UPA1 Search Results

UPA1 Result Highlights (5)

Part	Manufacturer	Description
UPA1717G-E1-A	Renesas Electronics Corporation	N Channel Power MOSFET
UPA1725G-E1-AT	Renesas Electronics Corporation	Power MOSFETs for Automotive
UPA1743TP-E1-AZ	Renesas Electronics Corporation	N Channel Power MOSFET
UPA1763G-E1-A	Renesas Electronics Corporation	Power MOSFETs for Automotive
UPA1919TE-T1-AT	Renesas Electronics Corporation	Power MOSFETs for Automotive

UPA1 Price and Stock

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Nichicon Corporation UPA1E271MPD CAP ALUM 270UF 20% 25V RADIAL TH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	UPA1E271MPD	Bulk	2,981		1	1 $0.73 10 $0.491 100 $0.3227 1000 $0.21428 10000 $0.18907	Buy Now
TME	UPA1E271MPD				3,000	1 - 10 - 100 - 1000 - 10000 $0.108	Get Quote
Nichicon Corporation UPA1E102MPD CAP ALUM 1000UF 20% 25V RADIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	UPA1E102MPD	Bulk	2,128		1	1 $1.44 10 $0.905 100 $0.6231 1000 $0.5088 10000 $0.40666	Buy Now
Newark	UPA1E102MPD	Bulk			1,200	1 - 10 - 100 - 1000 $0.422 10000 $0.357	Buy Now
TME	UPA1E102MPD				200	1 - 10 - 100 - 1000 $0.387 10000 $0.387	Get Quote
Avnet Abacus	UPA1E102MPD			39 Weeks	4,800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Nichicon Corporation UPA1A561MPD1TA CAP ALUM 560UF 20% 10V RADIAL TH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	UPA1A561MPD1TA	Ammo Pack	2,000		1,000	1 - 10 - 100 - 1000 $0.21428 10000 $0.17647	Buy Now
	UPA1A561MPD1TA	Cut Tape	2,000		1	1 $0.73 10 $0.491 100 $0.3227 1000 $0.2521 10000 $0.2521	Buy Now
Nichicon Corporation UPA1A471MPD1TA CAP ALUM 470UF 20% 10V RADIAL TH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	UPA1A471MPD1TA	Cut Tape	1,998		1	1 $0.78 10 $0.473 100 $0.3136 1000 $0.24908 10000 $0.24908	Buy Now
	UPA1A471MPD1TA	Ammo Pack	1,000		1,000	1 - 10 - 100 - 1000 $0.22895 10000 $0.18381	Buy Now
Avnet Abacus	UPA1A471MPD1TA			48 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Nichicon Corporation UPA1A821MPD CAP ALUM 820UF 20% 10V RADIAL TH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	UPA1A821MPD	Bulk	1,889		1	1 $0.7 10 $0.469 100 $0.3085 1000 $0.24098 10000 $0.18074	Buy Now

Find more UPA1 price and stock on Findchips.com

UPA1 Datasheets (500)

Part	Manufacturer	Description	Datasheet Type	PDF
UPA-100	Mueller Electric Company	POWER ALERT	Original	PDF
UPA-100C	Mueller Electric Company	UNIVERSAL POWER ALERT CAT III-CA	Original	PDF
UPA-100S	Mueller Electric Company	UNIVERSAL POWER ALERT-SOLID ON	Original	PDF
UPA101	Hynix Semiconductor	12x8 CROSSPOINT SWITCH WITH CONTROL MEMORY	Original	PDF
uPA101	NEC	Semiconductor Selection Guide	Original	PDF
uPA101	NEC	Semiconductor Selection Guide 1995	Original	PDF
uPA101	NEC	HIGH FREQUENCY NPN TRANSISTOR ARRAY	Original	PDF
UPA101B	Hynix Semiconductor	12x8 CROSSPOINT SWITCH WITH CONTROL MEMORY	Original	PDF
UPA101B	NEC	Ultra-high-frequency NPN transistor array	Original	PDF
UPA101B	California Eastern Laboratories	Transistor - Datasheet Reference	Scan	PDF
UPA101B-E1	Hynix Semiconductor	12x8 CROSSPOINT SWITCH WITH CONTROL MEMORY	Original	PDF
uPA101B-E1	NEC	HIGH FREQUENCY NPN TRANSISTOR ARRAY	Original	PDF
UPA101G	Hynix Semiconductor	12x8 CROSSPOINT SWITCH WITH CONTROL MEMORY	Original	PDF
UPA101G	NEC	Ultra-high-frequency NPN transistor array	Original	PDF

