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    UNI JUNCTION TRANSISTOR Search Results

    UNI JUNCTION TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    UNI JUNCTION TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: WILLAS General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM120-M+ THRU MMBT3906TT1 FM1200-M+ Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


    Original     		PDF OD-123+ FM120-M+ MMBT3906T FM1200-M+ OD-123H FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH

    T8L10

    Abstract: 2SD1024
    Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1024 Case : TO-220 T8L10 Unit : mm 8A NPN RATINGS ●Absolute Maxi mum Rati ngs Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


    Original     		PDF 2SD1024 O-220 T8L10) T8L10 2SD1024

    SOT890-1

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ THRU 2SA1201 FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse


    Original     		PDF OD-123+ 060TYP 118TYP FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH SOT890-1

    2N5192

    Abstract: 2N5191 2N5195
    Text: 2N5191 2N5192  MEDIUM POWER NPN SILICON TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The 2N5191 and 2N5192 are silicon epitaxial-base NPN transistors in Jedec SOT-32


    Original     		PDF 2N5191 2N5192 2N5191 2N5192 OT-32 2N5195. 2N5195

    MMDT4403

    Abstract: transistor c 2026 TRANSISTOR m3a
    Text: MMDT4403 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 200 mWatts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage V CE = -40V • Collector current I C = -600mA • In compliance with EU RoHS 2002/95/EC directives


    Original     		PDF MMDT4403 -600mA 2002/95/EC OT-363, MIL-STD-750, MMDT4403 transistor c 2026 TRANSISTOR m3a

    U2775B-B

    Abstract: U269B-B u269b u4614b-a U6811B-B U2555 u4614 U2390B-F u2775b U2550B1-A
    Text: TELEFUNKEN Semiconductors Quality and Reliability Data TELEFUNKEN Semiconductors Issue: 11.95 TQ02 TQ02 TELEFUNKEN Semiconductors Table of Contents 1. Quality and Reliability Targets . 1


    Original     		PDF U842B-A U6805B-B U8442B-G U6806B-A U847BST-A U6810B-A U8600B-A U6811B-B U860B-B U690B-A U2775B-B U269B-B u269b u4614b-a U6811B-B U2555 u4614 U2390B-F u2775b U2550B1-A

    TN41

    Abstract: TN41A
    Text: TOSHIBA TN41AJN41B TOSHIBA PROGAMMABLE UNI JUNCTION TRANSISTOR TN41A SILICON PLANAR TYPE TNZL1R THYRISTOR-TRIGGER, RELAXATION OSCILLATOR, PULSER AND TIMER Unit in mm APPLICATIONS ¿5.1 M AX. • Low Leakage Current : lG A O ~ l^ n^- Max. I(^Kg = 100nA (Max.)


    OCR Scan     		PDF TN41AJN41B TN41A 100nA TN41B TN41 TN41A

    TN41A

    Abstract: TN-41A
    Text: TN41 A,TN41 B TO SHIBA TOSHIBA PRO GA M M ABLE UNI JUNCTION TRANSISTOR SILICON PLANAR TYPE TN41A, TN41B THYRISTOR-TRIGGER, RELAXATION OSCILLATOR, PULSER AND TIM ER U nit in mm APPLICATIONS {¡5.1 M A X • Low Leakage Current : lQAO = 10nA Max. IGKS = lOOnA (Max.)


    OCR Scan     		PDF TN41A, TN41B TN41A 510kn TN41A TN-41A

    TN41A

    Abstract: ujt timer CIRCUIT transistor tn41a ujt timer PROGRAMMABLE UJT TN-41A TN41 TN41B uni junction transistor
    Text: TN41A,TN41B TOSHIBA TOSHIBA PROGAMMABLE UNI JUNCTION TRANSISTOR SILICON PLANAR TYPE T N 4 1 A , T N 4 1 B THYRISTOR-TRIGGER, RELAXATION OSCILLATOR, PULSER AND TIMER APPLICATIONS • Low Leakage Current : IQAO“ 10nA Max. lG K S~ 1 0 0 n A (Max.) • High Pulse Output Voltage : V q = 10V (Typ.)


    OCR Scan     		PDF TN41AJN41B TN41A, TN41B 100nA TN41A 100//S 10//S TN41A ujt timer CIRCUIT transistor tn41a ujt timer PROGRAMMABLE UJT TN-41A TN41 TN41B uni junction transistor

    3SK28

    Abstract: 38K28 10ID 251C ta1028 transistor BC 307 3SK 49
    Text: 3SK 28 s /U D y N Z - v f tM S t& B m n m m h jy s J z ? ^ IL IC O N N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR I f l x t i INDUSTRIAL APPLICATIONS o Uni t in mm xf+mmmmm 0 5 8 MAX. o Video Pre —Amplifier Applications o VHP Band Amplifier Applications f i s 3 'S * t fi y *


    OCR Scan     		PDF 100MHz 100MHz) 3SK28 VDS-10V, 3SK28 38K28 10ID 251C ta1028 transistor BC 307 3SK 49

    3SK62

    Abstract: transistor KL Transistor VN 40
    Text: 3SK * SILICON N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR O < •*£« o Im pedance C o n v erto r Uni t i n y y * -f 3 i» Ä 3 'J' £ ilffl S 4 « ffi L -r w -Í - t o B A 1}4 y n — f y x - c - t • 2 m = 3 0 0 —2000 u n lAttiU-t y e - f y * r - t :


    OCR Scan     		PDF 110dBm 3SK62 Cg-15pF 3SK62 transistor KL Transistor VN 40

    bf246c

    Abstract: BF247A
    Text: DISC RETE SE M IC O N D U C TO R S InlEET BF246A; BF246B; BF246C; BF247A; BF247B; BF247C N-channel silicon junction field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors


    OCR Scan     		PDF BF246A; BF246B; BF246C; BF247A; BF247B; BF247C bf246c BF247A

    Untitled

    Abstract: No abstract text available
    Text: Philips Semi c on du ct or s Pr od uc t specification P o w e r M O S transistor G E N E R A L DE SCRIPTION BUK462-1 00A QUICK RE FE R E N C E DATA N-channel enhancement mode field-effed power transistor in a plastic envelope suitable for surface mount applications.


