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    US5881EUA HALL EFFECT SENSOR Search Results

    US5881EUA HALL EFFECT SENSOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    US5881EUA HALL EFFECT SENSOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    hall effect sensor based non contact tachometer f

    Abstract: hall effect sensor based non contact tachometer for electrical motors speed measurements u18 sensor hall hall sensor u18 FLUXGATE MLX90237 US5881EUA application note schematic inductive proximity sensor hall switch ignition u18 hall
    Text: 3 Section 3 - Applications Section 3 - Applications Introduction Solid-state switches have been available for many years. In various applications, Hall- Effect Sensors Hall ICs have replaced mechanical contact switches completely. In the mid 1980’s the ignition points in automobiles


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    Melexis MLX80103

    Abstract: MLX90275LSE
    Text: Short Form Catalog Revision 8.1 Small things make a big difference. 2 Table of Contents At Melexis we Our activities & Product TECHNOLOGY.5


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