UT3409G Search Results
UT3409G Datasheets Context Search
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diode 244Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3409 Power MOSFET P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3409 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. |
Original |
UT3409 UT3409 UT3409L-AE2-R UT3409G-AE2-R UT3409L-AE3-R UT3409G-AE3-R OT-23-3 OT-23 QW-R502-244 diode 244 | |
Contextual Info: UNISONICTECHNOLOGIESCO., LTD UT3409 Power MOSFET P-CH AN N EL EN H AN CEM EN T M ODE FI ELD EFFECT T RAN SI ST OR ̈ DESCRI PT I ON The UTC UT3409 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use |
Original |
UT3409 UT3409 UT3409L-AE2-R UT3409G-AE2-R UT3409L-AE3-R UT3409G-AE3-R OT-23-3 OT-23 QW-R502-244 | |
UT3409Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3409 Power MOSFET P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3409 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product |
Original |
UT3409 UT3409 1111UT3409L UT3409G QW-R502-244 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3409 Power MOSFET P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3409 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. |
Original |
UT3409 UT3409 UT3409L-AE3-R UT3409G-AE3-R OT-23 QW-R502-244 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3409 Power MOSFET P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3409 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. |
Original |
UT3409 UT3409 UT3409G-AE2-R UT3409G-AE3-R UT3409G-AL3-R OT-23-3 OT-23 OT-323 QW-R502-244 |