gallium phosphide band structure
Abstract: silicon carbide LED Zinc sulfide Sic led light emitting diode siemens monocrystalline efficiency Siemens LED visible light 35p0 siemens sic leds design
Text: Blue Light Emitting SiliconCarbide Diodes—Materials, Technology, Characteristics Appnote 31 by Dr. Claus Wyrich Siemens Research Laboratories Munich, Germany Introduction Light-emitting diodes LEDs are widely used in the field of electronics as indicator lamps and seven-segment displays
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Untitled
Abstract: No abstract text available
Text: International USSR Rectifier po-mois IRFBC40S/L PRELIMINARY HEXFET Power MOSFET • Surface Mount IRFBC40S • Low-profile through-hole (IRFBC40L) • Available in Tape & Reel (IRFBC40S) • Dynamic dv/dt Rating • 150°C Operating Temperature • Fast Switching
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IRFBC40S/L
IRFBC40S)
IRFBC40L)
554S2
G02T5
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ga200ts60u
Abstract: No abstract text available
Text: International USSR Rectifier p re lim in a ry "HALF-BRIDGE" IGBT INT-A-PAK PD'5058 G A 200TS60U Ultra-Fast Speed IGBT Features V qes = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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200TS60U
ga200ts60u
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TRIODE 6H13C
Abstract: Triode 6h7c 6H13C TUBE 6j1 V148T TRIODE 6C4C "Receiving Tubes" book 6H7C 6H16B 6H9c triode
Text: nPHEMHO-yCHJIHTEJIbHblE ilAMflbl RECEIVING TUBES v\n/y B /O „ M A U in P M B O P H H T O P r“ CCCP M OCKBA nPHEMHO-yCMJlMTEnbHblE riAM nbi RECEIVING TUBES K huto 2 Book 2 B/O „MALUnPMBOPMHTOPr“ CCCP MOCKBA V/O “ MASHPRIBORINTORG” USSR M O SCO W
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n03B0JIHeT
03HaK0MHTbCH
r-200,
30UL6C
JIO-3720/738
TRIODE 6H13C
Triode 6h7c
6H13C
TUBE 6j1
V148T
TRIODE 6C4C
"Receiving Tubes" book
6H7C
6H16B
6H9c triode
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6h2n
Abstract: 6N3P 6N16B 6X6C 6N6P-i 6e5p tube 6N17B 6N5P 6n2p 6N1P
Text: nPHEMHO-yCMilMTEnbHblE nAM nbi RECEIVING TUBES K huto 2 Book 2 B/O „MALLinPMEOPMHTOPr“ CCCP MOCKBA V/O “MASHPRIBORINTORG” USSR MOSCOW Ccc70 yd 13082.01 CnpaBo^HHK-KaTajior „npHeMHO-ycHjiHTejibHbie jiaMnbi“ n03B0jineT 03HaK0MHTbC5i c HOMeHKJiaTypOH H TeXHHqeCKHMH X â p a K T e pHCTHKâMH npHeMHOycHjiHTejibHbix jiaMn, KOTOpbie S K c n o p r a p y e T CoBeTCKHH Cok 3. CnpaBO^HHK-KaTajior npeziHasHa^eH
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Ccc70
n03B0jineT
03HaK0MHTbC5i
r-200,
Bon2000
30Z6S
30U6C
JIO-3720/738
6h2n
6N3P
6N16B
6X6C
6N6P-i
6e5p tube
6N17B
6N5P
6n2p
6N1P
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finder timer type 15.21
Abstract: D78243 RTL 8198 POWER COMMAND HM 1211 power controler RTL 8189 finder type 81.11 ussr a51 sf hen nec uPD78220 200QH
Text: u s e r ’s m a n u a l /¿PD78244 S U B -S E R IE S 8-B IT SINGLE-CHIP MICROCOMPUTER HARDWARE 078243 / P D 7 Q a 4 4 D ocu „, No. |EU_ , 3 6 e •D. No. /EU—747p) P m t e d UbllRhed m JapanA p ril 1 994 P USSR’S MANUAL uPD78244 S U B -S E R IE S
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/EU--747p)
uPD78244
D78243
finder timer type 15.21
D78243
RTL 8198
POWER COMMAND HM 1211 power controler
RTL 8189
finder type 81.11
ussr
a51 sf hen nec
uPD78220
200QH
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6j1 tube
Abstract: 6N16B 6N1P TUBE 6j1 TRIODE 6C4C 6H13C 6c8c tube 6H7C 6n1p-ew 6N24P
Text: nPHEMHO-yCMilMTEnbHblE nAM nbi RECEIVING TUBES K huto 2 Book 2 B/O „MALLinPMEOPMHTOPr“ CCCP MOCKBA V/O “MASHPRIBORINTORG” USSR MOSCOW Ccc70 yd 13082.01 CnpaBo^HHK-KaTajior „npHeMHO-ycHjiHTejibHbie jiaMnbi“ n03B0jineT 03HaK0MHTbC5i c HOMeHKJiaTypOH H TeXHHqeCKHMH X â p a K T e pHCTHKâMH npHeMHOycHjiHTejibHbix jiaMn, KOTOpbie S K c n o p r a p y e T CoBeTCKHH Cok 3. CnpaBO^HHK-KaTajior npeziHasHa^eH
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Ccc70
n03B0jineT
03HaK0MHTbC5i
r-200,
6H17B
30Z6S
30l46c
JIO-3720/738
6j1 tube
6N16B
6N1P
TUBE 6j1
TRIODE 6C4C
6H13C
6c8c tube
6H7C
6n1p-ew
6N24P
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IRG4BC30KD-S
Abstract: No abstract text available
Text: International IG R Rectifier euminaw 4 IR G B C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 30 PD9,594A K D -S Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tjc = 1 0 ms , @360V Vce start , T j = 125°C,
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IRFIP250
Abstract: TO-247 FULLPAK Package 9746 AN972
Text: International ioR Rectifier PD-9.746 IRFIP250 HEXFET Power MOSFET • • • • • • • Isolated Package DC Package solation= 4.0KVDC AC Package lsolation= 2.0KVRMS © Lead to Lead Creepage Dist.= 7.5mm Sink to Lead Creepage Dist.= 6.0mm Dynamic dv/dt Rating
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IRFIP250
O-247
UL1012.
