UT20N03L
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD UT20N03 Power MOSFET N -CH AN N EL EN H AN CEM EN T M ODE ̈ FEAT U RES * RDS ON = 20m @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified ̈ SY M BOL 2.Drain 1.Gate 3.Source
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UT20N03
UT20N03L-TN3-R
UT20N03G-TN3-R
O-252
UT20N03L-TN3-T
UT20N03G-TN3-T
UT20N03L-K08-5060-R
UT20N03G-K08-5060-R
QW-R502-139
UT20N03L
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UT20n03
Abstract: ut20n03l UT20
Text: UNISONIC TECHNOLOGIES CO., LTD UT20N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS ON = 20mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain *Pb-free plating product number: UT20N03L
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Original
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PDF
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UT20N03
UT20N03L
UT20N03-TN3-R
UT20N03L-TN3-R
UT20N03-TN3-T
UT20N03L-TN3-T
O-252
QW-R502-139
UT20n03
ut20n03l
UT20
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5a6 diode
Abstract: UT20N03L
Text: UNISONIC TECHNOLOGIES CO., LTD UT20N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS ON < 20mΩ @ VGS=10V, ID =15A * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain 1.Gate 3.Source
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Original
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PDF
|
UT20N03
UT20N03L-TN3-R
UT20N03G-TN3-R
O-252
UT20N03G-K08-5060-R
QW-R502-139
5a6 diode
UT20N03L
|
UT20N03L
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT20N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS ON = 20mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain 1.Gate 3.Source
|
Original
|
PDF
|
UT20N03
UT20N03L-TN3-R
UT20N03G-TN3-R
O-252
UT20N03L-TN3-T
UT20N03G-TN3-T
UT20N03L-K08-5060-R
UT20N03G-K08-5060-R
QW-R502-at
UT20N03L
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