UN1113
Abstract: UNR1113 XN01113 XN1113
Text: Composite Transistors XN01113 XN1113 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1113(UN1113) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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XN01113
XN1113)
UNR1113
UN1113)
UN1113
XN01113
XN1113
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UN1113
Abstract: UNR1113 XP04113 XP4113
Text: Composite Transistors XP04113 XP4113 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1113(UN1113) x 2 elements • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage
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XP04113
XP4113)
UNR1113
UN1113)
UN1113
XP04113
XP4113
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XP01113
Abstract: XP1113 UN1113 UNR1113
Text: Composite Transistors XP01113 XP1113 Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1113(UN1113) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element
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XP01113
XP1113)
UNR1113
UN1113)
XP01113
XP1113
UN1113
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UN1113
Abstract: UNR1113 XP06113 XP6113
Text: Composite Transistors XP06113 XP6113 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UNR1113(UN1113) x 2 elements • Absolute Maximum Ratings 0 to 0.1 ● 0.12 –0.02 ■ Basic Part Number of Element 0.7±0.1
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XP06113
XP6113)
UNR1113
UN1113)
UN1113
XP06113
XP6113
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XN4313
Abstract: No abstract text available
Text: Composite Transistors XN04313 XN4313 Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 0.50+0.10 –0.05 • UNR1213 (UN1213) + UNR1113 (UN1113) Tr1 1.1+0.2
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XN04313
XN4313)
UNR1213
UN1213)
UNR1113
UN1113)
SC-74
XN4313
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UNR1113
Abstract: UP01113
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP01113 Silicon PNP epitaxial planar type Unit: mm +0.05 (0.30) 4 1 1.00±0.05 1.60±0.05 0 to 0.02 • UNR1113 x 2 • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open)
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2002/95/EC)
UP01113
UNR1113
UNR1113
UP01113
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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Untitled
Abstract: No abstract text available
Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts
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UNR111x
UN111x
UNR1110
UNR1111
UNR1112
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XP04313 XP04313 Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) 0.2±0.05 5 0.12+0.05 –0.02 4 1.25±0.10 2.1±0.1 • Features 5˚ • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half
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XP04313
XP04313)
UNR1213
UN1213)
UNR1113
UN1113)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP01113G Silicon PNP epitaxial planar type For digital circuits • Features ■ Package • Two elements incorporated into one package (Transistors with built-in resistor)
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2002/95/EC)
UP01113G
UNR1113
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UP01113
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP01113 Silicon PNP epitaxial planar type Unit: mm +0.05 (0.30) 4 2 3 (0.50) (0.50) M Di ain sc te on na tin nc ue e/ d 1 • Two elements incorporated into one package (Transistors with built-in resistor)
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2002/95/EC)
UP01113
UP01113
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XN4313
Abstract: UN1113 UN1213 UNR1113 UNR1213 XN04313
Text: Composite Transistors XN04313 XN4313 Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d For switching/digital circuit 5 6 3 2 • Basic Part Number of Element
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XN04313
XN4313)
UNR1213
UN1213)
UNR1113
UN1113)
SC-74
XN4313
UN1113
UN1213
UNR1113
UNR1213
XN04313
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UNR1110
Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ
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UNR111x
UN111x
UN1110)
UN1111)
UN1112)
UN1113)
UN1114)
UN1115)
UN1116)
UN1117)
UNR1110
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
UNR1119
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UN1113
Abstract: UNR1113 XN04113 XN4113
Text: Composite Transistors XN04113 XN4113 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings +0.1 +0.1 0 to 0.05 0.4±0.2 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage
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XN04113
XN4113)
UN1113
UNR1113
XN04113
XN4113
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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UNR1113
Abstract: UP01113
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP01113 Silicon PNP epitaxial planar type Unit: mm +0.05 (0.30) 4 (0.20) 5˚ 1.20±0.05 For digital circuits 1.60±0.05 5 0.10±0.02 0.20 –0.02 1.00±0.05 1.60±0.05 Display at No.1 lead
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2002/95/EC)
UP01113
UNR1113
UNR1113
UP01113
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XN04313 XN4313 Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Features 5 6 3 2 0.30+0.10 –0.05 ■ Basic Part Number of Element 0.50+0.10
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XN04313
XN4313)
UNR1213
UN1213)
UNR1113
UN1113)
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UNR1113
Abstract: UP01113G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP01113G Silicon PNP epitaxial planar type For digital circuits • Package • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half
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2002/95/EC)
UP01113G
UNR1113
UNR1113
UP01113G
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UN1113
Abstract: UNR1113 XP04113 XP4113
Text: Composite Transistors XP04113 XP4113 Silicon PNP epitaxial planer transistor 0.2±0.05 5 6 ● 0.12+0.05 –0.02 4 5° Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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XP04113
XP4113)
UNR1113
UN1113)
UN1113
XP04113
XP4113
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UN1113
Abstract: UNR1113 XP06113 XP6113
Text: Composite Transistors XP06113 XP6113 Silicon PNP epitaxial planer transistor 0.2±0.05 5 6 ● 4 Features 0.2±0.1 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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XP06113
XP6113)
UNR1113
UN1113)
UN1113
XP06113
XP6113
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UN1113
Abstract: UNR1113 XN01113 XN1113
Text: Composite Transistors XN01113 XN1113 Silicon PNP epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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XN01113
XN1113)
UNR1113
UN1113)
UN1113
XN01113
XN1113
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XN04313 XN4313 Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d 3 6 2 (0.65) 0.30+0.10 –0.05 0.50+0.10
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XN04313
XN4313)
UNR1213
UN1213)
UNR1113
UN1113)
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UNR1113
Abstract: UP01113G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP01113G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package • Two elements incorporated into one package (Transistors with built-in resistor)
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2002/95/EC)
UP01113G
UNR1113
UNR1113
UP01113G
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common collector PNP
Abstract: UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118
Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits (1.0) 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ
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UNR111x
UN111x
UN1110)
UN1111)
UN1112)
UN1113)
UN1114)
UN1115)
UN1116)
UN1117)
common collector PNP
UNR1110
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
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