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    UPG103A Search Results

    UPG103A Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPG103A NEC Gallium arsenide integrated circuit Original PDF
    UPG103A NEC Low Noise Wideband Amplifier Scan PDF
    UPG103A(1) NEC Gallium arsenide integrated circuit Original PDF

    UPG103A Datasheets Context Search

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    UPG103A

    Abstract: uPG103 UPG103B UPG103P TCB 44
    Text: SEC LOW NOISE WIDE-BAND AMPLIFIER UPG103A UPG103B UPG103P FEATURES DESCRIPTION • ULTRA WIDE-BAND: 50 MHz to 3 GHz The UPG103 is a GaAs monolithic integrated circuit designed as a low noise amplifier from 50 MHz to 3 GHz. The device is most suitable for the IF stage of microwave communication


    OCR Scan     		PDF UPG103A UPG103B UPG103P UPG103 UPG103P TCB 44

    Untitled

    Abstract: No abstract text available
    Text: NEC LOW NOISE WIDE-BAND AMPLIFIER UPG103A UPG103B UPG103P FEATURES DESCRIPTION • ULTRA WIDE-BAND: 50 MHz to 3 GHz The UPG103 is a GaAs monolithic integrated circuit designed as a low noise amplifier from 50 MHz to 3 GHz. The device is most suitable for the IF stage of microwave communication


    OCR Scan     		PDF UPG103A UPG103B UPG103P UPG103 UPG103P, UPG103A, UPG103B,

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720