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    UNIT JUNCTION TRANSISTOR Search Results

    UNIT JUNCTION TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    UNIT JUNCTION TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK4059TK

    Abstract: No abstract text available
    Text: 2SK4059TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TK For ECM Unit: mm Rating Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Junction Temperature Tj 125 °C Tstg −55~125 °C Storage temperature range


    Original     		PDF 2SK4059TK 2SK4059TK

    Untitled

    Abstract: No abstract text available
    Text: 2SK3857TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TK For ECM Unit: mm Application for Ultra-compact ECM Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Junction Temperature


    Original     		PDF 2SK3857TK 100mV

    2SK3857TK

    Abstract: No abstract text available
    Text: 2SK3857TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TK For ECM Unit: mm Rating Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Junction Temperature Storage temperature range


    Original     		PDF 2SK3857TK 2SK3857TK

    CG transistor

    Abstract: No abstract text available
    Text: 2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM Unit: mm Application for Ultra-compact ECM Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Junction Temperature


    Original     		PDF 2SK3582TK 100mV CG transistor

    2SK3857TK

    Abstract: No abstract text available
    Text: 2SK3857TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TK For ECM Unit: mm Application for Ultra-compact ECM Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Junction Temperature


    Original     		PDF 2SK3857TK 2SK3857TK

    2SK3376TV

    Abstract: No abstract text available
    Text: 2SK3376TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376TV For ECM Unit: mm 0.8±0.1 0.4 0.3±0.05 3 Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Junction Temperature Tj 125 °C Tstg −55~125


    Original     		PDF 2SK3376TV 2SK3376TV

    2SK3582TK

    Abstract: maximum idss transistor 290A transistor transistor marking CG
    Text: 2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM Unit: mm Rating Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Junction Temperature Tj 125 °C Tstg −55~125 °C Storage temperature range


    Original     		PDF 2SK3582TK 2SK3582TK maximum idss transistor 290A transistor transistor marking CG

    2SK3376TK

    Abstract: CG transistor 2SK3376
    Text: 2SK3376TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376TK For ECM Unit: mm Rating Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Junction Temperature Tj 125 °C Tstg −55~125 °C Storage temperature range


    Original     		PDF 2SK3376TK 2SK3376TK CG transistor 2SK3376

    2SK3857TV

    Abstract: No abstract text available
    Text: 2SK3857TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TV For ECM Unit: mm 0.8±0.1 0.4 0.3±0.05 3 Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Junction Temperature Tj 125 °C Tstg −55~125


    Original     		PDF 2SK3857TV 2SK3857TV

    2SK3582TK

    Abstract: No abstract text available
    Text: 2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM Unit: mm Application for Ultra-compact ECM Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Junction Temperature


    Original     		PDF 2SK3582TK 2SK3582TK

    K 1358 fet transistor

    Abstract: NE334S01 nec 2761 s11 diode shottky C10535E NE334S01-T1 NE334S01-T1B
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    Original     		PDF NE334S01 NE334S01 NE334S01-T1 NE334S01-T1B K 1358 fet transistor nec 2761 s11 diode shottky C10535E NE334S01-T1 NE334S01-T1B

    transistor NEC D 822 P

    Abstract: NEC D 822 P C10535E NE434S01 NE434S01-T1 NE434S01-T1B
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    Original     		PDF NE434S01 NE434S01 NE434S01-T1B transistor NEC D 822 P NEC D 822 P C10535E NE434S01-T1 NE434S01-T1B

    D2394

    Abstract: transistor d1071 d1071 transistor transistor d774 transistor NEC D 882 p transistor D798 D774 transistor D1547 TRANSISTOR d1677 TRANSISTOR D405
    Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm hetero junction to create high mobility electrons.


    Original     		PDF NE24283B NE24283B D2394 transistor d1071 d1071 transistor transistor d774 transistor NEC D 882 p transistor D798 D774 transistor D1547 TRANSISTOR d1677 TRANSISTOR D405

    transistor D227

    Abstract: nec D227 transistor k 4212 fet D3052 NE23383B transistor d115 NEC D74 transistor d145 transistor D95 D1542
    Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE23383B L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE23383B is a Herero Junction FET that utilizes the Unit : mm hetero junction to create high mobility electrons.