UPA101G	California Eastern Laboratories	Transistor - Datasheet Reference	Scan	PDF
UPA101G-E1	Hynix Semiconductor	12x8 CROSSPOINT SWITCH WITH CONTROL MEMORY	Original	PDF
UPA101G-E1	NEC	Ultra-high-frequency NPN transistor array	Original	PDF
uPA101G-E1	NEC	TRANS GP BJT NPN 6V 0.04A 8SOP	Original	PDF
UPA101G-E1	NEC	TRANSISTOR ARRAY	Original	PDF
UPA101G-E2	NEC	Ultra-high-frequency NPN transistor array	Original	PDF

...

UPA1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
a103g Abstract: a103g transistors transistor micro-x q6 Monolithic Transistor Pair UPA103G UPA103G-E1 Text: TRANSISTOR ARRAY FEATURES UPA103G CONNECTION DIAGRAM Top View • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers UPA103G 14 • OUTSTANDING hFE LINEARITY 13 12 11 10 9 8 SUB • SMALL PACKAGE	Original	UPA103G UPA103G 2500/REEL A103G UPA103G-E1 34-6393/FAX a103g a103g transistors transistor micro-x q6 Monolithic Transistor Pair UPA103G-E1	PDF
Untitled Abstract: No abstract text available Text: UPA1457H Transistors Darlington Transistor Array Number of Devices4 Type NPN/PNP V(BR)CEO (V)100 V(BR)CBO (V) I(C) Max. (A)5.0 P(D) Max. (W)28 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.0.5k	Original	UPA1457H	PDF
Untitled Abstract: No abstract text available Text: UPA1424H Transistors Common Emitter Transistor Array Number of Devices Type NPN/PNP V(BR)CEO (V)70 V(BR)CBO (V) I(C) Max. (A)2.0 P(D) Max. (W)3.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k	Original	UPA1424H	PDF
UPA102G Abstract: UPA102B Text: UPA102B UPA102G TRANSISTOR ARRAY FEATURES CONNECTION DIAGRAM Top View • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: (9 GHz Single Transistors) • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: UPA102B: Superior thermal dissipation due to studded	Original	UPA102B UPA102G UPA102B: 14-pin UPA102G: UPA102B/G 14-pin 24-Hour UPA102G UPA102B	PDF
D20-D21 Abstract: diode d21 MC68040 MC68040V MC68060 9 Vcc 12 GND Text: T TDO N/C GND CDIS IPL2 IPL1 IPL0 IPEND GND TDI TCK TMS MDIS* RSTI VCC GND GND* CIOUT VCC RSTO GND VCC GND BCLK VCC JS2* GND GND NC TCI AVEC SC0 BG TA PST0 PST3 BB BR S TBI SC1 TEA PST1 GND VCC GND LOCK R VCC GND PST2 TIP TS VCC LOCKE MI GND TLN0 Q UPA1 GND UPA0	Original	MC68040V MC68EC040V MC68040 MC68060 D20-D21 diode d21 9 Vcc 12 GND	PDF
Untitled Abstract: No abstract text available Text: UPA102G IL08 * HIGH FREQUENCY PNP TRANSISTOR ARRAY —TOP VIEW— 14 1 13 2 12 SUB 3 11 10 9 8 4 SUB 5 6 7	Original	UPA102G	PDF
TRANSISTOR C 2 SUB Abstract: UPA102G UPA102B Text: UPA102B UPA102G TRANSISTOR ARRAY FEATURES CONNECTION DIAGRAM Top View • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: (9 GHz Single Transistors) • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: UPA102B: Superior thermal dissipation due to studded	Original	UPA102B UPA102G UPA102B: 14-pin UPA102G: UPA102B/G 14-pin TRANSISTOR C 2 SUB UPA102G UPA102B	PDF
