SLHNNWH531T0
Abstract: Sunnix 6 LEDRR-08009662 sunnix
Text: Rev: ISSUE NO : 000 LEDRR-08009662 DATE OF ISSUE : SPECIFICATION MODEL : SLHNNWH531T0 HIGH POWER LED - SUNNIX CUSTOMER : SAMSUNG ELECTRO-MECHANICS DRAWN CHECKED APPROVED CUSTOMER CHECKED CHECKED APPROVED SAMSUNG ELECTRO-MECHANICS CO,.LTD. 314, MAETAN3-DONG, YEONGTONG-GU,
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LEDRR-08009662
SLHNNWH531T0
24hours
SLHNNWH531T0)
SLHNNWH531T0
Sunnix 6
LEDRR-08009662
sunnix
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Untitled
Abstract: No abstract text available
Text: Rev: 00. ISSUE NO : DATE OF ISSUE : 2006. 03. 01 SPECIFICATION MODEL : SLHNNBAL32ANT HIGH POWER LED PKG -SUNNIX CUSTOMER : SAMSUNG ELECTRO-MECHANICS CO,.LTD. 314, MAETAN3-DONG, YEONGTONG-GU, SUWON, GYUNGGI-DO,KOREA,442-743 SLHNNBAL32ANT 1/12 Contents 1. Product outline
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SLHNNBAL32ANT
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samsung SSE
Abstract: No abstract text available
Text: Rev: 00 ISSUE NO : DATE OF ISSUE : 2006. 03. 01 SPECIFICATION MODEL : SLHNNGAL32ANT HIGH POWER LED PKG -SUNNIX CUSTOMER : SAMSUNG ELECTRO-MECHANICS CO,.LTD. 314, MAETAN3-DONG, YEONGTONG-GU, SUWON, GYUNGGI-DO,KOREA,442-743 SLHNNGAL32ANT 1/12 Contents 1. Product outline
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SLHNNGAL32ANT
samsung SSE
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Untitled
Abstract: No abstract text available
Text: Rev: .00 ISSUE NO : DATE OF ISSUE : 2006. 03. 01 SPECIFICATION MODEL : SLHNNRAL32ANT HIGH POWER LED PKG -SUNNIX CUSTOMER : SAMSUNG ELECTRO-MECHANICS CO,.LTD. 314, MAETAN3-DONG, YEONGTONG-GU, SUWON, GYUNGGI-DO,KOREA,442-743 SLHNNRAL33ANT 1/12 Contents 1. Product outline
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SLHNNRAL32ANT
SLHNNRAL33ANT
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samsung usl CAPACITORS
Abstract: IP1dB 0402CS ALM-1106
Text: ALM-1106 GPS Low Noise amplifier with Variable bias current and Shutdown function Data Sheet Description Features Avago Technologies’s ALM-1106 is a LNA designed for GPS/ISM/Wimax applications in the 0.9-3.5 GHz frequency range. The LNA uses Agilent Technologies’s proprietary GaAs
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ALM-1106
ALM-1106
ALM-1106-TR1
ALM-1106-TR2
ALM-1106-BLK
5989-3889EN
AV01-0028EN
samsung usl CAPACITORS
IP1dB
0402CS
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samsung usl CAPACITORS
Abstract: ALM-1106-TR1G ALM-1106 0402CS
Text: ALM-1106 GPS Low Noise amplifier with Variable bias current and Shutdown function Data Sheet Description Features Avago Technologies’s ALM-1106 is a LNA designed for GPS/ISM/Wimax applications in the 0.9-3.5 GHz frequency range. The LNA uses Avago Technologies’s
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ALM-1106
ALM-1106
ALM-1106-TR1G
ALM-1106-TR2G
ALM-1106-BLKG
AV01-0028EN
AV02-1469EN
samsung usl CAPACITORS
ALM-1106-TR1G
0402CS
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Untitled
Abstract: No abstract text available
Text: Rev: 00 ISSUE NO : DATE OF ISSUE : 2006. 03. 01 SPECIFICATION MODEL : SLHNNWWL32ANT HIGH POWER LED PKG -SUNNIX CUSTOMER : SAMSUNG ELECTRO-MECHANICS CO,.LTD. 314, MAETAN3-DONG, YEONGTONG-GU, SUWON, GYUNGGI-DO,KOREA,442-743 SLHNNWWL32ANT 1/17 Contents 1. Product outline
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SLHNNWWL32ANT
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Untitled
Abstract: No abstract text available
