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    US5U3 Search Results

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    US5U3 Price and Stock

    ROHM Semiconductor US5U35TR

    MOSFET P-CH 45V 700MA TUMT5
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    DigiKey US5U35TR Cut Tape 2,985 1
    • 1 $0.72
    • 10 $0.624
    • 100 $0.4318
    • 1000 $0.30704
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    US5U35TR Reel 3,000
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    US5U35TR Digi-Reel 1
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    Avnet Americas US5U35TR Reel 3,000
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    Mouser Electronics US5U35TR
    • 1 $0.72
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    Verical US5U35TR 2,950 148
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    Chip1Stop US5U35TR Cut Tape 2,950
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    CoreStaff Co Ltd US5U35TR 50
    • 1 $0.159
    • 10 $0.154
    • 100 $0.149
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    ROHM Semiconductor US5U38TR

    MOSFET P-CH 20V 1A TUMT5
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    DigiKey US5U38TR Cut Tape 2,706 1
    • 1 $0.51
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    US5U38TR Reel 3,000
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    Verical US5U38TR 3,000 194
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    Bristol Electronics US5U38TR 989
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    Quest Components US5U38TR 791
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    Chip1Stop US5U38TR Cut Tape 3,000
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    CoreStaff Co Ltd US5U38TR 100
    • 1 $0.084
    • 10 $0.081
    • 100 $0.078
    • 1000 $0.078
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    ROHM Semiconductor US5U3TR

    MOSFET N-CH 30V 1.5A TUMT5
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey US5U3TR Cut Tape 2,639 1
    • 1 $0.62
    • 10 $0.542
    • 100 $0.375
    • 1000 $0.26664
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    US5U3TR Digi-Reel 1
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    US5U3TR Reel 3,000
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    CoreStaff Co Ltd US5U3TR 100
    • 1 $0.108
    • 10 $0.105
    • 100 $0.101
    • 1000 $0.1
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    ROHM Semiconductor US5U30TR

    MOSFET P-CH 20V 1A TUMT5
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    DigiKey US5U30TR Reel 3,000
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    Avnet Americas US5U30TR Reel 3,000
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    Mouser Electronics US5U30TR 3,112
    • 1 $0.64
    • 10 $0.569
    • 100 $0.388
    • 1000 $0.276
    • 10000 $0.213
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    Chip1Stop US5U30TR Cut Tape 100
    • 1 -
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    • 100 $0.11
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    CoreStaff Co Ltd US5U30TR 90
    • 1 $0.105
    • 10 $0.102
    • 100 $0.098
    • 1000 $0.097
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    US5U3 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    US5U3 ROHM IC DISCRETE DRIVE NCH AND SBD MOS FET 5TUMT Original PDF
    US5U3 ROHM 2.5V Drive Nch+SBD MOSFET Original PDF
    US5U30 ROHM Small switching (-20V, -1.5A) Original PDF
    US5U30TR ROHM Transistor Mosfet P-CH 20V 1A 5TSMT5 T/R Original PDF
    US5U30TR ROHM Small Switching (-20 V, -1.5 A) Original PDF
    US5U35TR ROHM 4V Drive Pch+SBD MOSFET; Package: TUMT5; Constitution materials list: Packing style: Taping; Package quantity: 3000; Original PDF
    US5U38TR ROHM 2.5V Drive Pch+SBD MOSFET; Package: TUMT5; Constitution materials list: Packing style: Taping; Package quantity: 3000; Original PDF
    US5U3TR ROHM 2.5V Drive Nch+SBD MOSFET; Package: TUMT5; Constitution materials list: Packing style: Taping; Package quantity: 3000; Original PDF

    US5U3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    US5U30

    Abstract: No abstract text available
    Text: US5U30 Transistor 2.5V Drive Pch+SBD MOS FET US5U30 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TUMT5 2.0 0.2 1.7 (2) (3) 0~0.1 0.2 (1) 0.77 (4) 2.1 (5) 0.15Max. 0.85Max. 1.3 0.65 0.65 1pin mark zFeatures 1) The US5U30 combines Pch MOS FET with a


    Original     		PDF US5U30 15Max. 85Max. US5U30

    US5U30

    Abstract: p-ch MOSfet
    Text: US5U30 Transistor Small switching –20V, –1.5A US5U30 (5) 0.2 (1) 1.7 2.0 (3) (2) 1.3 (4) 0.65 0.65 0.3 zExternal dimensions (Unit : mm) 0.2 0.77 0~0.1 0.85Max. 2.1 0.17 zFeatures 1) The US5U30 conbines Pch MOSFET with a Schottky barrier diode in a single TSMT5 package.


