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    UNITED MONOLITHIC SEMICONDUCTORS EUROPEAN Search Results

    UNITED MONOLITHIC SEMICONDUCTORS EUROPEAN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    UNITED MONOLITHIC SEMICONDUCTORS EUROPEAN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ulm 2003

    Abstract: 77GHz Radar sas smd transistor PPH15 PPH25X 5gHz SMD RF Mixer SMD Transistor SAs diode catalogue pph15 transistor ulm 2002
    Text: ABOUT US United Monolithic Semiconductors UMS was created in 1996 to provide a European source of III-V technologies and products. The Company has industrial facilities in Germany, USA and France (Headquarters). Your Leading Source for Products, Support & Services


    Original     		PDF

    77GHz Radar

    Abstract: PPH25x ulm 2003 ph15 transistor pph15 transistor HB20M 24GHz Radar military switch PPH25 thales SMD
    Text: UMS MMIC Solutions up to 100GHz The European Source for Products, Solutions and Foundry Services ABOUT US United Monolithic Semiconductors* UMS was created in 1996 to provide a European source of III-V technologies and products. The Company has industrial facilities in Ulm, Germany and Orsay,


    Original     		PDF 100GHz 77GHz Radar PPH25x ulm 2003 ph15 transistor pph15 transistor HB20M 24GHz Radar military switch PPH25 thales SMD

    SAA4981

    Abstract: SAA4981T SO24 TDA4650 GU10 dimensions tda2579
    Text: INTEGRATED CIRCUITS DATA SHEET SAA4981 Monolithic integrated 16 : 9 compressor Preliminary specification Supersedes data of May 1994 File under Integrated Circuits, IC02 1995 Oct 05 Philips Semiconductors Preliminary specification Monolithic integrated 16 : 9 compressor


    Original     		PDF SAA4981 SCD44 533061/1500/02/pp20 SAA4981 SAA4981T SO24 TDA4650 GU10 dimensions tda2579

    tda2579

    Abstract: TDA2579B SAA4981 SAA4981T SO24 TDA4650 tda4665
    Text: INTEGRATED CIRCUITS DATA SHEET SAA4981 Monolithic integrated 16 : 9 compressor Preliminary specification Supersedes data of May 1994 File under Integrated Circuits, IC02 1995 Oct 05 Philips Semiconductors Preliminary specification Monolithic integrated 16 : 9 compressor


    Original     		PDF SAA4981 SCD44 533061/1500/02/pp20 tda2579 TDA2579B SAA4981 SAA4981T SO24 TDA4650 tda4665

    Transient Voltage Suppressor diode application no

    Abstract: rz 7888
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D184 BZA109 9-fold ESD transient voltage suppressor Product specification Supersedes data of 1997 Oct 27 File under Discrete Semiconductors, SC01 1997 Dec 01 Philips Semiconductors Product specification


    Original     		PDF M3D184 BZA109 IEC1000-4-2 OT163-1 13-Feb-03) Transient Voltage Suppressor diode application no rz 7888

    BZA408B

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 BZA408B Quadruple Bidirectional ESD transient suppressor Preliminary specification File under Discrete Semiconductors, SC01 1998 Jun 05 Philips Semiconductors Preliminary specification Quadruple Bidirectional ESD transient suppressor


    Original     		PDF M3D302 BZA408B IEC1000-4-2 OT457 SCA60 115104/00/01/pp8

    BZA462A

    Abstract: IEC1000-4-2 SOT-457
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 BZA462A Quadruple ESD transient voltage suppressor Product specification Supersedes data of 1998 Oct 30 1999 May 25 Philips Semiconductors Product specification Quadruple ESD transient voltage suppressor


    Original     		PDF M3D302 BZA462A IEC1000-4-2 OT457 115002/00/03/pp12 BZA462A IEC1000-4-2 SOT-457

    BZA420A

    Abstract: MDA200 IEC1000-4-2
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 BZA420A Quadruple ESD transient voltage suppressor Product specification Supersedes data of 1998 Oct 30 1999 May 20 Philips Semiconductors Product specification Quadruple ESD transient voltage suppressor


    Original     		PDF M3D302 BZA420A IEC1000-4-2 OT457 115002/00/03/pp12 BZA420A MDA200 IEC1000-4-2

