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    UPA DUAL TRANSISTOR Search Results

    UPA DUAL TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    UPA DUAL TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SR8800SMQ1950BY

    Abstract: colpitt oscillator design lc colpitt oscillator SR8800SMQ2000BY rohde UPA cascode transistor array VCO NEC uPA 1400 sr8800 Simulation of 3 phase common mode choke R68000
    Text: California Eastern Laboratories APPLICATION NOTE AN1034 Designing VCOs and Buffers Using the UPA family of Dual Transistors Abstract This application note will review the process by which VCO Voltage Controlled Oscillator designers choose their oscillator’s topology and devices based on performance requirement, real estate constraints and DC power consumption. Using a Personal Communication System (PCS) application as a practical example, this article will demonstrate a


    Original     		PDF AN1034 SR8800SMQ1950BY colpitt oscillator design lc colpitt oscillator SR8800SMQ2000BY rohde UPA cascode transistor array VCO NEC uPA 1400 sr8800 Simulation of 3 phase common mode choke R68000

    M68882

    Abstract: MC68060 MC68040 MC68060FPSP M68000 MC68EC060 MC68LC060 MC68060ISP DSA0039258
    Text: Porting software from an MC68040 to an MC68060 by Jeff Gokingco, Cliff Parrott, Robert Podnar 1.0 Credits This article was submitted to Electronic Design, and was published in August 1994. The article you are seeing here is a draft copy only, and that the final form of the article is the propery of Electronic Design.


    Original     		PDF MC68040 MC68060 MC68060 MC68040. MC68040-based M68882 MC68060FPSP M68000 MC68EC060 MC68LC060 MC68060ISP DSA0039258

    M68882

    Abstract: MC68040 MC68060 MC68LC060 M68000 MC68EC060
    Text: Freescale Semiconductor Porting software from an MC68040 to an MC68060 by Jeff Gokingco, Cliff Parrott, Robert Podnar 1.0 Credits Freescale Semiconductor, Inc. This article was submitted to Electronic Design, and was published in August 1994. The article you are seeing


    Original     		PDF MC68040 MC68060 MC68060 MC68040. M68882 MC68LC060 M68000 MC68EC060

    T2C211

    Abstract: MAXQ20 MAXQ7665 anisotropic magnetoresistive circuit Design C0M13 can baudrate prescaler maxim temp sensors analog design guide circuit diagram of full adder 512rc quantum dc drivers
    Text: Rev 0; 12/07 MAXQ7665/MAXQ7666 USER’S GUIDE V- MAGNET MAGNETIC FIELD DIRECTION M I R+ΔR I R-ΔR CAN 2.0B BUS S SHAFT I N ROTATION M M R-ΔR POWER MGMT 16-BIT TIMERS 3 V+ TEMP SENSOR UART (LIN 2.0) JTAG DIGITAL I/O CAN 2.0B 48-TQFN 7mm x 7m m -40°°C to


    Original     		PDF MAXQ7665/MAXQ7666 16-BIT 48-TQFN 16-BIT MAXQ20 AIN11 AIN13 AIN15 AIN10 AIN12 T2C211 MAXQ7665 anisotropic magnetoresistive circuit Design C0M13 can baudrate prescaler maxim temp sensors analog design guide circuit diagram of full adder 512rc quantum dc drivers

    HA17358 equivalent

    Abstract: M51977 IC ha17555 SG3524 application notes speed control Automatic Voltage Regulator Circuit transistor audio fp 1016 ha17555 ic SG3524 application notes in push pull HA17555FP MB3769
    Text: Hitachi Standard Linear ICs DATA BOOK ADE-404-002A 2nd Edition 09/98 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of


    Original     		PDF ADE-404-002A HA17901FP-EL HA17358 equivalent M51977 IC ha17555 SG3524 application notes speed control Automatic Voltage Regulator Circuit transistor audio fp 1016 ha17555 ic SG3524 application notes in push pull HA17555FP MB3769

    linear L 9113 smd

    Abstract: MAXQ7667 APE12 Motorola transistor smd marking codes ultrasonic generator 20khz A3D5 Ultrasonic distance smd transistor marking sp1 MAXQ10 ultrasonic movement DETECTOR with alarm
    Text: Rev 0; 4/09 MAXQ7667 USER’S GUIDE BURST ENABLE BURST BURST OUTPUT, DUTY CYCLE, AND PULSE COUNTER 0.47µF 0.47µF REFBG REFSAR 0.47µF REFECHO AIN0 AIN1 AVDD AIN2 AIN3 THERMISTOR AIN4 AIN5 VOLTAGE REFERENCE SIGMA-DELTA ADC -1 2mV 0mV AVDD/2 MUX 120kΩ BATTERY+