    Original     		PDF US5U30 85Max. US5U30 15Max. p-ch MOSfet

    Untitled

    Abstract: No abstract text available
    Text: US5U35 Transistor 4V Drive Pch+SBD MOSFET US5U35 zStructure Silicon P-channel MOSFET Schottky Barrier DIODE zDimensions Unit : mm TUMT5 2.0 zFeatures 1) The US5U35 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) With fast switching.


    Original     		PDF US5U35 US5U35

    125 diode

    Abstract: US5U30
    Text: US5U30 Transistor 2.5V Drive Pch+SBD MOSFET US5U30 zStructure Silicon P-channel MOSFET Schottky Barrier DIODE zDimensions Unit : mm TUMT5 2.0 zFeatures 1) The US5U30 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-state resistance with fast switching.


    Original     		PDF US5U30 US5U30 125 diode

    74318

    Abstract: BV45 78345 DIODE 851
    Text: SPICE PARAMETER US5U35 * US5U35 PMOSFET model * Date: 2008/01/30 *D G S .SUBCKT US5U35 1 2 3 M1 11 22 3 3 MOS_P D1 1 3 DDS R1 1 11 RTH .485 D2 11 21 DDG D3 22 21 DDG R2 2 22 100 .MODEL MOS_P PMOS + LEVEL=3 + L=2.0000E-6 + W=1 + KP=2.4783E-6 + RS=10.000E-3


    Original     		PDF US5U35 US5U35 0000E-6 4783E-6 000E-3 000E6 0000E-3 916E-15 74318 BV45 78345 DIODE 851

    Untitled

    Abstract: No abstract text available
    Text: US5U35 Transistor 4V Drive Pch+SBD MOSFET US5U35 Structure Silicon P-channel MOSFET Schottky Barrier DIODE Dimensions Unit : mm TUMT5 2.0 Features 1) The US5U35 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) With fast switching.


    Original     		PDF US5U35 US5U35

    Untitled

    Abstract: No abstract text available
    Text: US5U3 Transistors 2.5V Drive Nch+SBD MOSFET US5U3 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions Unit : mm TUMT5 2.0 (2) (3) 0~0.1 1pin mark 0.2 (1) 0.77 (4) 1.7 (5) 2.1 zFeatures 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package.


    Original     		PDF 15Max. 85Max.

    Untitled

    Abstract: No abstract text available
    Text: US5U3 Transistors 2.5V Drive Nch+SBD MOSFET US5U3 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions Unit : mm TUMT5 2.0 zFeatures 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance.


    Original     		PDF

    transistors mos

    Abstract: No abstract text available
    Text: US5U3 Transistors 2.5V Drive Nch+SBD MOS FET US5U3 zStructure Silicon N-channel MOS FET / Schottky barrier diode zExternal dimensions Unit : mm TUMT5 2.0 (2) (3) 0~0.1 1pin mark 0.2 (1) 0.77 (4) 1.7 (5) 2.1 zFeatures 1) Nch MOS FET and schottky barrier diode


    Original     		PDF 15Max. 85Max. transistors mos

    US5U30

    Abstract: No abstract text available
    Text: US5U30 Transistor Small switching –20V, –1.5A US5U30 (5) 0.2 (1) 1.7 2.0 (3) (2) 1.3 (4) 0.65 0.65 0.3 zExternal dimensions (Unit : mm) 0.2 0.77 0~0.1 0.85Max. 2.1 0.17 zFeatures 1) The US5U30 conbines Pch MOSFET with a Schottky barrier diode in a single TSMT5 package.


    Original     		PDF US5U30 85Max. US5U30 15Max.

    Untitled

    Abstract: No abstract text available
    Text: US5U3 Transistors 2.5V Drive Nch+SBD MOSFET US5U3 Structure Silicon N-channel MOSFET / Schottky barrier diode Dimensions Unit : mm TUMT5 2.0 Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance.


    Original     		PDF

    US5U30

    Abstract: M1 DIODE schottky
    Text: SPICE PARAMETER US5U30 by ROHM TR Div. * US5U30 PMOSFET model * Date: 2006/09/15 * This model includes a diode between drain and source. *D G S .SUBCKT US5U30 1 2 3 M1 1 2 3 3 MOS_P D1 1 3 DREV .MODEL MOS_P PMOS + LEVEL=3 + L=2.0000E-6 + W=1


    Original     		PDF US5U30 US5U30 0000E-6 3760E-6 000E-3 0000E6 00E-12 974E-12 M1 DIODE schottky

    Untitled

    Abstract: No abstract text available
    Text: US5U30 Transistor 2.5V Drive Pch+SBD MOSFET US5U30 Structure Silicon P-channel MOSFET Schottky Barrier DIODE Dimensions Unit : mm TUMT5 2.0 0.2Max. 1.3 Features 1) The US5U30 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-state resistance with fast switching.