    BZA456A

    Abstract: rz 7888 IEC1000-4-2
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 BZA456A Quadruple ESD transient voltage suppressor Product specification Supersedes data of 1998 Oct 30 1999 May 25 Philips Semiconductors Product specification Quadruple ESD transient voltage suppressor


    Original     		PDF M3D302 BZA456A IEC1000-4-2 OT457 115002/00/03/pp12 BZA456A rz 7888 IEC1000-4-2

    marking code z0

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 BZA420A Quadruple ESD transient voltage suppressor Product specification Supersedes data of 1997 Dec 09 1998 Oct 30 Philips Semiconductors Product specification Quadruple ESD transient voltage suppressor


    Original     		PDF M3D302 BZA420A IEC1000-4-2 OT457 MAM357 BZA420A SCA60 135106/00/02/pp12 marking code z0

    BZA408B

    Abstract: mgr560 rz 7888 IEC1000-4-2 suppressor diode 17 ca
    Text: DATA SHEET book, halfpage M3D302 BZA408B Quadruple bidirectional ESD transient voltage suppressor Product specification Supersedes data of 1998 Jun 05 1998 Oct 15 Philips Semiconductors Product specification Quadruple bidirectional ESD transient voltage suppressor


    Original     		PDF M3D302 BZA408B IEC1000-4-2 OT457 SCA60 115104/00/02/pp12 BZA408B mgr560 rz 7888 IEC1000-4-2 suppressor diode 17 ca

    BZA109TS

    Abstract: philips datasheet surface mount zener diode IEC1000-4-2 SO20 SSOP20 SOT339-1 MO-150-AE
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D370 BZA109TS 9-fold ESD Transient Suppressor Preliminary specification File under Discrete Semiconductors, SC01 1997 Sep 08 Philips Semiconductors Preliminary specification 9-fold ESD Transient Suppressor BZA109TS FEATURES


    Original     		PDF M3D370 BZA109TS IEC1000-4-2 OT339-1 OT339 SCA55 117027/00/01/pp12 BZA109TS philips datasheet surface mount zener diode IEC1000-4-2 SO20 SSOP20 SOT339-1 MO-150-AE

    BZA456A

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 BZA456A Quadruple ESD transient voltage suppressor Product specification Supersedes data of 1997 Dec 08 1998 Oct 30 Philips Semiconductors Product specification Quadruple ESD transient voltage suppressor


    Original     		PDF M3D302 BZA456A IEC1000-4-2 OT457 MAM357 BZA456A SCA60 135106/00/02/pp12

    MARKING CODE z1

    Abstract: BZA820A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD127 BZA800A-series Quadruple ESD transient voltage suppressor Preliminary specification 1999 Nov 15 Philips Semiconductors Preliminary specification Quadruple ESD transient voltage suppressor BZA800A-series


    Original     		PDF MBD127 BZA800A-series IEC1000-4-2 OT353 SC-88A) BZA800A-series SC-88A 115002/00/03/pp10 MARKING CODE z1 BZA820A

    Philips LQFP MARKING CODE

    Abstract: Philips LQFP PART MARKING CODE Philips lqfp date CODE MARKING
    Text: INTEGRATED CIRCUITS DATA SHEET CGY2013G GSM 4 W power amplifier Preliminary specification Supersedes data of 1996 Jul 12 File under Integrated Circuits, IC17 1998 Jan 23 Philips Semiconductors Preliminary specification GSM 4 W power amplifier CGY2013G FEATURES


    Original     		PDF CGY2013G PCF5077 SA1620. CGY2013GBE OT313 Philips LQFP MARKING CODE Philips LQFP PART MARKING CODE Philips lqfp date CODE MARKING

    BZA800A

    Abstract: BZA820A BZA856A BZA862A BZA868A IEC1000-4-2 MGT585 U 821 B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD127 BZA800A-series Quadruple ESD transient voltage suppressor Product specification Supersedes data of 2000 May 01 2000 Sep 25 Philips Semiconductors Product specification Quadruple ESD transient voltage suppressor


    Original     		PDF MBD127 BZA800A-series IEC1000-4-2 OT353 SC-88A) 613514/03/pp12 BZA800A BZA820A BZA856A BZA862A BZA868A IEC1000-4-2 MGT585 U 821 B

    za sot353

    Abstract: transient suppressor BZA820A BZA800A BZA856A BZA862A BZA868A IEC1000-4-2 68A sot353 marking za sc-88A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD127 BZA800A-series Quadruple ESD transient voltage suppressor Preliminary specification 2000 Apr 18 Philips Semiconductors Preliminary specification Quadruple ESD transient voltage suppressor BZA800A-series