    Original     		PDF NE23383B NE23383B transistor D227 nec D227 transistor k 4212 fet D3052 transistor d115 NEC D74 transistor d145 transistor D95 D1542

    nec k 813

    Abstract: s11 diode shottky IEI1207 NE33284A NE33284A-SL NE33284A-T1 NE33284A-T1A NE33284AS
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE33284A L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    Original     		PDF NE33284A NE33284A NE33284A-SL NE33284A-T1 NE33284A-T1A nec k 813 s11 diode shottky IEI1207 NE33284A-SL NE33284A-T1 NE33284A-T1A NE33284AS

    NE42484C

    Abstract: 2608 surface mount transistor NE42484C-T1 Ga FET marking k C band FET transistor s-parameters L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking C 1S1220 THE TRANSISTOR MANUAL (JAPANESE) 1993 nec gaas fet marking
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    Original     		PDF NE42484C NE42484C NE42484C-SL 2608 surface mount transistor NE42484C-T1 Ga FET marking k C band FET transistor s-parameters L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking C 1S1220 THE TRANSISTOR MANUAL (JAPANESE) 1993 nec gaas fet marking

    D2504 transistor

    Abstract: d636 transistor transistor D450 transistor d525 d1944 d1405 transistor transistor d412 transistor D454 NF 817 NE329S01
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high mobility electrons. Its excellent low


    Original     		PDF NE329S01 NE329S01 NE329S01-T1 D2504 transistor d636 transistor transistor D450 transistor d525 d1944 d1405 transistor transistor d412 transistor D454 NF 817

    NE334S01

    Abstract: transistor C 2240 K 1358 fet transistor
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.


    OCR Scan     		PDF NE334S01 NE334S01 NE334S01-T1 NE334S01-T1B IR30-00 transistor C 2240 K 1358 fet transistor

    NE334501

    Abstract: transistor k 2761 NEC D 822 P NEC Ga FET marking C nec gaas fet marking NEC Ga FET marking A ap 2761 l transistor NE334S01 low noise FET NEC U
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.


    OCR Scan     		PDF NE334S01 NE334S01 NE334501 transistor k 2761 NEC D 822 P NEC Ga FET marking C nec gaas fet marking NEC Ga FET marking A ap 2761 l transistor low noise FET NEC U

    TRANSISTOR K 2191

    Abstract: nec 2761
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm


    OCR Scan     		PDF NE434S01 NE434S01 NE434S01-T1 NE434S01-T1B IR30-00 TRANSISTOR K 2191 nec 2761

    NEC k 2134 transistor

    Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. PACKAGE DIMENSIONS Unit: mm


    OCR Scan     		PDF NE32584C NE32584C NE32584C-T1A NE32584C-SL NE32584C-T1 NEC k 2134 transistor k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584

    NEC Ga FET marking L

    Abstract: U/25/20/TN26/15/850/NE32984D
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm


    OCR Scan     		PDF NE32984D NE32984D NE32984D-SL NE32984Dr NEC Ga FET marking L U/25/20/TN26/15/850/NE32984D

    NEC 2705 L 107

    Abstract: IC LA 4127 NEC Ga FET marking L NEC 2705 NEC 3552 L to Ku BAND LOW NOISE AMPLIFIER low noise FET NEC U NEC Ga FET marking V NEC Ga FET "marking V" NEC Ga FET
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The N E32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    OCR Scan     		PDF NE32484A E32484A NEC 2705 L 107 IC LA 4127 NEC Ga FET marking L NEC 2705 NEC 3552 L to Ku BAND LOW NOISE AMPLIFIER low noise FET NEC U NEC Ga FET marking V NEC Ga FET "marking V" NEC Ga FET

    NE42484C

    Abstract: transistor NEC D 586 NEC Ga FET marking L NE42484C-T1 28609 low noise FET NEC U ne42484 nec gaas fet marking NEC 2533 NEC Ga FET
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    OCR Scan     		PDF NE42484C NE42484C 42484C E42484C-SL NE42484C-T1 transistor NEC D 586 NEC Ga FET marking L NE42484C-T1 28609 low noise FET NEC U ne42484 nec gaas fet marking NEC 2533 NEC Ga FET