, it uses UTC’s advanced technology to provide the customers with high reliability and ultra small mold type, etc. The UTC 1SS355 is suitable for high speed switching applications,
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1SS355
1SS355
1SS355L-CB2-R
1SS355G-CB2-R
OD-323
QW-R601-079at
QW-R601-079
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PDF
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UTC 225
Abstract: 1SS355G-CB2-R 1SS355
Text: UNISONIC TECHNOLOGIES CO., LTD 1SS355 Preliminary DIODE SWITCHING DIODE DESCRIPTION The UTC 1SS355 is a switching diode, it uses UTC’s advanced technology to provide the customers with high reliability and ultra small mold type, etc. The UTC 1SS355 is suitable for high speed switching applications,
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Original
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1SS355
1SS355
OD-323
1SS355L-CB2-R
1SS355G-CB2-R
QW-R601-079
UTC 225
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1SS355 DIODE SWITCHING DIODE DESCRIPTION The UTC 1SS355 is a switching diode, it uses UTC’s advanced technology to provide the customers with high reliability and ultra small mold type, etc. The UTC 1SS355 is suitable for high speed switching applications,
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Original
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1SS355
1SS355
1SS355G-CB2-R
OD-323
QW-R601-079
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD 1SS355 Preliminary DIODE SWI T CH I N G DI ODE ̈ DESCRI PT I ON The UTC 1SS355 is a switching diode, it uses UTC’s advanced technology to provide the customers with high reliability and ultra small mold type, etc. The UTC 1SS355 is suitable for high speed switching applications,
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Original
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1SS355
1SS355
1SS355L-CB2-R
1SS355G-CB2-R
OD-323
QW-R601-079
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PDF
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MC33218
Abstract: Log-Antilog Amplifier intercom electronic circuit diagram Analog Applications Journal
Text: UTC MC33218 LINEAR INTEGRATED CIRCUIT VOICE SWITCHED SPEAKERPHONE WITH MICROPROCESSOR INTERFACE DESCRIPTION The UTC MC33218 voice switched speakerphone circuit incorporates the necessary amplifiers, attenuators, level detectors and control algorithm to form the heart of a high
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MC33218
QW-R108-017
Log-Antilog Amplifier
intercom electronic circuit diagram
Analog Applications Journal
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PDF
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MMBT9012
Abstract: MMBT9013 ,MARKING 12. SOT-23 UTC 225
Text: UTC MMBT9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2 *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC MMBT9013 1
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MMBT9012
625mW)
-500mA)
MMBT9013
OT-23
QW-R206-020
MMBT9012
MMBT9013
,MARKING 12. SOT-23
UTC 225
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PDF
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utc3843
Abstract: 3843B UTC3842 UTC3843B UTC3842B UC3842B PWM 3843B UTC 225
Text: UTC UC3842B / 3843B LINEAR INTEGRATED CIRCUIT HIGH PERFORMANCE CURRENT MODE CONTROLLERS DESCRIPTION The UTC UC3842B/3843B are specifically designed for Off-Line and dc-to-dc converter applications offering the designer a cost-effective solution with minimal external
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UC3842B
3843B
UC3842B/3843B
UC3843B
250kHz
500kHz
QW-R103-012
utc3843
UTC3842
UTC3843B
UTC3842B
PWM 3843B
UTC 225
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PDF
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Untitled
Abstract: No abstract text available
Text: UTC MMBT9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2 *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012 1
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MMBT9013
625mW)
500mA)
MMBT9012
OT-23
QW-R206-021
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PDF
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MMBT9013
Abstract: MMBT9012 MMBT9013L
Text: UTC MMBT9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2 *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012 1
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Original
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MMBT9013
625mW)
500mA)
MMBT9012
OT-23
MMBT9013L
QW-R206-021
MMBT9013
MMBT9012
MMBT9013L
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PDF
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Untitled
Abstract: No abstract text available
Text: UTC MMBT9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2 *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC MMBT9013 1
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Original
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MMBT9012
625mW)
-500mA)
MMBT9013
OT-23
QW-R206-020
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PDF
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12N60l
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60