iei-1209 Abstract: uPA1438 transistor CD 910 IC351 IC-3517 IEI-1213 MEI-1202 MF-1134 Text: DATA SHEET SILICON TRANSISTOR ARRAY uPA1438 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The ¿¿PA1438 is NPN silicon epitaxial D arlington (in millimeters) Power Transistor A rray that built in Surge Absorber and	OCR Scan	PA1438 uPA1438 tPA1438H IEI-1209) iei-1209 transistor CD 910 IC351 IC-3517 IEI-1213 MEI-1202 MF-1134	PDF
nec transistor Abstract: No abstract text available Text: NEC TRANSISTOR ARRAY FEATURES_ • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 G H z Single Transistors • OUTSTANDING hFE LINEARITY UPA102G CONNECTION DIAGRAM (Top view ) UPA102G 14 • SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE	OCR Scan	UPA102G UPA102G hM27S25 UPA102G-E1 2500/REEL nec transistor	PDF
nec transistor Abstract: transistor and schematic symbols Text: NEC-TRANSISTOR ARRAY FEATURES UPA101G CONNECTION DIAGRAM BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: 9 GHz Single Transistors (Top view) UPA101G OUTSTANDING hFE LINEARITY SMALL PACKAGE _1 1_ 1- TAPE AND REEL PACKAGING OPTION	OCR Scan	UPA101G UPA101G b427525 UPA101G-E1 2500/REEL b4275B5 00b5fl04 nec transistor transistor and schematic symbols	PDF
Untitled Abstract: No abstract text available Text: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 8 5 6 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The ,uPA1856 is a switching device which can be driven directly by a 2.5 V power source.	OCR Scan	uPA1856 D13808EJ1V0DS00 PA1856 13808EJ1V 0DS00	PDF
NEC uPA101G Abstract: UPA101B UPA101G Text: NEC/ CALIFORNIA 5bE D NEC b4274m 00GSS7S ÖS3 * N E C C UPA101B UPA101G TRANSISTOR ARRAY FEATURES OUTLINE DIMENSIONS • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: 9 GHz Single Transistors (Units in mm) OUTLINE BS14 T0PVIEW <^° 8 • OUTSTANDING hFE LINEARITY	OCR Scan	b4274m G002575 UPA101B UPA101G UPA101B: 14-pin UPA101G: NEC uPA101G UPA101B UPA101G	PDF
d128 Abstract: PA1852 uPA1852 diode oa 90 Text: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 8 5 2 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The ,uPA1852 is a switching device which can be driven directly by a 2.5-V power source.	OCR Scan	uPA1852 D12803EJ1V0DS00 PA1852 d128 PA1852 diode oa 90	PDF
CI008 Abstract: No abstract text available Text: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTORS UPA1702 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE D E S C R IP T IO N P A C K A G E D IM E N S IO N S This pro d u ct is N-Channe> M OS Field Effect in: millimeter T ransistordesignedforD C /D C converters and power	OCR Scan	UPA1702 CI008	PDF