    OCR Scan     		PDF BUK462-1

    Unitrode transistors data To5

    Abstract: UC195 on 614 TO3 power transistor UC395 transistor 257 transistor 257 isolated unitrode
    Text: UNITRODE CORP/UNITRODE IN T E G R A T E D y IC “ F Smart Power Transistor UNITRODE FEATURES • Greater Than 1.0A Output • 3-OjuA Typical Base Current • 500ns Switching Time • 2.0V Saturation • Directly Interfaces with CMOS or TTL • Internal Thermal Limiting


    OCR Scan     		PDF 500ns O-257 UC295 UC395 UC195/UC395 0Q12M03 UC195 Unitrode transistors data To5 on 614 TO3 power transistor UC395 transistor 257 transistor 257 isolated unitrode

    003A

    Abstract: t393 ET393R
    Text: SPECIFICATION DEVICE NAME : TYPE NAME : BIPOLAR TRANSISTOR ET 3 9 3 R SPEC. No. DATE Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric Cc^LtcL DWG.NO. DRAWN ! CHECKED T % Y 0257-R-004a Ratings


    OCR Scan     		PDF 0257-R-004a 025T-R-003a 0257-R-003a ET393R 003A t393 ET393R

    003A

    Abstract: t393 ET393R
    Text: SPECIFICATION DEVICE NAME : TYPE NAME : BIPOLAR TRANSISTOR ET 3 9 3 R SPEC. No. DATE Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric Cc^LtcL DWG.NO. DRAWN ! CHECKED T % Y 0257-R-004a Ratings


    OCR Scan     		PDF 0257-R-004a 025T-R-003a 0257-R-003a ET393R 0257-R-003a 003A t393 ET393R

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 119 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R-|=4.7ki2 IO ­ nr T I Pin Configuration BCR 119 WKs 1= B Q62702-C2255 Package o II CO Marking Ordering Code LU II


    OCR Scan     		PDF Q62702-C2255 OT-23

    Untitled

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON TYPE STD8N06 STD8N06 m N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss R DS on Id 60 V < 0.25 a 8 A . TYPICAL R DS(on) = 0.21 Cl • AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C • LOW GATE CHARGE


    OCR Scan     		PDF STD8N06 O-251) O-252) O-251 O-252

    Untitled

    Abstract: No abstract text available
    Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Logic level FET F E A TU R ES PHP21 N06LT, PHB21 N 0 6 L T SY M B O L • ’ T re n c h ’ technology • Very low on-state resistance • Fast sw itching


    OCR Scan     		PDF PHP21 N06LT, PHB21

    Untitled

    Abstract: No abstract text available
    Text: 1989963 C E N T R A L S E M I C O N D U C T O R •=12 à- DE ■ n û ' n b B 92D 00386 aOOOBflt. T -J* 3-/3. 33-J3 4 TIP35, A, B, C TIP36, A, B, C ' ' NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS central Sem iconductor Corp. T0-3P CASE 145 Adams Avenue


    OCR Scan     		PDF 33-J3 TIP35, TIP36, TIP36 TIP35A TIP35 TIP36

    1B16A

    Abstract: B216A MJE13008 MJE13009 MJE-13008
    Text: DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13008, MJE13009 types are Silicon NPN Transistors designed for high voltage, high speed switching appl ications. MAXIMUM RATINGS Tr=25°C Col 1ector- Emitter Voltage (VBE= 1 .5V) Co l1ector- Emi tter Voltage Emitter Base Voltage


    OCR Scan     		PDF MJE13008, MJE13009 MJE13008 500mA, 1B16A B216A MJE-13008

    2N6229

    Abstract: 2N5633 2N5634 2N6230 2N6231 2N5632
    Text: 2N5632 2N6229 Central 2N5633 2N6230 2N5634 2N6231 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS Semiconductor Corp. Central Semiconductor Corp. JEDEC TO-3 CASE 1 4 5 Adam s Avenue Hauppauge, New York 1 1 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5632, 2N6229 series types are complementary silicon power


    OCR Scan     		PDF 2N5632 2N5633 2N5634 2N6229 2N6230 2N6231 2N5632, 2N5633

    buk555-60a

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor BUK555-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF BUK555-60A/B BUK555 T0220Aon-state BUK555-60A/B buk555-60a

    Untitled

    Abstract: No abstract text available
    Text: *57 T YPE irfs IRF N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V dss RDS on Id IRF840 IRF840FI 500 V 500 V < 0.85 £2 < 0.85 a 8 A 4.5 A IRF841 IRF841FI 450 V 450 V < 0.85 ß < 0.85 ß 8 A 4.5 A • . ■ ■ 40 /fi 841/Fl SGS-THOMSON iLiOM)iQ(£I


    OCR Scan     		PDF 841/Fl IRF840 IRF840FI IRF841 IRF841FI