Text: Rev: 00 ISSUE NO : DATE OF ISSUE : 2007. 03. 22 SPECIFICATION MODEL : SLHNNWHL32ANT HIGH POWER LED PKG -SUNNIX CUSTOMER : SAMSUNG ELECTRO-MECHANICS CO,.LTD. 314, MAETAN3-DONG, YEONGTONG-GU, SUWON, GYUNGGI-DO, KOREA,442-743 SLHNNWHL32ANT 1/14 Contents 1. Product outline
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SLHNNWHL32ANT
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Untitled
Abstract: No abstract text available
Text: ISSUE NO : Rev: DATE OF ISSUE : 2006. 11.03 SPECIFICATION MODEL : SLSNNGA825TS Green LED CUSTOMER : SAMSUNG ELECTRO-MECHANICS CO,.LTD. 314. MAETAN3-DONG, YEONGTONG-KU, SUWON-SI,KYUNGKI-DO,KOREA,442-743 SAMSUNG ELECTRO-MECHANICS SLSNNGA825TS 060810 1/14 Contents
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SLSNNGA825TS
SLSNNGA825TS
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Untitled
Abstract: No abstract text available
Text: ISSUE NO : LEDRR- Rev: 002 DATE OF ISSUE : 2006. 11. 03 SPECIFICATION MODEL : SLSNNRA825TS Red LED CUSTOMER : SAMSUNG ELECTRO-MECHANICS CO,.LTD. 314. MAETAN3-DONG, YEONGTONG-KU, SUWON-SI,KYUNGKI-DO,KOREA,442-743 SAMSUNG ELECTRO-MECHANICS SLSNNRA825TS 060907
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SLSNNRA825TS
SLSNNRA825TS
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Untitled
Abstract: No abstract text available
Text: ISSUE NO : Rev: DATE OF ISSUE : 2006. 08. 10 SPECIFICATION MODEL : SLSNNRA825TS Red FLASH LED CUSTOMER : Preliminary SAMSUNG ELECTRO-MECHANICS CO,.LTD. 314. MAETAN3-DONG, YEONGTONG-KU, SUWON-SI,KYUNGKI-DO,KOREA,442-743 SAMSUNG ELECTRO-MECHANICS SLSNNRA825TS 060810
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SLSNNRA825TS
SLSNNRA825TS
SLSNNRA825TS)
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KM49C512
Abstract: USL10 KM49C512Z
Text: KM49C512/USL CMOS DRAM 512K x9 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM49C512/L/SL is a CMOS high speed 524,288 bit x 9 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM49C512/USL
KM49C512/USL-7
KM49C512/USL-8
KM49C512/L/SL-10
100ns
130ns
150ns
180ns
KM49C512/L/SL
KM49C512
USL10
KM49C512Z
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM KM416C256/L/SL 256Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perfo rm ance range: The Samsung KM416C256/USL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM416C256/L/SL
256Kx
KM416C256/USL
130ns
KM416C256/L/SL-8
150ns
KM416C256/L/SL-10
KM416C256/L/SL-7
100ns
180ns
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km418c256
Abstract: No abstract text available
Text: KM418C256/USL CMOS DRAM 2 5 6 K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256/L/SL is a CMOS high speed 262,144 bit x 18 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM418C256/USL
KM418C256/L/SL
KM418C256/L/SL-7
130ns
KM418C256/Ã
150ns
KM418C256/L/SL-10
100ns
180ns
KM418C256/L/SL
km418c256
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km418c256
Abstract: KM418C256/L/SL-7
Text: KM418C256/L/SL CMOS DRAM 2 5 6 K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256/L/SL is a CMOS high speed 262,144 bit x 18 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM418C256/L/SL
KM418C256/L/SL-7
KM418C256/L/SL-8
KM418C256/USL-10
100ns
130ns
150ns
180ns
KM418C256/USL
KM418C256/L/SL
km418c256
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM KM48C512/L/SL 512K x8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM48C512/L/SL is a CMOS high speed 524,288 bit x 8 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM48C512/L/SL
KM48C512/L/SL
KM48C512/L/SL-7
130ns
KM48C512/USL-8
150ns
KM48C512/USL-10
100ns
180ns
28-LEAD
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km416c256