    Original     		PDF MAXQ7667 470pF 16-BIT 16-MIPS BSP129 330pF linear L 9113 smd APE12 Motorola transistor smd marking codes ultrasonic generator 20khz A3D5 Ultrasonic distance smd transistor marking sp1 MAXQ10 ultrasonic movement DETECTOR with alarm

    Transistor Equivalent list po55

    Abstract: 1F15H transistor P6n motorola top mark smd 7h MAXQ2000 MAXQ622
    Text: Rev 1; 7/10 MAXQ612/MAXQ622 USER’S GUIDE MAXQ612/MAXQ622 REGULATOR VOLTAGE MONITOR GPIO USB SIE* TXCVR 16-BIT MAXQ RISC CPU 6KB ROM SECURE MMU CLOCK 128KB FLASH WATCHDOG 6KB SRAM 2x 16-BIT TIMER 8kHz NANO RING IR DRIVER IR TIMER 2x SPI 2x USART I2C *MAXQ622 ONLY.


    Original     		PDF MAXQ612/MAXQ622 MAXQ612/MAXQ622 16-BIT 128KB MAXQ622 Transistor Equivalent list po55 1F15H transistor P6n motorola top mark smd 7h MAXQ2000

    gunn diode ghz s-parameter

    Abstract: impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO
    Text: California Eastern Laboratories APPLICATION NOTE AN1035 Design Considerations for a Ku-Band DRO in Digital Communication Systems ABSTRACT the parts for the DRO and mechanical assembly will be presented. While the design proposed might not yield the optimum design solution for all DBS applications, it does introduce a few important DRO design techniques that can be applied to other high frequency communication systems.


    Original     		PDF AN1035 p-7065. AN1023, gunn diode ghz s-parameter impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO

    block diagram of wifi enabled robo

    Abstract: powerline ethernet adapter schematic diagram ADSL2 DSLAM chipset VSC7385 EEMB GL850A mpc dhrystone ADSL2 Modem circuit diagram GL850 MPC8313E-rdb
    Text: PowerQUICC Integrated Communications Processors freescale.com/powerarchitecture Table of Contents MPC8572E PowerQUICC III Processor MPC8568E PowerQUICC III Processor MPC8560E PowerQUICC III Processor MPC8555E PowerQUICC III Processor MPC8548E PowerQUICC III Processor


    Original     		PDF MPC8572E MPC8568E MPC8560E MPC8555E MPC8548E MPC8541E MPC8540 MPC8360E MPC8349E MPC8323E block diagram of wifi enabled robo powerline ethernet adapter schematic diagram ADSL2 DSLAM chipset VSC7385 EEMB GL850A mpc dhrystone ADSL2 Modem circuit diagram GL850 MPC8313E-rdb

    MAX2990

    Abstract: transistor SMD P2F transistor a015 SMD smd A1015 A1015 smd transistor SMD P1f MAX2991 a1215 smd transistor transistor A1515 A1015 smd type
    Text: MAX2990 INTEGRATED POWER-LINE DIGITAL TRANSCEIVER PROGRAMMING MANUAL Maxim Integrated Products -1- MAX2990 Programming Manual Rev 1.4 TABLE OF CONTENTS MAX2990 Functional Description . 4


    Original     		PDF MAX2990 crc16 crc32 UINT16 transistor SMD P2F transistor a015 SMD smd A1015 A1015 smd transistor SMD P1f MAX2991 a1215 smd transistor transistor A1515 A1015 smd type

    Untitled

    Abstract: No abstract text available
    Text: October 1997 FAIRCHILD M lC O N D U C T O R FDC6320C Dual N & P Channel, Digital FET General Description Features T h e s e dual N & P C hannel logic level en hancem ent m ode field e ffe c tra nsistors are produced using Fairchild's proprietary, high cell density, D M O S technology. This v e ry high de nsity


    OCR Scan     		PDF FDC6320C

    Untitled

    Abstract: No abstract text available
    Text: f f H A R R IS U U S E M I C O N D U C T O R CD40107BMS CMOS Dual 2 Input NAND Buffer /Driver December 1992 Pinouts Features CD40107BF TOP VIEW • High Voltag» Type 20V Rating) • 32 Times Standard B Series Output Current Drive Sinking Capability - 136mA Typ. at VDD = 10V


    OCR Scan     		PDF CD40107BMS CD40107BF 136mA 100nA 10kfl 245-I 500pF, 500pF CD40107BMS

