US 945 MOSFET Search Results

US 945 MOSFET Result Highlights (5)

Part	Manufacturer	Description
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

US 945 MOSFET Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MRF9030 Abstract: MRF9030LSR1 MRF9030R1 Text: MOTOROLA Order this document by MRF9030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9030/D MRF9030R1 MRF9030LSR1 MRF9030R1 MRF9030 MRF9030LSR1	PDF
us 945 mosfet Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9030MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies	Original	MRF9030M/D MRF9030MR1 us 945 mosfet	PDF
MRF181 Abstract: 300 uF 450 VDC Mallory Capacitor MRF181SR1 Text: MOTOROLA Order this document by MRF181/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF181SR1 MRF181ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF181/D MRF181SR1 MRF181ZR1 MRF181/D MRF181 300 uF 450 VDC Mallory Capacitor	PDF
93F2975 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9060/D MRF9060 MRF9060S MRF9060SR1 93F2975	PDF
motorola MOSFET 935 Abstract: MRF9060 MRF9060LR1 MRF9060LSR1 MRF9060S Text: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9060/D MRF9060LR1 MRF9060LSR1 MRF9060LR1 motorola MOSFET 935 MRF9060 MRF9060LSR1 MRF9060S	PDF
MRF9030L Abstract: motorola MOSFET 935 MRF9030 MRF9030LR1 MRF9030LSR1 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9030/D MRF9030LR1 MRF9030LSR1 MRF9030LR1 MRF9030L motorola MOSFET 935 MRF9030 MRF9030LSR1	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9030/D MRF9030LR1 MRF9030LSR1 MRF9030/D	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9045MR1/D MRF9045MR1 MRF9045MBR1	PDF
MRF9060L Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9060/D MRF9060R1 MRF9060LSR1 MRF9060/D MRF9060L	PDF
RF-35-0300 Abstract: MRF9060 MRF9060LSR1 MRF9060R1 MRF9060S MRF9060L Text: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9060/D MRF9060R1 MRF9060LSR1 MRF9060R1 RF-35-0300 MRF9060 MRF9060LSR1 MRF9060S MRF9060L	PDF
MRF9060 Abstract: MRF9060R1 MRF9060S MRF9060SR1 MRF9060 equivalent Text: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9060/D MRF9060R1 MRF9060SR1 MRF9060R1 MRF9060 MRF9060S MRF9060SR1 MRF9060 equivalent	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9030/D MRF9030 MRF9030S MRF9030SR1 MRF9030/D	PDF
MRF9030 Abstract: MRF9030R1 MRF9030SR1 Text: MOTOROLA Order this document by MRF9030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9030/D MRF9030R1 MRF9030SR1 MRF9030R1 MRF9030 MRF9030SR1	PDF
93F2975 Abstract: transistor WB1 Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies	Original	MRF9060M/D MRF9060MBR1 DEVICEMRF9060M/D 93F2975 transistor WB1	PDF

Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies	Original	MRF9060M/D MRF9060MBR1 DEVICEMRF9060M/D	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9060/D MRF9060 MRF9060S MRF9060SR1 MRF9060/D	PDF
mrf9045l Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9045/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9045/D MRF9045LR1 MRF9045LSR1 MRF9045/D mrf9045l	PDF
A113 Abstract: MRF9045MBR1 MRF9045MR1 Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9045MR1 MRF9045MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Freescale Semiconductor, Inc.	Original	MRF9045MR1/D MRF9045MR1 MRF9045MBR1 MRF9045MR1 A113 MRF9045MBR1	PDF
MRF9045 Abstract: MRF9045S MRF9045SR1 Text: MOTOROLA Order this document by MRF9045/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9045/D MRF9045 MRF9045S MRF9045SR1 MRF9045 MRF9045S MRF9045SR1	PDF
MRF9045R1 Abstract: MRF9045 MRF9045S MRF9045SR1 300 Volt mosfet schematic circuit Text: MOTOROLA Order this document by MRF9045/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9045/D MRF9045R1 MRF9045SR1 MRF9045R1 MRF9045 MRF9045S MRF9045SR1 300 Volt mosfet schematic circuit	PDF
MRF184 Abstract: MRF184S MRF184SR1 173 MHz RF CHIP Text: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF184/D MRF184 MRF184S MRF184SR1 173 MHz RF CHIP	PDF
MRF9045MBR1 Abstract: MRF9045MR1 6020G Text: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9045MR1/D MRF9045MR1 MRF9045MBR1 MRF9045MBR1 6020G	PDF
RF3-50 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9045MR1/D MRF9045MR1 MRF9045MBR1 MRF9045MR1/D RF3-50	PDF
motorola MOSFET 935 Abstract: XRF184 MRF184 MRF184S 173 MHz RF CHIP Text: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF184/D MRF184 MRF184S motorola MOSFET 935 XRF184 MRF184S 173 MHz RF CHIP	PDF

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US 945 MOSFET Search Results

US 945 MOSFET Result Highlights (5)

US 945 MOSFET Datasheets Context Search

MRF9030

us 945 mosfet

MRF181

93F2975

motorola MOSFET 935

MRF9030L

Untitled

Untitled

MRF9060L

RF-35-0300

MRF9060

Untitled

MRF9030

93F2975

Untitled

Untitled

mrf9045l

A113

MRF9045

MRF9045R1

MRF184

MRF9045MBR1

RF3-50

motorola MOSFET 935