    Original     		PDF MBD127 BZA800A-series IEC1000-4-2 OT353 SC-88A) 115002/00/03/pp10 za sot353 transient suppressor BZA820A BZA800A BZA856A BZA862A BZA868A IEC1000-4-2 68A sot353 marking za sc-88A

    za109ts

    Abstract: za109 "Transient Voltage Suppressor" SSOP20 package BZA109TS IEC1000-4-2 SSOP20 SCA-6
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D370 BZA109TS 9-fold ESD transient voltage suppressor Product specification Supersedes data of 1997 Dec 11 1998 Nov 26 Philips Semiconductors Product specification 9-fold ESD transient voltage suppressor BZA109TS FEATURES


    Original     		PDF M3D370 BZA109TS IEC1000-4-2 SSOP20; OT339-1 OT339-1 SCA60 135106/00/03/pp12 za109ts za109 "Transient Voltage Suppressor" SSOP20 package BZA109TS IEC1000-4-2 SSOP20 SCA-6

    BZA109

    Abstract: IEC1000-4-2 SO20 rz 7888
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D184 BZA109 9-fold ESD transient voltage suppressor Product specification Supersedes data of 1997 Oct 27 File under Discrete Semiconductors, SC01 1997 Dec 01 Philips Semiconductors Product specification


    Original     		PDF M3D184 BZA109 IEC1000-4-2 OT163-1 OT163-1 SCA56 117027/00/03/pp12 BZA109 IEC1000-4-2 SO20 rz 7888

    X-band antenna

    Abstract: x-band power transistor x band power amplifiers
    Text: Advance Information X-band Medium Power Amplifier GaAs Monolithic Microwave IC Vg1 Vd1 Vg2 Vd2 IN OUT UMS develops a monolithic two stage GaAs medium amplifier designed for X band applications, covering 8.5 to 11.5GHz. The 23dB gain and the high saturated output


    Original     		PDF 28dBm V/170mA. AI1004 AI10040179 ES-CHA5115-99F X-band antenna x-band power transistor x band power amplifiers

    AN0017

    Abstract: 44GHz da rf 910GM
    Text: Advanced Information Die & QFN packaged 44GHz Up-Converter GaAs Monolithic Microwave IC DA AT GM IF RF out IF GA X4 4 GX DX G3 LO in UMS is developing a 40-44GHz monolithic Up-Converter multifunction, integrating a time’s 4 multiplier included in the local oscillator path and, on the transmit path, a


    Original     		PDF 44GHz 40-44GHz V/250mA. AN0019 AN0020 ES-CHU2299-99F AI09060048 AN0017 da rf 910GM

    HB28D064MM2

    Abstract: HB28B128MM2 HB28D032MM2 HB28E016MM2 HB28XXXXMM2 Hitachi DSA0066
    Text: HB28XXXXMM2 MultiMediaCard Product Features Device Specifiction MultiMediaCards are extremely small and lightweight Flash cards suitable for use in multimedia products such as cellular phones and portable audio players. Hitachi MultiMediaCard integrates an AND type Flash memory and


    Original     		PDF HB28XXXXMM2 HB28E016MM2 128Mbit HB28D032MM2 HB28D064MM2 256Mbit 0-022A HB28D064MM2 HB28B128MM2 HB28XXXXMM2 Hitachi DSA0066

    transistor D 1710

    Abstract: TRANSISTOR D 1785 BGY212A pn1999 BGY21
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D373 BGY212A UHF amplifier module Preliminary specification 1999 Aug 23 Philips Semiconductors Preliminary specification UHF amplifier module BGY212A PINNING - SOT482C FEATURES • 3.5 V nominal supply voltage


    Original     		PDF M3D373 BGY212A OT482C BGY212A OT482C cove825 budgetnum/printrun/ed/pp11 transistor D 1710 TRANSISTOR D 1785 pn1999 BGY21

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BZA420A Quadruple ESD transient voltage suppressor Product specification Supersedes data of 1998 Oct 30 Philips Semiconductors 1999 May 20 PHILIPS PHILIPS Philips Semiconductors Product specification Quadruple ESD transient voltage suppressor


    OCR Scan     		PDF BZA420A OT457 SCA64 5002/00/03/pp1