    Untitled

    Abstract: No abstract text available
    Text: s a _ F U IIT S U DATASHEET * MB8287-25/-35 CMOS 288K-BIT HIGH-SPEED SRAM 32K Words x 8 Bits Static Random Access Memory with Automatic Power Down The Fujitsu MB8287 is a 32,768 words x 8 bits static random access memory with


    OCR Scan     		PDF MB8287-25/-35 288K-BIT MB8287 MB8287-25 MB8287-35 32-LEAD DIP-32P-M02) FPT-32P-M02)

    si1250

    Abstract: No abstract text available
    Text: m is ,! HM-65642/883 8K x 8 Asynchronous CMOS StStÌC RAM January 1992 Features Description • This Circuit Is Processed In Accordance to Mll-Std883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65642/883 is a CMOS 8192 x 8-bit Static Random


    OCR Scan     		PDF HM-65642/883 HM-65642/883 80C86 80C88 MIL-M38510 MIL-STD-1835, GDIP1-T28 si1250

    UD1001

    Abstract: FT4017 transistor A431 MA3232 CA3036 UC850 DM01B DM02B UC340 L0NA
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V UD1001 FT4017 transistor A431 MA3232 CA3036 UC850 DM01B DM02B UC340 L0NA

    CD4013

    Abstract: F3302 harris CD4013B
    Text: f f l U U H A R R CD4027BMS I S S E M I C O N D U C T O R CMOS Dual J-K Master-Slave Flip-Flop Decem ber 1992 Pinout Features C04027BMS TOP VIEW • H ig h V o lta g e T y p e 20V R a tin g • Set - Reset Capability • Static Flip-Flop Operation - Retains State Indefinitely


    OCR Scan     		PDF CD4027BMS C04027BMS 16MHz 100nA CD4013 F3302 harris CD4013B

    transistor k1502

    Abstract: dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V transistor k1502 dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029

    A1381 transistor

    Abstract: 2N5036 CA3036 NF Amp NPN Silicon transistor TO-3 MA3232 20C26 2N5034 package 2N5035 L29a 2N5034
    Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GE RMANIUM P N P 1 9 G ER M AN IU M N P N 1 10. SILICON PN P 1 1 . SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V A1381 transistor 2N5036 CA3036 NF Amp NPN Silicon transistor TO-3 MA3232 20C26 2N5034 package 2N5035 L29a 2N5034

    ad548t

    Abstract: No abstract text available
    Text: A N A LO G D EV IC E S FEATURES Enhanced Replacement for LF441 and TL061 DC Performance: 200|iA max Quiescent Current lOpA max Bias Current, Warmed Up AD548C 250|jlV max Offset Voltage (AD548C) 2jiV/°C max Drift (AD548C) 2|iV p-p Noise, 0.1 to 10Hz AC Performance:


    OCR Scan     		PDF LF441 TL061 AD548C) EIA-481A MIL-STD-883B AD648 AD548 300pA ad548t

    2sa525

    Abstract: CA3036 2n1613 replacement CK727 D16P4 NS6205
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF

    NS1000 n

    Abstract: CA3036 BVCEO-90V 2CY38 transistor A431 2n1613 replacement A431 UD1001 NS1862 QD401-78
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 NS1000 n CA3036 BVCEO-90V 2CY38 transistor A431 2n1613 replacement A431 UD1001 NS1862 QD401-78

    MA3232

    Abstract: BF123 CA3036 FT4017 2n1613 replacement A431 BF121 BVEBO-15V DIODE SJ 98 DM01B
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF BVCBO-100V BVCE0-80V BVEBO-15V BVCBO-60V BVCEO-40V BVCB0-80V BVCE0-60V BVCB0-100V MA3232 BF123 CA3036 FT4017 2n1613 replacement A431 BF121 DIODE SJ 98 DM01B

    transistor a640

    Abstract: transistor A608 2SC632 transistor 2sC632 2SC634 L14B Pt-100W CA3036 DM02B FV918
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 transistor a640 transistor A608 2SC632 transistor 2sC632 2SC634 L14B Pt-100W CA3036 DM02B FV918

    DIODE SJ 98

    Abstract: CA3036 silicon epitaxial mesa diode microwave switch V405T DARLINGTON 3A 100V npn array 2n1613 replacement A431 MT726 MT869 MT995
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 DIODE SJ 98 CA3036 silicon epitaxial mesa diode microwave switch V405T DARLINGTON 3A 100V npn array 2n1613 replacement A431 MT726 MT869 MT995