Abstract: KM416C256Z 416c256
Text: KM416C256/L/SL CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C256/L/SL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM416C256/L/SL
KM416C256/L/SL-7
KM416C256/L/SL-8
KM416C256/L/SL-10
100ns
130ns
150ns
180ns
KM416C256/L/SL
km416c256
KM416C256Z
416c256
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM KM416C256/L/SL 256Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perfo rm ance range: The Samsung KM416C256/L/SL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM416C256/L/SL
256Kx
KM416C256/L/SL
KM416C256/USL-7
130ns
KM416C256/USL-8
150ns
KM416C256/USL-10
100ns
180ns
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KM48C512
Abstract: No abstract text available
Text: \KM48C512/L/SL CMOS DRAM ,512Kx8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM48C512/L/SL is a CMOS high speed 524,288 bit x 8 Dynamic Random Access Memory. Its design is optimized for high performance applications
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\KM48C512/L/SL
512Kx8
KM48C512/USL-7
KM48C512/L/SL-8
KM48C512/L/SL-10
100ns
130ns
150ns
180ns
KM48C512/L/SL
KM48C512
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E D KM49C512/L/SL • 7 ^ 4 1 4 2 QQiaaTfi TDT «SriGK CMOS DRAM 512K x9 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: KM49C512/L/SL-7 KM49C512/L/SL-8 KM49C512/L/SL-10 I rac feie tRC
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KM49C512/L/SL
KM49C512/L/SL-7
KM49C512/L/SL-8
KM49C512/L/SL-10
130ns
150ns
100ns
180ns
cycle/16ms
cycle/128ms
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electrolytic ELITE
Abstract: No abstract text available
Text: QUALITY ASSURANCE and RELIABILITY PROGRAM 1. Introduction Samsung utilizes rigorous qualification and reliability programs to monitor the integrity of its devices. All industry stan dard {and various non-standard} stresses are run. Testing is done not only to collect data, but also to detect trends
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KSC945
KSD288
KSD288
168HRS)
200CYC)
electrolytic ELITE
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MIL-STD-883 PRESSURE COOKER
Abstract: No abstract text available
Text: QUALITY 1. ASSURANCE and R E L IA B IL IT Y PROGRAM Introduction Samsung utilizes rigorous qualification and reliability programs to monito the Integrity of its devices. All industry stan- dard and various non - standard stresses are run. Testing is done not only to collect data, but also to detect trends and produ
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168HRS)
1200cyc)
KSC945
KSD288
MIL-STD-883 PRESSURE COOKER
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E D • KM48C512/L/SL 7^4142 0D133bS 4b2 « S M Ö K CMOS DRAM 5 1 2 K x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM48C512/L/SL is a CMOS high speed 524,288 b it x 8 Dynamic Random Access Memory. Its
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KM48C512/L/SL
0D133bS
KM48C512/L/SL
KM48C512/USL-7
130ns
KM48C512/L/SL-8
150ns
100ns
180ns
KM48C512/L/SL-10
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KM418C256/L/SL-7
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bME D KM418C256/L/SL • 7 T b 4 m 2 GGlBMTb 12=5 « S U G K CMOS DRAM 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM418C256/L/SL is a C MOS high speed 262,144 b it x 18 D ynam ic Random A ccess M em ory. Its
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KM418C256/L/SL
KM418C256/L/SL
KM418C256/L/SL-7
KM418C256/L/SL-8
KM418C256/L/SL-10
130ns
150ns
100ns
180ns
KM418C256/L/SL-7
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