12N60
QW-R502-170
12N60l
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60
12N60
QW-R502-170
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PDF
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3843B
Abstract: UTC3842 utc3843 UC3842B utc3843b UTC3842B uc3842b equivalent IC 3843B UC3843B PWM 3843B
Text: UTC UC3842B / 3843B LINEAR INTEGRATED CIRCUIT HIGH PERFORMANCE CURRENT MODE CONTROLLERS DESCRIPTION The UTC UC3842B/3843B are specifically designed for Off-Line and dc-to-dc converter applications offering the designer a cost-effective solution with minimal external
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Original
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UC3842B
3843B
UC3842B/3843B
UC3843B
250kHz
500kHz
QW-R103-012
UTC3842
utc3843
utc3843b
UTC3842B
uc3842b equivalent
IC 3843B
PWM 3843B
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PDF
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UTC12N70
Abstract: 12N70 220f1 12N70L-TF3-T 12n70l
Text: UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET 12 Amps, 700 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N70
12N70
QW-R502-220
UTC12N70
220f1
12N70L-TF3-T
12n70l
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PDF
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12n70
Abstract: 12n70g 12N70L-TF3-T 12N70-TF1-T power mosfet 200A 60A 45V TO-220F 12N70-TF3-T 480-V 12N70L-TA3-T BY 220 diode
Text: UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET 12 Amps, 700 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N70
12N70
12N70L
12N70G
QW-R502-220
12n70g
12N70L-TF3-T
12N70-TF1-T
power mosfet 200A
60A 45V TO-220F
12N70-TF3-T
480-V
12N70L-TA3-T
BY 220 diode
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD P6KE TVS TRANSIENT VOLTAGE SUPPRESSORS DESCRIPTION The UTC P6KE is Transient Voltage Suppressors. it uses UTC’s advanced technology to provide customers with low leakage current, ultra-low response time and perfect clamping capability, etc
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DO-15
P6KEXXXXXL-Z15-R
P6KEXXXXXG-Z15-R
QW-R227-001
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N65 Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N65 are N-Channel enhancement mode power field effect transistors MOSFET which are produced by using UTC’s proprietary, planar stripe and DMOS technology.
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12N65
12N65
QW-R502-583
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PDF
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12N60L
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60
O-220
12N60
O-220F
O-220F1
QW-R502-170
12N60L
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PDF
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UTC12N60
Abstract: 12n60g 12N60L 12n60 12a 600v 12N60 mosfet 12A 600V
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60
O-220F
O-220
12N60
O-220F1
O-262
QW-R502-170
UTC12N60
12n60g
12N60L
12n60 12a 600v
mosfet 12A 600V
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12n60a
Abstract: 12N60 12N60L 12n60 dc 12n60b 12A 650V MOSFET 12N-60a power mosfet 200A 12N60L-x-TF3-T 12N60G
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60
12N60
12N60L
12N60G
QW-R502-170
12n60a
12N60L
12n60 dc
12n60b
12A 650V MOSFET
12N-60a
power mosfet 200A
12N60L-x-TF3-T
12N60G
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD P6KE TVS TRANSIENT VOLTAGE SUPPRESSORS DESCRIPTION The UTC P6KE is Transient Voltage Suppressors. it uses UTC’s advanced technology to provide customers with low leakage current, ultra-low response time and perfect clamping capability, etc
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Original
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DO-15
P6KEXXXXXL-Z15-R
P6KEXXXXXG-Z15-R
QW-R227-001
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N65 Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 12N65 are N-Channel enhancement mode power field effect transistors MOSFET which are produced by using UTC’s proprietary, planar stripe and DMOS technology.
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12N65
O-220
12N65
O-220F
O-220F1
QW-R502-583
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PDF
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UTC 225
Abstract: utc225 LM318 LM318 APPLICATION LM318 application note QW-R105-016 LM318 data 100PF LM709 fast op LM318
Text: UTC LM318 LINEAR INTEGRATED CIRCUIT DESCRIPTION The UTC LM318 is precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. It features a factor of ten increase in speed over general purpose device without sacrificing DC performance.
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LM318
LM318
QW-R105-016
100PF
UTC 225
utc225
LM318 APPLICATION
LM318 application note
LM318 data
100PF
LM709
fast op LM318
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET 12A, 700V N-CHANNEL POWER MOSFET 1 FEATURES TO-220F TO-220 DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N70
O-220F
O-220
12N70
O-220F1
O-220F2
O-220F3
QW-R502-220
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PDF
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