Untitled Abstract: No abstract text available Text: TRANSISTOR ARRAY FEATURES_ UPA103G CONNECTION DIAGRAM • FIVE MONOLITHIC 9 GHz fr TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers Top View UPA103G 14 13 12 11 10 9 8 • OUTSTANDING hFE LINEARITY	OCR Scan	UPA103G UPA103G UPA103G-E1 2500/REEL fci427525	PDF
PA1552 Abstract: PA1552BH YTYN astex wv471 UV 471 Text: ~ r — $ • v — ï^ H I C o m p o u n d Field Effect P o w e r T ran sisto r uPA1552B t '^ / N 0r7 - M O S FET 7 U ' f ^ 'y 3 ~ > ^7 ^ I l f f i AîPA1552BIÎ, N ^ - ^ J H Ê É S / ^ - M O S FET77 U -f ? * m Z ' f y ï X f & f e t f f è t lT 4b 'U , g -ilT 7?	OCR Scan	juPA1552B PA1552BÃ 04VIBIÃ PA1552BH G10599JJ2V0DS00 PA1552B PA1552 YTYN astex wv471 UV 471	PDF
pa1520 Abstract: No abstract text available Text: DATA SHEET Compound Field Effect Power Transistor UPA1520B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE D E S C R IP T IO N PACKAG E The /¿PA1520B is N-channel Power MOS FET A rray that built in 4 circuits designed for solenoid, motor and lamp D IM E N S IO N S	OCR Scan	UPA1520B PA1520B /iPA1520BH pa1520	PDF
ic 3361 Abstract: No abstract text available Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials. P1 98.2 DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR uPA1576 N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCR IPTIO N	OCR Scan	uPA1576 PA1576 JPA1576H ic 3361	PDF
PA1812 Abstract: uPA1812 UPA1812GR-9JG N354 Text: PRELIMINARY PRODUCT INFORMATION MOS Field Effect Transistor jjl PA1812 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The//PA1812 is a switching device which can be driven directly by a 4V power source. The uPA1812 features a low on-state resistance and excellent	OCR Scan	uPA1812 The//uPA1812 uuPA1812 PA1812 UPA1812GR-9JG N354	PDF
Untitled Abstract: No abstract text available Text: NEC TRANSISTOR ARRAY FEATURES_ • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 GHz Single Transistors • OUTSTANDING hFE CONNECTION DIAGRAM (Topview) UPA102G 14 LINEARITY • SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE	OCR Scan	UPA102G UPA102G OUTUNEG14 UPA102G-E1 2500/REEL	PDF
Silicon Bipolar Transistor Q6 Abstract: No abstract text available Text: NEC-TRANSISTOR ARRAY UPA101G CONNECTION DIAGRAM FEATURES Top View BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: UPA101B (9 GHz Single Transistors) 14 OUTSTANDING hFE LINEARITY 13 12 11 10 9 6 TWO PACKAGE OPTIONS: UPA101B: Superior thermal dissipation due to studded	OCR Scan	UPA101G UPA101B UPA101B: 14-pin UPA101G: UPA101B, UPA101G UPA101B UPA101Q Silicon Bipolar Transistor Q6	PDF
Untitled Abstract: No abstract text available Text: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 8 5 4 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The ,uPA1854 is a switching device which can be driven directly by a 2.5-V power source.	OCR Scan	uPA1854 D13295EJ1V0DS00 PA1854	PDF
Untitled Abstract: No abstract text available Text: DATA S H EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 9 0 0 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The ,uPA1900 is a switching device which can be driven directly by a 2.5 V power source.	OCR Scan	uPA1900 D13809EJ1V0DS00 PA1900	PDF
transistor CD 910 Abstract: IEI-1213 MEI-1202 MF-1134 uPA1426 darlington transistor for audio power application npn darlington array EL120 EM202 Text: SILICON TRANSISTOR ARRAY / P 1 A 4 2 6 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION The,uPA1426 is NPN silicon epitaxial Darlington Power Transistor PACKAGE DIMENSION (in m illim eters) A rray that built in 4 circu its designed for driving solenoid,	OCR Scan	uPA1426 PA1426H transistor CD 910 IEI-1213 MEI-1202 MF-1134 darlington transistor for audio power application npn darlington array EL120 EM202	PDF

UPA1 Search Results

UPA1 Result Highlights (5)

UPA1 Price and Stock

Nichicon Corporation UPA1E271MPD

Nichicon Corporation UPA1E102MPD

Nichicon Corporation UPA1A561MPD1TA

Nichicon Corporation UPA1A471MPD1TA

Nichicon Corporation UPA1A821MPD

UPA1 Datasheets (500)

UPA1 Datasheets Context Search

a103g

Untitled

Untitled

UPA102G

D20-D21

Untitled

TRANSISTOR C 2 SUB

iei-1209

nec transistor

nec transistor

Untitled

NEC uPA101G

d128

CI008

Untitled

PA1552

pa1520

ic 3361

PA1812

Untitled

Silicon Bipolar Transistor Q6

Untitled

Untitled

transistor CD 910