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    UPF1060 Search Results

    UPF1060 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPF1060 Cree 60W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF
    UPF1060 Cree LDMOS FETs in Class AB Operation Cellular to 1 GHz Original PDF
    UPF1060F Cree FET Transistor, 60W, 1.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    UPF1060P Cree FET Transistor, 60W, 1.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF

    UPF1060 Datasheets Context Search

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    UPF1060

    Abstract: POWER 28V 3A 60W ultrarf
    Text: URFDB Sec 06_1060 11/3/99 10:51 AM Page 6-1 UPF1060 60W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA,


    Original     		PDF UPF1060 30dBc UPF1060 POWER 28V 3A 60W ultrarf

    UPF1060F

    Abstract: UPF1060P UPF1060 POWER 28V 3A 60W J027
    Text: UPF1060 60W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with a minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original     		PDF UPF1060 30dBc UPF1060F UPF1060P UPF1060 UPF1060F UPF1060P POWER 28V 3A 60W J027