Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    UPB2010B Search Results

    UPB2010B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    UPB2010B Cree 10W, 2.0GHz, 24V Broadband RF Power NPN Bipolar Transistor Original PDF

    UPB2010B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J645

    Abstract: J626 transistor J626 ultrarf UPB2010B J626 Transistor
    Text: URFDB Sec 03_2010B 11/3/99 10:31 AM Page 3-42 UPB2010B 10W, 2.0GHz, 24V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 2.0GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM,


    Original
    PDF 2010B UPB2010B 30dBc 130mA 100oC 175oC J645 J626 transistor J626 ultrarf UPB2010B J626 Transistor