UPG103B
Abstract: No abstract text available
Text: LOW NOISE WIDE-BAND AMPLIFIER UPG103B EQUIVALENT CIRCUIT FEATURES VDD • ULTRA WIDE-BAND: 50 MHz to 3 GHz • LOW NOISE: 4 dB TYP at f = 1 GHz C1 C2 L3 • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Ω • HERMETICALLY SEALED PACKAGES ASSURE RL1 HIGH RELIABILITY
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UPG103B
UPG103B
24-Hour
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UPG103B
Abstract: No abstract text available
Text: LOW NOISE WIDE-BAND AMPLIFIER UPG103B EQUIVALENT CIRCUIT FEATURES • ULTRA WIDE-BAND: 50 MHz to 3 GHz • LOW NOISE: 4 dB TYP at f = 1 GHz VDD C1 C2 L3 • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Ω • HERMETICALLY SEALED PACKAGES ASSURE RL1 HIGH RELIABILITY
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UPG103B
UPG103B
24-Hour
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C1678
Abstract: c1677 UPC1678B UPG100B uPG101 MARKING 106 UPG101B G100 G101 G103
Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. B08 1.27±0.1 1.27±0.1 LEADS 2, 4, 6, 8 0.6 0.4 (LEADS 1, 3, 5, 7) 4 3 2 MARKING 10.6 MAX 1 5 3.8±0.2 6 7 8 3.8±0.2 10.6 MAX 1.7 MAX
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UPC1677B
C1677
UPC1678B
C1678
UPG100B
UPG101B
UPG103B
24-Hour
C1678
c1677
UPC1678B
UPG100B
uPG101
MARKING 106
UPG101B
G100
G101
G103
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT UPG103B WIDE-BAND AMPLIFIER ¿¡PG103B is GaAs integrated circuit designed as w ide band 50 MHz to 3GHz am plifiers. This device is most suitable for the microwave com m unication system and the m easurem ent equipm ent.
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UPG103B
PG103B
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UPG103A
Abstract: uPG103 UPG103B UPG103P TCB 44
Text: SEC LOW NOISE WIDE-BAND AMPLIFIER UPG103A UPG103B UPG103P FEATURES DESCRIPTION • ULTRA WIDE-BAND: 50 MHz to 3 GHz The UPG103 is a GaAs monolithic integrated circuit designed as a low noise amplifier from 50 MHz to 3 GHz. The device is most suitable for the IF stage of microwave communication
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UPG103A
UPG103B
UPG103P
UPG103
UPG103P
TCB 44
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Untitled
Abstract: No abstract text available
Text: LOW NOISE WIDE-BAND AMPLIFIER UPG103B EQUIVALENT CIRCUIT F E A T U R E S _ Vdd • ULTRA WIDE-BAND: 50 MHz to 3 GHz • LOW NOISE: 4 dB TYP at f = 1 GHz . INPUT/OUTPUT IMPEDANCE MATCHED TO 50 O - HERMETICALLY SEALED PACKAGES ASSURE HIGH RELIABILITY
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UPG103B
UPG103B
b4Z75E5
00bbD3b
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Untitled
Abstract: No abstract text available
Text: LOW NOISE WIDE-BAND AMPLIFIER UPG103B EQUIVALENT CIRCUIT FEATURES_ Vdd • ULTRA WIDE-BAND: 50 MHz to 3 GHz • LOW NOISE: 4 dB TYP at f - 1 GHz • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Cl • HERMETICALLY SEALED PACKAGES ASSURE HIGH RELIABILITY
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UPG103B
UPG103B
UPG10p
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT UPG103B WIDE-BAND AMPLIFIER /xP G 103B is G a A s in te g ra te d c irc u it d e s ig n e d as w id e ba nd 50 M H z to 3G H z a m p lifie rs . T h is d e v ic e is m ost s u ita b le fo r th e m ic ro w a v e c o m m u n ic a tio n syste m and th e m e a su re m e n t e q u ip m e n t.
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UPG103B
PG103B
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Untitled
Abstract: No abstract text available
Text: NEC LOW NOISE WIDE-BAND AMPLIFIER UPG103A UPG103B UPG103P FEATURES DESCRIPTION • ULTRA WIDE-BAND: 50 MHz to 3 GHz The UPG103 is a GaAs monolithic integrated circuit designed as a low noise amplifier from 50 MHz to 3 GHz. The device is most suitable for the IF stage of microwave communication
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UPG103A
UPG103B
UPG103P
UPG103
UPG103P,
UPG103A,
UPG103B,
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Untitled
Abstract: No abstract text available
Text: LOW NOISE WIDE-BAND AMPLIFIER UPG103B UPG103P EQUIVALENT CIRCUIT FEATURES_ • ULTRA WIDE-BAND: 50 MHz to 3 GHz • LOW NOISE: 4 dB TYP at f = 1 GHz vdd • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 i l • HERMETICALLY SEALED PACKAGES ASSURE
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UPG103B
UPG103P
UPG103
UPG103P,
UPG103B.
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Untitled
Abstract: No abstract text available
Text: LOW NOISE WIDE-BAND AMPLIFIER FEATURES_ UPG103B EQUIVALENT CIRCUIT VDD • ULTRA WIDE-BAND: 50 MHz to 3 GHz • LOW NOISE: 4 dB TYP at f = 1 GHz • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 ft • HERMETICALLY SEALED PACKAGES ASSURE HIGH RELIABILITY
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UPG103B
UPG103B
34-6393/FAX
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS E M r M O w m I h M m • Ta • « P C RLm dB Rlour (dB) IS0L (dB) «1. P tclsft N * MAX TYP TYP TYP Cot* ucsw ^iw i No. 45 60 10 10 40 B08 Hermetic Metal Ceramic 6-4 70 100 140 8 8 40 B08 Hermetic Metal Ceramic
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UPG100B
UPG101B
UPG103B
UPG503B
UPG506B
UPG501P
UPG502P
UPG503P
UPG506P
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Untitled
Abstract: No abstract text available
Text: G a A s Monolithic Circuits Wideband Amplifiers Frequency Teat Gain Range Conditions dB AG (dB) RU n R L out (dB) TYP ISOL (dB) TYP P*fl- Pacta 99 FaxOn Demand TYP MAX TYP MIN (mA) TYP MAX (dB) TYP UPG100B 0.05 to 3.0 V dd = +5V V gg = -5V 16 ±1.5 2.7 +6
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UPG100B
UPG101B
UPG103B
UPG110B
UPG100P
UPG101P
flB08
UPG503B
UPG506B
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