TO-247 FULLPAK Package
9746
AN972
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DP6035L
Abstract: FDP6035L FDB6035L
Text: FAIRCHILD S E M IC O N D U C T O R Apnl 1998 tm F DP6035L/FD B6035L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's
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P6035L/FD
B6035L
FDP6035L
DP6035L
FDB6035L
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c235 diode
Abstract: No abstract text available
Text: PD - 9.1261D International IQ R Rectifier IRF7601 HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • N-Channel MOSFET • Very Small SOIC Package • Low Profile <1.1 mm • Available in Tape and Reel • Fast Switching Vdss =
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1261D
IRF7601
C-235
c235 diode
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Untitled
Abstract: No abstract text available
Text: March 1996 F A IR C H IL D SEM IC ONDUCTO R tm NDS356P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This
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NDS356P
NDS356P
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IRG4PC30UD
Abstract: No abstract text available
Text: International I R Rectifier P D 9.1462A IRG4PC30UD PRELIMINARY INSULATED GATE BIPOLAR TR A N SIST O R WITH ULTRAFAST SO FT R E C O V E R Y DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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IRG4PC30UD
O-247AC
IRG4PC30UD
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FDB6035AL
Abstract: FDP6035AL
Text: July 1998 FAIRCHILD MICDNDUCTDR- FDP6035AL/FDB6035AL N-Channel Logic Level PowerTrench MOSFET Features General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
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FDP6035AL/FDB6035AL
FDP6035AL
FDB6035AL
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IRFZ34
Abstract: IRFZ34 mosfet HI POWER 30A MOSFET
Text: PD-9.509B International IrêËI Rectifier IRFZ34 HEXFET P o w e r M O S F E T • • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V pss _ 60V ^D S on - 0 - 0 5 0 n 30A Description
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IRFZ34
0-050Q
O-220
IRFZ34
IRFZ34 mosfet
HI POWER 30A MOSFET
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T1N2
Abstract: diode j10v J10V FDB6670AL FDP6670AL
Text: F A IR C H IL D s e m ic o n d u c t o r J u ly 1 9 9 8 FDP6670AL/FDB6670AL N-Channel Logic Level PowerTrench™ MOSFET G eneral D escription Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC
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FDP6670AL/FDB6670AL
FDP6670AL
T1N2
diode j10v
J10V
FDB6670AL
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FDN338P
Abstract: SOIC-16 FDN338P T R
Text: March 1998 FAIRCHILD ì m ic o n d u c t o r FDN338P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOT™-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's
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FDN338P
FDN338P
SOIC-16
FDN338P T R
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Untitled
Abstract: No abstract text available
Text: March 1996 F A IR C H IL D SEM IC ONDUCTO R tm NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This
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NDS352P
NDS352P
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B7030
Abstract: FDP7030BL B7030BL DB7030BL FDB7030BL B703 zener diode reverse breakdown voltage 4.5V
Text: FAIRCHILD s e m ic o n d u c t o r J u ly 1 9 9 8 FDP7030BL/FDB7030BL N-Channel Logic Level PowerTrench™ MOSFET G eneral D escription Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC
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P7030B
B7030B
FDP7030BL
B7030
B7030BL
DB7030BL
FDB7030BL
B703
zener diode reverse breakdown voltage 4.5V
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385H
Abstract: IRFD120
Text: PD-9.385H International [rag Rectifier IRFD120 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling Description
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IRFD120
0-27O
385H
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NDS351N
Abstract: No abstract text available
Text: FAIRCHILD SEM IC ONDUCTO R March 1996 tm NDS351N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, D M O S technology. This
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NDS351N
S351N
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FDC633N
Abstract: SOIC-16
Text: FAIRCHILD ìm ic d n d u c t o M arch 1998 - r FDC633N N-Channel Enhancement Mode Field Effect Transistor Features General Description This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is
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FDC633N
OT-23
FDC633N
SOIC-16
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fdb fairchild
Abstract: FDB6030L FDP6030L
Text: FAIRCHILD S E M IC O N D U C T O R Apnl 1998 tm FDP6030L / FDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral D escription Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's
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FDP6030L
FDB6030L
NDP6030L/NDB6030L.
fdb fairchild
FDB6030L
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CD 1517
Abstract: IRFIBE20G
Text: PD-9.853 International |lOR]Rectifier IRFIBE20G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance D V D ss = 800V \ G y 3 ^DS on =
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IRFIBE20G
O-220
CD 1517
IRFIBE20G
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