    Original     		PDF US5U30 US5U30

    Untitled

    Abstract: No abstract text available
    Text: US5U38 Transistor 2.5V Drive Pch+SBD MOSFET US5U38 Dimensions Unit : mm Structure Silicon P-channel MOSFET Schottky Barrier DIODE TUMT5 2.0 Features 1) The US5U38 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-resistance with fast switching.


    Original     		PDF US5U38 US5U38

    0565

    Abstract: No abstract text available
    Text: SPICE PARAMETER US5U3 by ROHM TR Div. * US5U3 NMOSFET model * Date: 2006/09/19 * This model includes a diode between source and drain. *D G S .SUBCKT US5U3 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 + W=1 + KP=12.595E-6


    Original     		PDF 0000E-6 595E-6 000E-3 0000E6 39E-12 724E-12 550E-12 0000E-3 8843E-12 0565

    Untitled

    Abstract: No abstract text available
    Text: US5U38 Transistor 2.5V Drive Pch+SBD MOSFET US5U38 zDimensions Unit : mm zStructure Silicon P-channel MOSFET Schottky Barrier DIODE TUMT5 2.0 zFeatures 1) The US5U38 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-resistance with fast switching.


    Original     		PDF US5U38 US5U38

    RSD130P10

    Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND
    Text: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑໳ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒໛ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨ‫ܼׅ‬DŽ 01 MOSFET Contents


    Original     		PDF RUM002N02 RZM002P02 RUE002N02 RZE002P02 RUM002N05 RUE002N05 RZF013P01 RZL025P01 RZR020P01 RW1A013ZP RSD130P10 rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    RSD130P10

    Abstract: RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200
    Text: 2010 Product Catalog Discrete Semiconductors MOSFETs MOSFETs ROHM offers a wide selection of MOSFETs, ranging from ultra-low ON-resistance products utilizing micro-process technology, high efficiency/breakdown units for switching applications, and high power components optimized for commercial/industrial systems.


    Original     		PDF 5V/60V R0039A 52P6214E RSD130P10 RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200

    2SA2160

    Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
    Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series


    Original     		PDF O-220FM 47P4869E 2SA2160 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027

    2sk3808

    Abstract: 2SK3807 2sk3805 2sk3806 Shortform Transistor Guide sp8m3 RSQ035P03 RTQ035P02 FET SP8M4 sp8m5
    Text: Transistors MOS FET 1. Can be used with automatic placement machines. Available in a wide variety of packages. Like bipolar transistors, taped MOS FETs are available for assembly lines using automatic placement equipment. 2. MOS FETs operating from 4 volts and 2.5 volts


    Original     		PDF RSS140N03 O-220FN 2SK2095N 2SK2713 2SK2299N 2SK2793 2SK2792 2SK2740 /products/shortform/21trstr/trstr1 2sk3808 2SK3807 2sk3805 2sk3806 Shortform Transistor Guide sp8m3 RSQ035P03 RTQ035P02 FET SP8M4 sp8m5

    sp8k10s

    Abstract: SP8K10 rsd220n06 RRS100P03 RTR011P02 SP8M41 RRS075P03 RRR035N03 rss065n06 R6010ANX
    Text: 2009 Product Catalog Discrete Semiconductors MOSFETs MOSFETs ROHM offers a wide selection of MOSFETs, ranging from ultra-low ON-resistance products utilizing micro-process technology, high efficiency/breakdown units for switching applications, and high power components optimized for commercial/industrial systems.


    Original     		PDF R0039A 51P6023E sp8k10s SP8K10 rsd220n06 RRS100P03 RTR011P02 SP8M41 RRS075P03 RRR035N03 rss065n06 R6010ANX

    2sc5922

    Abstract: 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982
    Text: -Transistors ◆MOS FET Series ◆Low Vce sat Super-mini Transistors Series ◆Strong Discharge Voltage/ High Speed Switching Transistors Series ◆Muting Transistors Series MOS FET Series Power MOS FET Series Series Features Low RDs(on) High ESD capability


    Original     		PDF 200mW 500mW 15Min. 85Max. 15Max. 2sc5922 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982