upg 506
Abstract: No abstract text available
Text: UPG130GR UPG131GR L-BAND SPDT MMIC SWITCH FEATURES_ • HIGH OUTPUT POWER: 2 W att M inimum UPG130GR • LOW INSERTION LOSS: 0.6 dB Typical at 2.0 GHz • LOW CONTROL CURRENT: 50 |M Maximum • SMALL 8 PIN SOP PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE
|
OCR Scan
|
PDF
|
UPG130GR
UPG131GR
UPG130GR)
1000/Reel
1000/Reel
UPG131GR
UPG130GR:
UPG131GR:
b42752S
upg 506
|
saa 1068
Abstract: T 927 SAA 1006 saa 1070
Text: L-BAND SPDT MMIC SWITCH ^ G130GR UPG131GR FEATURES_ • HIGH OUTPUT POWER: 2 Watt Minimum UPG130GR • LOW INSERTION LOSS: 0.6 dB Typical at 2.0 GHz • LOW CONTROL CURRENT: 50 nA Maximum • SMALL 8 PIN SOP PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE
|
OCR Scan
|
PDF
|
UPG130GR)
G130GR
UPG131GR
UPG130GR
UPG131GR
PG130G
R/UPG131GR
1000/Reel
1000/Reel
saa 1068
T 927
SAA 1006
saa 1070
|
Untitled
Abstract: No abstract text available
Text: UPG130GR UPG131GR L-BAND SPDT MMIC SWITCH FEATURES • HIGH OUTPUT POWER: 2 Watt Minimum UPG130GR • LOW INSERTION LOSS: 0.6 dB Typical at 2.0 GHz . LOW CONTROL CURRENT: 50 nA Maximum • SMALL 8 PIN SOP PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE
|
OCR Scan
|
PDF
|
UPG130GR)
UPG130GR
UPG131GR
UPG131GR
|
Untitled
Abstract: No abstract text available
Text: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS E M r M O w m I h M m • Ta • « P C RLm dB Rlour (dB) IS0L (dB) «1. P tclsft N * MAX TYP TYP TYP Cot* ucsw ^iw i No. 45 60 10 10 40 B08 Hermetic Metal Ceramic 6-4 70 100 140 8 8 40 B08 Hermetic Metal Ceramic
|
OCR Scan
|
PDF
|
UPG100B
UPG101B
UPG103B
UPG503B
UPG506B
UPG501P
UPG502P
UPG503P
UPG506P
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC GaAs INTEGRATED CIRCUIT /fPG132G L-BAND SPDT SWITCH DESCRIPTION /¿PG132G is an L-Band SPDT Single Pole D oubleThrow GaAs FET switch w hich w as developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss.
|
OCR Scan
|
PDF
|
uPG132G
PG132G
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC GaAs INTEGRATED CIRCUIT /¿PG132G L-BAND SPDT SWITCH DESCRIPTION ¿¡PG132G is an L-Band SPDT Single Pole Double Throw GaAs FET switch w hich was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss.
|
OCR Scan
|
PDF
|
uPG132G
PG132G
VP15-00-2
WS60-00-1
10535EJ7V0IF00)
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC GaAs INTEGRATED CIRCUIT /iPG133G L-BAND SPDT SWITCH DESCRIPTION UPG133G is an L-BandSPDT Single Pole DoubleThrow GaAs FET switch which was developed fordigital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss.
|
OCR Scan
|
PDF
|
uPG133G
|